SCT3080ARC14 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: SICFET N-CH 650V 30A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
на замовлення 249 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 956.46 грн |
| 30+ | 771.73 грн |
Відгуки про товар
Написати відгук
Технічний опис SCT3080ARC14 Rohm Semiconductor
Description: SICFET N-CH 650V 30A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V, Power Dissipation (Max): 134W, Vgs(th) (Max) @ Id: 5.6V @ 5mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V.
Інші пропозиції SCT3080ARC14 за ціною від 895.58 грн до 1042.22 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SCT3080ARC14 | Виробник : ROHM Semiconductor |
SiC MOSFETs 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and |
на замовлення 541 шт: термін постачання 21-30 дні (днів) |
|
||||||
| SCT3080ARC14 | Виробник : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W Case: TO247-4 Mounting: THT Kind of package: tube Technology: SiC Features of semiconductor devices: Kelvin terminal Drain-source voltage: 650V Drain current: 30A On-state resistance: 0.104Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 48nC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 75A Power dissipation: 134W кількість в упаковці: 1 шт |
товар відсутній |
||||||||
| SCT3080ARC14 | Виробник : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W Case: TO247-4 Mounting: THT Kind of package: tube Technology: SiC Features of semiconductor devices: Kelvin terminal Drain-source voltage: 650V Drain current: 30A On-state resistance: 0.104Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 48nC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 75A Power dissipation: 134W |
товар відсутній |