APTGT300DH60G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 5 шт
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Технічний опис APTGT300DH60G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 600V 430A 1150W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Asymmetrical Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 430 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 1150 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 24 nF @ 25 V.
Інші пропозиції APTGT300DH60G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT300DH60G | Виробник : Microchip Technology |
Description: IGBT MODULE 600V 430A 1150W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Asymmetrical Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 430 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 1150 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 24 nF @ 25 V |
товар відсутній |
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| APTGT300DH60G | Виробник : Microsemi |
IGBT Modules Power Module - IGBT |
товар відсутній |
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| APTGT300DH60G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V Type of module: IGBT Semiconductor structure: diode/transistor Topology: asymmetrical bridge Max. off-state voltage: 0.6kV Collector current: 300A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 500A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |