| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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74VHC273MTCX | ONSEMI |
 Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Manufacturer series: VHC Mounting: SMD Case: TSSOP20 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered |
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74VHC273MX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; SO20-W; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Manufacturer series: VHC Mounting: SMD Case: SO20-W Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered |
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MMBZ5245BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 15V; 8.5mA; SMD; reel,tape; SOT23; Ir: 0.1uA Type of diode: Zener Power dissipation: 0.225W Zener voltage: 15V Zener current: 8.5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA |
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SZMMBZ5245BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 15V; SMD; reel,tape; SOT23-3; single diode Type of diode: Zener Power dissipation: 0.225W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23-3 Semiconductor structure: single diode Leakage current: 0.1µA Application: automotive industry |
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MC74VHCT08ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷5.5VDC; 40uA Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Family: VHCT |
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MC74VHCT08ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: VHCT |
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| FPF2163 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WDFN6; reel,tape; -40÷85°C Mounting: SMD Supply voltage: 1.8...5.5V DC On-state resistance: 135mΩ Type of integrated circuit: power switch Number of channels: 1 Active logical level: high Integrated circuit features: thermal protection; undervoltage protection Kind of package: reel; tape Operating temperature: -40...85°C Case: WDFN6 |
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| FPF2164 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 150mA÷1.5A; Ch: 1; P-Channel; SMD; MLP6 Mounting: SMD Supply voltage: 1.8...5.5V DC On-state resistance: 0.18Ω Output current: 150mA...1.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Kind of package: reel; tape Kind of integrated circuit: high-side Case: MLP6 |
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| FPF2165 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 150mA÷1.5A; Ch: 1; P-Channel; SMD; MLP6 Mounting: SMD Supply voltage: 1.8...5.5V DC On-state resistance: 0.18Ω Output current: 150mA...1.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Kind of package: reel; tape Kind of integrated circuit: high-side Case: MLP6 |
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sm05t1g | ONSEMI |
 Category: Transil diodes - arraysDescription: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23-3 Type of diode: TVS array Breakdown voltage: 6.7V Max. forward impulse current: 17A Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode; double Mounting: SMD Case: SOT23-3 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 10µA Kind of package: reel; tape |
на замовлення 5930 шт: термін постачання 21-30 дні (днів) |
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FDS5670 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced |
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CM1231-02SO | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 0.225W; SOT23-6; Features: ESD protection Type of diode: TVS array Breakdown voltage: 6V Peak pulse power dissipation: 0.225W Mounting: SMD Case: SOT23-6 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 2 Kind of package: reel; tape |
на замовлення 745 шт: термін постачання 21-30 дні (днів) |
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| FDMC6686P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -377A; 40W; Power33 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -56A Pulsed drain current: -377A Power dissipation: 40W Case: Power33 Gate-source voltage: ±8V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDG316P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.6A; 0.75W; SC70-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.6A Power dissipation: 0.75W Case: SC70-6 Gate-source voltage: ±20V On-state resistance: 0.31Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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MOC207M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: SO8 Turn-on time: 3.2µs Turn-off time: 4.7µs |
на замовлення 2588 шт: термін постачання 21-30 дні (днів) |
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MOC207R2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 100-200%@10mA Case: SO8 Turn-on time: 3.2µs Turn-off time: 4.7µs |
на замовлення 952 шт: термін постачання 21-30 дні (днів) |
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| MOCD208M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 40-125%@10mA Case: SO8 Turn-on time: 7.5µs Turn-off time: 5.7µs |
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MOC8204SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 400V Mounting: SMD Case: Gull wing 6 Insulation voltage: 4.17kV Kind of output: transistor CTR@If: 20%@10mA Type of optocoupler: optocoupler Collector-emitter voltage: 400V Turn-on time: 5µs Turn-off time: 5µs Number of channels: 1 |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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| MM3Z20VB | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 20V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 20V Kind of package: reel; tape Case: SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 45nA Max. forward voltage: 1V |
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MJ11032G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 120V; 30A; 300W; TO3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 120V Collector current: 30A Power dissipation: 300W Case: TO3 Mounting: THT Kind of package: in-tray |
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NSVMMUN2212LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Current gain: 60...100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ |
на замовлення 2565 шт: термін постачання 21-30 дні (днів) |
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FL7701MX | ONSEMI |
Category: LED drivers Description: IC: driver; LED controller; SO8; 250mA Case: SO8 Mounting: SMD Type of integrated circuit: driver Maximum output current: 0.25A Integrated circuit features: digitally implemented active power factor correction function; linear dimming Kind of integrated circuit: LED controller |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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PZTA92T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 1.5W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
на замовлення 1400 шт: термін постачання 21-30 дні (днів) |
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MBRS2H100T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape Kind of package: reel; tape Max. off-state voltage: 100V Max. load current: 130A Max. forward voltage: 0.65V Load current: 2A Semiconductor structure: single diode Type of diode: Schottky rectifying Mounting: SMD Case: SMB |
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M74VHC1GT50DTT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; TTL; SMD; TSOP5; VHC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Technology: TTL Case: TSOP5 Number of channels: 1 Supply voltage: 2...5.5V DC Mounting: SMD Operating temperature: -55...125°C Manufacturer series: VHC |
на замовлення 900 шт: термін постачання 21-30 дні (днів) |
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BZX84C20LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA |
на замовлення 3925 шт: термін постачання 21-30 дні (днів) |
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BZX84C22LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA |
на замовлення 5850 шт: термін постачання 21-30 дні (днів) |
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MJ11012G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 30A; 200W; TO3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 30A Power dissipation: 200W Case: TO3 Mounting: THT Kind of package: in-tray |
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MJ11028G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 50A Power dissipation: 300W Case: TO3 Mounting: THT Kind of package: in-tray |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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FDP050AN06A0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB Technology: PowerTrench® Case: TO220AB Mounting: THT On-state resistance: 11mΩ Kind of package: tube Power dissipation: 245W Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 18A Type of transistor: N-MOSFET Polarisation: unipolar |
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1N5374BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 75V; bulk; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 75V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
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MC33172DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 1.8MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 2.1V/μs Operating temperature: -40...85°C Input offset voltage: 2mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: reel; tape |
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ESD5Z7.0T1G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 200W; 7.5V; 8.8A; unidirectional; SOD523; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 7V Breakdown voltage: 7.5V Max. forward impulse current: 8.8A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 10nA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 |
на замовлення 2050 шт: термін постачання 21-30 дні (днів) |
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| NC7SP126L6X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SIP6; TinyLogic Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Number of inputs: 2 Manufacturer series: TinyLogic Family: NC Type of integrated circuit: digital Kind of output: 3-state Technology: CMOS Kind of package: reel; tape Case: SIP6 Kind of integrated circuit: 3-state; buffer Number of channels: 1 Mounting: SMD |
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| NRVBD650CTT4G-VF01 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 3Ax2; DPAK; reel,tape Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: common cathode; double Max. off-state voltage: 50V Application: automotive industry Max. forward impulse current: 75A Max. load current: 6A Load current: 3A x2 Max. forward voltage: 0.9V Type of diode: Schottky rectifying |
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NCP5901BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; SO8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -10...125°C |
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NCP5901DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; SO8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -10...125°C |
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SBAV70LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 31A Leakage current: 0.1mA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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SBAV70LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 31A Leakage current: 0.1mA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
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SBAS16LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
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NB3N551DR2G | ONSEMI |
Category: Level translators Description: IC: digital; fanout buffer; Ch: 1; CMOS; 3÷5.5VDC; SMD; SO8; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: fanout buffer Number of channels: 1 Technology: CMOS Supply voltage: 3...5.5V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape |
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FPF2103 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; SOT23-5; reel,tape; -40÷125°C Type of integrated circuit: power switch Mounting: SMD Number of channels: 1 Case: SOT23-5 Operating temperature: -40...125°C Integrated circuit features: thermal protection; undervoltage protection Kind of package: reel; tape Supply voltage: 1.8...5.5V DC On-state resistance: 0.15Ω Active logical level: high |
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NTR5198NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23 Mounting: SMD Power dissipation: 0.6W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT23 Drain-source voltage: 60V Drain current: 1.6A On-state resistance: 155mΩ Type of transistor: N-MOSFET |
на замовлення 3262 шт: термін постачання 21-30 дні (днів) |
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NVR5198NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23 Mounting: SMD Application: automotive industry Power dissipation: 0.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 27A Case: SOT23 Drain-source voltage: 60V Drain current: 1.2A On-state resistance: 0.205Ω Type of transistor: N-MOSFET |
на замовлення 1860 шт: термін постачання 21-30 дні (днів) |
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MC74AC240DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; AC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 80µA |
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| MC74AC240DWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: AC |
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FDMA291P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.6A; 2.4W; MicroFET Mounting: SMD Power dissipation: 2.4W Gate charge: 14nC Polarisation: unipolar Technology: PowerTrench® Drain current: -6.6A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: MicroFET On-state resistance: 98mΩ |
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NRVUS1KFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
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FQPF5N40 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.9A; Idm: 12A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced |
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FQPF630 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 4A; Idm: 25.2A; 38W; TO220FP Mounting: THT Case: TO220FP Kind of package: tube Drain-source voltage: 200V Drain current: 4A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 25.2A |
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FQPF70N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24.7A; Idm: 140A; 62W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 24.7A Pulsed drain current: 140A Power dissipation: 62W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 23mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
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MOC3053M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3053M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac; without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 6mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3053M |
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74VHC157M | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 4; SMD; SO16; VHC; 2÷5.5VDC; tube; 40uA Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 4 Mounting: SMD Case: SO16 Manufacturer series: VHC Supply voltage: 2...5.5V DC Kind of package: tube Operating temperature: -40...85°C Quiescent current: 40µA |
на замовлення 57 шт: термін постачання 21-30 дні (днів) |
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74VHC157MTC | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 4; SMD; TSSOP16; VHC; 2÷5.5VDC; tube Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 4 Mounting: SMD Case: TSSOP16 Manufacturer series: VHC Supply voltage: 2...5.5V DC Kind of package: tube Operating temperature: -40...85°C Quiescent current: 40µA |
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74VHC157MTCX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 4; SMD; TSSOP16; VHC; 2÷5.5VDC; 40uA Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 4 Mounting: SMD Case: TSSOP16 Manufacturer series: VHC Supply voltage: 2...5.5V DC Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 40µA |
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MC74VHC157DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 4; CMOS; SMD; SOIC16; VHC; 2÷5.5VDC; VHC Operating temperature: -55...125°C Kind of package: reel; tape Manufacturer series: VHC Technology: CMOS Kind of integrated circuit: multiplexer Family: VHC Mounting: SMD Case: SOIC16 Supply voltage: 2...5.5V DC Type of integrated circuit: digital Number of channels: 4 |
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| MC74VHC157DTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 4; CMOS; SMD; TSSOP16; VHC; 2÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 4 Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: VHC Supply voltage: 2...5.5V DC Family: VHC Kind of package: reel; tape Operating temperature: -55...125°C |
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MMQA33VT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: diode arrays; 33V; 24W; quadruple,common anode; SC74; ±5% Type of diode: diode arrays Breakdown voltage: 33V Peak pulse power dissipation: 24W Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC74 Max. off-state voltage: 25V Features of semiconductor devices: ESD protection Kind of package: reel; tape Tolerance: ±5% |
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SZMMQA33VT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 33V; 0.5A; 24W; quadruple,common anode; SC74 Type of diode: TVS array Breakdown voltage: 33V Max. forward impulse current: 0.5A Peak pulse power dissipation: 24W Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC74 Max. off-state voltage: 25V Features of semiconductor devices: ESD protection Leakage current: 75µA Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
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FDS6574A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8 Polarisation: unipolar Case: SO8 Kind of package: reel; tape Gate charge: 105nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Drain-source voltage: 20V Drain current: 16A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W |
товар відсутній |
| 74VHC273MTCX |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
товар відсутній
| 74VHC273MX |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: SO20-W
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: SO20-W
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
товар відсутній
| MMBZ5245BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 15V; 8.5mA; SMD; reel,tape; SOT23; Ir: 0.1uA
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 15V
Zener current: 8.5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 15V; 8.5mA; SMD; reel,tape; SOT23; Ir: 0.1uA
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 15V
Zener current: 8.5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| SZMMBZ5245BLT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 15V; SMD; reel,tape; SOT23-3; single diode
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23-3
Semiconductor structure: single diode
Leakage current: 0.1µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 15V; SMD; reel,tape; SOT23-3; single diode
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23-3
Semiconductor structure: single diode
Leakage current: 0.1µA
Application: automotive industry
товар відсутній
| MC74VHCT08ADR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHCT
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHCT
товар відсутній
| MC74VHCT08ADTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHCT
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHCT
товар відсутній
| FPF2163 |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN6; reel,tape; -40÷85°C
Mounting: SMD
Supply voltage: 1.8...5.5V DC
On-state resistance: 135mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
Kind of package: reel; tape
Operating temperature: -40...85°C
Case: WDFN6
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN6; reel,tape; -40÷85°C
Mounting: SMD
Supply voltage: 1.8...5.5V DC
On-state resistance: 135mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
Kind of package: reel; tape
Operating temperature: -40...85°C
Case: WDFN6
товар відсутній
| FPF2164 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 150mA÷1.5A; Ch: 1; P-Channel; SMD; MLP6
Mounting: SMD
Supply voltage: 1.8...5.5V DC
On-state resistance: 0.18Ω
Output current: 150mA...1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
Case: MLP6
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 150mA÷1.5A; Ch: 1; P-Channel; SMD; MLP6
Mounting: SMD
Supply voltage: 1.8...5.5V DC
On-state resistance: 0.18Ω
Output current: 150mA...1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
Case: MLP6
товар відсутній
| FPF2165 |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 150mA÷1.5A; Ch: 1; P-Channel; SMD; MLP6
Mounting: SMD
Supply voltage: 1.8...5.5V DC
On-state resistance: 0.18Ω
Output current: 150mA...1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
Case: MLP6
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 150mA÷1.5A; Ch: 1; P-Channel; SMD; MLP6
Mounting: SMD
Supply voltage: 1.8...5.5V DC
On-state resistance: 0.18Ω
Output current: 150mA...1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
Case: MLP6
товар відсутній
| sm05t1g | |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23-3
Type of diode: TVS array
Breakdown voltage: 6.7V
Max. forward impulse current: 17A
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 10µA
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23-3
Type of diode: TVS array
Breakdown voltage: 6.7V
Max. forward impulse current: 17A
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 10µA
Kind of package: reel; tape
на замовлення 5930 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.76 грн |
| 65+ | 5.75 грн |
| 100+ | 4.61 грн |
| 215+ | 3.93 грн |
| 585+ | 3.72 грн |
| FDS5670 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| CM1231-02SO |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 0.225W; SOT23-6; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 6V
Peak pulse power dissipation: 0.225W
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 0.225W; SOT23-6; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 6V
Peak pulse power dissipation: 0.225W
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
на замовлення 745 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 28.38 грн |
| 25+ | 23.74 грн |
| 44+ | 19.46 грн |
| 121+ | 18.37 грн |
| FDMC6686P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -377A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -56A
Pulsed drain current: -377A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -377A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -56A
Pulsed drain current: -377A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDG316P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.6A; 0.75W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.6A
Power dissipation: 0.75W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.6A; 0.75W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.6A
Power dissipation: 0.75W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MOC207M | |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 3.2µs
Turn-off time: 4.7µs
на замовлення 2588 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 66.45 грн |
| 10+ | 39.93 грн |
| 25+ | 27.59 грн |
| 35+ | 24.46 грн |
| 96+ | 23.16 грн |
| 100+ | 22.79 грн |
| 500+ | 22.21 грн |
| MOC207R2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100-200%@10mA
Case: SO8
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100-200%@10mA
Case: SO8
Turn-on time: 3.2µs
Turn-off time: 4.7µs
на замовлення 952 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 53.94 грн |
| 11+ | 34.19 грн |
| 38+ | 23.45 грн |
| 102+ | 22.14 грн |
| 500+ | 21.27 грн |
| MOCD208M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 40-125%@10mA
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 40-125%@10mA
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
товар відсутній
| MOC8204SM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 400V
Mounting: SMD
Case: Gull wing 6
Insulation voltage: 4.17kV
Kind of output: transistor
CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 400V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 400V
Mounting: SMD
Case: Gull wing 6
Insulation voltage: 4.17kV
Kind of output: transistor
CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 400V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 54.73 грн |
| 9+ | 41.67 грн |
| 25+ | 38.19 грн |
| 26+ | 33.39 грн |
| MM3Z20VB |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 20V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 45nA
Max. forward voltage: 1V
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 20V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 45nA
Max. forward voltage: 1V
товар відсутній
| MJ11032G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 30A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 30A
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 30A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 30A
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
товар відсутній
| NSVMMUN2212LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
на замовлення 2565 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.32 грн |
| 90+ | 4.07 грн |
| 100+ | 3.65 грн |
| 295+ | 2.86 грн |
| 810+ | 2.7 грн |
| FL7701MX |
|
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED controller; SO8; 250mA
Case: SO8
Mounting: SMD
Type of integrated circuit: driver
Maximum output current: 0.25A
Integrated circuit features: digitally implemented active power factor correction function; linear dimming
Kind of integrated circuit: LED controller
Category: LED drivers
Description: IC: driver; LED controller; SO8; 250mA
Case: SO8
Mounting: SMD
Type of integrated circuit: driver
Maximum output current: 0.25A
Integrated circuit features: digitally implemented active power factor correction function; linear dimming
Kind of integrated circuit: LED controller
на замовлення 58 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 81.31 грн |
| 6+ | 66.79 грн |
| 15+ | 58.08 грн |
| 41+ | 55.17 грн |
| PZTA92T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
на замовлення 1400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 16.42 грн |
| 35+ | 11.47 грн |
| 95+ | 9.15 грн |
| 255+ | 8.64 грн |
| 1000+ | 8.42 грн |
| MBRS2H100T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 100V
Max. load current: 130A
Max. forward voltage: 0.65V
Load current: 2A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 100V
Max. load current: 130A
Max. forward voltage: 0.65V
Load current: 2A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMB
товар відсутній
| M74VHC1GT50DTT1G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; TTL; SMD; TSOP5; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: TTL
Case: TSOP5
Number of channels: 1
Supply voltage: 2...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; TTL; SMD; TSOP5; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: TTL
Case: TSOP5
Number of channels: 1
Supply voltage: 2...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: VHC
на замовлення 900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 9.93 грн |
| 50+ | 9.07 грн |
| 140+ | 6.24 грн |
| 380+ | 5.88 грн |
| BZX84C20LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
на замовлення 3925 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.16 грн |
| 275+ | 1.41 грн |
| 500+ | 1.26 грн |
| 850+ | 1.02 грн |
| 2325+ | 0.96 грн |
| BZX84C22LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
на замовлення 5850 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.66 грн |
| 250+ | 1.59 грн |
| 500+ | 1.44 грн |
| 750+ | 1.15 грн |
| 2025+ | 1.09 грн |
| MJ11012G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 30A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 30A
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 30A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 30A
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
товар відсутній
| MJ11028G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 50A
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 50A
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
на замовлення 72 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1058.55 грн |
| 3+ | 929.94 грн |
| FDP050AN06A0 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB
Technology: PowerTrench®
Case: TO220AB
Mounting: THT
On-state resistance: 11mΩ
Kind of package: tube
Power dissipation: 245W
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 18A
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB
Technology: PowerTrench®
Case: TO220AB
Mounting: THT
On-state resistance: 11mΩ
Kind of package: tube
Power dissipation: 245W
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 18A
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
| 1N5374BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 75V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 75V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 75V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 75V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній
| MC33172DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
товар відсутній
| ESD5Z7.0T1G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 200W; 7.5V; 8.8A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 7V
Breakdown voltage: 7.5V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 200W; 7.5V; 8.8A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 7V
Breakdown voltage: 7.5V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
на замовлення 2050 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 146+ | 2.69 грн |
| 169+ | 2.15 грн |
| 250+ | 1.74 грн |
| 555+ | 1.54 грн |
| 1525+ | 1.45 грн |
| NC7SP126L6X |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SIP6; TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Number of inputs: 2
Manufacturer series: TinyLogic
Family: NC
Type of integrated circuit: digital
Kind of output: 3-state
Technology: CMOS
Kind of package: reel; tape
Case: SIP6
Kind of integrated circuit: 3-state; buffer
Number of channels: 1
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SIP6; TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Number of inputs: 2
Manufacturer series: TinyLogic
Family: NC
Type of integrated circuit: digital
Kind of output: 3-state
Technology: CMOS
Kind of package: reel; tape
Case: SIP6
Kind of integrated circuit: 3-state; buffer
Number of channels: 1
Mounting: SMD
товар відсутній
| NRVBD650CTT4G-VF01 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3Ax2; DPAK; reel,tape
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Max. off-state voltage: 50V
Application: automotive industry
Max. forward impulse current: 75A
Max. load current: 6A
Load current: 3A x2
Max. forward voltage: 0.9V
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3Ax2; DPAK; reel,tape
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Max. off-state voltage: 50V
Application: automotive industry
Max. forward impulse current: 75A
Max. load current: 6A
Load current: 3A x2
Max. forward voltage: 0.9V
Type of diode: Schottky rectifying
товар відсутній
| NCP5901BDR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
товар відсутній
| NCP5901DR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
товар відсутній
| SBAV70LT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 9.38 грн |
| 74+ | 4.94 грн |
| 102+ | 3.57 грн |
| 118+ | 3.1 грн |
| 280+ | 3.08 грн |
| 770+ | 2.91 грн |
| SBAV70LT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| SBAS16LT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| NB3N551DR2G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS; 3÷5.5VDC; SMD; SO8; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Number of channels: 1
Technology: CMOS
Supply voltage: 3...5.5V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS; 3÷5.5VDC; SMD; SO8; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Number of channels: 1
Technology: CMOS
Supply voltage: 3...5.5V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
товар відсутній
| FPF2103 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; SOT23-5; reel,tape; -40÷125°C
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: SOT23-5
Operating temperature: -40...125°C
Integrated circuit features: thermal protection; undervoltage protection
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
On-state resistance: 0.15Ω
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; SOT23-5; reel,tape; -40÷125°C
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: SOT23-5
Operating temperature: -40...125°C
Integrated circuit features: thermal protection; undervoltage protection
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
On-state resistance: 0.15Ω
Active logical level: high
товар відсутній
| NTR5198NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Mounting: SMD
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.6A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Mounting: SMD
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.6A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
на замовлення 3262 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 24.24 грн |
| 23+ | 15.83 грн |
| 30+ | 12.34 грн |
| 100+ | 8.57 грн |
| 153+ | 5.59 грн |
| 421+ | 5.3 грн |
| 3000+ | 5.08 грн |
| NVR5198NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Mounting: SMD
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.205Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Mounting: SMD
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.205Ω
Type of transistor: N-MOSFET
на замовлення 1860 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 31.27 грн |
| 21+ | 17.35 грн |
| 25+ | 14.88 грн |
| 85+ | 10.09 грн |
| 233+ | 9.51 грн |
| 1000+ | 9.36 грн |
| MC74AC240DTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 80µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 80µA
товар відсутній
| MC74AC240DWR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AC
товар відсутній
| FDMA291P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.6A; 2.4W; MicroFET
Mounting: SMD
Power dissipation: 2.4W
Gate charge: 14nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -6.6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 98mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.6A; 2.4W; MicroFET
Mounting: SMD
Power dissipation: 2.4W
Gate charge: 14nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -6.6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 98mΩ
товар відсутній
| NRVUS1KFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| FQPF5N40 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.9A; Idm: 12A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.9A; Idm: 12A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FQPF630 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4A; Idm: 25.2A; 38W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Drain-source voltage: 200V
Drain current: 4A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 25.2A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4A; Idm: 25.2A; 38W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Drain-source voltage: 200V
Drain current: 4A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 25.2A
товар відсутній
| FQPF70N10 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24.7A; Idm: 140A; 62W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24.7A
Pulsed drain current: 140A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24.7A; Idm: 140A; 62W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24.7A
Pulsed drain current: 140A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| MOC3053M |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3053M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3053M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3053M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3053M
товар відсутній
| 74VHC157M |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; SMD; SO16; VHC; 2÷5.5VDC; tube; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; SMD; SO16; VHC; 2÷5.5VDC; tube; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
на замовлення 57 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 38.07 грн |
| 13+ | 28.31 грн |
| 43+ | 19.82 грн |
| 74VHC157MTC |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; SMD; TSSOP16; VHC; 2÷5.5VDC; tube
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; SMD; TSSOP16; VHC; 2÷5.5VDC; tube
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
товар відсутній
| 74VHC157MTCX |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; SMD; TSSOP16; VHC; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; SMD; TSSOP16; VHC; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
товар відсутній
| MC74VHC157DR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; CMOS; SMD; SOIC16; VHC; 2÷5.5VDC; VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
Kind of integrated circuit: multiplexer
Family: VHC
Mounting: SMD
Case: SOIC16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 4
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; CMOS; SMD; SOIC16; VHC; 2÷5.5VDC; VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
Kind of integrated circuit: multiplexer
Family: VHC
Mounting: SMD
Case: SOIC16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 4
товар відсутній
| MC74VHC157DTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; CMOS; SMD; TSSOP16; VHC; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; CMOS; SMD; TSSOP16; VHC; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній
| MMQA33VT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: diode arrays; 33V; 24W; quadruple,common anode; SC74; ±5%
Type of diode: diode arrays
Breakdown voltage: 33V
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC74
Max. off-state voltage: 25V
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Tolerance: ±5%
Category: Transil diodes - arrays
Description: Diode: diode arrays; 33V; 24W; quadruple,common anode; SC74; ±5%
Type of diode: diode arrays
Breakdown voltage: 33V
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC74
Max. off-state voltage: 25V
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Tolerance: ±5%
товар відсутній
| SZMMQA33VT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 33V; 0.5A; 24W; quadruple,common anode; SC74
Type of diode: TVS array
Breakdown voltage: 33V
Max. forward impulse current: 0.5A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC74
Max. off-state voltage: 25V
Features of semiconductor devices: ESD protection
Leakage current: 75µA
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Category: Transil diodes - arrays
Description: Diode: TVS array; 33V; 0.5A; 24W; quadruple,common anode; SC74
Type of diode: TVS array
Breakdown voltage: 33V
Max. forward impulse current: 0.5A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC74
Max. off-state voltage: 25V
Features of semiconductor devices: ESD protection
Leakage current: 75µA
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
товар відсутній
| FDS6574A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Polarisation: unipolar
Case: SO8
Kind of package: reel; tape
Gate charge: 105nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Drain-source voltage: 20V
Drain current: 16A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Polarisation: unipolar
Case: SO8
Kind of package: reel; tape
Gate charge: 105nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Drain-source voltage: 20V
Drain current: 16A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
товар відсутній