ESDAHD712BE2X WeEn Semiconductors
Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Case: SOT23-3
Max. off-state voltage: 7...12V
Semiconductor structure: asymmetric; bidirectional
Max. forward impulse current: 19A
Breakdown voltage: 7.5...13.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Manufacturer series: HD
Peak pulse power dissipation: 0.5kW
Mounting: SMD
кількість в упаковці: 90000 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Case: SOT23-3
Max. off-state voltage: 7...12V
Semiconductor structure: asymmetric; bidirectional
Max. forward impulse current: 19A
Breakdown voltage: 7.5...13.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Manufacturer series: HD
Peak pulse power dissipation: 0.5kW
Mounting: SMD
кількість в упаковці: 90000 шт
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Технічний опис ESDAHD712BE2X WeEn Semiconductors
Category: Transil diodes - arrays, Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional, Case: SOT23-3, Max. off-state voltage: 7...12V, Semiconductor structure: asymmetric; bidirectional, Max. forward impulse current: 19A, Breakdown voltage: 7.5...13.3V, Leakage current: 1µA, Number of channels: 2, Kind of package: reel; tape, Type of diode: TVS array, Features of semiconductor devices: ESD protection, Manufacturer series: HD, Peak pulse power dissipation: 0.5kW, Mounting: SMD, кількість в упаковці: 90000 шт.
Інші пропозиції ESDAHD712BE2X
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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ESDAHD712BE2X | Виробник : WeEn Semiconductors | WeEn Semiconductors ESDAHD712BE2/SOT23-3L/REEL 7" Q1/T1 *STANDARD MARK SMD |
товар відсутній |
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ESDAHD712BE2X | Виробник : WeEn Semiconductors |
Category: Transil diodes - arrays Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional Case: SOT23-3 Max. off-state voltage: 7...12V Semiconductor structure: asymmetric; bidirectional Max. forward impulse current: 19A Breakdown voltage: 7.5...13.3V Leakage current: 1µA Number of channels: 2 Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Manufacturer series: HD Peak pulse power dissipation: 0.5kW Mounting: SMD |
товар відсутній |