APT150GN60J Microchip / Microsemi
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
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Технічний опис APT150GN60J Microchip / Microsemi
Description: IGBT MOD 600V 220A 536W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 220 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 536 W, Current - Collector Cutoff (Max): 25 µA, Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V.
Інші пропозиції APT150GN60J
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT150GN60J | Виробник : Microchip Technology | Trans IGBT Module N-CH 600V |
товар відсутній |
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APT150GN60J | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B Case: SOT227B Pulsed collector current: 450A Collector current: 123A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: Field Stop; Trench Max. off-state voltage: 0.6kV Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
товар відсутній |
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APT150GN60J | Виробник : Microchip Technology |
Description: IGBT MOD 600V 220A 536W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 536 W Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V |
товар відсутній |
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APT150GN60J | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B Case: SOT227B Pulsed collector current: 450A Collector current: 123A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: Field Stop; Trench Max. off-state voltage: 0.6kV Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
товар відсутній |