MSCSM120TAM11CTPAG Microchip Technology
Виробник: Microchip Technology
Description: SIC 6N-CH 1200V 251A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP6-P
Part Status: Active
Description: SIC 6N-CH 1200V 251A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP6-P
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 79467.57 грн |
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Технічний опис MSCSM120TAM11CTPAG Microchip Technology
Description: SIC 6N-CH 1200V 251A SP6-P, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.042kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 251A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V, Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V, Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 3mA, Supplier Device Package: SP6-P, Part Status: Active.
Інші пропозиції MSCSM120TAM11CTPAG за ціною від 60749.86 грн до 82557.65 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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MSCSM120TAM11CTPAG | Виробник : Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6P |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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MSCSM120TAM11CTPAG | Виробник : Microchip Technology | Triple Phase Leg Sic Mosfet Power Module |
товар відсутній |
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MSCSM120TAM11CTPAG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB Case: SP6P Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 200A On-state resistance: 10.4mΩ Power dissipation: 1042W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor кількість в упаковці: 1 шт |
товар відсутній |
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MSCSM120TAM11CTPAG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB Case: SP6P Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 200A On-state resistance: 10.4mΩ Power dissipation: 1042W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor |
товар відсутній |