Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99378) > Сторінка 1649 з 1657
| Фото | Назва | Виробник | Інформація |
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SCS220AEC | ROHM SEMICONDUCTOR |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 130W; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Max. load current: 81A Power dissipation: 130W Semiconductor structure: single diode Case: TO247-3 Kind of package: tube Max. forward impulse current: 260A Max. forward voltage: 1.55V |
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| SCS220AJHRTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; TO263AB; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 20A Max. load current: 71A Power dissipation: 100W Semiconductor structure: single diode Case: TO263AB Kind of package: reel; tape Max. forward impulse current: 260A Max. forward voltage: 1.63V Leakage current: 0.4mA |
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| SCS220AJTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; TO263AB; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 20A Max. load current: 71A Power dissipation: 100W Semiconductor structure: single diode Case: TO263AB Kind of package: reel; tape Max. forward impulse current: 260A Max. forward voltage: 1.63V Leakage current: 0.4mA |
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SCS220AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 40W; TO220FP-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Max. load current: 41A Power dissipation: 40W Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 260A Max. forward voltage: 1.55V |
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| RV2C010UNT2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3 Mounting: SMD Kind of package: reel; tape Case: DFN1006-3 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 2A Polarisation: unipolar Power dissipation: 0.4W Type of transistor: N-MOSFET On-state resistance: 1.05Ω Drain current: 1A Drain-source voltage: 20V |
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DTB113ECT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Mounting: SMD Case: SOT23 Polarisation: bipolar Power dissipation: 0.2W Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 1kΩ Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 33 Collector current: 0.5A Type of transistor: PNP |
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DTB113EKT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ Mounting: SMD Case: SC59; SOT346 Polarisation: bipolar Power dissipation: 0.2W Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 1kΩ Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 33 Collector current: 0.5A Type of transistor: PNP |
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DTB113ZCT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Mounting: SMD Case: SOT23 Polarisation: bipolar Power dissipation: 0.2W Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 10kΩ Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 56 Collector current: 0.5A Type of transistor: PNP |
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DTB113ZKT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ Mounting: SMD Case: SC59; SOT346 Polarisation: bipolar Power dissipation: 0.2W Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 10kΩ Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 56 Collector current: 0.5A Type of transistor: PNP |
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DTB114ECT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ Mounting: SMD Case: SOT23 Polarisation: bipolar Power dissipation: 0.2W Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 56 Collector current: 0.5A Type of transistor: PNP |
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DTB114EKT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
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DTB114GKT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; 10kΩ Mounting: SMD Case: SC59; SOT346 Polarisation: bipolar Power dissipation: 0.2W Kind of package: reel; tape Kind of transistor: BRT Base-emitter resistor: 10kΩ Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 56 Collector current: 0.5A Type of transistor: PNP |
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| RCX511N25 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 204A; 84W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 51A Pulsed drain current: 204A Power dissipation: 84W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 155mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
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| RD3H160SPFRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -16A; Idm: -32A; 20W Mounting: SMD Kind of package: reel; tape Power dissipation: 20W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -32A Case: DPAK; TO252 Drain-source voltage: -45V Drain current: -16A On-state resistance: 70mΩ Type of transistor: P-MOSFET |
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| RTQ025P02FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.5A Pulsed drain current: -10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 6.4nC Kind of package: reel; tape Kind of channel: enhanced |
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FMA2AT148 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; R1: 47kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT25 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
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| RFN5BM2STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.98V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 40A Max. forward voltage: 0.98V |
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| CDZVT2R8.2B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 100mW; 8.2V; SMD; reel,tape; SOD923; single diode Mounting: SMD Case: SOD923 Tolerance: ±2% Kind of package: reel; tape Power dissipation: 0.1W Type of diode: Zener Semiconductor structure: single diode Zener voltage: 8.2V Leakage current: 0.5µA |
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| 2SAR512RTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 2A; 500mW; SC96 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 2A Power dissipation: 0.5W Case: SC96 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 430MHz |
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2SAR513PFRAT100 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 1A; 500mW/2W; SC62,SOT89 Mounting: SMD Kind of package: reel; tape Case: SC62; SOT89 Frequency: 400MHz Collector-emitter voltage: 50V Current gain: 180...450 Collector current: 1A Type of transistor: PNP Power dissipation: 500mW/2W Polarisation: bipolar |
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| RD3L080SNFRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 16A; 15W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 16A Power dissipation: 15W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 109mΩ Mounting: SMD Gate charge: 9.4nC Kind of package: reel; tape Kind of channel: enhanced |
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| RSX051VAM30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape Case: SOD323HE Max. off-state voltage: 30V Max. forward voltage: 0.39V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5A Leakage current: 0.2mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
на замовлення 2960 шт: термін постачання 21-30 дні (днів) |
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| RSX051VYM30FHTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape Case: SOD323HE Max. off-state voltage: 30V Max. forward voltage: 0.39V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5A Leakage current: 0.2mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
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| RQ5C060BCTCL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -18A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±8V On-state resistance: 51mΩ Mounting: SMD Gate charge: 19.2nC Kind of package: reel; tape Kind of channel: enhanced |
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FMG4AT148 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; 10kΩ Mounting: SMD Type of transistor: NPN x2 Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Case: SOT25 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 100...600 Collector current: 0.1A |
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SCS205KGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 88W; TO220AC; tube Mounting: THT Case: TO220AC Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 27A Max. forward voltage: 1.6V Load current: 5A Semiconductor structure: single diode Max. forward impulse current: 80A Power dissipation: 88W |
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| SCS206AJHRTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263AB; reel,tape Mounting: SMD Case: TO263AB Kind of package: reel; tape Technology: SiC Power dissipation: 48W Max. forward impulse current: 90A Leakage current: 120µA Type of diode: Schottky rectifying Max. off-state voltage: 650V Max. load current: 26A Max. forward voltage: 1.63V Load current: 6A Semiconductor structure: single diode |
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SCS206AJTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263AB; reel,tape Mounting: SMD Case: TO263AB Kind of package: reel; tape Technology: SiC Power dissipation: 48W Max. forward impulse current: 90A Type of diode: Schottky rectifying Max. off-state voltage: 650V Max. load current: 26A Max. forward voltage: 1.55V Load current: 6A Semiconductor structure: single diode |
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SCS206AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; 31W; tube Mounting: THT Case: TO220FP-2 Kind of package: tube Technology: SiC Power dissipation: 31W Max. forward impulse current: 90A Type of diode: Schottky rectifying Max. off-state voltage: 650V Max. load current: 21A Max. forward voltage: 1.55V Load current: 6A Semiconductor structure: single diode |
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| SCS210AJHRTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263AB; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 45A Power dissipation: 83W Semiconductor structure: single diode Case: TO263AB Kind of package: reel; tape Max. forward impulse current: 150A Max. forward voltage: 1.63V Leakage current: 0.2mA |
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SCS210AJTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263AB; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 45A Power dissipation: 83W Semiconductor structure: single diode Case: TO263AB Kind of package: reel; tape Max. forward impulse current: 150A Max. forward voltage: 1.55V |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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SCS210AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 34W; TO220FP-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Max. load current: 28A Power dissipation: 34W Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 1.55V |
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| SCS212AJTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; TO263AB; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Max. load current: 51A Power dissipation: 88W Semiconductor structure: single diode Case: TO263AB Kind of package: reel; tape Max. forward impulse current: 170A Max. forward voltage: 1.63V Leakage current: 240µA |
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SCS212AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 37W; TO220FP-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Max. load current: 32A Power dissipation: 37W Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 170A Max. forward voltage: 1.55V |
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SCS230KE2C | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 360W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Max. load current: 130A Power dissipation: 360W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 0.48kA Max. forward voltage: 1.6V |
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| 2SAR523MT2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.1A; 150mW; SOT723 Mounting: SMD Case: SOT723 Kind of package: reel; tape Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Collector-emitter voltage: 50V Current gain: 120...560 Frequency: 300MHz |
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| 2SAR523UBTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.1A; 200mW; SOT323F Mounting: SMD Case: SOT323F Kind of package: reel; tape Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Collector-emitter voltage: 50V Current gain: 120...560 Frequency: 300MHz |
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RB070MM-30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1.5A; SOD123F; reel,tape Mounting: SMD Max. off-state voltage: 30V Max. forward voltage: 0.49V Load current: 1.5A Semiconductor structure: single diode Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape Type of diode: Schottky rectifying Case: SOD123F |
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| RSQ035N03FRATR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhanced |
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| RSQ035N06HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 87mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| RSQ035P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhanced |
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| RTQ035P02FHATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -14A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| RVQ040N05TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 4A; Idm: 16A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 4A Pulsed drain current: 16A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±21V On-state resistance: 74mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced |
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| EMH4FHAT2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ |
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| EMH9FHAT2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
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| EMB11FHAT2R | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
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UMB4NFHATN | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ |
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UMH9NFHATN | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
на замовлення 1770 шт: термін постачання 21-30 дні (днів) |
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| EMD9FHAT2R | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
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UMD9NFHATR | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
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RB578VAM100TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 0.7A; SOD323HE; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 0.7A Semiconductor structure: single diode Max. forward voltage: 0.85V Case: SOD323HE Kind of package: reel; tape Leakage current: 0.2µA Max. forward impulse current: 5A |
на замовлення 1070 шт: термін постачання 21-30 дні (днів) |
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| RD3L150SNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 30A; 20W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 30A Power dissipation: 20W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
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| RQ3L090GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 36A Power dissipation: 20W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 21.4mΩ Mounting: SMD Gate charge: 24.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| R6042JNZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 42A; Idm: 126A; 495W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 42A Pulsed drain current: 126A Power dissipation: 495W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.104Ω Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced |
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SML-P12YTT86R | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 0402; yellow; 40÷100mcd; 1x0.6x0.2mm; 2.1V; 20mA; 52mW Mounting: SMD Case: 0402 Operating voltage: 2.1V Dimensions: 1x0.6x0.2mm Wavelength: 587...593nm LED lens: transparent Luminosity: 40...100mcd LED current: 20mA Front: flat Power: 52mW LED colour: yellow Type of diode: LED |
на замовлення 1290 шт: термін постачання 21-30 дні (днів) |
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| RGTH40TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 80A Turn-on time: 47ns Turn-off time: 141ns Type of transistor: IGBT Power dissipation: 72W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 20A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 40nC |
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| RGTH40TS65GC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 80A Turn-on time: 47ns Turn-off time: 141ns Type of transistor: IGBT Power dissipation: 72W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 20A Gate charge: 40nC |
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| RGW80TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 107W; TO247-3 Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 160A Turn-on time: 59ns Turn-off time: 228ns Type of transistor: IGBT Power dissipation: 107W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 110nC Mounting: THT |
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2SC4097T106Q | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.5A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
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2SC4097T106R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.5A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товар відсутній |
| SCS220AEC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 130W; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 81A
Power dissipation: 130W
Semiconductor structure: single diode
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 260A
Max. forward voltage: 1.55V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 130W; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 81A
Power dissipation: 130W
Semiconductor structure: single diode
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 260A
Max. forward voltage: 1.55V
товар відсутній
| SCS220AJHRTLL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; TO263AB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 71A
Power dissipation: 100W
Semiconductor structure: single diode
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 260A
Max. forward voltage: 1.63V
Leakage current: 0.4mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; TO263AB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 71A
Power dissipation: 100W
Semiconductor structure: single diode
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 260A
Max. forward voltage: 1.63V
Leakage current: 0.4mA
товар відсутній
| SCS220AJTLL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; TO263AB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 71A
Power dissipation: 100W
Semiconductor structure: single diode
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 260A
Max. forward voltage: 1.63V
Leakage current: 0.4mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; TO263AB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 71A
Power dissipation: 100W
Semiconductor structure: single diode
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 260A
Max. forward voltage: 1.63V
Leakage current: 0.4mA
товар відсутній
| SCS220AMC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 40W; TO220FP-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 41A
Power dissipation: 40W
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 260A
Max. forward voltage: 1.55V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 40W; TO220FP-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 41A
Power dissipation: 40W
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 260A
Max. forward voltage: 1.55V
товар відсутній
| RV2C010UNT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Case: DFN1006-3
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 2A
Polarisation: unipolar
Power dissipation: 0.4W
Type of transistor: N-MOSFET
On-state resistance: 1.05Ω
Drain current: 1A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Case: DFN1006-3
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 2A
Polarisation: unipolar
Power dissipation: 0.4W
Type of transistor: N-MOSFET
On-state resistance: 1.05Ω
Drain current: 1A
Drain-source voltage: 20V
товар відсутній
| DTB113ECT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Mounting: SMD
Case: SOT23
Polarisation: bipolar
Power dissipation: 0.2W
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.5A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Mounting: SMD
Case: SOT23
Polarisation: bipolar
Power dissipation: 0.2W
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.5A
Type of transistor: PNP
товар відсутній
| DTB113EKT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Mounting: SMD
Case: SC59; SOT346
Polarisation: bipolar
Power dissipation: 0.2W
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.5A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Mounting: SMD
Case: SC59; SOT346
Polarisation: bipolar
Power dissipation: 0.2W
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.5A
Type of transistor: PNP
товар відсутній
| DTB113ZCT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Mounting: SMD
Case: SOT23
Polarisation: bipolar
Power dissipation: 0.2W
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 56
Collector current: 0.5A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Mounting: SMD
Case: SOT23
Polarisation: bipolar
Power dissipation: 0.2W
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 56
Collector current: 0.5A
Type of transistor: PNP
товар відсутній
| DTB113ZKT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Mounting: SMD
Case: SC59; SOT346
Polarisation: bipolar
Power dissipation: 0.2W
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 56
Collector current: 0.5A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Mounting: SMD
Case: SC59; SOT346
Polarisation: bipolar
Power dissipation: 0.2W
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 56
Collector current: 0.5A
Type of transistor: PNP
товар відсутній
| DTB114ECT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Mounting: SMD
Case: SOT23
Polarisation: bipolar
Power dissipation: 0.2W
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 56
Collector current: 0.5A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Mounting: SMD
Case: SOT23
Polarisation: bipolar
Power dissipation: 0.2W
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 56
Collector current: 0.5A
Type of transistor: PNP
товар відсутній
| DTB114EKT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| DTB114GKT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; 10kΩ
Mounting: SMD
Case: SC59; SOT346
Polarisation: bipolar
Power dissipation: 0.2W
Kind of package: reel; tape
Kind of transistor: BRT
Base-emitter resistor: 10kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 56
Collector current: 0.5A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; 10kΩ
Mounting: SMD
Case: SC59; SOT346
Polarisation: bipolar
Power dissipation: 0.2W
Kind of package: reel; tape
Kind of transistor: BRT
Base-emitter resistor: 10kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 56
Collector current: 0.5A
Type of transistor: PNP
товар відсутній
| RCX511N25 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 204A; 84W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 51A
Pulsed drain current: 204A
Power dissipation: 84W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 204A; 84W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 51A
Pulsed drain current: 204A
Power dissipation: 84W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| RD3H160SPFRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -16A; Idm: -32A; 20W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 20W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -32A
Case: DPAK; TO252
Drain-source voltage: -45V
Drain current: -16A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -16A; Idm: -32A; 20W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 20W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -32A
Case: DPAK; TO252
Drain-source voltage: -45V
Drain current: -16A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
товар відсутній
| RTQ025P02FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FMA2AT148 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; R1: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT25
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; R1: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT25
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| RFN5BM2STL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.98V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.98V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.98V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.98V
товар відсутній
| CDZVT2R8.2B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 8.2V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 8.2V
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 8.2V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 8.2V
Leakage current: 0.5µA
товар відсутній
| 2SAR512RTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 500mW; SC96
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 0.5W
Case: SC96
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 430MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 500mW; SC96
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 0.5W
Case: SC96
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 430MHz
товар відсутній
| 2SAR513PFRAT100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 1A; 500mW/2W; SC62,SOT89
Mounting: SMD
Kind of package: reel; tape
Case: SC62; SOT89
Frequency: 400MHz
Collector-emitter voltage: 50V
Current gain: 180...450
Collector current: 1A
Type of transistor: PNP
Power dissipation: 500mW/2W
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 1A; 500mW/2W; SC62,SOT89
Mounting: SMD
Kind of package: reel; tape
Case: SC62; SOT89
Frequency: 400MHz
Collector-emitter voltage: 50V
Current gain: 180...450
Collector current: 1A
Type of transistor: PNP
Power dissipation: 500mW/2W
Polarisation: bipolar
товар відсутній
| RD3L080SNFRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 16A; 15W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 9.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 16A; 15W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 9.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSX051VAM30TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape
Case: SOD323HE
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape
Case: SOD323HE
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
на замовлення 2960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.27 грн |
| 90+ | 4.57 грн |
| 240+ | 3.56 грн |
| 660+ | 3.36 грн |
| RSX051VYM30FHTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape
Case: SOD323HE
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape
Case: SOD323HE
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
товар відсутній
| RQ5C060BCTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±8V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±8V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FMG4AT148 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; 10kΩ
Mounting: SMD
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Case: SOT25
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; 10kΩ
Mounting: SMD
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Case: SOT25
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
товар відсутній
| SCS205KGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 88W; TO220AC; tube
Mounting: THT
Case: TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 27A
Max. forward voltage: 1.6V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Power dissipation: 88W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 88W; TO220AC; tube
Mounting: THT
Case: TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 27A
Max. forward voltage: 1.6V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Power dissipation: 88W
товар відсутній
| SCS206AJHRTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263AB; reel,tape
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Technology: SiC
Power dissipation: 48W
Max. forward impulse current: 90A
Leakage current: 120µA
Type of diode: Schottky rectifying
Max. off-state voltage: 650V
Max. load current: 26A
Max. forward voltage: 1.63V
Load current: 6A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263AB; reel,tape
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Technology: SiC
Power dissipation: 48W
Max. forward impulse current: 90A
Leakage current: 120µA
Type of diode: Schottky rectifying
Max. off-state voltage: 650V
Max. load current: 26A
Max. forward voltage: 1.63V
Load current: 6A
Semiconductor structure: single diode
товар відсутній
| SCS206AJTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263AB; reel,tape
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Technology: SiC
Power dissipation: 48W
Max. forward impulse current: 90A
Type of diode: Schottky rectifying
Max. off-state voltage: 650V
Max. load current: 26A
Max. forward voltage: 1.55V
Load current: 6A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263AB; reel,tape
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Technology: SiC
Power dissipation: 48W
Max. forward impulse current: 90A
Type of diode: Schottky rectifying
Max. off-state voltage: 650V
Max. load current: 26A
Max. forward voltage: 1.55V
Load current: 6A
Semiconductor structure: single diode
товар відсутній
| SCS206AMC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; 31W; tube
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Technology: SiC
Power dissipation: 31W
Max. forward impulse current: 90A
Type of diode: Schottky rectifying
Max. off-state voltage: 650V
Max. load current: 21A
Max. forward voltage: 1.55V
Load current: 6A
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; 31W; tube
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Technology: SiC
Power dissipation: 31W
Max. forward impulse current: 90A
Type of diode: Schottky rectifying
Max. off-state voltage: 650V
Max. load current: 21A
Max. forward voltage: 1.55V
Load current: 6A
Semiconductor structure: single diode
товар відсутній
| SCS210AJHRTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263AB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 45A
Power dissipation: 83W
Semiconductor structure: single diode
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 1.63V
Leakage current: 0.2mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263AB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 45A
Power dissipation: 83W
Semiconductor structure: single diode
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 1.63V
Leakage current: 0.2mA
товар відсутній
| SCS210AJTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263AB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 45A
Power dissipation: 83W
Semiconductor structure: single diode
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 1.55V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263AB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 45A
Power dissipation: 83W
Semiconductor structure: single diode
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 1.55V
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 363.21 грн |
| 3+ | 303.47 грн |
| 4+ | 234.4 грн |
| 11+ | 221.17 грн |
| SCS210AMC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 34W; TO220FP-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 28A
Power dissipation: 34W
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 1.55V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 34W; TO220FP-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 28A
Power dissipation: 34W
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 1.55V
товар відсутній
| SCS212AJTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; TO263AB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 51A
Power dissipation: 88W
Semiconductor structure: single diode
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 170A
Max. forward voltage: 1.63V
Leakage current: 240µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; TO263AB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 51A
Power dissipation: 88W
Semiconductor structure: single diode
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 170A
Max. forward voltage: 1.63V
Leakage current: 240µA
товар відсутній
| SCS212AMC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 37W; TO220FP-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 32A
Power dissipation: 37W
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 170A
Max. forward voltage: 1.55V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 37W; TO220FP-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 32A
Power dissipation: 37W
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 170A
Max. forward voltage: 1.55V
товар відсутній
| SCS230KE2C |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 360W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Max. load current: 130A
Power dissipation: 360W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.48kA
Max. forward voltage: 1.6V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 360W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Max. load current: 130A
Power dissipation: 360W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.48kA
Max. forward voltage: 1.6V
товар відсутній
| 2SAR523MT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 150mW; SOT723
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 120...560
Frequency: 300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 150mW; SOT723
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 120...560
Frequency: 300MHz
товар відсутній
| 2SAR523UBTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 200mW; SOT323F
Mounting: SMD
Case: SOT323F
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 120...560
Frequency: 300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 200mW; SOT323F
Mounting: SMD
Case: SOT323F
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 120...560
Frequency: 300MHz
товар відсутній
| RB070MM-30TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1.5A; SOD123F; reel,tape
Mounting: SMD
Max. off-state voltage: 30V
Max. forward voltage: 0.49V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1.5A; SOD123F; reel,tape
Mounting: SMD
Max. off-state voltage: 30V
Max. forward voltage: 0.49V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD123F
товар відсутній
| RSQ035N03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSQ035N06HZGTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSQ035P03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RTQ035P02FHATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RVQ040N05TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 4A; Idm: 16A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±21V
On-state resistance: 74mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 4A; Idm: 16A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±21V
On-state resistance: 74mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| EMH4FHAT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
товар відсутній
| EMH9FHAT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| EMB11FHAT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| UMB4NFHATN |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
товар відсутній
| UMH9NFHATN |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 1770 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.26 грн |
| 200+ | 4.3 грн |
| 550+ | 4.06 грн |
| EMD9FHAT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| UMD9NFHATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| RB578VAM100TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 0.7A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.7A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Case: SOD323HE
Kind of package: reel; tape
Leakage current: 0.2µA
Max. forward impulse current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 0.7A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.7A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Case: SOD323HE
Kind of package: reel; tape
Leakage current: 0.2µA
Max. forward impulse current: 5A
на замовлення 1070 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.46 грн |
| 80+ | 4.71 грн |
| 230+ | 3.81 грн |
| 620+ | 3.6 грн |
| RD3L150SNTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 30A; 20W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 30A
Power dissipation: 20W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 30A; 20W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 30A
Power dissipation: 20W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RQ3L090GNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 36A
Power dissipation: 20W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 24.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 36A
Power dissipation: 20W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 24.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| R6042JNZ4C13 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; Idm: 126A; 495W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Pulsed drain current: 126A
Power dissipation: 495W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; Idm: 126A; 495W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Pulsed drain current: 126A
Power dissipation: 495W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SML-P12YTT86R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0402; yellow; 40÷100mcd; 1x0.6x0.2mm; 2.1V; 20mA; 52mW
Mounting: SMD
Case: 0402
Operating voltage: 2.1V
Dimensions: 1x0.6x0.2mm
Wavelength: 587...593nm
LED lens: transparent
Luminosity: 40...100mcd
LED current: 20mA
Front: flat
Power: 52mW
LED colour: yellow
Type of diode: LED
Category: SMD colour LEDs
Description: LED; SMD; 0402; yellow; 40÷100mcd; 1x0.6x0.2mm; 2.1V; 20mA; 52mW
Mounting: SMD
Case: 0402
Operating voltage: 2.1V
Dimensions: 1x0.6x0.2mm
Wavelength: 587...593nm
LED lens: transparent
Luminosity: 40...100mcd
LED current: 20mA
Front: flat
Power: 52mW
LED colour: yellow
Type of diode: LED
на замовлення 1290 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.03 грн |
| 45+ | 8.38 грн |
| 100+ | 6.98 грн |
| 155+ | 5.58 грн |
| 420+ | 5.29 грн |
| RGTH40TS65DGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 80A
Turn-on time: 47ns
Turn-off time: 141ns
Type of transistor: IGBT
Power dissipation: 72W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 20A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 40nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 80A
Turn-on time: 47ns
Turn-off time: 141ns
Type of transistor: IGBT
Power dissipation: 72W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 20A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 40nC
товар відсутній
| RGTH40TS65GC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 80A
Turn-on time: 47ns
Turn-off time: 141ns
Type of transistor: IGBT
Power dissipation: 72W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 20A
Gate charge: 40nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 80A
Turn-on time: 47ns
Turn-off time: 141ns
Type of transistor: IGBT
Power dissipation: 72W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 20A
Gate charge: 40nC
товар відсутній
| RGW80TS65DGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 107W; TO247-3
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 59ns
Turn-off time: 228ns
Type of transistor: IGBT
Power dissipation: 107W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 110nC
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 107W; TO247-3
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 59ns
Turn-off time: 228ns
Type of transistor: IGBT
Power dissipation: 107W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 110nC
Mounting: THT
товар відсутній
| 2SC4097T106Q |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
товар відсутній
| 2SC4097T106R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
товар відсутній