Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136453) > Сторінка 303 з 2275
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FS150R12KT4B11BOSA1 | Infineon Technologies |
 Description: IGBT MOD 1200V 150A 750WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 750 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V |
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FS150R12PT4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 200A 680W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 680 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V |
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F3L200R12W2H3B11BPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 100A 600W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 600 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 11.5 nF @ 25 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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DF300R12KE3HOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 480A 1470W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A NTC Thermistor: No Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 480 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1470 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 21 nF @ 25 V |
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F3L300R07PE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 650V 300A 940W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 940 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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| FF400R12KT3EHOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 580A 2000W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module Part Status: Not For New Designs Current - Collector (Ic) (Max): 580 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
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F3L400R07ME4B22BOSA1 | Infineon Technologies |
Description: IGBT MOD 650V 450A 1150W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 1150 W Input Capacitance (Cies) @ Vce: 26 nF @ 25 V |
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FD400R12KE3HOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 580A 2000W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 580 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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FD400R33KF2CNOSA1 | Infineon Technologies |
Description: IGBT MOD 3300V 660A 4800W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 660 A Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 4800 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 50 nF @ 25 V |
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FD400R33KF2CKNOSA1 | Infineon Technologies |
Description: IGBT MOD 3300V 660A 4800W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 660 A Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 4800 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 50 nF @ 25 V |
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| DF900R12IP4DBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 900A 5100W |
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DF900R12IP4DVBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 900A 5100W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 5100 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
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| D121K18BXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 1.8KV 210A |
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| D121N12BXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 230A |
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| D121N16BXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 1.6KV 230A |
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| D1030N26TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 2.6KV 1030A |
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D2450N07TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 700V 2450A |
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| D3501N40TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 4KV 4870A |
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D255N06BXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 255A Packaging: Bulk Package / Case: DO-205AA, DO-8, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 255A Operating Temperature - Junction: -40°C ~ 180°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 20 mA @ 600 V |
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| D3001N58TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 5.8KV 3910A |
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| D3001N60T | Infineon Technologies |
Description: DIODE GEN PURP 6KV 3910A |
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| D3001N65T | Infineon Technologies |
Description: DIODE GEN PURP 6.5KV 3910A |
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| D3001N68TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 6.8KV 3910A |
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| D3041N60TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 6KV 4090A |
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| D801S45T | Infineon Technologies |
Description: DIODE GEN PURP 4.5KV 1570A |
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| D170S25CXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 2.5KV 255A |
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D170U25CXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 2.5KV 210A Packaging: Bulk Package / Case: DO-205AA, DO-8, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 210A Operating Temperature - Junction: -40°C ~ 140°C Voltage - DC Reverse (Vr) (Max): 2500 V Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 650 A Current - Reverse Leakage @ Vr: 5 mA @ 2500 V |
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D1821SH45TPRXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 4.5KV 2210A |
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| DD61S14KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1400V 76A |
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| DD61S14KKHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1400V 76A |
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| DD89N14KKHPSA1 | Infineon Technologies |
Description: DIODE ARRAY MOD 1200V 140A Packaging: Bulk Package / Case: POW-R-BLOK™ Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 89A Supplier Device Package: POW-R-BLOK™ Module Operating Temperature - Junction: 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A Current - Reverse Leakage @ Vr: 20 mA @ 1400 V |
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DD89N16KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1600V 89A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 89A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A Current - Reverse Leakage @ Vr: 20 mA @ 1600 V |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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| DD98N22KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 2200V 98A |
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| DD241S14KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1400V 240A |
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| DD241S14KAHPSA1 | Infineon Technologies |
Description: DIODE ARRAY MOD 1200V 410A |
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| DD241S14KKHPSA1 | Infineon Technologies |
Description: DIODE ARRAY MOD 1200V 410A |
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DD350N18KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1800V 350A |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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DD600N14KHPSA2 | Infineon Technologies |
Description: DIODE MODULE GP 1400V 600A |
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DD180N16SHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1.6KV 192A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 192A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A Current - Reverse Leakage @ Vr: 1 mA @ 1600 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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DZ540N20KHPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 2KV 732A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 732A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A Current - Reverse Leakage @ Vr: 40 mA @ 2000 V |
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DD540N26KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 2600V 540A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 540A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2600 V Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1700 A Current - Reverse Leakage @ Vr: 40 mA @ 2600 V |
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TZ740N20KOFHPSA3 | Infineon Technologies |
Description: SCR MODULE 2KV 1500A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 500 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 819 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 1500 A Voltage - Off State: 2 kV |
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| TT61N12KOFB2HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.2KV 120A MODULE |
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TT162N16KOFAHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 260A MODULE |
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TT280N16SOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 520A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 280 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 520 A Voltage - Off State: 1.6 kV |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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| TDB6HK180N16RRB48BPSA1 | Infineon Technologies |
Description: SCR MODULE VDRM 1600V 70A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter with Brake Operating Temperature: 175°C (TJ) Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Current - Hold (Ih) (Max): 220 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Gate Trigger (Vgt) (Max): 2 V NTC Thermistor: No Supplier Device Package: AG-ECONO2B Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 515 W Voltage - Off State: 1.6 kV Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V |
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TT210N16KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 261 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Voltage - Off State: 1.6 kV |
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TZ425N08KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 800V 800A MODULE |
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| TZ425N12KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.2KV 800A MODULE |
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| TZ425N14KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.4KV 800A MODULE |
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| TZ425N18KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV 800A MODULE |
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TT215N20KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE VDRM 2KV 410A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 215 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Voltage - Off State: 2 kV |
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TZ240N30KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 3KV 700A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 240 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 3 kV |
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| DT61N16KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 120A MODULE |
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| DT92N12KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE VDRM 1200V 160A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 130°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 104 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.2 kV |
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| DT92N14KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE VDRM 1200V 160A |
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| DT92N16KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 160A MODULE |
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| DT92N2014KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE VDRM 1200V 160A |
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| DT92N2516KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE VDRM 1200V 160A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 130°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 104 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 2.5 kV |
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| DT250N2014KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.4KV MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 250 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Voltage - Off State: 1.4 kV |
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| FS150R12KT4B11BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 150A 750W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Description: IGBT MOD 1200V 150A 750W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
товар відсутній
| FS150R12PT4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 200A 680W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Description: IGBT MOD 1200V 200A 680W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
товар відсутній
| F3L200R12W2H3B11BPSA1 |
|
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 11.5 nF @ 25 V
Description: IGBT MOD 1200V 100A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 11.5 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8343.12 грн |
| DF300R12KE3HOSA1 |
|
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 480A 1470W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1470 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
Description: IGBT MOD 1200V 480A 1470W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1470 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
товар відсутній
| F3L300R07PE4BOSA1 |
|
Виробник: Infineon Technologies
Description: IGBT MOD 650V 300A 940W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Description: IGBT MOD 650V 300A 940W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17182.21 грн |
| FF400R12KT3EHOSA1 |
|
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Description: IGBT MOD 1200V 580A 2000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
товар відсутній
| F3L400R07ME4B22BOSA1 |
|
Виробник: Infineon Technologies
Description: IGBT MOD 650V 450A 1150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Description: IGBT MOD 650V 450A 1150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
товар відсутній
| FD400R12KE3HOSA1 |
|
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Description: IGBT MOD 1200V 580A 2000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13604.3 грн |
| 10+ | 12270.06 грн |
| FD400R33KF2CNOSA1 |
|
Виробник: Infineon Technologies
Description: IGBT MOD 3300V 660A 4800W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 660 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 4800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 50 nF @ 25 V
Description: IGBT MOD 3300V 660A 4800W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 660 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 4800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 50 nF @ 25 V
товар відсутній
| FD400R33KF2CKNOSA1 |
|
Виробник: Infineon Technologies
Description: IGBT MOD 3300V 660A 4800W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 660 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 4800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 50 nF @ 25 V
Description: IGBT MOD 3300V 660A 4800W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 660 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 4800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 50 nF @ 25 V
товар відсутній
| DF900R12IP4DBOSA1 |
|
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Description: IGBT MOD 1200V 900A 5100W
товар відсутній
| DF900R12IP4DVBOSA1 |
|
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
товар відсутній
| D1030N26TXPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 2.6KV 1030A
Description: DIODE GEN PURP 2.6KV 1030A
товар відсутній
| D2450N07TXPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 700V 2450A
Description: DIODE GEN PURP 700V 2450A
товар відсутній
| D255N06BXPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 255A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 255A
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
Description: DIODE GEN PURP 600V 255A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 255A
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
товар відсутній
| D3001N58TXPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 5.8KV 3910A
Description: DIODE GEN PURP 5.8KV 3910A
товар відсутній
| D3001N68TXPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 6.8KV 3910A
Description: DIODE GEN PURP 6.8KV 3910A
товар відсутній
| D170U25CXPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 2.5KV 210A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 210A
Operating Temperature - Junction: -40°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 650 A
Current - Reverse Leakage @ Vr: 5 mA @ 2500 V
Description: DIODE GEN PURP 2.5KV 210A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 210A
Operating Temperature - Junction: -40°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 650 A
Current - Reverse Leakage @ Vr: 5 mA @ 2500 V
товар відсутній
| D1821SH45TPRXPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 2210A
Description: DIODE GEN PURP 4.5KV 2210A
товар відсутній
| DD61S14KKHPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1400V 76A
Description: DIODE MODULE GP 1400V 76A
товар відсутній
| DD89N14KKHPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE ARRAY MOD 1200V 140A
Packaging: Bulk
Package / Case: POW-R-BLOK™ Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 89A
Supplier Device Package: POW-R-BLOK™ Module
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
Description: DIODE ARRAY MOD 1200V 140A
Packaging: Bulk
Package / Case: POW-R-BLOK™ Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 89A
Supplier Device Package: POW-R-BLOK™ Module
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
товар відсутній
| DD89N16KHPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1600V 89A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 89A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
Description: DIODE MODULE GP 1600V 89A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 89A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
на замовлення 54 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8378.98 грн |
| 15+ | 7469.07 грн |
| 30+ | 7196.46 грн |
| DD241S14KHPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1400V 240A
Description: DIODE MODULE GP 1400V 240A
товар відсутній
| DD241S14KAHPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE ARRAY MOD 1200V 410A
Description: DIODE ARRAY MOD 1200V 410A
товар відсутній
| DD241S14KKHPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE ARRAY MOD 1200V 410A
Description: DIODE ARRAY MOD 1200V 410A
товар відсутній
| DD350N18KHPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1800V 350A
Description: DIODE MODULE GP 1800V 350A
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 16261.98 грн |
| DD600N14KHPSA2 |
|
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1400V 600A
Description: DIODE MODULE GP 1400V 600A
товар відсутній
| DD180N16SHPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1.6KV 192A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 192A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
Description: DIODE MODULE GP 1.6KV 192A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 192A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3558.83 грн |
| DZ540N20KHPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 2KV 732A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 732A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 2000 V
Description: DIODE GEN PURP 2KV 732A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 732A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 2000 V
товар відсутній
| DD540N26KHPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE MODULE GP 2600V 540A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 540A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1700 A
Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
Description: DIODE MODULE GP 2600V 540A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 540A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1700 A
Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
товар відсутній
| TZ740N20KOFHPSA3 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 2KV 1500A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2 kV
Description: SCR MODULE 2KV 1500A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2 kV
товар відсутній
| TT61N12KOFB2HPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV 120A MODULE
Description: SCR MODULE 1.2KV 120A MODULE
товар відсутній
| TT162N16KOFAHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 260A MODULE
Description: SCR MODULE 1.6KV 260A MODULE
товар відсутній
| TT280N16SOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 520A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 280 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 520A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 280 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6841.45 грн |
| TDB6HK180N16RRB48BPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE VDRM 1600V 70A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter with Brake
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Voltage - Off State: 1.6 kV
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Description: SCR MODULE VDRM 1600V 70A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter with Brake
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Voltage - Off State: 1.6 kV
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
товар відсутній
| TT210N16KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Voltage - Off State: 1.6 kV
товар відсутній
| TZ425N08KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 800V 800A MODULE
Description: SCR MODULE 800V 800A MODULE
товар відсутній
| TZ425N12KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV 800A MODULE
Description: SCR MODULE 1.2KV 800A MODULE
товар відсутній
| TZ425N14KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 800A MODULE
Description: SCR MODULE 1.4KV 800A MODULE
товар відсутній
| TZ425N18KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 800A MODULE
Description: SCR MODULE 1.8KV 800A MODULE
товар відсутній
| TT215N20KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE VDRM 2KV 410A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 215 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Voltage - Off State: 2 kV
Description: SCR MODULE VDRM 2KV 410A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 215 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Voltage - Off State: 2 kV
товар відсутній
| TZ240N30KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 3KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 240 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 3 kV
Description: SCR MODULE 3KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 240 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 3 kV
товар відсутній
| DT61N16KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 120A MODULE
Description: SCR MODULE 1.6KV 120A MODULE
товар відсутній
| DT92N12KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE VDRM 1200V 160A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
Description: SCR MODULE VDRM 1200V 160A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
товар відсутній
| DT92N14KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE VDRM 1200V 160A
Description: SCR MODULE VDRM 1200V 160A
товар відсутній
| DT92N16KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 160A MODULE
Description: SCR MODULE 1.6KV 160A MODULE
товар відсутній
| DT92N2014KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE VDRM 1200V 160A
Description: SCR MODULE VDRM 1200V 160A
товар відсутній
| DT92N2516KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE VDRM 1200V 160A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 2.5 kV
Description: SCR MODULE VDRM 1200V 160A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 2.5 kV
товар відсутній
| DT250N2014KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Voltage - Off State: 1.4 kV
Description: SCR MODULE 1.4KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Voltage - Off State: 1.4 kV
товар відсутній