| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MC10H600FNG | ONSEMI |
 Category: Level translatorsDescription: IC: digital; non-inverting,logic level voltage translator; Ch: 9 Kind of package: tube Manufacturer series: 10H Operating temperature: 0...75°C Number of inputs: 9 Case: PLCC28 Number of outputs: 9 Kind of integrated circuit: logic level voltage translator; non-inverting Number of channels: 9 Mounting: SMD Type of integrated circuit: digital |
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FDMA530PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6.8A; 2.4W; MicroFET Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.8A Power dissipation: 2.4W Case: MicroFET Gate-source voltage: ±25V On-state resistance: 65mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1133 шт: термін постачання 21-30 дні (днів) |
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FDB3652 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 61A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 786 шт: термін постачання 21-30 дні (днів) |
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D44H8G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube |
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| FDMS7656AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 49A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 96W Polarisation: unipolar Gate charge: 133nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 180A Mounting: SMD Case: Power56 |
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| FDMS7658AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 112A; Idm: 670A; 89W; Power56 Drain-source voltage: 30V Drain current: 112A On-state resistance: 2.6mΩ Type of transistor: N-MOSFET Power dissipation: 89W Polarisation: unipolar Kind of package: reel; tape Gate charge: 109nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 670A Mounting: SMD Case: Power56 |
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| NC7SB3257P6X | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; CMOS; SMD Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC70-6 Supply voltage: 4...5V DC Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 10µA Kind of output: SPDT |
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NVMFS5113PLT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -45A Power dissipation: 75W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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NVMFS5A160PLZT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; 100A; 200W; DFN5x6 Mounting: SMD Drain current: 100A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN5x6 On-state resistance: 7.7mΩ Power dissipation: 200W Polarisation: unipolar |
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NVMFS5C604NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Case: DFN5x6 Drain-source voltage: 60V Drain current: 203A On-state resistance: 1.2mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Kind of package: reel; tape |
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NVMFS6H800NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 100W; SO8 Mounting: SMD Drain current: 20A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 On-state resistance: 2.1mΩ Power dissipation: 100W Polarisation: unipolar |
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| NVMFS6H818NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5 Mounting: SMD Drain current: 87A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN5 On-state resistance: 3.7mΩ Pulsed drain current: 900A Power dissipation: 68W Gate charge: 46nC Polarisation: unipolar |
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BAS19LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 120V; 0.2A; SOT23; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.2A Semiconductor structure: single diode Capacitance: 5pF Case: SOT23 Max. forward voltage: 1V Kind of package: reel; tape |
на замовлення 450 шт: термін постачання 21-30 дні (днів) |
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| FSA1153UCX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; WLCSP12; 2.7÷5.5VDC; reel,tape; OUT: DP3T Technology: CMOS; TTL Case: WLCSP12 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 35µA Number of channels: 1 Supply voltage: 2.7...5.5V DC Type of integrated circuit: analog switch Kind of output: DP3T |
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FSL116HR | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1A; 650V; 100kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 1A Output voltage: 650V Frequency: 0.1MHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -40...105°C Topology: flyback Input voltage: 85...265V On-state resistance: 10Ω Duty cycle factor: 71...83% Power: 14W Application: SMPS Operating voltage: 8...24V |
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NLVHC4851ADTR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; 40uA Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Case: TSSOP16 Supply voltage: 2...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 40µA Application: automotive industry |
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| FDMS86150 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 187W; PQFN8 Mounting: SMD Case: PQFN8 Kind of package: reel; tape Power dissipation: 187W Polarisation: unipolar Drain current: 90A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 9.1mΩ |
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| FDMS86150ET100 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 617A; 187W; Power56 Mounting: SMD Case: Power56 Kind of package: reel; tape Power dissipation: 187W Gate charge: 62nC Polarisation: unipolar Drain current: 90A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 9.1mΩ Pulsed drain current: 617A |
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NLVVHC1G66DTT1G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; Outputs: 1; TSSOP5; 2÷5.5VDC; reel,tape Type of integrated circuit: analog switch Technology: CMOS Case: TSSOP5 Number of channels: 1 Number of outputs: 1 Supply voltage: 2...5.5V DC Mounting: SMD Operating temperature: -55...125°C Application: automotive industry Kind of package: reel; tape Kind of output: SPST-NO Quiescent current: 40µA Number of inputs: 2 |
на замовлення 850 шт: термін постачання 21-30 дні (днів) |
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MC74VHC1G66DFT1G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; SC88A; 2÷5.5VDC; reel,tape; OUT: SPST-NO Type of integrated circuit: analog switch Number of channels: 1 Case: SC88A Supply voltage: 2...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Kind of output: SPST-NO Technology: CMOS Manufacturer series: VHC |
на замовлення 1065 шт: термін постачання 21-30 дні (днів) |
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MC74VHC1G66DTT1G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; TSSOP5; 2÷5.5VDC; reel,tape; OUT: SPST-NO Type of integrated circuit: analog switch Technology: CMOS Case: TSSOP5 Number of channels: 1 Supply voltage: 2...5.5V DC Mounting: SMD Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: SPST-NO Manufacturer series: VHC |
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NS5B1G385DFT2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; Outputs: 1; SC70; 2÷5.5VDC; reel,tape; TTL Type of integrated circuit: analog switch Number of channels: 1 Number of inputs: 2 Technology: TTL Mounting: SMD Case: SC70 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: SPST-NO Number of outputs: 1 |
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NL27WZ126USG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; US8; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: US8 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state |
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PZTA64 | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 1W; SOT223 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
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| FDMS8820 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 101A; Idm: 634A; 78W; Power56 Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Gate charge: 88nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 634A Mounting: SMD Case: Power56 Drain-source voltage: 30V Drain current: 101A On-state resistance: 2.8mΩ |
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| FDMC8882 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 18W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Power dissipation: 18W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 17.4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| CAT3626HV4-GT2 | ONSEMI |
Category: LED drivers Description: IC: driver; LED controller; I2C; TQFN16; 32mA; 4.2V; Ch: 6; 3÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: LED controller Interface: I2C Case: TQFN16 Output current: 32mA Output voltage: 4.2V Number of channels: 6 Supply voltage: 3...5.5V DC Mounting: SMD Operating temperature: -40...85°C Frequency: 1MHz |
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FDS89161 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 31W Case: SO8 Gate-source voltage: ±20V On-state resistance: 176mΩ Mounting: SMD Gate charge: 4.1nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2346 шт: термін постачання 21-30 дні (днів) |
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FDS89161LZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 31W Case: SO8 Gate-source voltage: ±20V On-state resistance: 182mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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RS1A | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Mounting: SMD Capacitance: 10pF Max. forward impulse current: 30A Case: DO214AC; SMA Kind of package: reel; tape Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 50V Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Power dissipation: 1.19W Type of diode: rectifying |
на замовлення 7819 шт: термін постачання 21-30 дні (днів) |
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RB751V40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SOD323; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Case: SOD323 Kind of package: reel; tape |
на замовлення 5697 шт: термін постачання 21-30 дні (днів) |
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| NCP1095DB | ONSEMI |
Category: ETHERNET interfaces -integrated circuits Description: IC: PoE PD controller; TSSOP16; -40÷125°C; 57VDC Type of integrated circuit: PoE PD controller Case: TSSOP16 Mounting: SMD Operating temperature: -40...125°C Communictions protocol: Ethernet; IEEE 802.3af; IEEE 802.3at; IEEE 802.3bt Supply voltage: 57V DC Number of ports: 1 |
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| NCV431AIDMR2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±1%; Micro8; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: Micro8 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Application: automotive industry Operating voltage: 2.495...36V |
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NCV431AIDR2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Application: automotive industry Operating voltage: 2.495...36V |
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| NCV431ASNT1G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA Mounting: SMD Case: TSOP5 Operating temperature: -40...125°C Tolerance: ±1% Operating voltage: 1.24...16V Maximum output current: 20mA Application: automotive industry Kind of package: reel; tape Reference voltage: 1.24V Type of integrated circuit: voltage reference source |
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BSR16 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23 Polarisation: bipolar Case: SOT23 Frequency: 300MHz Collector-emitter voltage: 60V Collector current: 0.8A Type of transistor: PNP Power dissipation: 0.35W Kind of package: reel; tape Mounting: SMD |
на замовлення 1183 шт: термін постачання 21-30 дні (днів) |
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MOCD223M | ONSEMI |
 Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 90V; SO8 Case: SO8 Mounting: SMD Number of channels: 1 Collector-emitter voltage: 90V Turn-on time: 8µs Turn-off time: 55µs Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 500-1000%@1mA Type of optocoupler: optocoupler |
на замовлення 326 шт: термін постачання 21-30 дні (днів) |
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MC14081BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Delay time: 130ns Family: HEF4000B |
на замовлення 517 шт: термін постачання 21-30 дні (днів) |
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MC14081BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; HEF4000B; 3÷18VDC Mounting: SMD Operating temperature: -55...125°C Case: SO14 Manufacturer series: HEF4000B Number of inputs: 2 Kind of package: reel; tape Number of channels: quad; 4 Delay time: 130ns Supply voltage: 3...18V DC Kind of gate: AND Type of integrated circuit: digital Technology: CMOS |
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MC14081BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HEF4000B; 3÷18VDC Mounting: SMD Operating temperature: -55...125°C Case: TSSOP14 Manufacturer series: HEF4000B Number of inputs: 2 Kind of package: reel; tape Number of channels: quad; 4 Delay time: 130ns Supply voltage: 3...18V DC Kind of gate: AND Type of integrated circuit: digital Technology: CMOS |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| MC74ACT240DWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Technology: TTL Mounting: SMD Case: SOIC20 Manufacturer series: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: ACT |
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BCX17LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
на замовлення 5452 шт: термін постачання 21-30 дні (днів) |
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MJW21194G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3 Polarisation: bipolar Kind of package: tube Case: TO247-3 Mounting: THT Power dissipation: 200W Frequency: 4MHz Collector-emitter voltage: 250V Current gain: 8...80 Collector current: 16A Type of transistor: NPN |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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MJW21195G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO247-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 200W Case: TO247-3 Mounting: THT Kind of package: tube Frequency: 4MHz |
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| FQD6N25TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 2.6A; Idm: 17.6A; 45W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 2.6A Pulsed drain current: 17.6A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced |
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MUR1615CTG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 8A x2 Max. load current: 16A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. forward impulse current: 100A |
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MMSD701T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 200mA; SOD123; reel,tape Type of diode: Schottky switching Semiconductor structure: single diode Max. off-state voltage: 70V Load current: 0.2A Case: SOD123 Max. forward voltage: 1V Mounting: SMD Kind of package: reel; tape Power dissipation: 0.225W Capacitance: 1pF |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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| NLAS5123MUR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; uDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT Type of integrated circuit: analog switch Number of channels: 1 Case: uDFN6 Supply voltage: 1.65...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: SPDT Quiescent current: 1µA |
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FDD770N15A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Power dissipation: 56.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 197 шт: термін постачання 21-30 дні (днів) |
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NTR3C21NZT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; 0.47W; SOT23 Mounting: SMD Kind of package: reel; tape Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Polarisation: unipolar Power dissipation: 0.47W Type of transistor: N-MOSFET On-state resistance: 24mΩ Drain current: 2.6A Drain-source voltage: 20V |
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NC7WZ132K8X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 2; IN: 2; SMD; MO187,US8; 1.65÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 2 Mounting: SMD Case: MO187; US8 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger |
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FDN339AN | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 3A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 61mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 5513 шт: термін постачання 21-30 дні (днів) |
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MMBZ5248BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 18V; 7mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.225W Zener voltage: 18V Zener current: 7mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA |
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| FAN5622SX | ONSEMI |
Category: LED drivers Description: IC: driver; LED controller; SWD; TSOT23-6; Ch: 2; 2.7÷5.5VDC; 30mA Type of integrated circuit: driver Kind of integrated circuit: LED controller Interface: SWD Case: TSOT23-6 Number of channels: 2 Supply voltage: 2.7...5.5V DC Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...85°C Maximum output current: 30mA |
на замовлення 2946 шт: термін постачання 21-30 дні (днів) |
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MOC3031M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC303XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 250V Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC303XM |
на замовлення 1838 шт: термін постачання 21-30 дні (днів) |
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NTGS4141NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.6A Power dissipation: 1W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 4950 шт: термін постачання 21-30 дні (днів) |
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| FDMC89521L | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 8.2A; Idm: 40A; 16W; Power33 Kind of package: reel; tape Pulsed drain current: 40A Power dissipation: 16W Gate charge: 24nC Polarisation: unipolar Drain current: 8.2A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Case: Power33 On-state resistance: 27mΩ Mounting: SMD |
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NJW0302G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 15A Power dissipation: 150W Case: TO3P Current gain: 75...150 Mounting: THT Kind of package: tube Frequency: 30MHz Application: automotive industry |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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| 74LCX08BQX | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; SMD; QFN14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: QFN14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Family: LCX |
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74LCX08M | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 10µA Family: LCX |
товар відсутній |
| MC10H600FNG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 9
Kind of package: tube
Manufacturer series: 10H
Operating temperature: 0...75°C
Number of inputs: 9
Case: PLCC28
Number of outputs: 9
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 9
Mounting: SMD
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 9
Kind of package: tube
Manufacturer series: 10H
Operating temperature: 0...75°C
Number of inputs: 9
Case: PLCC28
Number of outputs: 9
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 9
Mounting: SMD
Type of integrated circuit: digital
товар відсутній
| FDMA530PZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.8A; 2.4W; MicroFET
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.8A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±25V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.8A; 2.4W; MicroFET
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.8A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±25V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1133 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 74.19 грн |
| 10+ | 38.4 грн |
| 25+ | 34.12 грн |
| 27+ | 31.17 грн |
| 75+ | 29.47 грн |
| 500+ | 28.68 грн |
| FDB3652 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 61A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 61A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 786 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.12 грн |
| 5+ | 108.89 грн |
| 10+ | 88.57 грн |
| 27+ | 84.21 грн |
| D44H8G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
товар відсутній
| FDMS7656AS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 133nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 180A
Mounting: SMD
Case: Power56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 133nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 180A
Mounting: SMD
Case: Power56
товар відсутній
| FDMS7658AS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 112A; Idm: 670A; 89W; Power56
Drain-source voltage: 30V
Drain current: 112A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 109nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 670A
Mounting: SMD
Case: Power56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 112A; Idm: 670A; 89W; Power56
Drain-source voltage: 30V
Drain current: 112A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 109nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 670A
Mounting: SMD
Case: Power56
товар відсутній
| NC7SB3257P6X |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; CMOS; SMD
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-6
Supply voltage: 4...5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Kind of output: SPDT
Category: Decoders, multiplexers, switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; CMOS; SMD
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-6
Supply voltage: 4...5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Kind of output: SPDT
товар відсутній
| NVMFS5113PLT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -45A
Power dissipation: 75W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -45A
Power dissipation: 75W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NVMFS5A160PLZT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 100A; 200W; DFN5x6
Mounting: SMD
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5x6
On-state resistance: 7.7mΩ
Power dissipation: 200W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 100A; 200W; DFN5x6
Mounting: SMD
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5x6
On-state resistance: 7.7mΩ
Power dissipation: 200W
Polarisation: unipolar
товар відсутній
| NVMFS5C604NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DFN5x6
Drain-source voltage: 60V
Drain current: 203A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DFN5x6
Drain-source voltage: 60V
Drain current: 203A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: reel; tape
товар відсутній
| NVMFS6H800NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 100W; SO8
Mounting: SMD
Drain current: 20A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 2.1mΩ
Power dissipation: 100W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 100W; SO8
Mounting: SMD
Drain current: 20A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 2.1mΩ
Power dissipation: 100W
Polarisation: unipolar
товар відсутній
| NVMFS6H818NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5
Mounting: SMD
Drain current: 87A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5
On-state resistance: 3.7mΩ
Pulsed drain current: 900A
Power dissipation: 68W
Gate charge: 46nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5
Mounting: SMD
Drain current: 87A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5
On-state resistance: 3.7mΩ
Pulsed drain current: 900A
Power dissipation: 68W
Gate charge: 46nC
Polarisation: unipolar
товар відсутній
| BAS19LT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
на замовлення 450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.47 грн |
| 225+ | 1.72 грн |
| FSA1153UCX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WLCSP12; 2.7÷5.5VDC; reel,tape; OUT: DP3T
Technology: CMOS; TTL
Case: WLCSP12
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 35µA
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: analog switch
Kind of output: DP3T
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WLCSP12; 2.7÷5.5VDC; reel,tape; OUT: DP3T
Technology: CMOS; TTL
Case: WLCSP12
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 35µA
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: analog switch
Kind of output: DP3T
товар відсутній
| FSL116HR |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1A; 650V; 100kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...105°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 10Ω
Duty cycle factor: 71...83%
Power: 14W
Application: SMPS
Operating voltage: 8...24V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1A; 650V; 100kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...105°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 10Ω
Duty cycle factor: 71...83%
Power: 14W
Application: SMPS
Operating voltage: 8...24V
товар відсутній
| NLVHC4851ADTR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; 40uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: 2...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 40µA
Application: automotive industry
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; 40uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: 2...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 40µA
Application: automotive industry
товар відсутній
| FDMS86150 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 187W; PQFN8
Mounting: SMD
Case: PQFN8
Kind of package: reel; tape
Power dissipation: 187W
Polarisation: unipolar
Drain current: 90A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 187W; PQFN8
Mounting: SMD
Case: PQFN8
Kind of package: reel; tape
Power dissipation: 187W
Polarisation: unipolar
Drain current: 90A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
товар відсутній
| FDMS86150ET100 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 617A; 187W; Power56
Mounting: SMD
Case: Power56
Kind of package: reel; tape
Power dissipation: 187W
Gate charge: 62nC
Polarisation: unipolar
Drain current: 90A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Pulsed drain current: 617A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 617A; 187W; Power56
Mounting: SMD
Case: Power56
Kind of package: reel; tape
Power dissipation: 187W
Gate charge: 62nC
Polarisation: unipolar
Drain current: 90A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Pulsed drain current: 617A
товар відсутній
| NLVVHC1G66DTT1G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; Outputs: 1; TSSOP5; 2÷5.5VDC; reel,tape
Type of integrated circuit: analog switch
Technology: CMOS
Case: TSSOP5
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Application: automotive industry
Kind of package: reel; tape
Kind of output: SPST-NO
Quiescent current: 40µA
Number of inputs: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; Outputs: 1; TSSOP5; 2÷5.5VDC; reel,tape
Type of integrated circuit: analog switch
Technology: CMOS
Case: TSSOP5
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Application: automotive industry
Kind of package: reel; tape
Kind of output: SPST-NO
Quiescent current: 40µA
Number of inputs: 2
на замовлення 850 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 19.78 грн |
| 25+ | 14.59 грн |
| 100+ | 10.96 грн |
| 158+ | 5.37 грн |
| 434+ | 5.01 грн |
| MC74VHC1G66DFT1G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC88A; 2÷5.5VDC; reel,tape; OUT: SPST-NO
Type of integrated circuit: analog switch
Number of channels: 1
Case: SC88A
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: SPST-NO
Technology: CMOS
Manufacturer series: VHC
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC88A; 2÷5.5VDC; reel,tape; OUT: SPST-NO
Type of integrated circuit: analog switch
Number of channels: 1
Case: SC88A
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: SPST-NO
Technology: CMOS
Manufacturer series: VHC
на замовлення 1065 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 9.77 грн |
| 50+ | 7.99 грн |
| 145+ | 6.03 грн |
| 390+ | 5.66 грн |
| MC74VHC1G66DTT1G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; TSSOP5; 2÷5.5VDC; reel,tape; OUT: SPST-NO
Type of integrated circuit: analog switch
Technology: CMOS
Case: TSSOP5
Number of channels: 1
Supply voltage: 2...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: SPST-NO
Manufacturer series: VHC
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; TSSOP5; 2÷5.5VDC; reel,tape; OUT: SPST-NO
Type of integrated circuit: analog switch
Technology: CMOS
Case: TSSOP5
Number of channels: 1
Supply voltage: 2...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: SPST-NO
Manufacturer series: VHC
товар відсутній
| NS5B1G385DFT2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; Outputs: 1; SC70; 2÷5.5VDC; reel,tape; TTL
Type of integrated circuit: analog switch
Number of channels: 1
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SC70
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: SPST-NO
Number of outputs: 1
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; Outputs: 1; SC70; 2÷5.5VDC; reel,tape; TTL
Type of integrated circuit: analog switch
Number of channels: 1
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SC70
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: SPST-NO
Number of outputs: 1
товар відсутній
| NL27WZ126USG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; US8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; US8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
товар відсутній
| PZTA64 |
|
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 1W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 1W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
товар відсутній
| FDMS8820 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 101A; Idm: 634A; 78W; Power56
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Gate charge: 88nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 634A
Mounting: SMD
Case: Power56
Drain-source voltage: 30V
Drain current: 101A
On-state resistance: 2.8mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 101A; Idm: 634A; 78W; Power56
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Gate charge: 88nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 634A
Mounting: SMD
Case: Power56
Drain-source voltage: 30V
Drain current: 101A
On-state resistance: 2.8mΩ
товар відсутній
| FDMC8882 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| CAT3626HV4-GT2 |
|
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED controller; I2C; TQFN16; 32mA; 4.2V; Ch: 6; 3÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED controller
Interface: I2C
Case: TQFN16
Output current: 32mA
Output voltage: 4.2V
Number of channels: 6
Supply voltage: 3...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Frequency: 1MHz
Category: LED drivers
Description: IC: driver; LED controller; I2C; TQFN16; 32mA; 4.2V; Ch: 6; 3÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED controller
Interface: I2C
Case: TQFN16
Output current: 32mA
Output voltage: 4.2V
Number of channels: 6
Supply voltage: 3...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Frequency: 1MHz
товар відсутній
| FDS89161 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 176mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 176mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2346 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 79.85 грн |
| 13+ | 68.97 грн |
| 34+ | 65.34 грн |
| 500+ | 62.43 грн |
| FDS89161LZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 182mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 182mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RS1A |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Kind of package: reel; tape
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 50V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Power dissipation: 1.19W
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Kind of package: reel; tape
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 50V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Power dissipation: 1.19W
Type of diode: rectifying
на замовлення 7819 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 31+ | 12.67 грн |
| 50+ | 10.67 грн |
| 103+ | 8.21 грн |
| 283+ | 7.77 грн |
| RB751V40T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Case: SOD323
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Case: SOD323
Kind of package: reel; tape
на замовлення 5697 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 122+ | 3.21 грн |
| 136+ | 2.68 грн |
| 430+ | 1.95 грн |
| 1181+ | 1.84 грн |
| NCP1095DB |
|
Виробник: ONSEMI
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE PD controller; TSSOP16; -40÷125°C; 57VDC
Type of integrated circuit: PoE PD controller
Case: TSSOP16
Mounting: SMD
Operating temperature: -40...125°C
Communictions protocol: Ethernet; IEEE 802.3af; IEEE 802.3at; IEEE 802.3bt
Supply voltage: 57V DC
Number of ports: 1
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE PD controller; TSSOP16; -40÷125°C; 57VDC
Type of integrated circuit: PoE PD controller
Case: TSSOP16
Mounting: SMD
Operating temperature: -40...125°C
Communictions protocol: Ethernet; IEEE 802.3af; IEEE 802.3at; IEEE 802.3bt
Supply voltage: 57V DC
Number of ports: 1
товар відсутній
| NCV431AIDMR2G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; Micro8; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: Micro8
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; Micro8; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: Micro8
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
Operating voltage: 2.495...36V
товар відсутній
| NCV431AIDR2G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
Operating voltage: 2.495...36V
товар відсутній
| NCV431ASNT1G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA
Mounting: SMD
Case: TSOP5
Operating temperature: -40...125°C
Tolerance: ±1%
Operating voltage: 1.24...16V
Maximum output current: 20mA
Application: automotive industry
Kind of package: reel; tape
Reference voltage: 1.24V
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA
Mounting: SMD
Case: TSOP5
Operating temperature: -40...125°C
Tolerance: ±1%
Operating voltage: 1.24...16V
Maximum output current: 20mA
Application: automotive industry
Kind of package: reel; tape
Reference voltage: 1.24V
Type of integrated circuit: voltage reference source
товар відсутній
| BSR16 |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23
Polarisation: bipolar
Case: SOT23
Frequency: 300MHz
Collector-emitter voltage: 60V
Collector current: 0.8A
Type of transistor: PNP
Power dissipation: 0.35W
Kind of package: reel; tape
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23
Polarisation: bipolar
Case: SOT23
Frequency: 300MHz
Collector-emitter voltage: 60V
Collector current: 0.8A
Type of transistor: PNP
Power dissipation: 0.35W
Kind of package: reel; tape
Mounting: SMD
на замовлення 1183 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 28.14 грн |
| 19+ | 19.31 грн |
| 29+ | 12.56 грн |
| 100+ | 8.28 грн |
| 124+ | 6.82 грн |
| 341+ | 6.39 грн |
| MOCD223M | |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 90V; SO8
Case: SO8
Mounting: SMD
Number of channels: 1
Collector-emitter voltage: 90V
Turn-on time: 8µs
Turn-off time: 55µs
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 90V; SO8
Case: SO8
Mounting: SMD
Number of channels: 1
Collector-emitter voltage: 90V
Turn-on time: 8µs
Turn-off time: 55µs
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Type of optocoupler: optocoupler
на замовлення 326 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 74.27 грн |
| 7+ | 55.17 грн |
| 20+ | 42.25 грн |
| 55+ | 39.93 грн |
| MC14081BDG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 130ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 130ns
Family: HEF4000B
на замовлення 517 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 33.85 грн |
| 15+ | 24.32 грн |
| 42+ | 20.27 грн |
| 115+ | 19.17 грн |
| MC14081BDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; HEF4000B; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Case: SO14
Manufacturer series: HEF4000B
Number of inputs: 2
Kind of package: reel; tape
Number of channels: quad; 4
Delay time: 130ns
Supply voltage: 3...18V DC
Kind of gate: AND
Type of integrated circuit: digital
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; HEF4000B; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Case: SO14
Manufacturer series: HEF4000B
Number of inputs: 2
Kind of package: reel; tape
Number of channels: quad; 4
Delay time: 130ns
Supply voltage: 3...18V DC
Kind of gate: AND
Type of integrated circuit: digital
Technology: CMOS
товар відсутній
| MC14081BDTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HEF4000B; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP14
Manufacturer series: HEF4000B
Number of inputs: 2
Kind of package: reel; tape
Number of channels: quad; 4
Delay time: 130ns
Supply voltage: 3...18V DC
Kind of gate: AND
Type of integrated circuit: digital
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HEF4000B; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP14
Manufacturer series: HEF4000B
Number of inputs: 2
Kind of package: reel; tape
Number of channels: quad; 4
Delay time: 130ns
Supply voltage: 3...18V DC
Kind of gate: AND
Type of integrated circuit: digital
Technology: CMOS
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 33.23 грн |
| 14+ | 26.86 грн |
| 47+ | 17.92 грн |
| 128+ | 16.94 грн |
| MC74ACT240DWR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SOIC20
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: ACT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SOIC20
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: ACT
товар відсутній
| BCX17LT1G | |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
на замовлення 5452 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 12.51 грн |
| 38+ | 9.66 грн |
| 53+ | 6.88 грн |
| 100+ | 3.79 грн |
| 250+ | 3.38 грн |
| 430+ | 1.95 грн |
| 1181+ | 1.84 грн |
| MJW21194G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3
Polarisation: bipolar
Kind of package: tube
Case: TO247-3
Mounting: THT
Power dissipation: 200W
Frequency: 4MHz
Collector-emitter voltage: 250V
Current gain: 8...80
Collector current: 16A
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3
Polarisation: bipolar
Kind of package: tube
Case: TO247-3
Mounting: THT
Power dissipation: 200W
Frequency: 4MHz
Collector-emitter voltage: 250V
Current gain: 8...80
Collector current: 16A
Type of transistor: NPN
на замовлення 58 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 377.61 грн |
| 3+ | 315.06 грн |
| 4+ | 241.74 грн |
| 10+ | 228.67 грн |
| MJW21195G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Kind of package: tube
Frequency: 4MHz
товар відсутній
| FQD6N25TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.6A; Idm: 17.6A; 45W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.6A
Pulsed drain current: 17.6A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.6A; Idm: 17.6A; 45W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.6A
Pulsed drain current: 17.6A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MUR1615CTG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. forward impulse current: 100A
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. forward impulse current: 100A
товар відсутній
| MMSD701T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 200mA; SOD123; reel,tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. off-state voltage: 70V
Load current: 0.2A
Case: SOD123
Max. forward voltage: 1V
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.225W
Capacitance: 1pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 200mA; SOD123; reel,tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. off-state voltage: 70V
Load current: 0.2A
Case: SOD123
Max. forward voltage: 1V
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.225W
Capacitance: 1pF
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 9.38 грн |
| NLAS5123MUR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; uDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Number of channels: 1
Case: uDFN6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 1µA
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; uDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Number of channels: 1
Case: uDFN6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 1µA
товар відсутній
| FDD770N15A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 197 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 72.71 грн |
| 8+ | 49.66 грн |
| 21+ | 41.09 грн |
| 57+ | 38.84 грн |
| NTR3C21NZT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; 0.47W; SOT23
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 0.47W
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 2.6A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; 0.47W; SOT23
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 0.47W
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 2.6A
Drain-source voltage: 20V
товар відсутній
| NC7WZ132K8X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 2; SMD; MO187,US8; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: MO187; US8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 2; SMD; MO187,US8; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: MO187; US8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
товар відсутній
| FDN339AN |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 5513 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 35.42 грн |
| 25+ | 19.6 грн |
| 57+ | 14.95 грн |
| 157+ | 14.16 грн |
| MMBZ5248BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 18V; 7mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 18V
Zener current: 7mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 18V; 7mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 18V
Zener current: 7mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| FAN5622SX |
|
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED controller; SWD; TSOT23-6; Ch: 2; 2.7÷5.5VDC; 30mA
Type of integrated circuit: driver
Kind of integrated circuit: LED controller
Interface: SWD
Case: TSOT23-6
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Maximum output current: 30mA
Category: LED drivers
Description: IC: driver; LED controller; SWD; TSOT23-6; Ch: 2; 2.7÷5.5VDC; 30mA
Type of integrated circuit: driver
Kind of integrated circuit: LED controller
Interface: SWD
Case: TSOT23-6
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Maximum output current: 30mA
на замовлення 2946 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 36.74 грн |
| 25+ | 30.64 грн |
| 36+ | 23.81 грн |
| 98+ | 22.5 грн |
| MOC3031M |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC303XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 250V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC303XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC303XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 250V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC303XM
на замовлення 1838 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 74.27 грн |
| 8+ | 45.88 грн |
| 25+ | 41.31 грн |
| 26+ | 33.32 грн |
| 70+ | 31.51 грн |
| NTGS4141NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 4950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 25.1 грн |
| 25+ | 18 грн |
| 65+ | 13.07 грн |
| 175+ | 12.36 грн |
| FDMC89521L |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8.2A; Idm: 40A; 16W; Power33
Kind of package: reel; tape
Pulsed drain current: 40A
Power dissipation: 16W
Gate charge: 24nC
Polarisation: unipolar
Drain current: 8.2A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: Power33
On-state resistance: 27mΩ
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8.2A; Idm: 40A; 16W; Power33
Kind of package: reel; tape
Pulsed drain current: 40A
Power dissipation: 16W
Gate charge: 24nC
Polarisation: unipolar
Drain current: 8.2A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: Power33
On-state resistance: 27mΩ
Mounting: SMD
товар відсутній
| NJW0302G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.48 грн |
| 3+ | 169.87 грн |
| 7+ | 129.95 грн |
| 18+ | 122.69 грн |
| 74LCX08BQX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; QFN14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: QFN14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Family: LCX
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; QFN14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: QFN14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Family: LCX
товар відсутній
| 74LCX08M |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Family: LCX
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Family: LCX
товар відсутній