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MSCSM70AM10CT3AG Microchip Technology
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Description: SIC 2N-CH 700V 241A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP3F
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 17810.84 грн |
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Технічний опис MSCSM70AM10CT3AG Microchip Technology
Description: SIC 2N-CH 700V 241A SP3F, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 690W (Tc), Drain to Source Voltage (Vdss): 700V, Current - Continuous Drain (Id) @ 25°C: 241A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V, Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V, Vgs(th) (Max) @ Id: 2.4V @ 8mA, Supplier Device Package: SP3F, Part Status: Active.
Інші пропозиції MSCSM70AM10CT3AG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MSCSM70AM10CT3AG | Виробник : Microchip Technology |
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товар відсутній |
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MSCSM70AM10CT3AG | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 482A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 192A On-state resistance: 9.5mΩ Power dissipation: 690W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
товар відсутній |
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![]() |
MSCSM70AM10CT3AG | Виробник : Microchip Technology |
![]() |
товар відсутній |
|
MSCSM70AM10CT3AG | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 482A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 192A On-state resistance: 9.5mΩ Power dissipation: 690W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
товар відсутній |