Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (140089) > Сторінка 2323 з 2335

Обрати Сторінку:   [  << Попередня Сторінка ]  1 233 466 699 932 1165 1398 1631 1864 2097 2318 2319 2320 2321 2322 2323 2324 2325 2326 2327 2328 2330 2335  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
IRLMS1503TRPBF IRLMS1503TRPBF INFINEON TECHNOLOGIES irlms1503pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товару немає в наявності
IRLMS6702TRPBF IRLMS6702TRPBF INFINEON TECHNOLOGIES irlms6702pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товару немає в наявності
IRFSL4010PBF IRFSL4010PBF INFINEON TECHNOLOGIES irfs4010pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
IRGSL4062DPBF IRGSL4062DPBF INFINEON TECHNOLOGIES irgs4062dpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
AUIRGSL4062D1 AUIRGSL4062D1 INFINEON TECHNOLOGIES AUIRGx4062D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 39A
Power dissipation: 123W
Case: TO262
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 176ns
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
2+328.02 грн
3+ 284.62 грн
4+ 271.32 грн
9+ 256.53 грн
Мінімальне замовлення: 2
IRS2104SPBF IRS2104SPBF INFINEON TECHNOLOGIES irs2104.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
на замовлення 141 шт:
термін постачання 21-30 дні (днів)
4+101.11 грн
5+ 89.45 грн
13+ 70.97 грн
34+ 66.54 грн
Мінімальне замовлення: 4
STT2200N18P55XPSA1 INFINEON TECHNOLOGIES STT2200N18P55.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.8kV; 2.18kA; BG-PS55-1; Ufmax: 1.38V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.8kV
Load current: 2.18kA
Case: BG-PS55-1
Max. forward voltage: 1.38V
Max. forward impulse current: 17.5kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
SGB02N120 SGB02N120 INFINEON TECHNOLOGIES SGB02N120.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.8A; 62W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.8A
Power dissipation: 62W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.6A
Mounting: SMD
Kind of package: reel
Turn-on time: 40ns
Turn-off time: 375ns
товару немає в наявності
TD330N16KOFHPSA2 TD330N16KOFHPSA2 INFINEON TECHNOLOGIES TD330N16KOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 330A
Mechanical mounting: screw
товару немає в наявності
TLD22522EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995 InfineonTLD22522EPDataSheetv0100EN.pdf Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-TSDSO-14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-TSDSO-14
Output current: 60...120mA
Number of channels: 2
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
товару немає в наявності
TT570N16KOFHPSA2 TT570N16KOFHPSA2 INFINEON TECHNOLOGIES TT570N16KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товару немає в наявності
IRF7726TRPBF IRF7726TRPBF INFINEON TECHNOLOGIES irf7726pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.79W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.79W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
BCR583E6327HTSA1 BCR583E6327HTSA1 INFINEON TECHNOLOGIES bcr583.pdf_folderid=db3a30431428a373011440769fd70304&fileid=db3a30431428a3730114408538a1030f.pdf bcr583.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114408538a1030f Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: PNP
Collector current: 0.5A
Collector-emitter voltage: 50V
Frequency: 150MHz
Case: SOT23
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товару немає в наявності
BSC0902NSATMA1 BSC0902NSATMA1 INFINEON TECHNOLOGIES BSC0902NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 91A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 48W
товару немає в наявності
BSC0909NSATMA1 BSC0909NSATMA1 INFINEON TECHNOLOGIES BSC0909NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 34V
Drain current: 44A
On-state resistance: 9.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 27W
на замовлення 639 шт:
термін постачання 21-30 дні (днів)
19+21.74 грн
25+ 17.82 грн
54+ 16.12 грн
100+ 16.04 грн
147+ 15.23 грн
250+ 14.93 грн
Мінімальне замовлення: 19
BSC097N06NSATMA1 BSC097N06NSATMA1 INFINEON TECHNOLOGIES BSC097N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 46A; 36W; PG-TDSON-8
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 46A
On-state resistance: 9.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
товару немає в наявності
SPD03N50C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD03N50C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f144a43c7038b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
IRF7821TRPBF IRF7821TRPBF INFINEON TECHNOLOGIES irf7821pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
XC836MT2FRIABFXUMA1 XC836MT2FRIABFXUMA1 INFINEON TECHNOLOGIES XC83X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 500B SRAM; 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
товару немає в наявності
BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 INFINEON TECHNOLOGIES BSS806NEH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 8369 шт:
термін постачання 21-30 дні (днів)
25+15.92 грн
32+ 11.61 грн
50+ 8 грн
100+ 6.81 грн
213+ 4.07 грн
585+ 3.84 грн
Мінімальне замовлення: 25
BTS282ZE3180AATMA2 BTS282ZE3180AATMA2 INFINEON TECHNOLOGIES BTS282Z.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Kind of package: reel; tape
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
товару немає в наявності
BTS282ZE3230AKSA2 INFINEON TECHNOLOGIES BTS282Z.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Kind of package: tube
On-state resistance: 6.5mΩ
Output voltage: 49V
Output current: 36A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
Technology: TEMPFET®
Kind of integrated circuit: low-side
Mounting: THT
Operating temperature: -40...175°C
Case: PG-TO220-7-12
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
1+502.37 грн
3+ 320.85 грн
8+ 303.11 грн
BSR315PH6327XTSA1 BSR315PH6327XTSA1 INFINEON TECHNOLOGIES BSR315PH6327XTSA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Mounting: SMD
Drain-source voltage: -60V
Drain current: -0.49A
On-state resistance: 1.3Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SC59
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
12+35.03 грн
50+ 22.03 грн
80+ 10.87 грн
219+ 10.28 грн
Мінімальне замовлення: 12
IRF7855TRPBF IRF7855TRPBF INFINEON TECHNOLOGIES irf7855pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IRF6894MTRPBF IRF6894MTRPBF INFINEON TECHNOLOGIES irf6894mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET
Kind of package: reel
Power dissipation: 54W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DirectFET
Drain-source voltage: 25V
Drain current: 170A
Type of transistor: N-MOSFET
товару немає в наявності
BCR523E6433HTMA1 BCR523E6433HTMA1 INFINEON TECHNOLOGIES bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: NPN
Collector current: 0.5A
Collector-emitter voltage: 50V
Frequency: 100MHz
Case: SOT23
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
товару немає в наявності
BCR35PNH6433XTMA1 INFINEON TECHNOLOGIES bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Power dissipation: 0.25W
Polarisation: bipolar
Type of transistor: NPN / PNP
Collector current: 0.1A
Collector-emitter voltage: 50V
Frequency: 150MHz
Case: SOT363
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
товару немає в наявності
BCR523UE6433HTMA1 INFINEON TECHNOLOGIES bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.5A; 0.33W; SC74; R1: 1kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: NPN x2
Collector current: 0.5A
Collector-emitter voltage: 50V
Frequency: 100MHz
Case: SC74
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
товару немає в наявності
ITS711L1 ITS711L1 INFINEON TECHNOLOGIES ITS711L1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Output voltage: 2...4V
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
Output current: 1.7A
Type of integrated circuit: power switch
Number of channels: 4
Kind of output: N-Channel
на замовлення 541 шт:
термін постачання 21-30 дні (днів)
2+317.67 грн
3+ 265.4 грн
5+ 202.56 грн
12+ 191.48 грн
Мінімальне замовлення: 2
BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA1 INFINEON TECHNOLOGIES BSS670S2LH6327XTSA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 0.54A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 6014 шт:
термін постачання 21-30 дні (днів)
17+24.68 грн
19+ 20.11 грн
22+ 17.6 грн
27+ 14.11 грн
50+ 11.58 грн
100+ 9.39 грн
245+ 3.54 грн
672+ 3.35 грн
Мінімальне замовлення: 17
IDW100E60FKSA1 IDW100E60FKSA1 INFINEON TECHNOLOGIES IDW100E60FKSA1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
2+233.27 грн
6+ 167.82 грн
15+ 158.21 грн
30+ 154.51 грн
Мінімальне замовлення: 2
IRFIZ24NPBF IRFIZ24NPBF INFINEON TECHNOLOGIES irfiz24n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 13A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 13A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
5+82.8 грн
10+ 70.9 грн
20+ 44.5 грн
Мінімальне замовлення: 5
BSO033N03MSGXUMA1 BSO033N03MSGXUMA1 INFINEON TECHNOLOGIES BSO033N03MSG-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.56W
Type of transistor: N-MOSFET
On-state resistance: 3.8mΩ
Drain current: 22A
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: PG-DSO-8
товару немає в наявності
BSO080P03SHXUMA1 BSO080P03SHXUMA1 INFINEON TECHNOLOGIES BSO080P03SHXUMA1-DTE.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Power dissipation: 1.79W
Case: PG-DSO-8
Gate-source voltage: ±25V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
BSO301SPHXUMA1 BSO301SPHXUMA1 INFINEON TECHNOLOGIES BSO301SPHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Power dissipation: 1.79W
Polarisation: unipolar
On-state resistance: 8mΩ
Drain current: -12.6A
Drain-source voltage: -30V
Case: PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
товару немає в наявності
BSO303SPHXUMA1 BSO303SPHXUMA1 INFINEON TECHNOLOGIES BSO303SPHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Power dissipation: 1.56W
Polarisation: unipolar
On-state resistance: 21mΩ
Drain current: -7.2A
Drain-source voltage: -30V
Case: PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
товару немає в наявності
IDW15E65D2FKSA1 IDW15E65D2FKSA1 INFINEON TECHNOLOGIES IDW15E65D2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: fast switching
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
5+73.93 грн
Мінімальне замовлення: 5
BSZ130N03LSGATMA1 BSZ130N03LSGATMA1 INFINEON TECHNOLOGIES BSZ130N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8
Power dissipation: 25W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 28A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
товару немає в наявності
IRF7862TRPBF IRF7862TRPBF INFINEON TECHNOLOGIES irf7862pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IRFU7440PBF IRFU7440PBF INFINEON TECHNOLOGIES IRFU7440PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 140W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
товару немає в наявності
IPB50R250CPATMA1 IPB50R250CPATMA1 INFINEON TECHNOLOGIES IPB50R250CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
IPI50R140CPXKSA1 IPI50R140CPXKSA1 INFINEON TECHNOLOGIES IPI50R140CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of channel: enhanced
товару немає в наявності
IPI50R199CPXKSA1 IPI50R199CPXKSA1 INFINEON TECHNOLOGIES IPI50R199CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
товару немає в наявності
IPP60R125C6XKSA1 IPP60R125C6XKSA1 INFINEON TECHNOLOGIES IPP60R125C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
IPP60R125CPXKSA1 IPP60R125CPXKSA1 INFINEON TECHNOLOGIES IPP60R125CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
1+624.18 грн
3+ 398.48 грн
6+ 377.04 грн
10+ 376.3 грн
IPP60R125P6XKSA1 IPP60R125P6XKSA1 INFINEON TECHNOLOGIES IPP60R125P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
BSS84PH6327XTSA2 BSS84PH6327XTSA2 INFINEON TECHNOLOGIES BSS84P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 0.37nC
Kind of package: reel
Kind of channel: enhanced
на замовлення 19428 шт:
термін постачання 21-30 дні (днів)
18+22.29 грн
27+ 14.05 грн
50+ 7.87 грн
100+ 6.65 грн
250+ 5.37 грн
395+ 2.18 грн
1084+ 2.06 грн
Мінімальне замовлення: 18
IPB65R099C6ATMA1 IPB65R099C6ATMA1 INFINEON TECHNOLOGIES IPB65R099C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
IPI65R099C6XKSA1 IPI65R099C6XKSA1 INFINEON TECHNOLOGIES IPI65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
товару немає в наявності
IPL65R099C7AUMA1 IPL65R099C7AUMA1 INFINEON TECHNOLOGIES IPL65R099C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
IPP65R099C6XKSA1 IPP65R099C6XKSA1 INFINEON TECHNOLOGIES IPP65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
PVI5033RS-TPBF PVI5033RS-TPBF INFINEON TECHNOLOGIES PVI5033RS-TPBF.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Manufacturer series: PVI5033RPbF
товару немає в наявності
XMC4104F64K64ABXQSA1 XMC4104F64K64ABXQSA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
XMC4104F64K128ABXQSA1 XMC4104F64K128ABXQSA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 128kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
XMC4104Q48F64ABXUMA1 XMC4104Q48F64ABXUMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
XMC4104Q48K64ABXUMA1 XMC4104Q48K64ABXUMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
XMC4400F64F256ABXQMA1 XMC4400F64F256ABXQMA1 INFINEON TECHNOLOGIES XMC4400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4400
Memory: 80kB SRAM; 256kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 31
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
XMC4400F64F512ABXQMA1 XMC4400F64F512ABXQMA1 INFINEON TECHNOLOGIES XMC4400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4400
Memory: 80kB SRAM; 512kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 31
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
XMC4400F64K256ABXQSA1 XMC4400F64K256ABXQSA1 INFINEON TECHNOLOGIES XMC4400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4400
Memory: 80kB SRAM; 256kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 31
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
XMC4400F64K512ABXQSA1 XMC4400F64K512ABXQSA1 INFINEON TECHNOLOGIES XMC4400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4400
Memory: 80kB SRAM; 512kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 31
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
IRLMS1503TRPBF description irlms1503pbf.pdf
IRLMS1503TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товару немає в наявності
IRLMS6702TRPBF irlms6702pbf.pdf
IRLMS6702TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товару немає в наявності
IRFSL4010PBF description irfs4010pbf.pdf
IRFSL4010PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
IRGSL4062DPBF irgs4062dpbf.pdf
IRGSL4062DPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
AUIRGSL4062D1 AUIRGx4062D1.pdf
AUIRGSL4062D1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 39A
Power dissipation: 123W
Case: TO262
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 176ns
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+328.02 грн
3+ 284.62 грн
4+ 271.32 грн
9+ 256.53 грн
Мінімальне замовлення: 2
IRS2104SPBF irs2104.pdf
IRS2104SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
на замовлення 141 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+101.11 грн
5+ 89.45 грн
13+ 70.97 грн
34+ 66.54 грн
Мінімальне замовлення: 4
STT2200N18P55XPSA1 STT2200N18P55.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.8kV; 2.18kA; BG-PS55-1; Ufmax: 1.38V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.8kV
Load current: 2.18kA
Case: BG-PS55-1
Max. forward voltage: 1.38V
Max. forward impulse current: 17.5kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
SGB02N120 SGB02N120.pdf
SGB02N120
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.8A; 62W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.8A
Power dissipation: 62W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.6A
Mounting: SMD
Kind of package: reel
Turn-on time: 40ns
Turn-off time: 375ns
товару немає в наявності
TD330N16KOFHPSA2 TD330N16KOF.pdf
TD330N16KOFHPSA2
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 330A
Mechanical mounting: screw
товару немає в наявності
TLD22522EPXUMA1 Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995 InfineonTLD22522EPDataSheetv0100EN.pdf
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-TSDSO-14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-TSDSO-14
Output current: 60...120mA
Number of channels: 2
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
товару немає в наявності
TT570N16KOFHPSA2 TT570N16KOF.pdf
TT570N16KOFHPSA2
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товару немає в наявності
IRF7726TRPBF irf7726pbf.pdf
IRF7726TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.79W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.79W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
BCR583E6327HTSA1 bcr583.pdf_folderid=db3a30431428a373011440769fd70304&fileid=db3a30431428a3730114408538a1030f.pdf bcr583.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114408538a1030f
BCR583E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: PNP
Collector current: 0.5A
Collector-emitter voltage: 50V
Frequency: 150MHz
Case: SOT23
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товару немає в наявності
BSC0902NSATMA1 BSC0902NS-DTE.pdf
BSC0902NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 91A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 48W
товару немає в наявності
BSC0909NSATMA1 BSC0909NS-DTE.pdf
BSC0909NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 34V
Drain current: 44A
On-state resistance: 9.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 27W
на замовлення 639 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
19+21.74 грн
25+ 17.82 грн
54+ 16.12 грн
100+ 16.04 грн
147+ 15.23 грн
250+ 14.93 грн
Мінімальне замовлення: 19
BSC097N06NSATMA1 BSC097N06NS-DTE.pdf
BSC097N06NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 46A; 36W; PG-TDSON-8
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 46A
On-state resistance: 9.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
товару немає в наявності
SPD03N50C3ATMA1 Infineon-SPD03N50C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f144a43c7038b
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
IRF7821TRPBF irf7821pbf.pdf
IRF7821TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
XC836MT2FRIABFXUMA1 XC83X-DTE.pdf
XC836MT2FRIABFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 500B SRAM; 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
товару немає в наявності
BSS806NEH6327XTSA1 BSS806NEH6327XTSA1.pdf
BSS806NEH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 8369 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
25+15.92 грн
32+ 11.61 грн
50+ 8 грн
100+ 6.81 грн
213+ 4.07 грн
585+ 3.84 грн
Мінімальне замовлення: 25
BTS282ZE3180AATMA2 BTS282Z.pdf
BTS282ZE3180AATMA2
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Kind of package: reel; tape
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
товару немає в наявності
BTS282ZE3230AKSA2 BTS282Z.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Kind of package: tube
On-state resistance: 6.5mΩ
Output voltage: 49V
Output current: 36A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
Technology: TEMPFET®
Kind of integrated circuit: low-side
Mounting: THT
Operating temperature: -40...175°C
Case: PG-TO220-7-12
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+502.37 грн
3+ 320.85 грн
8+ 303.11 грн
BSR315PH6327XTSA1 BSR315PH6327XTSA1.pdf
BSR315PH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Mounting: SMD
Drain-source voltage: -60V
Drain current: -0.49A
On-state resistance: 1.3Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SC59
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
12+35.03 грн
50+ 22.03 грн
80+ 10.87 грн
219+ 10.28 грн
Мінімальне замовлення: 12
IRF7855TRPBF irf7855pbf.pdf
IRF7855TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IRF6894MTRPBF irf6894mpbf.pdf
IRF6894MTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET
Kind of package: reel
Power dissipation: 54W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DirectFET
Drain-source voltage: 25V
Drain current: 170A
Type of transistor: N-MOSFET
товару немає в наявності
BCR523E6433HTMA1 bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309
BCR523E6433HTMA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: NPN
Collector current: 0.5A
Collector-emitter voltage: 50V
Frequency: 100MHz
Case: SOT23
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
товару немає в наявності
BCR35PNH6433XTMA1 bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Power dissipation: 0.25W
Polarisation: bipolar
Type of transistor: NPN / PNP
Collector current: 0.1A
Collector-emitter voltage: 50V
Frequency: 150MHz
Case: SOT363
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
товару немає в наявності
BCR523UE6433HTMA1 bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.5A; 0.33W; SC74; R1: 1kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: NPN x2
Collector current: 0.5A
Collector-emitter voltage: 50V
Frequency: 100MHz
Case: SC74
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
товару немає в наявності
ITS711L1 ITS711L1.pdf
ITS711L1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Output voltage: 2...4V
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
Output current: 1.7A
Type of integrated circuit: power switch
Number of channels: 4
Kind of output: N-Channel
на замовлення 541 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+317.67 грн
3+ 265.4 грн
5+ 202.56 грн
12+ 191.48 грн
Мінімальне замовлення: 2
BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA.pdf
BSS670S2LH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 0.54A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 6014 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
17+24.68 грн
19+ 20.11 грн
22+ 17.6 грн
27+ 14.11 грн
50+ 11.58 грн
100+ 9.39 грн
245+ 3.54 грн
672+ 3.35 грн
Мінімальне замовлення: 17
IDW100E60FKSA1 IDW100E60FKSA1.pdf
IDW100E60FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+233.27 грн
6+ 167.82 грн
15+ 158.21 грн
30+ 154.51 грн
Мінімальне замовлення: 2
IRFIZ24NPBF irfiz24n.pdf
IRFIZ24NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 13A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 13A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+82.8 грн
10+ 70.9 грн
20+ 44.5 грн
Мінімальне замовлення: 5
BSO033N03MSGXUMA1 BSO033N03MSG-dte.pdf
BSO033N03MSGXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.56W
Type of transistor: N-MOSFET
On-state resistance: 3.8mΩ
Drain current: 22A
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: PG-DSO-8
товару немає в наявності
BSO080P03SHXUMA1 BSO080P03SHXUMA1-DTE.PDF
BSO080P03SHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Power dissipation: 1.79W
Case: PG-DSO-8
Gate-source voltage: ±25V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
BSO301SPHXUMA1 BSO301SPHXUMA1-dte.pdf
BSO301SPHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Power dissipation: 1.79W
Polarisation: unipolar
On-state resistance: 8mΩ
Drain current: -12.6A
Drain-source voltage: -30V
Case: PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
товару немає в наявності
BSO303SPHXUMA1 BSO303SPHXUMA1-dte.pdf
BSO303SPHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Power dissipation: 1.56W
Polarisation: unipolar
On-state resistance: 21mΩ
Drain current: -7.2A
Drain-source voltage: -30V
Case: PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
товару немає в наявності
IDW15E65D2FKSA1 IDW15E65D2.pdf
IDW15E65D2FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: fast switching
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+73.93 грн
Мінімальне замовлення: 5
BSZ130N03LSGATMA1 BSZ130N03LSG-DTE.pdf
BSZ130N03LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8
Power dissipation: 25W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 28A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
товару немає в наявності
IRF7862TRPBF irf7862pbf.pdf
IRF7862TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IRFU7440PBF IRFU7440PBF.pdf
IRFU7440PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 140W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
товару немає в наявності
IPB50R250CPATMA1 IPB50R250CP-DTE.pdf
IPB50R250CPATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
IPI50R140CPXKSA1 IPI50R140CP-DTE.pdf
IPI50R140CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of channel: enhanced
товару немає в наявності
IPI50R199CPXKSA1 IPI50R199CP-DTE.pdf
IPI50R199CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
товару немає в наявності
IPP60R125C6XKSA1 IPP60R125C6-DTE.pdf
IPP60R125C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
IPP60R125CPXKSA1 IPP60R125CP-DTE.pdf
IPP60R125CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+624.18 грн
3+ 398.48 грн
6+ 377.04 грн
10+ 376.3 грн
IPP60R125P6XKSA1 IPP60R125P6-DTE.pdf
IPP60R125P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
BSS84PH6327XTSA2 BSS84P.pdf
BSS84PH6327XTSA2
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 0.37nC
Kind of package: reel
Kind of channel: enhanced
на замовлення 19428 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
18+22.29 грн
27+ 14.05 грн
50+ 7.87 грн
100+ 6.65 грн
250+ 5.37 грн
395+ 2.18 грн
1084+ 2.06 грн
Мінімальне замовлення: 18
IPB65R099C6ATMA1 IPB65R099C6-DTE.pdf
IPB65R099C6ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
IPI65R099C6XKSA1 IPI65R099C6-DTE.pdf
IPI65R099C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
товару немає в наявності
IPL65R099C7AUMA1 IPL65R099C7-DTE.pdf
IPL65R099C7AUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
IPP65R099C6XKSA1 IPP65R099C6-DTE.pdf
IPP65R099C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
PVI5033RS-TPBF PVI5033RS-TPBF.pdf
PVI5033RS-TPBF
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Manufacturer series: PVI5033RPbF
товару немає в наявності
XMC4104F64K64ABXQSA1 XMC4100-4200-DTE.pdf
XMC4104F64K64ABXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
XMC4104F64K128ABXQSA1 XMC4100-4200-DTE.pdf
XMC4104F64K128ABXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 128kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
XMC4104Q48F64ABXUMA1 XMC4100-4200-DTE.pdf
XMC4104Q48F64ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
XMC4104Q48K64ABXUMA1 XMC4100-4200-DTE.pdf
XMC4104Q48K64ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
XMC4400F64F256ABXQMA1 XMC4400-DTE.pdf
XMC4400F64F256ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4400
Memory: 80kB SRAM; 256kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 31
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
XMC4400F64F512ABXQMA1 XMC4400-DTE.pdf
XMC4400F64F512ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4400
Memory: 80kB SRAM; 512kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 31
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
XMC4400F64K256ABXQSA1 XMC4400-DTE.pdf
XMC4400F64K256ABXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4400
Memory: 80kB SRAM; 256kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 31
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
XMC4400F64K512ABXQSA1 XMC4400-DTE.pdf
XMC4400F64K512ABXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4400
Memory: 80kB SRAM; 512kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 31
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
Обрати Сторінку:   [  << Попередня Сторінка ]  1 233 466 699 932 1165 1398 1631 1864 2097 2318 2319 2320 2321 2322 2323 2324 2325 2326 2327 2328 2330 2335  [ Наступна Сторінка >> ]