Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (100320) > Сторінка 1647 з 1672
| Фото | Назва | Виробник | Інформація |
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| DTC124EETL | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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DTC124EKAT146 | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
на замовлення 1705 шт: термін постачання 21-30 дні (днів) |
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| DTC124EMT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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DTC124EU3HZGT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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DTC124EU3T106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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DTC124EUAFRAT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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| DTC124EUBTL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323F Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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| DTC124TMT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ |
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DTC124TUAT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ |
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DTC124XCAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
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DTC124XCAT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
на замовлення 974 шт: термін постачання 21-30 дні (днів) |
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| DTC124XEFRATL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
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2SC4061KT146N | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Case: SC59; SOT346 Power dissipation: 0.2W Kind of package: reel; tape Collector-emitter voltage: 300V Current gain: 56...120 Collector current: 0.1A Type of transistor: NPN Polarisation: bipolar Frequency: 100MHz |
на замовлення 2955 шт: термін постачання 21-30 дні (днів) |
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DTA124XCAHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
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DTA124XCAT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 0.2W Polarisation: bipolar Frequency: 250MHz Kind of package: reel; tape Case: SOT23 Kind of transistor: BRT Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 68 Collector current: 0.1A Type of transistor: PNP |
на замовлення 950 шт: термін постачання 21-30 дні (днів) |
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| DTA124XEFRATL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 0.15W Polarisation: bipolar Frequency: 250MHz Kind of package: reel; tape Case: SC75A; SOT416 Kind of transistor: BRT Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 68 Collector current: 0.1A Type of transistor: PNP |
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DTA124XKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 0.2W Polarisation: bipolar Frequency: 250MHz Kind of package: reel; tape Case: SC59; SOT346 Kind of transistor: BRT Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 68 Collector current: 0.1A Type of transistor: PNP |
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| DTA124XMT2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 0.15W Polarisation: bipolar Frequency: 250MHz Kind of package: reel; tape Case: SOT723 Kind of transistor: BRT Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 68 Collector current: 0.1A Type of transistor: PNP |
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| RHU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: UMT3 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced |
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| RD3G01BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -30A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -15A On-state resistance: 49mΩ Type of transistor: P-MOSFET |
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| RD3G03BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -35A On-state resistance: 24mΩ Type of transistor: P-MOSFET |
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| RD3G07BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W Power dissipation: 101W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -140A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -70A On-state resistance: 8.7mΩ Type of transistor: P-MOSFET |
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| RD3L01BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W Power dissipation: 26W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -10A On-state resistance: 93mΩ Type of transistor: P-MOSFET |
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| RD3L03BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -35A On-state resistance: 46mΩ Type of transistor: P-MOSFET |
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| RD3L07BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W Power dissipation: 101W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -140A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -70A On-state resistance: 14.1mΩ Type of transistor: P-MOSFET |
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| RJ1G12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.08mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhanced |
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| RJ1L12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 192W Polarisation: unipolar Gate charge: 175nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 60V Drain current: 120A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET |
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| RJ1P12BBDTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced |
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| EM6J1T2R | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: 0.2A Pulsed drain current: -0.8A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±10V On-state resistance: 9.6Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| QS6J11TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±10V On-state resistance: 400mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| QS6J1TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 430mΩ Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| UM6J1NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.2A Pulsed drain current: -400mA Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| US6J11TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -1.3A; Idm: -5.2A; 1W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -1.3A Pulsed drain current: -5.2A Power dissipation: 1W Case: TUMT6 Gate-source voltage: ±10V On-state resistance: 1.06Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| RCJ120N20TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: 200V Drain current: 12A On-state resistance: 0.79Ω Type of transistor: N-MOSFET Power dissipation: 52W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 48A |
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| RCJ160N20TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 16A Pulsed drain current: 64A Power dissipation: 85W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
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| RSJ151P10TL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Pulsed drain current: -30A Power dissipation: 50W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced |
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KDZVTR4.7B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 4.7V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 20µA |
на замовлення 4347 шт: термін постачання 21-30 дні (днів) |
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| RF2001NS2DFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 20A Reverse recovery time: 30ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.93V Max. forward impulse current: 100A Kind of package: reel; tape |
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| RF2001NS2DTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 20A Reverse recovery time: 30ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.93V Max. forward impulse current: 100A Kind of package: reel; tape |
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| RF2001NS3DFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 350V Load current: 20A Reverse recovery time: 25ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 1.3V Max. forward impulse current: 100A Kind of package: reel; tape |
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| RF2001NS3DTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 350V Load current: 20A Reverse recovery time: 25ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 1.3V Max. forward impulse current: 100A Kind of package: reel; tape |
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| RCJ510N25TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Pulsed drain current: 160A Drain-source voltage: 250V Drain current: 51A On-state resistance: 155mΩ Type of transistor: N-MOSFET Power dissipation: 304W Polarisation: unipolar Gate charge: 0.12µC Kind of channel: enhanced Gate-source voltage: ±30V |
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MMBZ16VALFHT116 | ROHM SEMICONDUCTOR |
Category: Transil diodes - arrays Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23 Case: SOT23 Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Type of diode: TVS array Peak pulse power dissipation: 40W Max. off-state voltage: 13V Semiconductor structure: common anode; double Max. forward impulse current: 1.7A Breakdown voltage: 16V |
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1SS356VMTE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 35V; 0.1A; SC90A,SOD323F; Ufmax: 1V Mounting: SMD Case: SC90A; SOD323F Max. off-state voltage: 35V Max. forward voltage: 1V Load current: 0.1A Semiconductor structure: single diode Kind of package: reel; tape Type of diode: switching |
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1SS400CMT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD923 Max. forward voltage: 1.2V Max. load current: 225mA Max. forward impulse current: 0.5A Kind of package: reel; tape |
на замовлення 3200 шт: термін постачання 21-30 дні (днів) |
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| 1SS400CSFHT2RA | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A Mounting: SMD Max. forward impulse current: 0.5A Kind of package: reel; tape Type of diode: switching Case: SOD923 Max. off-state voltage: 90V Max. load current: 225mA Max. forward voltage: 1.2V Load current: 0.1A Semiconductor structure: single diode Reverse recovery time: 4ns |
товар відсутній |
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1SS400SMFHT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SC79; SOD523 Max. forward voltage: 1.2V Max. load current: 225mA Max. forward impulse current: 0.5A Kind of package: reel; tape |
на замовлення 5100 шт: термін постачання 21-30 дні (днів) |
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1SS400SMT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 3pF Case: SC79; SOD523 Max. forward voltage: 1.2V Max. forward impulse current: 0.5A Leakage current: 0.1µA Kind of package: reel; tape |
на замовлення 7780 шт: термін постачання 21-30 дні (днів) |
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2SA1037AKT146Q | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Mounting: SMD Case: SC59; SOT346 Kind of package: reel; tape Type of transistor: PNP Frequency: 140MHz Polarisation: bipolar Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 120...270 Collector current: 0.15A |
на замовлення 2880 шт: термін постачання 21-30 дні (днів) |
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2SA1037AKT146R | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Mounting: SMD Case: SC59; SOT346 Kind of package: reel; tape Type of transistor: PNP Frequency: 140MHz Polarisation: bipolar Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 180...390 Collector current: 0.15A |
на замовлення 2960 шт: термін постачання 21-30 дні (днів) |
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2SC2412KT146Q | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
на замовлення 2320 шт: термін постачання 21-30 дні (днів) |
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2SC2412KT146R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товар відсутній |
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2SC2412KT146S | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 270...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
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UMZ1NTR | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 150mW Case: SC88; SOT363 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz; 180MHz |
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| RJU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Mounting: SMD On-state resistance: 3.1Ω Type of transistor: N-MOSFET Case: UMT3 Power dissipation: 0.2W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 0.8A Drain-source voltage: 60V Drain current: 0.2A |
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KDZLVTFTR100 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA Mounting: SMD Case: SOD123F Kind of package: reel; tape Zener voltage: 100V Semiconductor structure: single diode Type of diode: Zener Power dissipation: 1W Leakage current: 5µA |
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| RCX450N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 45A Pulsed drain current: 180A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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SML-010MTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 1208; green; 5.6÷25mcd; 3x2x1.3mm; 2.2÷2.8V; 20mA; 70mW Dimensions: 3x2x1.3mm Mounting: SMD LED current: 20mA Front: flat Case: 1208 Power: 70mW Operating voltage: 2.2...2.8V LED colour: green Type of diode: LED Wavelength: 570nm LED lens: transparent Luminosity: 5.6...25mcd |
на замовлення 160 шт: термін постачання 21-30 дні (днів) |
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SML-010YTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 1208; yellow; 2.2÷6.3mcd; 3x2x1.3mm; 2.1÷2.8V; 20mA; 70mW Power: 70mW Case: 1208 Mounting: SMD LED colour: yellow Type of diode: LED Wavelength: 585nm LED lens: transparent Luminosity: 2.2...6.3mcd LED current: 20mA Dimensions: 3x2x1.3mm Front: flat Operating voltage: 2.1...2.8V |
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| RSM002N06T2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.15W Case: VMT3 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
| DTC124EETL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| DTC124EKAT146 | |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 1705 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 2.97 грн |
| 155+ | 2.49 грн |
| 415+ | 2.13 грн |
| 1140+ | 2.01 грн |
| DTC124EMT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| DTC124EU3HZGT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| DTC124EU3T106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| DTC124EUAFRAT106 |
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| DTC124EUBTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323F
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323F
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| DTC124TMT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
товар відсутній
| DTC124TUAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
товар відсутній
| DTC124XCAHZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| DTC124XCAT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
на замовлення 974 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.15 грн |
| 500+ | 1.9 грн |
| 550+ | 1.65 грн |
| DTC124XEFRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| 2SC4061KT146N |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Case: SC59; SOT346
Power dissipation: 0.2W
Kind of package: reel; tape
Collector-emitter voltage: 300V
Current gain: 56...120
Collector current: 0.1A
Type of transistor: NPN
Polarisation: bipolar
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Case: SC59; SOT346
Power dissipation: 0.2W
Kind of package: reel; tape
Collector-emitter voltage: 300V
Current gain: 56...120
Collector current: 0.1A
Type of transistor: NPN
Polarisation: bipolar
Frequency: 100MHz
на замовлення 2955 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 27.44 грн |
| 100+ | 12.66 грн |
| 125+ | 7.04 грн |
| 342+ | 6.66 грн |
| DTA124XCAHZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| DTA124XCAT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Polarisation: bipolar
Frequency: 250MHz
Kind of package: reel; tape
Case: SOT23
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Polarisation: bipolar
Frequency: 250MHz
Kind of package: reel; tape
Case: SOT23
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Type of transistor: PNP
на замовлення 950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.15 грн |
| 500+ | 1.9 грн |
| 525+ | 1.69 грн |
| DTA124XEFRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Frequency: 250MHz
Kind of package: reel; tape
Case: SC75A; SOT416
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Frequency: 250MHz
Kind of package: reel; tape
Case: SC75A; SOT416
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Type of transistor: PNP
товар відсутній
| DTA124XKAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Polarisation: bipolar
Frequency: 250MHz
Kind of package: reel; tape
Case: SC59; SOT346
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Polarisation: bipolar
Frequency: 250MHz
Kind of package: reel; tape
Case: SC59; SOT346
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Type of transistor: PNP
товар відсутній
| DTA124XMT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Frequency: 250MHz
Kind of package: reel; tape
Case: SOT723
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Frequency: 250MHz
Kind of package: reel; tape
Case: SOT723
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Type of transistor: PNP
товар відсутній
| RHU002N06FRAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: UMT3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: UMT3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RD3G01BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -15A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -15A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
товар відсутній
| RD3G03BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 24mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 24mΩ
Type of transistor: P-MOSFET
товар відсутній
| RD3G07BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -70A
On-state resistance: 8.7mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -70A
On-state resistance: 8.7mΩ
Type of transistor: P-MOSFET
товар відсутній
| RD3L01BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W
Power dissipation: 26W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -10A
On-state resistance: 93mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W
Power dissipation: 26W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -10A
On-state resistance: 93mΩ
Type of transistor: P-MOSFET
товар відсутній
| RD3L03BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -35A
On-state resistance: 46mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -35A
On-state resistance: 46mΩ
Type of transistor: P-MOSFET
товар відсутній
| RD3L07BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -70A
On-state resistance: 14.1mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -70A
On-state resistance: 14.1mΩ
Type of transistor: P-MOSFET
товар відсутній
| RJ1G12BGNTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.08mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.08mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RJ1L12BGNTLL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 192W
Polarisation: unipolar
Gate charge: 175nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 192W
Polarisation: unipolar
Gate charge: 175nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
товар відсутній
| RJ1P12BBDTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| EM6J1T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 0.2A
Pulsed drain current: -0.8A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 9.6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 0.2A
Pulsed drain current: -0.8A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 9.6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QS6J11TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 400mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 400mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QS6J1TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 430mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 430mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| UM6J1NTN |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.2A
Pulsed drain current: -400mA
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.2A
Pulsed drain current: -400mA
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| US6J11TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -1.3A; Idm: -5.2A; 1W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -1.3A
Pulsed drain current: -5.2A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±10V
On-state resistance: 1.06Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -1.3A; Idm: -5.2A; 1W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -1.3A
Pulsed drain current: -5.2A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±10V
On-state resistance: 1.06Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| RCJ120N20TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 12A
On-state resistance: 0.79Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 12A
On-state resistance: 0.79Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
товар відсутній
| RCJ160N20TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSJ151P10TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Pulsed drain current: -30A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Pulsed drain current: -30A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| KDZVTR4.7B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
на замовлення 4347 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 25.02 грн |
| 26+ | 14.61 грн |
| 100+ | 9.67 грн |
| 130+ | 6.74 грн |
| 357+ | 6.37 грн |
| 3000+ | 6.22 грн |
| RF2001NS2DFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.93V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.93V
Max. forward impulse current: 100A
Kind of package: reel; tape
товар відсутній
| RF2001NS2DTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.93V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.93V
Max. forward impulse current: 100A
Kind of package: reel; tape
товар відсутній
| RF2001NS3DFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
товар відсутній
| RF2001NS3DTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
товар відсутній
| RCJ510N25TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Pulsed drain current: 160A
Drain-source voltage: 250V
Drain current: 51A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Power dissipation: 304W
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Pulsed drain current: 160A
Drain-source voltage: 250V
Drain current: 51A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Power dissipation: 304W
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±30V
товар відсутній
| MMBZ16VALFHT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Transil diodes - arrays
Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23
Case: SOT23
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Type of diode: TVS array
Peak pulse power dissipation: 40W
Max. off-state voltage: 13V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.7A
Breakdown voltage: 16V
Category: Transil diodes - arrays
Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23
Case: SOT23
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Type of diode: TVS array
Peak pulse power dissipation: 40W
Max. off-state voltage: 13V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.7A
Breakdown voltage: 16V
товар відсутній
| 1SS356VMTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC90A,SOD323F; Ufmax: 1V
Mounting: SMD
Case: SC90A; SOD323F
Max. off-state voltage: 35V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC90A,SOD323F; Ufmax: 1V
Mounting: SMD
Case: SC90A; SOD323F
Max. off-state voltage: 35V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: switching
товар відсутній
| 1SS400CMT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 1.2V
Max. load current: 225mA
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 1.2V
Max. load current: 225mA
Max. forward impulse current: 0.5A
Kind of package: reel; tape
на замовлення 3200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 16.14 грн |
| 38+ | 10.12 грн |
| 100+ | 4.63 грн |
| 390+ | 2.25 грн |
| 1072+ | 2.13 грн |
| 2500+ | 2.12 грн |
| 1SS400CSFHT2RA |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Mounting: SMD
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Type of diode: switching
Case: SOD923
Max. off-state voltage: 90V
Max. load current: 225mA
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Mounting: SMD
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Type of diode: switching
Case: SOD923
Max. off-state voltage: 90V
Max. load current: 225mA
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 4ns
товар відсутній
| 1SS400SMFHT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 1.2V
Max. load current: 225mA
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 1.2V
Max. load current: 225mA
Max. forward impulse current: 0.5A
Kind of package: reel; tape
на замовлення 5100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 9.68 грн |
| 54+ | 7.04 грн |
| 79+ | 4.8 грн |
| 100+ | 4.05 грн |
| 377+ | 2.33 грн |
| 500+ | 2.32 грн |
| 1036+ | 2.2 грн |
| 1SS400SMT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 3pF
Case: SC79; SOD523
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Leakage current: 0.1µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 3pF
Case: SC79; SOD523
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Leakage current: 0.1µA
Kind of package: reel; tape
на замовлення 7780 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 9.68 грн |
| 58+ | 6.52 грн |
| 68+ | 5.58 грн |
| 85+ | 4.44 грн |
| 101+ | 3.72 грн |
| 250+ | 2.95 грн |
| 410+ | 2.14 грн |
| 1000+ | 2.13 грн |
| 1128+ | 2.02 грн |
| 2SA1037AKT146Q |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Mounting: SMD
Case: SC59; SOT346
Kind of package: reel; tape
Type of transistor: PNP
Frequency: 140MHz
Polarisation: bipolar
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 120...270
Collector current: 0.15A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Mounting: SMD
Case: SC59; SOT346
Kind of package: reel; tape
Type of transistor: PNP
Frequency: 140MHz
Polarisation: bipolar
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 120...270
Collector current: 0.15A
на замовлення 2880 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 19.37 грн |
| 32+ | 11.84 грн |
| 100+ | 5.1 грн |
| 150+ | 4.43 грн |
| 381+ | 2.3 грн |
| 1046+ | 2.18 грн |
| 2SA1037AKT146R |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Mounting: SMD
Case: SC59; SOT346
Kind of package: reel; tape
Type of transistor: PNP
Frequency: 140MHz
Polarisation: bipolar
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 180...390
Collector current: 0.15A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Mounting: SMD
Case: SC59; SOT346
Kind of package: reel; tape
Type of transistor: PNP
Frequency: 140MHz
Polarisation: bipolar
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 180...390
Collector current: 0.15A
на замовлення 2960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 19.37 грн |
| 32+ | 11.84 грн |
| 100+ | 5.38 грн |
| 386+ | 2.27 грн |
| 1061+ | 2.15 грн |
| 2SC2412KT146Q |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
на замовлення 2320 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 16.14 грн |
| 44+ | 8.54 грн |
| 100+ | 4.77 грн |
| 361+ | 2.43 грн |
| 991+ | 2.3 грн |
| 2SC2412KT146R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
товар відсутній
| 2SC2412KT146S |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
товар відсутній
| UMZ1NTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 150mW
Case: SC88; SOT363
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz; 180MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 150mW
Case: SC88; SOT363
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz; 180MHz
товар відсутній
| RJU002N06FRAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
On-state resistance: 3.1Ω
Type of transistor: N-MOSFET
Case: UMT3
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Drain-source voltage: 60V
Drain current: 0.2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
On-state resistance: 3.1Ω
Type of transistor: N-MOSFET
Case: UMT3
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Drain-source voltage: 60V
Drain current: 0.2A
товар відсутній
| KDZLVTFTR100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Zener voltage: 100V
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 1W
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Zener voltage: 100V
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 1W
Leakage current: 5µA
товар відсутній
| RCX450N20 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SML-010MTT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 1208; green; 5.6÷25mcd; 3x2x1.3mm; 2.2÷2.8V; 20mA; 70mW
Dimensions: 3x2x1.3mm
Mounting: SMD
LED current: 20mA
Front: flat
Case: 1208
Power: 70mW
Operating voltage: 2.2...2.8V
LED colour: green
Type of diode: LED
Wavelength: 570nm
LED lens: transparent
Luminosity: 5.6...25mcd
Category: SMD colour LEDs
Description: LED; SMD; 1208; green; 5.6÷25mcd; 3x2x1.3mm; 2.2÷2.8V; 20mA; 70mW
Dimensions: 3x2x1.3mm
Mounting: SMD
LED current: 20mA
Front: flat
Case: 1208
Power: 70mW
Operating voltage: 2.2...2.8V
LED colour: green
Type of diode: LED
Wavelength: 570nm
LED lens: transparent
Luminosity: 5.6...25mcd
на замовлення 160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 33.89 грн |
| 19+ | 19.93 грн |
| 50+ | 14.46 грн |
| 100+ | 12.74 грн |
| 111+ | 7.94 грн |
| SML-010YTT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 1208; yellow; 2.2÷6.3mcd; 3x2x1.3mm; 2.1÷2.8V; 20mA; 70mW
Power: 70mW
Case: 1208
Mounting: SMD
LED colour: yellow
Type of diode: LED
Wavelength: 585nm
LED lens: transparent
Luminosity: 2.2...6.3mcd
LED current: 20mA
Dimensions: 3x2x1.3mm
Front: flat
Operating voltage: 2.1...2.8V
Category: SMD colour LEDs
Description: LED; SMD; 1208; yellow; 2.2÷6.3mcd; 3x2x1.3mm; 2.1÷2.8V; 20mA; 70mW
Power: 70mW
Case: 1208
Mounting: SMD
LED colour: yellow
Type of diode: LED
Wavelength: 585nm
LED lens: transparent
Luminosity: 2.2...6.3mcd
LED current: 20mA
Dimensions: 3x2x1.3mm
Front: flat
Operating voltage: 2.1...2.8V
товар відсутній
| RSM002N06T2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: VMT3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: VMT3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
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