Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6219) > Сторінка 93 з 104
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
Z0103MN0,135 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 1A; SOT223; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 3/5mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 3771 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
Z0103NA,412 | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 5mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товар відсутній |
||||||||||||||||
Z0103NA0,412 | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 5mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товар відсутній |
||||||||||||||||
Z0103NA0QP | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 5mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: reel; tape |
товар відсутній |
||||||||||||||||
![]() |
Z0103NN,135 | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; SOT223; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 3/5mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 2623 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
Z0103NN0,135 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 1A; SOT223; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 3/5mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 2233 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BYV34-500,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 500V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB Semiconductor structure: common cathode; double Reverse recovery time: 60ns Max. forward impulse current: 132A Max. load current: 20A Max. off-state voltage: 500V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB Max. forward voltage: 0.87V Mounting: THT Load current: 10A x2 |
на замовлення 455 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
PHE13007,127 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB Kind of package: tube Collector-emitter voltage: 400V Current gain: 8...40 Collector current: 8A Type of transistor: NPN Power dissipation: 80W Polarisation: bipolar Mounting: THT Case: TO220AB |
на замовлення 952 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
ESDALD18BCX | WeEn Semiconductors |
![]() Description: Diode: TVS array; 19V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD Type of diode: TVS array Breakdown voltage: 19V Max. forward impulse current: 8A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 18V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 1 Kind of package: reel; tape Manufacturer series: LD |
товар відсутній |
|||||||||||||||
![]() |
BTA206X-800CT/DG | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 6A Case: TO220FP Gate current: 35mA Max. forward impulse current: 60A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||||
![]() |
BTA206X-800CT/DGQ | WeEn Semiconductors |
![]() Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 6A Case: TO220AB Gate current: 35mA Max. forward impulse current: 66A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
на замовлення 934 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BTA206X-800ET,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 6A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 6A Case: TO220FP Gate current: 10mA Max. forward impulse current: 60A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BTA206-800CT,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 6A Case: TO220AB Gate current: 35mA Max. forward impulse current: 66A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
на замовлення 999 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BTA206-800ET,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 6A; TO220AB; Igt: 10mA; Ifsm: 66A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 6A Case: TO220AB Gate current: 10mA Max. forward impulse current: 66A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
на замовлення 997 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BT148-400R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube Kind of package: tube Type of thyristor: thyristor Mounting: THT Case: SIP3; SOT82 Max. off-state voltage: 0.4kV Max. load current: 4A Load current: 2.5A Gate current: 15µA Max. forward impulse current: 35A Turn-on time: 2µs |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BT148-500R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube Kind of package: tube Type of thyristor: thyristor Mounting: THT Case: SIP3; SOT82 Max. off-state voltage: 500V Max. load current: 4A Load current: 2.5A Gate current: 15µA Max. forward impulse current: 35A Turn-on time: 2µs |
на замовлення 387 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BT148-600R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube Kind of package: tube Type of thyristor: thyristor Mounting: THT Case: SIP3; SOT82 Max. off-state voltage: 0.6kV Max. load current: 4A Load current: 2.5A Gate current: 15µA Max. forward impulse current: 35A Turn-on time: 2µs |
на замовлення 381 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BT148W-600R,115 | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 1A; 0.6A; Igt: 50uA; SOT223; SMD; reel,tape Kind of package: reel; tape Type of thyristor: thyristor Mounting: SMD Case: SOT223 Max. off-state voltage: 0.6kV Max. load current: 1A Load current: 0.6A Gate current: 50µA Max. forward impulse current: 10A Turn-on time: 2µs |
на замовлення 1417 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BT131-600,116 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/7mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: reel; tape |
на замовлення 9571 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BT131-600,412 | WeEn Semiconductors |
![]() ![]() ![]() Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/7mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
на замовлення 4632 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
BT131-600/DG,116 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 13.7A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/7mA Max. forward impulse current: 13.7A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: reel; tape |
товар відсутній |
||||||||||||||||
![]() |
BT131-600D,412 | WeEn Semiconductors |
![]() Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
на замовлення 1252 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BT131-600D/L01EP | WeEn Semiconductors |
![]() Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 13.7A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 13.7A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
на замовлення 1890 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BT131-600E,412 | WeEn Semiconductors |
![]() Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
на замовлення 3439 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BT131-800,116 | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 3/7mA Max. forward impulse current: 12.5A Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Mounting: THT Case: TO92 |
на замовлення 5554 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
BT131-800D,112 | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 13.7A; 4Q; sensitive gate Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 5/7mA Max. forward impulse current: 13.7A Kind of package: bulk Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Mounting: THT Case: TO92 |
товар відсутній |
||||||||||||||||
![]() |
BT131-800D,116 | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 5/7mA Max. forward impulse current: 12.5A Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Mounting: THT Case: TO92 |
товар відсутній |
|||||||||||||||
BT131-800D,412 | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 13.7A; 4Q; sensitive gate Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 5/7mA Max. forward impulse current: 13.7A Kind of package: bulk Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Mounting: THT Case: TO92 |
товар відсутній |
||||||||||||||||
![]() |
BT131-800E,412 | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 4Q; sensitive gate Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 10mA Max. forward impulse current: 12.5A Kind of package: bulk Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Mounting: THT Case: TO92 |
на замовлення 4990 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BT131W-600,135 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 1A; SOT223; Igt: 3/7mA; Ifsm: 13.8A; 4Q; sensitive gate Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 3/7mA Max. forward impulse current: 13.8A Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Mounting: SMD Case: SOT223 |
на замовлення 3741 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BTA140-600,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 25A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 190A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 614 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BTA140-800,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 190A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||||
![]() |
BT152-1200TQ | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 31A Load current: 20A Gate current: 35mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 250A Turn-on time: 2µs |
на замовлення 579 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BT152-400R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 400V; Ifmax: 20A; 13A; Igt: 3mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 20A Load current: 13A Gate current: 3mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 200A Turn-on time: 2µs |
на замовлення 468 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BT152-500RT,127 | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 500V; Ifmax: 20A; 13A; Igt: 3mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 20A Load current: 13A Gate current: 3mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 200A Turn-on time: 2µs |
товар відсутній |
|||||||||||||||
![]() |
BT152B-400R,118 | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 450V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 450V Max. load current: 20A Load current: 13A Gate current: 3mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 200A Turn-on time: 2µs |
на замовлення 646 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
BT152B-600R,118 | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 20A Load current: 13A Gate current: 3mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 200A Turn-on time: 2µs |
товар відсутній |
||||||||||||||||
BT152B-800R,118 | WeEn Semiconductors |
![]() Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 20A Load current: 13A Gate current: 3mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 200A Turn-on time: 2µs |
товар відсутній |
||||||||||||||||
![]() |
BT152X-400R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 400V; Ifmax: 20A; 13A; Igt: 3mA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 20A Load current: 13A Gate current: 3mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 200A Turn-on time: 2µs |
товар відсутній |
|||||||||||||||
![]() |
BT152X-800R,127 | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 20A Load current: 13A Gate current: 3mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 200A Turn-on time: 2µs |
на замовлення 230 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
WNSC10650T6J | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DFN8x8N Max. forward impulse current: 50A Kind of package: reel; tape |
товар відсутній |
||||||||||||||||
![]() |
WNSC10650WQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 50A Kind of package: tube |
товар відсутній |
|||||||||||||||
![]() |
NXPSC106506Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 50A |
товар відсутній |
|||||||||||||||
![]() |
NXPSC10650B6J | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 50A |
товар відсутній |
|||||||||||||||
![]() |
NXPSC10650D6J | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 50A |
товар відсутній |
|||||||||||||||
![]() |
NXPSC10650X6Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 50A |
товар відсутній |
|||||||||||||||
![]() |
NXPLQSC106506Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 48A |
товар відсутній |
|||||||||||||||
MURS160BJ | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A Mounting: SMD Load current: 1A Semiconductor structure: single diode Reverse recovery time: 75ns Max. forward impulse current: 35A Kind of package: reel; tape Type of diode: rectifying Case: SMB Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.6kV Max. forward voltage: 1.25V |
товар відсутній |
||||||||||||||||
![]() |
BYC8-600,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD59,TO220AC Kind of package: tube Max. off-state voltage: 0.6kV Max. forward voltage: 1.85V Load current: 8A Semiconductor structure: single diode Reverse recovery time: 40ns Max. forward impulse current: 88A Type of diode: rectifying Mounting: THT Case: SOD59; TO220AC |
на замовлення 555 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BYC5-1200PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 1.2kV; 5A; tube; Ifsm: 55A; SOD59,TO220AC Mounting: THT Max. off-state voltage: 1.2kV Case: SOD59; TO220AC Type of diode: rectifying Semiconductor structure: single diode Kind of package: tube Features of semiconductor devices: superfast switching Reverse recovery time: 42ns Max. forward impulse current: 55A Load current: 5A |
товар відсутній |
|||||||||||||||
BT169D-L,116 | WeEn Semiconductors |
![]() Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 50uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 50µA Max. forward impulse current: 9A |
товар відсутній |
||||||||||||||||
![]() |
BT169D,116 | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; reel,tape Mounting: THT Case: TO92 Kind of package: reel; tape Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 50mA Max. forward impulse current: 8A Turn-on time: 2µs |
на замовлення 111 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
BT169D,126 | WeEn Semiconductors |
![]() Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 0.2mA Max. forward impulse current: 9A Turn-on time: 2µs |
товар відсутній |
||||||||||||||||
BT169D/01,112 | WeEn Semiconductors |
![]() Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 0.2mA Max. forward impulse current: 9A Turn-on time: 2µs |
товар відсутній |
||||||||||||||||
BT169DEP | WeEn Semiconductors |
![]() Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 0.2mA Max. forward impulse current: 9A Turn-on time: 2µs |
товар відсутній |
||||||||||||||||
WG50N65DHWQ | WeEn Semiconductors |
![]() Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 160nC Kind of package: tube Turn-on time: 123ns Turn-off time: 265ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |
||||||||||||||||
Z0109MA,412 | WeEn Semiconductors |
![]() Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: reel; tape |
товар відсутній |
||||||||||||||||
Z0109MA0,412 | WeEn Semiconductors |
![]() Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товар відсутній |
||||||||||||||||
Z0109NA,412 | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товар відсутній |
||||||||||||||||
Z0109NA0,412 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товар відсутній |
Z0103MN0,135 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 3771 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 29.17 грн |
18+ | 21.38 грн |
100+ | 12.01 грн |
106+ | 8.13 грн |
289+ | 7.69 грн |
1000+ | 7.39 грн |
Z0103NA,412 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товар відсутній
Z0103NA0,412 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товар відсутній
Z0103NA0QP |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
товар відсутній
Z0103NN,135 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 2623 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 31.54 грн |
19+ | 20.21 грн |
100+ | 12.08 грн |
114+ | 7.47 грн |
314+ | 7.1 грн |
Z0103NN0,135 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 2233 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 26.81 грн |
19+ | 20.13 грн |
100+ | 12.3 грн |
110+ | 7.83 грн |
301+ | 7.39 грн |
BYV34-500,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 132A
Max. load current: 20A
Max. off-state voltage: 500V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 0.87V
Mounting: THT
Load current: 10A x2
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 132A
Max. load current: 20A
Max. off-state voltage: 500V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 0.87V
Mounting: THT
Load current: 10A x2
на замовлення 455 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 54.18 грн |
20+ | 44.95 грн |
53+ | 42.54 грн |
PHE13007,127 |
![]() |
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Kind of package: tube
Collector-emitter voltage: 400V
Current gain: 8...40
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Mounting: THT
Case: TO220AB
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Kind of package: tube
Collector-emitter voltage: 400V
Current gain: 8...40
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Mounting: THT
Case: TO220AB
на замовлення 952 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
12+ | 31.92 грн |
25+ | 29.21 грн |
36+ | 23.94 грн |
99+ | 22.62 грн |
ESDALD18BCX |
![]() |
Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 19V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD
Type of diode: TVS array
Breakdown voltage: 19V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 18V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: LD
Category: Transil diodes - arrays
Description: Diode: TVS array; 19V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD
Type of diode: TVS array
Breakdown voltage: 19V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 18V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: LD
товар відсутній
BTA206X-800CT/DG |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товар відсутній
BTA206X-800CT/DGQ |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
на замовлення 934 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 48.88 грн |
39+ | 21.96 грн |
107+ | 20.79 грн |
BTA206X-800ET,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
11+ | 35.88 грн |
13+ | 30.24 грн |
30+ | 27.16 грн |
41+ | 21.09 грн |
112+ | 19.91 грн |
BTA206-800CT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
на замовлення 999 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 53.62 грн |
13+ | 30.16 грн |
25+ | 23.94 грн |
42+ | 20.87 грн |
114+ | 19.69 грн |
BTA206-800ET,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 10mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 10mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
на замовлення 997 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 53.62 грн |
13+ | 30.16 грн |
25+ | 23.94 грн |
42+ | 20.87 грн |
114+ | 19.69 грн |
BT148-400R,127 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: SIP3; SOT82
Max. off-state voltage: 0.4kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Max. forward impulse current: 35A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: SIP3; SOT82
Max. off-state voltage: 0.4kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Max. forward impulse current: 35A
Turn-on time: 2µs
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.83 грн |
17+ | 22.84 грн |
25+ | 20.5 грн |
51+ | 16.47 грн |
141+ | 15.59 грн |
BT148-500R,127 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: SIP3; SOT82
Max. off-state voltage: 500V
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Max. forward impulse current: 35A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: SIP3; SOT82
Max. off-state voltage: 500V
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Max. forward impulse current: 35A
Turn-on time: 2µs
на замовлення 387 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
16+ | 23.43 грн |
25+ | 21.01 грн |
56+ | 15.23 грн |
152+ | 14.35 грн |
BT148-600R,127 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: SIP3; SOT82
Max. off-state voltage: 0.6kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Max. forward impulse current: 35A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: SIP3; SOT82
Max. off-state voltage: 0.6kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Max. forward impulse current: 35A
Turn-on time: 2µs
на замовлення 381 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 30.36 грн |
15+ | 24.97 грн |
47+ | 18.23 грн |
127+ | 17.21 грн |
BT148W-600R,115 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.6A; Igt: 50uA; SOT223; SMD; reel,tape
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
Case: SOT223
Max. off-state voltage: 0.6kV
Max. load current: 1A
Load current: 0.6A
Gate current: 50µA
Max. forward impulse current: 10A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.6A; Igt: 50uA; SOT223; SMD; reel,tape
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
Case: SOT223
Max. off-state voltage: 0.6kV
Max. load current: 1A
Load current: 0.6A
Gate current: 50µA
Max. forward impulse current: 10A
Turn-on time: 2µs
на замовлення 1417 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 17.58 грн |
26+ | 14.42 грн |
50+ | 12.81 грн |
77+ | 10.91 грн |
212+ | 10.32 грн |
1000+ | 10.1 грн |
BT131-600,116 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
на замовлення 9571 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 29.96 грн |
16+ | 24.38 грн |
18+ | 20.87 грн |
27+ | 13.91 грн |
100+ | 10.47 грн |
137+ | 6.3 грн |
376+ | 5.93 грн |
BT131-600,412 | ![]() |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
на замовлення 4632 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 29.96 грн |
23+ | 16.11 грн |
100+ | 12.37 грн |
137+ | 6.3 грн |
376+ | 5.93 грн |
BT131-600/DG,116 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 13.7A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/7mA
Max. forward impulse current: 13.7A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 13.7A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/7mA
Max. forward impulse current: 13.7A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
товар відсутній
BT131-600D,412 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
на замовлення 1252 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 29.96 грн |
16+ | 24.38 грн |
18+ | 20.87 грн |
25+ | 14.86 грн |
100+ | 11.13 грн |
137+ | 6.3 грн |
375+ | 5.93 грн |
BT131-600D/L01EP |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 13.7A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 13.7A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 13.7A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 13.7A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
на замовлення 1890 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 17.9 грн |
33+ | 11.35 грн |
100+ | 10.18 грн |
109+ | 7.91 грн |
299+ | 7.47 грн |
BT131-600E,412 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
на замовлення 3439 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 16.56 грн |
27+ | 13.69 грн |
31+ | 12.08 грн |
34+ | 10.84 грн |
100+ | 9.08 грн |
128+ | 6.66 грн |
353+ | 6.3 грн |
BT131-800,116 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 3/7mA
Max. forward impulse current: 12.5A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 3/7mA
Max. forward impulse current: 12.5A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
на замовлення 5554 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 29.96 грн |
16+ | 24.38 грн |
18+ | 20.87 грн |
25+ | 16.11 грн |
100+ | 13.91 грн |
127+ | 6.74 грн |
349+ | 6.37 грн |
BT131-800D,112 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 13.7A; 4Q; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 5/7mA
Max. forward impulse current: 13.7A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 13.7A; 4Q; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 5/7mA
Max. forward impulse current: 13.7A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
товар відсутній
BT131-800D,116 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
товар відсутній
BT131-800D,412 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 13.7A; 4Q; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 5/7mA
Max. forward impulse current: 13.7A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 13.7A; 4Q; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 5/7mA
Max. forward impulse current: 13.7A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
товар відсутній
BT131-800E,412 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 4Q; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Max. forward impulse current: 12.5A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 4Q; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Max. forward impulse current: 12.5A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
на замовлення 4990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 29.96 грн |
16+ | 24.38 грн |
18+ | 20.87 грн |
25+ | 17.42 грн |
100+ | 13.91 грн |
138+ | 6.22 грн |
380+ | 5.86 грн |
BT131W-600,135 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3/7mA; Ifsm: 13.8A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 3/7mA
Max. forward impulse current: 13.8A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: SMD
Case: SOT223
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3/7mA; Ifsm: 13.8A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 3/7mA
Max. forward impulse current: 13.8A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: SMD
Case: SOT223
на замовлення 3741 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 30.75 грн |
15+ | 24.89 грн |
18+ | 21.16 грн |
25+ | 19.77 грн |
100+ | 12.67 грн |
104+ | 8.2 грн |
286+ | 7.76 грн |
BTA140-600,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 614 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 64.65 грн |
10+ | 51.4 грн |
23+ | 38.44 грн |
62+ | 36.31 грн |
500+ | 35.66 грн |
BTA140-800,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BT152-1200TQ |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 250A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 250A
Turn-on time: 2µs
на замовлення 579 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 56.38 грн |
19+ | 45.39 грн |
52+ | 43.2 грн |
500+ | 41 грн |
BT152-400R,127 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 20A; 13A; Igt: 3mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 20A; 13A; Igt: 3mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
на замовлення 468 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 55.19 грн |
9+ | 44.51 грн |
24+ | 35.88 грн |
66+ | 33.9 грн |
250+ | 33.39 грн |
BT152-500RT,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 20A; 13A; Igt: 3mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 20A; 13A; Igt: 3mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
товар відсутній
BT152B-400R,118 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 450V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 450V
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 200A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 450V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 450V
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 200A
Turn-on time: 2µs
на замовлення 646 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 48.61 грн |
24+ | 36.46 грн |
65+ | 34.48 грн |
500+ | 33.39 грн |
BT152B-600R,118 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 200A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 200A
Turn-on time: 2µs
товар відсутній
BT152B-800R,118 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 200A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 200A
Turn-on time: 2µs
товар відсутній
BT152X-400R,127 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 20A; 13A; Igt: 3mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 20A; 13A; Igt: 3mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
товар відсутній
BT152X-800R,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
на замовлення 230 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 48.61 грн |
23+ | 37.49 грн |
63+ | 35.44 грн |
WNSC10650T6J |
![]() |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 50A
Kind of package: reel; tape
товар відсутній
WNSC10650WQ |
![]() |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 50A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 50A
Kind of package: tube
товар відсутній
NXPSC106506Q |
![]() |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 50A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 50A
товар відсутній
NXPSC10650B6J |
![]() |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 50A
товар відсутній
NXPSC10650D6J |
![]() |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 50A
товар відсутній
NXPSC10650X6Q |
![]() |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 50A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 50A
товар відсутній
NXPLQSC106506Q |
![]() |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 48A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 48A
товар відсутній
MURS160BJ |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
товар відсутній
BYC8-600,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Kind of package: tube
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.85V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 40ns
Max. forward impulse current: 88A
Type of diode: rectifying
Mounting: THT
Case: SOD59; TO220AC
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Kind of package: tube
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.85V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 40ns
Max. forward impulse current: 88A
Type of diode: rectifying
Mounting: THT
Case: SOD59; TO220AC
на замовлення 555 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 59.92 грн |
9+ | 43.93 грн |
10+ | 36.83 грн |
25+ | 32.65 грн |
33+ | 25.92 грн |
91+ | 24.53 грн |
250+ | 24.45 грн |
BYC5-1200PQ |
![]() |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 5A; tube; Ifsm: 55A; SOD59,TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Case: SOD59; TO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Kind of package: tube
Features of semiconductor devices: superfast switching
Reverse recovery time: 42ns
Max. forward impulse current: 55A
Load current: 5A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 5A; tube; Ifsm: 55A; SOD59,TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Case: SOD59; TO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Kind of package: tube
Features of semiconductor devices: superfast switching
Reverse recovery time: 42ns
Max. forward impulse current: 55A
Load current: 5A
товар відсутній
BT169D-L,116 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 50uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50µA
Max. forward impulse current: 9A
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 50uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50µA
Max. forward impulse current: 9A
товар відсутній
BT169D,116 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; reel,tape
Mounting: THT
Case: TO92
Kind of package: reel; tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; reel,tape
Mounting: THT
Case: TO92
Kind of package: reel; tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 111 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
54+ | 7.41 грн |
63+ | 5.83 грн |
100+ | 5.01 грн |
BT169D,126 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Max. forward impulse current: 9A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Max. forward impulse current: 9A
Turn-on time: 2µs
товар відсутній
BT169D/01,112 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Max. forward impulse current: 9A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Max. forward impulse current: 9A
Turn-on time: 2µs
товар відсутній
BT169DEP |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Max. forward impulse current: 9A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Max. forward impulse current: 9A
Turn-on time: 2µs
товар відсутній
WG50N65DHWQ |
![]() |
Виробник: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 265ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 265ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
Z0109MA,412 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
товар відсутній
Z0109MA0,412 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товар відсутній
Z0109NA,412 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товар відсутній
Z0109NA0,412 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товар відсутній