BYV32E-200PQ WeEn Semiconductors
на замовлення 5882 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 88.33 грн |
10+ | 70.98 грн |
100+ | 48.06 грн |
500+ | 40.76 грн |
1000+ | 33.12 грн |
2000+ | 32.31 грн |
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Технічний опис BYV32E-200PQ WeEn Semiconductors
Description: DIODE ARRAY GP 200V 10A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-220AB, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8, Voltage Coupled to Current - Reverse Leakage @ Vr: 200.
Інші пропозиції BYV32E-200PQ
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BYV32E-200PQ | Виробник : WeEn Semiconductor(Hong Kong)Co.,Limited | Rectifier Diode Switching 200V 20A 25ns 3-Pin(3+Tab) TO-220AB Rail |
товар відсутній |
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BYV32E-200PQ | Виробник : Ween | Rectifier Diode Switching 200V 20A 25ns 3-Pin(3+Tab) TO-220AB Rail |
товар відсутній |
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BYV32E-200PQ | Виробник : WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 125A Case: SOT78; TO220AB Max. forward voltage: 0.85V Heatsink thickness: 1.25...1.4mm Reverse recovery time: 18ns кількість в упаковці: 1 шт |
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BYV32E-200PQ | Виробник : WeEn Semiconductors |
Description: DIODE ARRAY GP 200V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8 Voltage Coupled to Current - Reverse Leakage @ Vr: 200 |
товар відсутній |
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BYV32E-200PQ | Виробник : WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 125A Case: SOT78; TO220AB Max. forward voltage: 0.85V Heatsink thickness: 1.25...1.4mm Reverse recovery time: 18ns |
товар відсутній |