APTGT30A170T1G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 30A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 70A
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
Case: SP1
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 30A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 70A
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
Case: SP1
кількість в упаковці: 16 шт
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Технічний опис APTGT30A170T1G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 1700V 45A 210W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 210 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V.
Інші пропозиції APTGT30A170T1G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTGT30A170T1G | Виробник : Microchip Technology |
Description: IGBT MODULE 1700V 45A 210W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 210 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
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APTGT30A170T1G | Виробник : Microchip / Microsemi | IGBT Modules DOR CC8030 |
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APTGT30A170T1G | Виробник : Microchip Technology | IGBT Modules DOR CC8030 |
товар відсутній |
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APTGT30A170T1G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 30A Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 70A Application: motors Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge; NTC thermistor Case: SP1 |
товар відсутній |