![SCT3105KRC14 SCT3105KRC14](https://www.mouser.com/images/rohmsemiconductor/lrg/TO-247-4_SPL.jpg)
SCT3105KRC14 ROHM Semiconductor
![datasheet?p=SCT3105KR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key](/images/adobe-acrobat.png)
SiC MOSFETs 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1125.8 грн |
25+ | 967.76 грн |
Відгуки про товар
Написати відгук
Технічний опис SCT3105KRC14 ROHM Semiconductor
Description: SICFET N-CH 1200V 24A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V, Power Dissipation (Max): 134W, Vgs(th) (Max) @ Id: 5.6V @ 3.81mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V.
Інші пропозиції SCT3105KRC14 за ціною від 1165.66 грн до 1495.57 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||
---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SCT3105KRC14 | Виробник : Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V Power Dissipation (Max): 134W Vgs(th) (Max) @ Id: 5.6V @ 3.81mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
|
||||||
SCT3105KRC14 | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W Mounting: THT Kind of package: tube Power dissipation: 134W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 51nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 60A Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 24A On-state resistance: 137mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
||||||||
SCT3105KRC14 | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W Mounting: THT Kind of package: tube Power dissipation: 134W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 51nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 60A Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 24A On-state resistance: 137mΩ Type of transistor: N-MOSFET |
товар відсутній |