APTGT300A170D3G MICROCHIP (MICROSEMI)
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Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Field Stop; Trench
Case: D3
Application: motors
Collector current: 300A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 3 шт
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Технічний опис APTGT300A170D3G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 1700V 530A 1470W D3, Packaging: Bulk, Package / Case: D-3 Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A, NTC Thermistor: No, Supplier Device Package: D3, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 530 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1470 W, Current - Collector Cutoff (Max): 8 mA, Input Capacitance (Cies) @ Vce: 26 nF @ 25 V.
Інші пропозиції APTGT300A170D3G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTGT300A170D3G | Виробник : Microchip Technology |
![]() Packaging: Bulk Package / Case: D-3 Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A NTC Thermistor: No Supplier Device Package: D3 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 530 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1470 W Current - Collector Cutoff (Max): 8 mA Input Capacitance (Cies) @ Vce: 26 nF @ 25 V |
товар відсутній |
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APTGT300A170D3G | Виробник : Microsemi |
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товар відсутній |
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APTGT300A170D3G | Виробник : Microchip Technology |
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товар відсутній |
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APTGT300A170D3G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Field Stop; Trench Case: D3 Application: motors Collector current: 300A Pulsed collector current: 600A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT |
товар відсутній |