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ICE5QR4770AGXUMA1 ICE5QR4770AGXUMA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
товар відсутній
TC233LP32F200FABKXUMA1 TC233LP32F200FABKXUMA1 Infineon Technologies Infineon-TC23xAC_DS-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-3
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
1+1199.5 грн
10+ 1062.05 грн
25+ 1018 грн
100+ 841.74 грн
250+ 800.43 грн
500+ 748.79 грн
TC233LP32F200NACKXUMA1 TC233LP32F200NACKXUMA1 Infineon Technologies Infineon-TC23xAC_DS-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 1978 шт:
термін постачання 21-31 дні (днів)
1+2631.74 грн
10+ 2337.64 грн
25+ 2232.56 грн
100+ 1873.34 грн
250+ 1787.07 грн
IPD180N10N3GATMA1 IPD180N10N3GATMA1 Infineon Technologies IPD180N10N3_G.pdf Description: MOSFET N-CH 100V 43A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 3505 шт:
термін постачання 21-31 дні (днів)
4+85.46 грн
10+ 67.53 грн
100+ 52.49 грн
500+ 41.75 грн
1000+ 34.01 грн
Мінімальне замовлення: 4
TLE9879EVALKITTOBO1 TLE9879EVALKITTOBO1 Infineon Technologies Infineon-TLE9879-EvalKit-UM-v01_00-EN.pdf?fileId=5546d4624e765da5014eb587aeb53373 Description: EV KIT TLE9879 MOTOR DRIVER
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: TLE9879
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
1+6008.97 грн
FF11MR12W1M1B11BOMA1 FF11MR12W1M1B11BOMA1 Infineon Technologies Infineon-FF11MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c0c327a620aea Description: MOSFET 2N-CH 1200V 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A
Input Capacitance (Ciss) (Max) @ Vds: 7950pF @ 800V
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: Module
Part Status: Obsolete
товар відсутній
FF23MR12W1M1B11BOMA1 FF23MR12W1M1B11BOMA1 Infineon Technologies Infineon-FF23MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c626bf32e23af Description: SIC 2N-CH 1200V 50A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 20mA
Supplier Device Package: Module
на замовлення 249 шт:
термін постачання 21-31 дні (днів)
1+6913.17 грн
24+ 6077.57 грн
48+ 5798.4 грн
96+ 5159.42 грн
IPD80R900P7ATMA1 IPD80R900P7ATMA1 Infineon Technologies Infineon-IPD80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4287da753ee9 Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+38.24 грн
Мінімальне замовлення: 2500
IPD80R360P7ATMA1 IPD80R360P7ATMA1 Infineon Technologies Infineon-IPD80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b425a44e73e94 Description: MOSFET N-CH 800V 13A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товар відсутній
IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 Infineon Technologies Infineon-IPD80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b423eae833e5a Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+26.75 грн
Мінімальне замовлення: 2500
IPD80R3K3P7ATMA1 IPD80R3K3P7ATMA1 Infineon Technologies INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+22.58 грн
5000+ 20.6 грн
Мінімальне замовлення: 2500
IPD80R600P7ATMA1 IPD80R600P7ATMA1 Infineon Technologies Infineon-IPD80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1a9c04e36056 Description: MOSFET N-CH 800V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+46.49 грн
Мінімальне замовлення: 2500
IPD80R1K2P7ATMA1 IPD80R1K2P7ATMA1 Infineon Technologies Infineon-IPD80R1K2P7-DataSheet-v02_02-EN.pdf?fileId=5546d46262475fbe01624864728b3cd0&redirId=136886 Description: MOSFET N-CH 800V 4.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+30.98 грн
Мінімальне замовлення: 2500
IPD80R750P7ATMA1 IPD80R750P7ATMA1 Infineon Technologies Infineon-IPD80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08926648f0 Description: MOSFET N-CH 800V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+43.67 грн
Мінімальне замовлення: 2500
IPD80R2K4P7ATMA1 IPD80R2K4P7ATMA1 Infineon Technologies Infineon-IPD80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce9ed17f348ed Description: MOSFET N-CH 800V 2.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+24.51 грн
Мінімальне замовлення: 2500
IPA80R900P7XKSA1 IPA80R900P7XKSA1 Infineon Technologies Infineon-IPA80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b3e42dd230755 Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 482 шт:
термін постачання 21-31 дні (днів)
4+77.07 грн
50+ 59.58 грн
100+ 47.21 грн
Мінімальне замовлення: 4
IPP80R900P7XKSA1 IPP80R900P7XKSA1 Infineon Technologies Infineon-IPP80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b431a6d634099 Description: MOSFET N-CH 800V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
товар відсутній
IPU80R900P7AKMA1 IPU80R900P7AKMA1 Infineon Technologies Infineon-IPU80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b56a1e55e0153 Description: MOSFET N-CH 800V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
4+95.38 грн
10+ 74.95 грн
100+ 58.28 грн
500+ 46.36 грн
Мінімальне замовлення: 4
IPP80R360P7XKSA1 IPP80R360P7XKSA1 Infineon Technologies Infineon-IPP80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b42ac7c083f53 Description: MOSFET N-CH 800V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товар відсутній
IPW80R360P7XKSA1 IPW80R360P7XKSA1 Infineon Technologies Infineon-IPW80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b56d7ed84018a Description: MOSFET N-CH 800V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
на замовлення 243 шт:
термін постачання 21-31 дні (днів)
2+206.02 грн
30+ 157.51 грн
120+ 135.02 грн
Мінімальне замовлення: 2
IPS80R900P7AKMA1 IPS80R900P7AKMA1 Infineon Technologies Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039 Description: MOSFET N-CH 800V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
товар відсутній
IPU80R2K0P7AKMA1 IPU80R2K0P7AKMA1 Infineon Technologies Infineon-IPU80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b479bed537056 Description: MOSFET N-CH 800V 3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
товар відсутній
IPS80R2K0P7AKMA1 IPS80R2K0P7AKMA1 Infineon Technologies Infineon-IPS80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4737336d6fda Description: MOSFET N-CH 800V 3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
товар відсутній
IPU80R3K3P7AKMA1 IPU80R3K3P7AKMA1 Infineon Technologies Infineon-IPU80R3K3P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c1098872e3e4f Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
товар відсутній
IPA80R1K2P7XKSA1 IPA80R1K2P7XKSA1 Infineon Technologies Infineon-IPA80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1fe6fb044626 Description: MOSFET N-CH 800V 4.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 467 шт:
термін постачання 21-31 дні (днів)
3+103.01 грн
50+ 79.77 грн
100+ 63.21 грн
Мінімальне замовлення: 3
IPP80R1K2P7XKSA1 IPP80R1K2P7XKSA1 Infineon Technologies Infineon-IPP80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c200b9d5d467c Description: MOSFET N-CH 800V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
IPP80R750P7XKSA1 IPP80R750P7XKSA1 Infineon Technologies Infineon-IPP80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08a45848f2 Description: MOSFET N-CH 800V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
3+109.88 грн
Мінімальне замовлення: 3
IPP80R600P7XKSA1 IPP80R600P7XKSA1 Infineon Technologies Infineon-IPP80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c108f62163d06 Description: MOSFET N-CH 800V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
товар відсутній
IPU80R2K4P7AKMA1 IPU80R2K4P7AKMA1 Infineon Technologies Infineon-IPU80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedc9e56d1185 Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 1339 шт:
термін постачання 21-31 дні (днів)
5+66.38 грн
10+ 55.4 грн
100+ 38.32 грн
500+ 30.05 грн
Мінімальне замовлення: 5
IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 Infineon Technologies Infineon-IPU80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c201e1f424685 Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товар відсутній
IPU80R600P7AKMA1 IPU80R600P7AKMA1 Infineon Technologies Infineon-IPU80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c14dce5015c165a8de60455 Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 1456 шт:
термін постачання 21-31 дні (днів)
3+111.4 грн
10+ 88.98 грн
100+ 70.83 грн
500+ 56.24 грн
Мінімальне замовлення: 3
IPS80R2K4P7AKMA1 IPS80R2K4P7AKMA1 Infineon Technologies Infineon-IPS80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ced92d89f1179 Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
товар відсутній
IPS80R1K2P7AKMA1 IPS80R1K2P7AKMA1 Infineon Technologies Infineon-IPS80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c10e1c32f3ed0 Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3-342
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товар відсутній
IPS80R750P7AKMA1 IPS80R750P7AKMA1 Infineon Technologies Infineon-IPS80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedb79d591183 Description: MOSFET N-CH 800V 7A TO251-3
товар відсутній
IPS80R600P7AKMA1 IPS80R600P7AKMA1 Infineon Technologies Infineon-IPS80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1adc12ee6394 Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
товар відсутній
IPD80R900P7ATMA1 IPD80R900P7ATMA1 Infineon Technologies Infineon-IPD80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4287da753ee9 Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 4839 шт:
термін постачання 21-31 дні (днів)
4+92.33 грн
10+ 72.82 грн
100+ 56.65 грн
500+ 45.06 грн
1000+ 36.71 грн
Мінімальне замовлення: 4
IPD80R360P7ATMA1 IPD80R360P7ATMA1 Infineon Technologies Infineon-IPD80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b425a44e73e94 Description: MOSFET N-CH 800V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товар відсутній
IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 Infineon Technologies Infineon-IPD80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b423eae833e5a Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
на замовлення 2567 шт:
термін постачання 21-31 дні (днів)
5+64.86 грн
10+ 50.99 грн
100+ 39.63 грн
500+ 31.52 грн
1000+ 25.68 грн
Мінімальне замовлення: 5
IPD80R3K3P7ATMA1 IPD80R3K3P7ATMA1 Infineon Technologies INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
6+57.99 грн
Мінімальне замовлення: 6
IPD80R600P7ATMA1 IPD80R600P7ATMA1 Infineon Technologies Infineon-IPD80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1a9c04e36056 Description: MOSFET N-CH 800V 8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 4734 шт:
термін постачання 21-31 дні (днів)
3+110.64 грн
10+ 88.61 грн
100+ 70.54 грн
500+ 56.01 грн
1000+ 47.53 грн
Мінімальне замовлення: 3
IPD80R1K2P7ATMA1 IPD80R1K2P7ATMA1 Infineon Technologies Infineon-IPD80R1K2P7-DataSheet-v02_02-EN.pdf?fileId=5546d46262475fbe01624864728b3cd0&redirId=136886 Description: MOSFET N-CH 800V 4.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 14924 шт:
термін постачання 21-31 дні (днів)
4+82.41 грн
10+ 65.1 грн
100+ 50.61 грн
500+ 40.27 грн
1000+ 32.8 грн
Мінімальне замовлення: 4
IPD80R750P7ATMA1 IPD80R750P7ATMA1 Infineon Technologies Infineon-IPD80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08926648f0 Description: MOSFET N-CH 800V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 4144 шт:
термін постачання 21-31 дні (днів)
3+105.3 грн
10+ 83.18 грн
100+ 64.7 грн
500+ 51.47 грн
1000+ 41.92 грн
Мінімальне замовлення: 3
IPD80R2K4P7ATMA1 IPD80R2K4P7ATMA1 Infineon Technologies Infineon-IPD80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce9ed17f348ed Description: MOSFET N-CH 800V 2.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 3151 шт:
термін постачання 21-31 дні (днів)
5+64.86 грн
10+ 53.86 грн
100+ 37.26 грн
500+ 29.22 грн
1000+ 24.87 грн
Мінімальне замовлення: 5
V6114100NSHPSA1 Infineon Technologies Description: CLAMP FOR DISK DEVICES
товар відсутній
V501445S3HPSA1 Infineon Technologies Description: CLAMP DISK DEVICES 42MM HOUSINGS
товар відсутній
V501460MHPSA1 V501460MHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V50..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d7110a909aa Description: CLAMP DISK DEVICES 42MM HOUSINGS
Packaging: Bulk
Color: Natural
Length: 1.929" (49.00mm)
Shape: Rectangular
Type: Mount
Width: 1.811" (46.00mm)
Height: 1.929" (49.00mm)
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+5096.37 грн
5+ 4627.22 грн
V501460NHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V50..N-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d79a2a809b7 Description: CLAMP DISK DEVICES 42MM HOUSINGS
товар відсутній
V7214150MHPSA1 Infineon Technologies Infineon-CLAMP_V72_14_150M-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a401461e1a7d9c1d79 Description: CLAMP DISK DEVICES 58MM HOUSINGS
товар відсутній
V8926120NHPSA1 Infineon Technologies Description: CLAMP DISK DEVICES 75MM HOUSINGS
товар відсутній
V8926170NHPSA1 Infineon Technologies V89.pdf Description: CLAMP DISK DEVICES 75MM HOUSINGS
товар відсутній
V8926400NHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V89-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d9521990b27 Description: CLAMP DISK DEVICES 75MM HOUSINGS
товар відсутній
D1251S45TXPSA1 D1251S45TXPSA1 Infineon Technologies Infineon-D1251S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb6704d13 Description: DIODE GEN PURP 4.5KV 1530A
товар відсутній
D126A45CXPSA1 Infineon Technologies Description: DIODE GEN PURP 4.5KV 200A
товар відсутній
DD81S14KHPSA1 Infineon Technologies Infineon-DD81S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42f726e4b7f Description: DIODE MODULE GP 1400V 96A
товар відсутній
DD81S14KAHPSA1 Infineon Technologies Description: DIODE ARRAY MOD 1000V 150A
товар відсутній
DD81S14KKHPSA1 Infineon Technologies Infineon-DD81S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42f726e4b7f Description: DIODE ARRAY MOD 1000V 150A
товар відсутній
DD1000S33HE3BPSA1 DD1000S33HE3BPSA1 Infineon Technologies Infineon-DD1000S33HE3-DS-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d7605752a7279 Description: DIODE MOD GP 3300V AGIHVB130-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
Current - Reverse Leakage @ Vr: 1000 A @ 1800 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+82770.38 грн
DD500S33HE3BPSA1 DD500S33HE3BPSA1 Infineon Technologies Infineon-DD500S33HE3-DS-v03_02-EN.pdf?fileId=db3a30433784a0400137990501fd2796 Description: DIODE MOD GP 3300V AGIHVB130-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 500 A
товар відсутній
DDB6U104N16RRBOSA1 DDB6U104N16RRBOSA1 Infineon Technologies Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf?fileId=db3a30433e4143bd013e55b8a63a205f Description: DIODE MODULE GP 1600V 25A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 25A (DC)
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1600 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
товар відсутній
DDB6U144N16RBOSA1 DDB6U144N16RBOSA1 Infineon Technologies INFN-S-A0005253095-1.pdf?t.download=true&u=5oefqw Description: DIODE MODULE GP 1600V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+5948.69 грн
ICE5QR4770AGXUMA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR4770AGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
товар відсутній
TC233LP32F200FABKXUMA1 Infineon-TC23xAC_DS-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee
TC233LP32F200FABKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-3
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1199.5 грн
10+ 1062.05 грн
25+ 1018 грн
100+ 841.74 грн
250+ 800.43 грн
500+ 748.79 грн
TC233LP32F200NACKXUMA1 Infineon-TC23xAC_DS-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee
TC233LP32F200NACKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 1978 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2631.74 грн
10+ 2337.64 грн
25+ 2232.56 грн
100+ 1873.34 грн
250+ 1787.07 грн
IPD180N10N3GATMA1 IPD180N10N3_G.pdf
IPD180N10N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 43A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 3505 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+85.46 грн
10+ 67.53 грн
100+ 52.49 грн
500+ 41.75 грн
1000+ 34.01 грн
Мінімальне замовлення: 4
TLE9879EVALKITTOBO1 Infineon-TLE9879-EvalKit-UM-v01_00-EN.pdf?fileId=5546d4624e765da5014eb587aeb53373
TLE9879EVALKITTOBO1
Виробник: Infineon Technologies
Description: EV KIT TLE9879 MOTOR DRIVER
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: TLE9879
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+6008.97 грн
FF11MR12W1M1B11BOMA1 Infineon-FF11MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c0c327a620aea
FF11MR12W1M1B11BOMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A
Input Capacitance (Ciss) (Max) @ Vds: 7950pF @ 800V
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: Module
Part Status: Obsolete
товар відсутній
FF23MR12W1M1B11BOMA1 Infineon-FF23MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c626bf32e23af
FF23MR12W1M1B11BOMA1
Виробник: Infineon Technologies
Description: SIC 2N-CH 1200V 50A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 20mA
Supplier Device Package: Module
на замовлення 249 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+6913.17 грн
24+ 6077.57 грн
48+ 5798.4 грн
96+ 5159.42 грн
IPD80R900P7ATMA1 Infineon-IPD80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4287da753ee9
IPD80R900P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+38.24 грн
Мінімальне замовлення: 2500
IPD80R360P7ATMA1 Infineon-IPD80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b425a44e73e94
IPD80R360P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 13A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товар відсутній
IPD80R2K0P7ATMA1 Infineon-IPD80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b423eae833e5a
IPD80R2K0P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+26.75 грн
Мінімальне замовлення: 2500
IPD80R3K3P7ATMA1 INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw
IPD80R3K3P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+22.58 грн
5000+ 20.6 грн
Мінімальне замовлення: 2500
IPD80R600P7ATMA1 Infineon-IPD80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1a9c04e36056
IPD80R600P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+46.49 грн
Мінімальне замовлення: 2500
IPD80R1K2P7ATMA1 Infineon-IPD80R1K2P7-DataSheet-v02_02-EN.pdf?fileId=5546d46262475fbe01624864728b3cd0&redirId=136886
IPD80R1K2P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+30.98 грн
Мінімальне замовлення: 2500
IPD80R750P7ATMA1 Infineon-IPD80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08926648f0
IPD80R750P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+43.67 грн
Мінімальне замовлення: 2500
IPD80R2K4P7ATMA1 Infineon-IPD80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce9ed17f348ed
IPD80R2K4P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+24.51 грн
Мінімальне замовлення: 2500
IPA80R900P7XKSA1 Infineon-IPA80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b3e42dd230755
IPA80R900P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 482 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+77.07 грн
50+ 59.58 грн
100+ 47.21 грн
Мінімальне замовлення: 4
IPP80R900P7XKSA1 Infineon-IPP80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b431a6d634099
IPP80R900P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
товар відсутній
IPU80R900P7AKMA1 Infineon-IPU80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b56a1e55e0153
IPU80R900P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+95.38 грн
10+ 74.95 грн
100+ 58.28 грн
500+ 46.36 грн
Мінімальне замовлення: 4
IPP80R360P7XKSA1 Infineon-IPP80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b42ac7c083f53
IPP80R360P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товар відсутній
IPW80R360P7XKSA1 Infineon-IPW80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b56d7ed84018a
IPW80R360P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
на замовлення 243 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+206.02 грн
30+ 157.51 грн
120+ 135.02 грн
Мінімальне замовлення: 2
IPS80R900P7AKMA1 Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039
IPS80R900P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
товар відсутній
IPU80R2K0P7AKMA1 Infineon-IPU80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b479bed537056
IPU80R2K0P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
товар відсутній
IPS80R2K0P7AKMA1 Infineon-IPS80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4737336d6fda
IPS80R2K0P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
товар відсутній
IPU80R3K3P7AKMA1 Infineon-IPU80R3K3P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c1098872e3e4f
IPU80R3K3P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
товар відсутній
IPA80R1K2P7XKSA1 Infineon-IPA80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1fe6fb044626
IPA80R1K2P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 467 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+103.01 грн
50+ 79.77 грн
100+ 63.21 грн
Мінімальне замовлення: 3
IPP80R1K2P7XKSA1 Infineon-IPP80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c200b9d5d467c
IPP80R1K2P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
IPP80R750P7XKSA1 Infineon-IPP80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08a45848f2
IPP80R750P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+109.88 грн
Мінімальне замовлення: 3
IPP80R600P7XKSA1 Infineon-IPP80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c108f62163d06
IPP80R600P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
товар відсутній
IPU80R2K4P7AKMA1 Infineon-IPU80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedc9e56d1185
IPU80R2K4P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 1339 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+66.38 грн
10+ 55.4 грн
100+ 38.32 грн
500+ 30.05 грн
Мінімальне замовлення: 5
IPU80R1K2P7AKMA1 Infineon-IPU80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c201e1f424685
IPU80R1K2P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товар відсутній
IPU80R600P7AKMA1 Infineon-IPU80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c14dce5015c165a8de60455
IPU80R600P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 1456 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+111.4 грн
10+ 88.98 грн
100+ 70.83 грн
500+ 56.24 грн
Мінімальне замовлення: 3
IPS80R2K4P7AKMA1 Infineon-IPS80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ced92d89f1179
IPS80R2K4P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
товар відсутній
IPS80R1K2P7AKMA1 Infineon-IPS80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c10e1c32f3ed0
IPS80R1K2P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3-342
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товар відсутній
IPS80R750P7AKMA1 Infineon-IPS80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedb79d591183
IPS80R750P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO251-3
товар відсутній
IPS80R600P7AKMA1 Infineon-IPS80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1adc12ee6394
IPS80R600P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
товар відсутній
IPD80R900P7ATMA1 Infineon-IPD80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4287da753ee9
IPD80R900P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 4839 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+92.33 грн
10+ 72.82 грн
100+ 56.65 грн
500+ 45.06 грн
1000+ 36.71 грн
Мінімальне замовлення: 4
IPD80R360P7ATMA1 Infineon-IPD80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b425a44e73e94
IPD80R360P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товар відсутній
IPD80R2K0P7ATMA1 Infineon-IPD80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b423eae833e5a
IPD80R2K0P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
на замовлення 2567 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+64.86 грн
10+ 50.99 грн
100+ 39.63 грн
500+ 31.52 грн
1000+ 25.68 грн
Мінімальне замовлення: 5
IPD80R3K3P7ATMA1 INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw
IPD80R3K3P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+57.99 грн
Мінімальне замовлення: 6
IPD80R600P7ATMA1 Infineon-IPD80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1a9c04e36056
IPD80R600P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 4734 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+110.64 грн
10+ 88.61 грн
100+ 70.54 грн
500+ 56.01 грн
1000+ 47.53 грн
Мінімальне замовлення: 3
IPD80R1K2P7ATMA1 Infineon-IPD80R1K2P7-DataSheet-v02_02-EN.pdf?fileId=5546d46262475fbe01624864728b3cd0&redirId=136886
IPD80R1K2P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 14924 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+82.41 грн
10+ 65.1 грн
100+ 50.61 грн
500+ 40.27 грн
1000+ 32.8 грн
Мінімальне замовлення: 4
IPD80R750P7ATMA1 Infineon-IPD80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08926648f0
IPD80R750P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 4144 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+105.3 грн
10+ 83.18 грн
100+ 64.7 грн
500+ 51.47 грн
1000+ 41.92 грн
Мінімальне замовлення: 3
IPD80R2K4P7ATMA1 Infineon-IPD80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce9ed17f348ed
IPD80R2K4P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 3151 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+64.86 грн
10+ 53.86 грн
100+ 37.26 грн
500+ 29.22 грн
1000+ 24.87 грн
Мінімальне замовлення: 5
V6114100NSHPSA1
Виробник: Infineon Technologies
Description: CLAMP FOR DISK DEVICES
товар відсутній
V501445S3HPSA1
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
товар відсутній
V501460MHPSA1 Infineon-Clamp_for_disc_devices_V50..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d7110a909aa
V501460MHPSA1
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
Packaging: Bulk
Color: Natural
Length: 1.929" (49.00mm)
Shape: Rectangular
Type: Mount
Width: 1.811" (46.00mm)
Height: 1.929" (49.00mm)
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+5096.37 грн
5+ 4627.22 грн
V501460NHPSA1 Infineon-Clamp_for_disc_devices_V50..N-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d79a2a809b7
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
товар відсутній
V7214150MHPSA1 Infineon-CLAMP_V72_14_150M-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a401461e1a7d9c1d79
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 58MM HOUSINGS
товар відсутній
V8926120NHPSA1
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 75MM HOUSINGS
товар відсутній
V8926170NHPSA1 V89.pdf
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 75MM HOUSINGS
товар відсутній
V8926400NHPSA1 Infineon-Clamp_for_disc_devices_V89-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d9521990b27
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 75MM HOUSINGS
товар відсутній
D1251S45TXPSA1 Infineon-D1251S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb6704d13
D1251S45TXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 1530A
товар відсутній
D126A45CXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 200A
товар відсутній
DD81S14KHPSA1 Infineon-DD81S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42f726e4b7f
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1400V 96A
товар відсутній
DD81S14KAHPSA1
Виробник: Infineon Technologies
Description: DIODE ARRAY MOD 1000V 150A
товар відсутній
DD81S14KKHPSA1 Infineon-DD81S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42f726e4b7f
Виробник: Infineon Technologies
Description: DIODE ARRAY MOD 1000V 150A
товар відсутній
DD1000S33HE3BPSA1 Infineon-DD1000S33HE3-DS-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d7605752a7279
DD1000S33HE3BPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 3300V AGIHVB130-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
Current - Reverse Leakage @ Vr: 1000 A @ 1800 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+82770.38 грн
DD500S33HE3BPSA1 Infineon-DD500S33HE3-DS-v03_02-EN.pdf?fileId=db3a30433784a0400137990501fd2796
DD500S33HE3BPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 3300V AGIHVB130-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 500 A
товар відсутній
DDB6U104N16RRBOSA1 Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf?fileId=db3a30433e4143bd013e55b8a63a205f
DDB6U104N16RRBOSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1600V 25A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 25A (DC)
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1600 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
товар відсутній
DDB6U144N16RBOSA1 INFN-S-A0005253095-1.pdf?t.download=true&u=5oefqw
DDB6U144N16RBOSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1600V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+5948.69 грн
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