APTGT400A120D3G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: D3
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 4 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: D3
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 4 шт
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Технічний опис APTGT400A120D3G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 1200V 580A 2100W D3, Packaging: Bulk, Package / Case: D-3 Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A, NTC Thermistor: No, Supplier Device Package: D3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 580 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 2100 W, Current - Collector Cutoff (Max): 750 µA, Input Capacitance (Cies) @ Vce: 29 nF @ 25 V.
Інші пропозиції APTGT400A120D3G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTGT400A120D3G | Виробник : MICROSEMI |
D3POWER MODULE - IGBT кількість в упаковці: 1 шт |
товар відсутній |
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APTGT400A120D3G | Виробник : Microchip Technology |
Description: IGBT MODULE 1200V 580A 2100W D3 Packaging: Bulk Package / Case: D-3 Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A NTC Thermistor: No Supplier Device Package: D3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 580 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2100 W Current - Collector Cutoff (Max): 750 µA Input Capacitance (Cies) @ Vce: 29 nF @ 25 V |
товар відсутній |
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APTGT400A120D3G | Виробник : Microsemi | IGBT Modules Power Module - IGBT |
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APTGT400A120D3G | Виробник : Microchip Technology | IGBT Modules PM-IGBT-TFS-D3 |
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APTGT400A120D3G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 400A Case: D3 Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |