Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MUN5111T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.202W Case: SC70; SOT323 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ кількість в упаковці: 25 шт |
товар відсутній |
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MUN5112DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ кількість в упаковці: 5 шт |
на замовлення 2499 шт: термін постачання 14-21 дні (днів) |
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MUN5113DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 5 шт |
на замовлення 110 шт: термін постачання 14-21 дні (днів) |
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MUN5114DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 5 шт |
на замовлення 135 шт: термін постачання 14-21 дні (днів) |
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MUN5115DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ кількість в упаковці: 5 шт |
товар відсутній |
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MUN5131DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ кількість в упаковці: 5 шт |
на замовлення 780 шт: термін постачання 14-21 дні (днів) |
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MUN5133DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 4.7kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 5 шт |
на замовлення 348 шт: термін постачання 14-21 дні (днів) |
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MUN5135DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.187W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 кількість в упаковці: 5 шт |
товар відсутній |
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MUN5211DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Current gain: 60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ кількість в упаковці: 5 шт |
товар відсутній |
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MUN5211T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Current gain: 60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ кількість в упаковці: 25 шт |
на замовлення 11200 шт: термін постачання 14-21 дні (днів) |
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MUN5213DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Current gain: 140 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 25 шт |
на замовлення 2625 шт: термін постачання 14-21 дні (днів) |
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MUN5213T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Current gain: 140 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 1 шт |
на замовлення 5055 шт: термін постачання 14-21 дні (днів) |
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MUN5214DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 5 шт |
на замовлення 1670 шт: термін постачання 14-21 дні (днів) |
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MUN5215T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.202W Case: SC70; SOT323 Current gain: 160...350 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ кількість в упаковці: 25 шт |
товар відсутній |
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MUN5232DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.385W; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 30 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ кількість в упаковці: 25 шт |
на замовлення 425 шт: термін постачання 14-21 дні (днів) |
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MUN5233DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Current gain: 80...200 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 25 шт |
на замовлення 300 шт: термін постачання 14-21 дні (днів) |
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MUN5233T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Current gain: 200 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 1 шт |
на замовлення 3725 шт: термін постачання 14-21 дні (днів) |
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MUN5235DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Current gain: 140 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 5 шт |
товар відсутній |
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MUN5235T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Current gain: 140 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 1 шт |
товар відсутній |
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MUN5311DW1T1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ кількість в упаковці: 5 шт |
на замовлення 2710 шт: термін постачання 14-21 дні (днів) |
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MUN5312DW1T1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ кількість в упаковці: 5 шт |
на замовлення 375 шт: термін постачання 14-21 дні (днів) |
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MUN5313DW1T1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ кількість в упаковці: 10 шт |
товар відсутній |
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MUN5314DW1T1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 10 шт |
товар відсутній |
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MUN5316DW1T1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Current gain: 160...350 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ кількість в упаковці: 5 шт |
товар відсутній |
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MUN5333DW1T1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Current gain: 80...200 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 25 шт |
товар відсутній |
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MUN5335DW1T1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 1 шт |
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MUR1100ERLG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: CASE59 Max. forward impulse current: 35A Reverse recovery time: 75ns Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
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MUR120RLG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 200V; 1A; bulk; DO41; Ufmax: 0.875V; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.875V Max. load current: 1A Reverse recovery time: 35ns Kind of package: bulk кількість в упаковці: 1 шт |
на замовлення 3620 шт: термін постачання 14-21 дні (днів) |
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MUR1520G | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 200A; TO220-2; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. load current: 30A Max. forward impulse current: 200A Reverse recovery time: 35ns Kind of package: tube Heatsink thickness: 1.14...1.39mm кількість в упаковці: 1 шт |
на замовлення 207 шт: термін постачання 14-21 дні (днів) |
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MUR1540G | ONSEMI |
![]() Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. load current: 30A Max. forward impulse current: 200A Reverse recovery time: 60ns Kind of package: tube Heatsink thickness: 1.14...1.39mm кількість в упаковці: 1 шт |
на замовлення 37 шт: термін постачання 14-21 дні (днів) |
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MUR1560G | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; 1.14÷1.39mm Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220AC Kind of package: tube Heatsink thickness: 1.14...1.39mm кількість в упаковці: 1 шт |
на замовлення 791 шт: термін постачання 14-21 дні (днів) |
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MUR160G | ONSEMI |
![]() Description: Diode: rectifying; THT; 600V; 1A; bulk; DO41; Ufmax: 1.25V; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 1.25V Reverse recovery time: 50ns Kind of package: bulk кількість в упаковці: 1 шт |
на замовлення 932 шт: термін постачання 14-21 дні (днів) |
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MUR160RLG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 600V; 1A; reel; DO41; Ufmax: 1.25V; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 1.25V Reverse recovery time: 50ns Kind of package: reel кількість в упаковці: 1 шт |
на замовлення 1728 шт: термін постачання 14-21 дні (днів) |
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MUR1610CTG | ONSEMI |
![]() Description: Diode: rectifying; THT; 100V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. load current: 16A Max. forward impulse current: 100A Kind of package: tube Heatsink thickness: 1.15...1.39mm кількість в упаковці: 1 шт |
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MUR1615CTG | ONSEMI |
![]() Description: Diode: rectifying; THT; 150V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. load current: 16A Max. forward impulse current: 100A Kind of package: tube Heatsink thickness: 1.15...1.39mm кількість в упаковці: 1 шт |
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MUR1620CTG | ONSEMI |
![]() Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. load current: 16A Max. forward impulse current: 100A Kind of package: tube Heatsink thickness: 1.15...1.39mm кількість в упаковці: 1 шт |
на замовлення 229 шт: термін постачання 14-21 дні (днів) |
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MUR1620CTRG | ONSEMI |
![]() Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common anode; double Case: TO220AB Max. load current: 16A Max. forward impulse current: 100A Kind of package: tube Heatsink thickness: 1.15...1.39mm кількість в упаковці: 1 шт |
на замовлення 76 шт: термін постачання 14-21 дні (днів) |
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MUR1640CTG | ONSEMI |
![]() Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. load current: 16A Max. forward impulse current: 100A Kind of package: tube Heatsink thickness: 1.15...1.39mm кількість в упаковці: 1 шт |
на замовлення 21 шт: термін постачання 14-21 дні (днів) |
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MUR1660CTG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 600V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. load current: 16A Max. forward impulse current: 100A Kind of package: tube Heatsink thickness: 1.15...1.39mm кількість в упаковці: 1 шт |
на замовлення 244 шт: термін постачання 14-21 дні (днів) |
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MUR4100EG | ONSEMI |
![]() Description: Diode: rectifying; THT; 1kV; 4A; bulk; Ifsm: 70A; CASE267-05; 75ns Case: CASE267-05 Max. off-state voltage: 1kV Max. forward voltage: 1.85V Load current: 4A Semiconductor structure: single diode Reverse recovery time: 75ns Max. forward impulse current: 70A Kind of package: bulk Type of diode: rectifying Features of semiconductor devices: ultrafast switching Mounting: THT кількість в упаковці: 1 шт |
на замовлення 985 шт: термін постачання 14-21 дні (днів) |
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MUR4100ERLG | ONSEMI |
![]() Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel Max. forward impulse current: 70A Case: CASE267-05 Max. forward voltage: 1.85V Reverse recovery time: 75ns кількість в упаковці: 1 шт |
на замовлення 2738 шт: термін постачання 14-21 дні (днів) |
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MUR420G | ONSEMI |
![]() Description: Diode: rectifying; THT; 200V; 4A; bulk; Ifsm: 125A; CASE267-05; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: bulk Max. forward impulse current: 125A Case: CASE267-05 Max. forward voltage: 0.89V Reverse recovery time: 25ns кількість в упаковці: 1 шт |
на замовлення 2727 шт: термін постачання 14-21 дні (днів) |
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MUR420RLG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel Max. forward impulse current: 125A Case: CASE267-05 Max. forward voltage: 0.89V Reverse recovery time: 25ns кількість в упаковці: 1 шт |
на замовлення 1480 шт: термін постачання 14-21 дні (днів) |
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mur460rlg | ONSEMI |
![]() Description: Diode: rectifying; THT; 600V; 4A; reel; Ifsm: 110A; CASE267-05; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel Max. forward impulse current: 110A Case: CASE267-05 Max. forward voltage: 1.28V Reverse recovery time: 50ns кількість в упаковці: 1 шт |
на замовлення 1346 шт: термін постачання 14-21 дні (днів) |
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MUR8100EG | ONSEMI |
![]() Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 8A Max. load current: 16A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 1.5V Heatsink thickness: 1.14...1.39mm Reverse recovery time: 100ns кількість в упаковці: 1 шт |
товар відсутній |
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MUR820G | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Max. load current: 16A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 0.975V Heatsink thickness: max. 1.4mm Reverse recovery time: 35ns кількість в упаковці: 1 шт |
на замовлення 936 шт: термін постачання 14-21 дні (днів) |
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MUR860G | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 1.5V Max. load current: 16A Heatsink thickness: 1.14...1.39mm Reverse recovery time: 50ns кількість в упаковці: 1 шт |
на замовлення 188 шт: термін постачання 14-21 дні (днів) |
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MUR880EG | ONSEMI |
![]() Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 100A; TO220AC; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 8A Max. load current: 16A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 1.8V Heatsink thickness: 1.14...1.39mm Reverse recovery time: 100ns кількість в упаковці: 1 шт |
на замовлення 124 шт: термін постачання 14-21 дні (днів) |
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MURA110T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 100V; 1A; 30ns; SMA; Ufmax: 0.875V; Ifsm: 50A Mounting: SMD Case: SMA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 100V Max. forward voltage: 0.875V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 30ns Max. forward impulse current: 50A кількість в упаковці: 5 шт |
на замовлення 4345 шт: термін постачання 14-21 дні (днів) |
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MURA120T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.875V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 0.875V Max. forward impulse current: 40A Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 3430 шт: термін постачання 14-21 дні (днів) |
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MURA160T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.25V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 1.25V Max. forward impulse current: 30A Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 4780 шт: термін постачання 14-21 дні (днів) |
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MURA220T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.95V Case: SMA Kind of package: reel; tape Max. forward impulse current: 40A кількість в упаковці: 5 шт |
товар відсутній |
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MURB1620CTT4G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A x2 Max. load current: 16A Reverse recovery time: 35ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: D2PAK Max. forward voltage: 0.895V Max. forward impulse current: 100A Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
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MURS120T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.875V Max. forward impulse current: 40A Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
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MURS160T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 1.25V Max. forward impulse current: 35A Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
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MURS260T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A Mounting: SMD Load current: 2A Semiconductor structure: single diode Reverse recovery time: 75ns Max. forward impulse current: 35A Kind of package: reel; tape Type of diode: rectifying Case: SMB Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.6kV Max. forward voltage: 1.45V кількість в упаковці: 1 шт |
на замовлення 4500 шт: термін постачання 14-21 дні (днів) |
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MURS320T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 0.89V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 0.89V Max. forward impulse current: 100A Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 2360 шт: термін постачання 14-21 дні (днів) |
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MURS360T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: ultrafast switching Mounting: SMD Case: SMC Max. off-state voltage: 0.6kV Max. forward voltage: 1.28V Load current: 3A Semiconductor structure: single diode Reverse recovery time: 75ns Max. forward impulse current: 100A кількість в упаковці: 1 шт |
на замовлення 1801 шт: термін постачання 14-21 дні (днів) |
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MURS480ET3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A Mounting: SMD Load current: 4A Semiconductor structure: single diode Reverse recovery time: 100ns Max. forward impulse current: 70A Kind of package: reel; tape Type of diode: rectifying Case: SMC Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.8kV Max. forward voltage: 1.53V кількість в упаковці: 1 шт |
товар відсутній |
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N01S818HAT22I | ONSEMI |
![]() Description: IC: SRAM memory; 128kx8bit; 1.7÷2.2V; TSSOP8; -40÷85°C; serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7...2.2V Memory capacity: 1Mb Kind of interface: serial Memory organisation: 128kx8bit Case: TSSOP8 Kind of memory: SRAM Type of integrated circuit: SRAM memory кількість в упаковці: 1 шт |
товар відсутній |
MUN5111T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.202W
Case: SC70; SOT323
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 25 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.202W
Case: SC70; SOT323
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 25 шт
товар відсутній
MUN5112DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
кількість в упаковці: 5 шт
на замовлення 2499 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.45 грн |
100+ | 5.93 грн |
235+ | 4.38 грн |
640+ | 4.15 грн |
MUN5113DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 5 шт
на замовлення 110 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 7.32 грн |
100+ | 3.52 грн |
395+ | 2.58 грн |
1085+ | 2.44 грн |
12000+ | 2.42 грн |
MUN5114DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 5 шт
на замовлення 135 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 7.32 грн |
100+ | 3.43 грн |
405+ | 2.54 грн |
1115+ | 2.4 грн |
MUN5115DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
кількість в упаковці: 5 шт
товар відсутній
MUN5131DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
кількість в упаковці: 5 шт
на замовлення 780 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
55+ | 5.44 грн |
100+ | 3.08 грн |
380+ | 2.7 грн |
500+ | 2.62 грн |
1045+ | 2.55 грн |
3000+ | 2.45 грн |
MUN5133DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 4.7kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 4.7kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 5 шт
на замовлення 348 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
55+ | 5.25 грн |
100+ | 3.08 грн |
380+ | 2.7 грн |
500+ | 2.62 грн |
1045+ | 2.55 грн |
3000+ | 2.45 грн |
MUN5135DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
кількість в упаковці: 5 шт
товар відсутній
MUN5211DW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 5 шт
товар відсутній
MUN5211T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 25 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 25 шт
на замовлення 11200 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
100+ | 2.85 грн |
125+ | 2.49 грн |
500+ | 2.1 грн |
550+ | 1.91 грн |
1475+ | 1.81 грн |
3000+ | 1.77 грн |
12000+ | 1.73 грн |
MUN5213DW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 25 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 25 шт
на замовлення 2625 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 4.13 грн |
100+ | 3.57 грн |
375+ | 2.92 грн |
975+ | 2.76 грн |
3000+ | 2.74 грн |
12000+ | 2.66 грн |
MUN5213T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Current gain: 140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Current gain: 140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 1 шт
на замовлення 5055 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 13.13 грн |
30+ | 9.14 грн |
100+ | 4.7 грн |
500+ | 3.08 грн |
578+ | 1.78 грн |
1588+ | 1.68 грн |
MUN5214DW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 5 шт
на замовлення 1670 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 3.75 грн |
100+ | 3.25 грн |
430+ | 2.4 грн |
1175+ | 2.27 грн |
MUN5215T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.202W
Case: SC70; SOT323
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
кількість в упаковці: 25 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.202W
Case: SC70; SOT323
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
кількість в упаковці: 25 шт
товар відсутній
MUN5232DW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.385W; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
кількість в упаковці: 25 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.385W; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
кількість в упаковці: 25 шт
на замовлення 425 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.25 грн |
100+ | 4.55 грн |
325+ | 3.36 грн |
850+ | 3.18 грн |
12000+ | 3.13 грн |
MUN5233DW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 25 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 25 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 3.9 грн |
100+ | 3.41 грн |
400+ | 2.68 грн |
1075+ | 2.53 грн |
12000+ | 2.43 грн |
MUN5233T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Current gain: 200
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Current gain: 200
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 1 шт
на замовлення 3725 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
78+ | 3.64 грн |
116+ | 2.35 грн |
500+ | 2 грн |
589+ | 1.74 грн |
1619+ | 1.65 грн |
MUN5235DW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Current gain: 140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Current gain: 140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 5 шт
товар відсутній
MUN5235T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Current gain: 140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Current gain: 140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 1 шт
товар відсутній
MUN5311DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 5 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 5 шт
на замовлення 2710 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
30+ | 9.48 грн |
70+ | 4.14 грн |
250+ | 3.61 грн |
360+ | 2.84 грн |
990+ | 2.69 грн |
MUN5312DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
кількість в упаковці: 5 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
кількість в упаковці: 5 шт
на замовлення 375 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 7.79 грн |
80+ | 3.44 грн |
250+ | 2.97 грн |
450+ | 2.28 грн |
1240+ | 2.15 грн |
MUN5313DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
кількість в упаковці: 10 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
кількість в упаковці: 10 шт
товар відсутній
MUN5314DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 10 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 10 шт
товар відсутній
MUN5316DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
кількість в упаковці: 5 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
кількість в упаковці: 5 шт
товар відсутній
MUN5333DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 25 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 25 шт
товар відсутній
MUN5335DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 1 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 1 шт
товар відсутній
MUR1100ERLG | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: CASE59
Max. forward impulse current: 35A
Reverse recovery time: 75ns
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: CASE59
Max. forward impulse current: 35A
Reverse recovery time: 75ns
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
MUR120RLG | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; DO41; Ufmax: 0.875V; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.875V
Max. load current: 1A
Reverse recovery time: 35ns
Kind of package: bulk
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; DO41; Ufmax: 0.875V; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.875V
Max. load current: 1A
Reverse recovery time: 35ns
Kind of package: bulk
кількість в упаковці: 1 шт
на замовлення 3620 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.71 грн |
11+ | 25.33 грн |
12+ | 22.48 грн |
25+ | 18.82 грн |
100+ | 11.24 грн |
127+ | 8.1 грн |
347+ | 7.67 грн |
MUR1520G | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 200A; TO220-2; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. load current: 30A
Max. forward impulse current: 200A
Reverse recovery time: 35ns
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 200A; TO220-2; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. load current: 30A
Max. forward impulse current: 200A
Reverse recovery time: 35ns
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
кількість в упаковці: 1 шт
на замовлення 207 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 95.89 грн |
10+ | 74.92 грн |
16+ | 64.46 грн |
44+ | 60.98 грн |
MUR1540G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. load current: 30A
Max. forward impulse current: 200A
Reverse recovery time: 60ns
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. load current: 30A
Max. forward impulse current: 200A
Reverse recovery time: 60ns
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
кількість в упаковці: 1 шт
на замовлення 37 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 121.02 грн |
10+ | 98.61 грн |
15+ | 67.95 грн |
42+ | 64.46 грн |
500+ | 61.85 грн |
MUR1560G | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; 1.14÷1.39mm
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; 1.14÷1.39mm
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
кількість в упаковці: 1 шт
на замовлення 791 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 98.61 грн |
10+ | 82.76 грн |
14+ | 74.92 грн |
38+ | 70.56 грн |
250+ | 67.95 грн |
MUR160G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; DO41; Ufmax: 1.25V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Kind of package: bulk
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; DO41; Ufmax: 1.25V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Kind of package: bulk
кількість в упаковці: 1 шт
на замовлення 932 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.02 грн |
11+ | 24.7 грн |
13+ | 21.52 грн |
25+ | 14.2 грн |
100+ | 12.46 грн |
105+ | 9.84 грн |
287+ | 9.32 грн |
MUR160RLG | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel; DO41; Ufmax: 1.25V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Kind of package: reel
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel; DO41; Ufmax: 1.25V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Kind of package: reel
кількість в упаковці: 1 шт
на замовлення 1728 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.14 грн |
12+ | 24.15 грн |
14+ | 19.86 грн |
25+ | 15.51 грн |
100+ | 11.67 грн |
125+ | 8.19 грн |
343+ | 7.75 грн |
MUR1610CTG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
кількість в упаковці: 1 шт
товар відсутній
MUR1615CTG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
кількість в упаковці: 1 шт
товар відсутній
MUR1620CTG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
кількість в упаковці: 1 шт
на замовлення 229 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 148.23 грн |
10+ | 123.03 грн |
11+ | 94.08 грн |
31+ | 88.86 грн |
250+ | 85.37 грн |
MUR1620CTRG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common anode; double
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common anode; double
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
кількість в упаковці: 1 шт
на замовлення 76 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 168.87 грн |
3+ | 151.08 грн |
10+ | 110.63 грн |
26+ | 104.54 грн |
250+ | 101.92 грн |
600+ | 101.05 грн |
MUR1640CTG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
кількість в упаковці: 1 шт
на замовлення 21 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 154.8 грн |
10+ | 126.65 грн |
11+ | 99.31 грн |
29+ | 94.08 грн |
250+ | 90.6 грн |
MUR1660CTG | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
кількість в упаковці: 1 шт
на замовлення 244 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 159.49 грн |
10+ | 107.65 грн |
28+ | 97.57 грн |
250+ | 94.08 грн |
MUR4100EG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; bulk; Ifsm: 70A; CASE267-05; 75ns
Case: CASE267-05
Max. off-state voltage: 1kV
Max. forward voltage: 1.85V
Load current: 4A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 70A
Kind of package: bulk
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; bulk; Ifsm: 70A; CASE267-05; 75ns
Case: CASE267-05
Max. off-state voltage: 1kV
Max. forward voltage: 1.85V
Load current: 4A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 70A
Kind of package: bulk
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
кількість в упаковці: 1 шт
на замовлення 985 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 69.66 грн |
10+ | 62.03 грн |
25+ | 52.09 грн |
26+ | 39.81 грн |
71+ | 37.63 грн |
250+ | 37.2 грн |
MUR4100ERLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
кількість в упаковці: 1 шт
на замовлення 2738 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 57.9 грн |
10+ | 51.31 грн |
25+ | 41.73 грн |
36+ | 28.92 грн |
97+ | 27.35 грн |
1000+ | 27.01 грн |
MUR420G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; bulk; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: bulk
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; bulk; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: bulk
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
на замовлення 2727 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 46.41 грн |
10+ | 41.38 грн |
25+ | 35.28 грн |
50+ | 20.38 грн |
136+ | 19.25 грн |
1000+ | 18.56 грн |
MUR420RLG | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
на замовлення 1480 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 40.34 грн |
8+ | 34.65 грн |
10+ | 30.58 грн |
25+ | 27.01 грн |
55+ | 18.56 грн |
149+ | 17.6 грн |
1000+ | 17.34 грн |
mur460rlg |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; reel; Ifsm: 110A; CASE267-05; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 110A
Case: CASE267-05
Max. forward voltage: 1.28V
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; reel; Ifsm: 110A; CASE267-05; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 110A
Case: CASE267-05
Max. forward voltage: 1.28V
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
на замовлення 1346 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 48.78 грн |
7+ | 39.17 грн |
10+ | 31.8 грн |
25+ | 28.66 грн |
45+ | 23.09 грн |
122+ | 21.78 грн |
1000+ | 21.52 грн |
MUR8100EG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.5V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.5V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
товар відсутній
MUR820G | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Heatsink thickness: max. 1.4mm
Reverse recovery time: 35ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Heatsink thickness: max. 1.4mm
Reverse recovery time: 35ns
кількість в упаковці: 1 шт
на замовлення 936 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 77.17 грн |
10+ | 62.55 грн |
24+ | 43.47 грн |
65+ | 41.12 грн |
1000+ | 39.2 грн |
MUR860G | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.5V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.5V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
на замовлення 188 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 97.57 грн |
10+ | 78.16 грн |
20+ | 52.27 грн |
54+ | 49.66 грн |
250+ | 48.78 грн |
500+ | 47.56 грн |
MUR880EG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.8V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.8V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
на замовлення 124 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 95.69 грн |
4+ | 83.23 грн |
10+ | 67.08 грн |
17+ | 60.98 грн |
46+ | 57.5 грн |
MURA110T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 30ns; SMA; Ufmax: 0.875V; Ifsm: 50A
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 100V
Max. forward voltage: 0.875V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 30ns
Max. forward impulse current: 50A
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 30ns; SMA; Ufmax: 0.875V; Ifsm: 50A
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 100V
Max. forward voltage: 0.875V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 30ns
Max. forward impulse current: 50A
кількість в упаковці: 5 шт
на замовлення 4345 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 24.58 грн |
25+ | 16.65 грн |
85+ | 12.22 грн |
230+ | 11.55 грн |
MURA120T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.875V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.875V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 3430 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 21.77 грн |
25+ | 13.03 грн |
100+ | 11.06 грн |
110+ | 9.61 грн |
290+ | 9.09 грн |
MURA160T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 4780 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 25.89 грн |
25+ | 13.39 грн |
100+ | 11.5 грн |
105+ | 9.88 грн |
285+ | 9.34 грн |
MURA220T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.95V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.95V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
кількість в упаковці: 5 шт
товар відсутній
MURB1620CTT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 0.895V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 0.895V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
MURS120T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
MURS160T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
MURS260T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A
Mounting: SMD
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A
Mounting: SMD
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
кількість в упаковці: 1 шт
на замовлення 4500 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 32.84 грн |
10+ | 29.22 грн |
11+ | 24.83 грн |
25+ | 20.82 грн |
69+ | 14.9 грн |
189+ | 14.11 грн |
1000+ | 13.94 грн |
MURS320T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 0.89V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.89V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 0.89V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.89V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 2360 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 24.02 грн |
25+ | 20.81 грн |
70+ | 15.41 грн |
180+ | 14.57 грн |
MURS360T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Case: SMC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.28V
Load current: 3A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 100A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Case: SMC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.28V
Load current: 3A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 100A
кількість в упаковці: 1 шт
на замовлення 1801 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 43.16 грн |
10+ | 39.26 грн |
48+ | 21.54 грн |
131+ | 20.36 грн |
MURS480ET3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Mounting: SMD
Load current: 4A
Semiconductor structure: single diode
Reverse recovery time: 100ns
Max. forward impulse current: 70A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMC
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.53V
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Mounting: SMD
Load current: 4A
Semiconductor structure: single diode
Reverse recovery time: 100ns
Max. forward impulse current: 70A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMC
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.53V
кількість в упаковці: 1 шт
товар відсутній
N01S818HAT22I |
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Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 128kx8bit; 1.7÷2.2V; TSSOP8; -40÷85°C; serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...2.2V
Memory capacity: 1Mb
Kind of interface: serial
Memory organisation: 128kx8bit
Case: TSSOP8
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
кількість в упаковці: 1 шт
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 128kx8bit; 1.7÷2.2V; TSSOP8; -40÷85°C; serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...2.2V
Memory capacity: 1Mb
Kind of interface: serial
Memory organisation: 128kx8bit
Case: TSSOP8
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
кількість в упаковці: 1 шт
товар відсутній