MSCSM120AM042CD3AG Microchip Technology
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 495A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: D3
Part Status: Active
Description: SIC 2N-CH 1200V 495A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: D3
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 65421.64 грн |
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Технічний опис MSCSM120AM042CD3AG Microchip Technology
Description: SIC 2N-CH 1200V 495A D3, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2.031kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 495A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 6mA, Supplier Device Package: D3, Part Status: Active.
Інші пропозиції MSCSM120AM042CD3AG за ціною від 52453.79 грн до 68838.88 грн
Фото | Назва | Виробник | Інформація |
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MSCSM120AM042CD3AG | Виробник : Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-D3 |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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MSCSM120AM042CD3AG | Виробник : Microchip Technology | UNRLS CC7147 |
товар відсутній |
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MSCSM120AM042CD3AG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC Case: D3 Pulsed drain current: 990A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 395A On-state resistance: 5.2mΩ Power dissipation: 2031W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes кількість в упаковці: 1 шт |
товар відсутній |
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MSCSM120AM042CD3AG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC Case: D3 Pulsed drain current: 990A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 395A On-state resistance: 5.2mΩ Power dissipation: 2031W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes |
товар відсутній |