Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6292) > Сторінка 104 з 105
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| WNSC5D046506Q | WeEn Semiconductors |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 2.2V Max. load current: 8A Max. forward impulse current: 28A Kind of package: tube |
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| WNSC5D04650D6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 2.2V Max. load current: 8A Max. forward impulse current: 26A Kind of package: reel; tape |
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| WNSC6D046506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.55V Max. load current: 8A Max. forward impulse current: 36A Kind of package: tube |
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WNSC6D04650Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 30A Kind of package: tube |
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WNS20H100CBJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 10Ax2; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.7V Max. load current: 20A Max. forward impulse current: 180A Kind of package: reel; tape |
на замовлення 380 шт: термін постачання 21-30 дні (днів) |
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WNS20H100CQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.7V Max. load current: 20A Max. forward impulse current: 180A Kind of package: tube |
на замовлення 466 шт: термін постачання 21-30 дні (днів) |
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BT137X-600.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BYV25D-600,118 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 66A Case: DPAK Max. forward voltage: 1.11V Reverse recovery time: 50ns |
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WNSC201200WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Load current: 20A Max. forward voltage: 1.4V Max. load current: 40A Max. forward impulse current: 220A |
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WNSC2D08650DJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Load current: 8A Max. forward impulse current: 48A |
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| WNSC2D08650TJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8N; reel,tape Technology: SiC Case: DFN8x8N Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Load current: 8A Max. forward impulse current: 48A |
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WNSC2D101200WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Load current: 10A Max. forward voltage: 1.88V Max. forward impulse current: 72A |
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WNSC2D401200CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Load current: 20A x2 Max. load current: 40A Max. forward impulse current: 125A |
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| WNSC2D401200W6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Load current: 40A Max. forward voltage: 2.5V Max. load current: 80A Max. forward impulse current: 350A |
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| WNSC2D501200W6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Load current: 50A Max. forward voltage: 2.5V Max. load current: 100A Max. forward impulse current: 420A |
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BT138-800E.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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| BT155W-1400TQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 1.4kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT Turn-on time: 2µs Max. forward impulse current: 715A Kind of package: tube Gate current: 50mA Load current: 50A Max. load current: 79A Max. off-state voltage: 1.4kV Type of thyristor: thyristor Case: SOT429; TO247-3 Mounting: THT |
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BT138-800G.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BYC5-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD59,TO220AC Type of diode: rectifying Max. off-state voltage: 0.6kV Max. forward voltage: 1.4V Load current: 5A Semiconductor structure: single diode Case: SOD59; TO220AC Mounting: THT Features of semiconductor devices: ultrafast switching Max. forward impulse current: 44A Kind of package: tube Reverse recovery time: 50ns Heatsink thickness: 1.27...1.39mm |
на замовлення 886 шт: термін постачання 21-30 дні (днів) |
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BYC5B-600,118 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 5A; 30ns; D2PAK,SOT404; Ufmax: 2.2V Mounting: SMD Case: D2PAK; SOT404 Max. off-state voltage: 0.6kV Kind of package: reel; tape Max. forward voltage: 2.2V Load current: 5A Semiconductor structure: single diode Reverse recovery time: 30ns Max. forward impulse current: 44A Type of diode: rectifying |
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WNSC101200Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.4V Max. load current: 20A Max. forward impulse current: 110A Kind of package: tube |
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WNSC101200WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.4V Max. load current: 20A Max. forward impulse current: 110A Kind of package: tube |
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TB100ML | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 700V; 1A; 2W; TO92 Kind of package: Ammo Pack Power dissipation: 2W Polarisation: bipolar Mounting: THT Case: TO92 Collector-emitter voltage: 700V Current gain: 12...34 Collector current: 1A Type of transistor: NPN |
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WNSC401200CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 40A Max. forward impulse current: 200A Kind of package: tube |
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| BT234X-600E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 35A; 4Q Technology: 4Q Case: TO220FP Mounting: THT Kind of package: tube Max. off-state voltage: 0.6kV Features of semiconductor devices: logic level; sensitive gate Gate current: 25mA Type of thyristor: triac Max. forward impulse current: 35A Max. load current: 4A |
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| BT234X-800D,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q Technology: 4Q Case: TO220FP Mounting: THT Kind of package: tube Max. off-state voltage: 0.8kV Features of semiconductor devices: logic level; sensitive gate Gate current: 10mA Type of thyristor: triac Max. forward impulse current: 35A Max. load current: 4A |
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BT236X-600F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 6A; TO220FP; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate Mounting: THT Case: TO220FP Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 6A Gate current: 25/70mA Max. forward impulse current: 65A |
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BT236X-600G,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q Mounting: THT Case: TO220FP Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 6A Gate current: 50/100mA Max. forward impulse current: 65A |
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BT236X-800,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Mounting: THT Case: TO220FP Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 6A Gate current: 35/70mA Max. forward impulse current: 65A |
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BYC40W-1200PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 40A; tube; Ifsm: 300A; TO247-2; 91ns Max. off-state voltage: 1.2kV Max. forward voltage: 2.2V Load current: 40A Semiconductor structure: single diode Reverse recovery time: 91ns Max. forward impulse current: 300A Kind of package: tube Type of diode: rectifying Features of semiconductor devices: superfast switching Mounting: THT Case: TO247-2 |
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BT138X-600.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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TB100EP | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 700V; 1A; 2W; TO92 Collector-emitter voltage: 700V Current gain: 12...34 Collector current: 1A Type of transistor: NPN Power dissipation: 2W Polarisation: bipolar Kind of package: bulk Mounting: THT Case: TO92 |
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WNSC12650WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 72A Kind of package: tube |
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WNS40100CQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.64V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: TO220AB Max. forward voltage: 0.64V Max. load current: 40A Max. forward impulse current: 330A Kind of package: tube |
на замовлення 182 шт: термін постачання 21-30 дні (днів) |
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BYC58X-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 120A Case: SOD113; TO220FP-2 Max. forward voltage: 2.4V Reverse recovery time: 21ns |
на замовлення 980 шт: термін постачання 21-30 дні (днів) |
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| BYC12MD-650PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 650V; 12A; 13ns; DPAK; Ufmax: 2.3V; Ifsm: 135A Mounting: SMD Case: DPAK Max. off-state voltage: 650V Kind of package: reel; tape Max. load current: 24A Max. forward voltage: 2.3V Load current: 12A Semiconductor structure: single diode Reverse recovery time: 13ns Max. forward impulse current: 135A Type of diode: rectifying Features of semiconductor devices: ultrafast switching |
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| TYN16X-600RT,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 16A Load current: 10.2A Gate current: 25mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 231A |
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| TYN16X-800RT,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 16A Load current: 10.2A Gate current: 25mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 231A |
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BYC30-1200PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 270A Case: SOD59; TO220AC Max. forward voltage: 3.3V Heatsink thickness: 1.14...1.4mm Reverse recovery time: 65ns |
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BYC30-600P,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 200A Case: SOD59; TO220AC Max. forward voltage: 1.38V |
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BYC30DW-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; TO247-2; 26ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 260A Case: TO247-2 Max. forward voltage: 1.5V Reverse recovery time: 26ns |
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| BYC30MX-650PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; Ufmax: 2.75V Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 30A Max. load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 270A Case: SOD113; TO220FP-2 Max. forward voltage: 2.75V Reverse recovery time: 20ns |
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BYC30W-1200PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO247-2; 65ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 300A Case: TO247-2 Max. forward voltage: 3.5V Reverse recovery time: 65ns |
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BYC30W-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 300A Case: TO247AC Modified Max. forward voltage: 1.8V Reverse recovery time: 22ns |
на замовлення 199 шт: термін постачання 21-30 дні (днів) |
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BYC30WT-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns Mounting: THT Features of semiconductor devices: ultrafast switching Case: TO247-3 Max. off-state voltage: 0.6kV Max. forward voltage: 1.38V Load current: 30A Semiconductor structure: single diode Reverse recovery time: 70ns Max. forward impulse current: 270A Kind of package: tube Type of diode: rectifying |
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BYC30X-600P,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 200A Case: SOD113; TO220FP-2 Max. forward voltage: 2.75V Reverse recovery time: 35ns |
на замовлення 858 шт: термін постачання 21-30 дні (днів) |
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BYC30Y-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 200A Case: SOD59; TO220AC Max. forward voltage: 1.38V |
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BYC60W-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 660A; Ufmax: 2V; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 660A Case: TO247AC Modified Max. forward voltage: 2V Reverse recovery time: 50ns |
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BYQ60W-600PT2Q | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; TO247-2; 55ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 600A Case: TO247-2 Max. forward voltage: 1.6V Reverse recovery time: 55ns |
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BYV60W-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; Ufmax: 1.2V; 55ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 600A Case: TO247AC Modified Max. forward voltage: 1.2V Reverse recovery time: 55ns |
товар відсутній |
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| BYV60W-600PT2Q | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; TO247-2; 40ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Max. load current: 120A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 600A Case: TO247-2 Max. forward voltage: 1.4V Reverse recovery time: 40ns |
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BUJ303B,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 5A; 100W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 5A Power dissipation: 100W Case: TO220AB Current gain: 23...40 Mounting: THT Kind of package: tube |
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WND10M600XQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 350A; Ufmax: 0.85V Max. off-state voltage: 0.6kV Load current: 10A Max. forward impulse current: 350A Case: SOD113; TO220FP-2 Kind of package: tube Max. forward voltage: 0.85V Mounting: THT Type of diode: rectifying Semiconductor structure: single diode |
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| TYN16-800RTQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 16A Load current: 10.2A Gate current: 25mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 231A |
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NXPSC08650Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 1.5V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.5V Max. load current: 16A Max. forward impulse current: 48A Kind of package: tube |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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BYC5D-500,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 500V; 5A; tube; Ifsm: 44A; SOD59,TO220AC Mounting: THT Case: SOD59; TO220AC Kind of package: tube Type of diode: rectifying Max. off-state voltage: 500V Max. forward voltage: 1.45V Load current: 5A Semiconductor structure: single diode Reverse recovery time: 16ns Max. forward impulse current: 44A |
на замовлення 859 шт: термін постачання 21-30 дні (днів) |
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BTA330-800BTQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com Mounting: THT Kind of package: tube Max. forward impulse current: 270A Gate current: 50mA Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com Max. load current: 30A Type of thyristor: triac Max. off-state voltage: 0.8kV Case: TO220AB |
на замовлення 567 шт: термін постачання 21-30 дні (днів) |
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| WG40N65DFJQ | WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 26W Case: SOT1293; TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 173nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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| WNSC12650T6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: DFN8x8N Max. forward impulse current: 57A Kind of package: reel; tape |
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| BT152B-1200TJ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; D2PAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 31A Load current: 20A Gate current: 35mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 250A Turn-on time: 2µs |
товар відсутній |
| WNSC5D046506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2.2V
Max. load current: 8A
Max. forward impulse current: 28A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2.2V
Max. load current: 8A
Max. forward impulse current: 28A
Kind of package: tube
товар відсутній
| WNSC5D04650D6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 2.2V
Max. load current: 8A
Max. forward impulse current: 26A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 2.2V
Max. load current: 8A
Max. forward impulse current: 26A
Kind of package: reel; tape
товар відсутній
| WNSC6D046506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 8A
Max. forward impulse current: 36A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 8A
Max. forward impulse current: 36A
Kind of package: tube
товар відсутній
| WNSC6D04650Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 30A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 30A
Kind of package: tube
товар відсутній
| WNS20H100CBJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: reel; tape
на замовлення 380 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 54.07 грн |
| 10+ | 43.01 грн |
| 39+ | 22.7 грн |
| 106+ | 21.51 грн |
| WNS20H100CQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
на замовлення 466 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 37.93 грн |
| 13+ | 29.3 грн |
| 42+ | 21.21 грн |
| 114+ | 20.08 грн |
| 250+ | 19.71 грн |
| BT137X-600.127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BYV25D-600,118 |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 66A
Case: DPAK
Max. forward voltage: 1.11V
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 66A
Case: DPAK
Max. forward voltage: 1.11V
Reverse recovery time: 50ns
товар відсутній
| WNSC201200WQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 20A
Max. forward voltage: 1.4V
Max. load current: 40A
Max. forward impulse current: 220A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 20A
Max. forward voltage: 1.4V
Max. load current: 40A
Max. forward impulse current: 220A
товар відсутній
| WNSC2D08650DJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 8A
Max. forward impulse current: 48A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 8A
Max. forward impulse current: 48A
товар відсутній
| WNSC2D08650TJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 8A
Max. forward impulse current: 48A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 8A
Max. forward impulse current: 48A
товар відсутній
| WNSC2D101200WQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 10A
Max. forward voltage: 1.88V
Max. forward impulse current: 72A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 10A
Max. forward voltage: 1.88V
Max. forward impulse current: 72A
товар відсутній
| WNSC2D401200CWQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 20A x2
Max. load current: 40A
Max. forward impulse current: 125A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 20A x2
Max. load current: 40A
Max. forward impulse current: 125A
товар відсутній
| WNSC2D401200W6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 40A
Max. forward voltage: 2.5V
Max. load current: 80A
Max. forward impulse current: 350A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 40A
Max. forward voltage: 2.5V
Max. load current: 80A
Max. forward impulse current: 350A
товар відсутній
| WNSC2D501200W6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 50A
Max. forward voltage: 2.5V
Max. load current: 100A
Max. forward impulse current: 420A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 50A
Max. forward voltage: 2.5V
Max. load current: 100A
Max. forward impulse current: 420A
товар відсутній
| BT138-800E.127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BT155W-1400TQ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Turn-on time: 2µs
Max. forward impulse current: 715A
Kind of package: tube
Gate current: 50mA
Load current: 50A
Max. load current: 79A
Max. off-state voltage: 1.4kV
Type of thyristor: thyristor
Case: SOT429; TO247-3
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Turn-on time: 2µs
Max. forward impulse current: 715A
Kind of package: tube
Gate current: 50mA
Load current: 50A
Max. load current: 79A
Max. off-state voltage: 1.4kV
Type of thyristor: thyristor
Case: SOT429; TO247-3
Mounting: THT
товар відсутній
| BT138-800G.127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BYC5-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD59,TO220AC
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.4V
Load current: 5A
Semiconductor structure: single diode
Case: SOD59; TO220AC
Mounting: THT
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 44A
Kind of package: tube
Reverse recovery time: 50ns
Heatsink thickness: 1.27...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD59,TO220AC
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.4V
Load current: 5A
Semiconductor structure: single diode
Case: SOD59; TO220AC
Mounting: THT
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 44A
Kind of package: tube
Reverse recovery time: 50ns
Heatsink thickness: 1.27...1.39mm
на замовлення 886 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 37.93 грн |
| 13+ | 29.82 грн |
| 25+ | 27.05 грн |
| 35+ | 25.63 грн |
| 95+ | 24.2 грн |
| 500+ | 23.3 грн |
| BYC5B-600,118 |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; D2PAK,SOT404; Ufmax: 2.2V
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Max. forward voltage: 2.2V
Load current: 5A
Semiconductor structure: single diode
Reverse recovery time: 30ns
Max. forward impulse current: 44A
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; D2PAK,SOT404; Ufmax: 2.2V
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Max. forward voltage: 2.2V
Load current: 5A
Semiconductor structure: single diode
Reverse recovery time: 30ns
Max. forward impulse current: 44A
Type of diode: rectifying
товар відсутній
| WNSC101200Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.4V
Max. load current: 20A
Max. forward impulse current: 110A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.4V
Max. load current: 20A
Max. forward impulse current: 110A
Kind of package: tube
товар відсутній
| WNSC101200WQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. load current: 20A
Max. forward impulse current: 110A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. load current: 20A
Max. forward impulse current: 110A
Kind of package: tube
товар відсутній
| TB100ML |
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1A; 2W; TO92
Kind of package: Ammo Pack
Power dissipation: 2W
Polarisation: bipolar
Mounting: THT
Case: TO92
Collector-emitter voltage: 700V
Current gain: 12...34
Collector current: 1A
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1A; 2W; TO92
Kind of package: Ammo Pack
Power dissipation: 2W
Polarisation: bipolar
Mounting: THT
Case: TO92
Collector-emitter voltage: 700V
Current gain: 12...34
Collector current: 1A
Type of transistor: NPN
товар відсутній
| WNSC401200CWQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 200A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 200A
Kind of package: tube
товар відсутній
| BT234X-600E,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 35A; 4Q
Technology: 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.6kV
Features of semiconductor devices: logic level; sensitive gate
Gate current: 25mA
Type of thyristor: triac
Max. forward impulse current: 35A
Max. load current: 4A
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 35A; 4Q
Technology: 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.6kV
Features of semiconductor devices: logic level; sensitive gate
Gate current: 25mA
Type of thyristor: triac
Max. forward impulse current: 35A
Max. load current: 4A
товар відсутній
| BT234X-800D,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Technology: 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: logic level; sensitive gate
Gate current: 10mA
Type of thyristor: triac
Max. forward impulse current: 35A
Max. load current: 4A
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Technology: 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: logic level; sensitive gate
Gate current: 10mA
Type of thyristor: triac
Max. forward impulse current: 35A
Max. load current: 4A
товар відсутній
| BT236X-600F,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 6A
Gate current: 25/70mA
Max. forward impulse current: 65A
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 6A
Gate current: 25/70mA
Max. forward impulse current: 65A
товар відсутній
| BT236X-600G,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 6A
Gate current: 50/100mA
Max. forward impulse current: 65A
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 6A
Gate current: 50/100mA
Max. forward impulse current: 65A
товар відсутній
| BT236X-800,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Gate current: 35/70mA
Max. forward impulse current: 65A
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Gate current: 35/70mA
Max. forward impulse current: 65A
товар відсутній
| BYC40W-1200PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 40A; tube; Ifsm: 300A; TO247-2; 91ns
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.2V
Load current: 40A
Semiconductor structure: single diode
Reverse recovery time: 91ns
Max. forward impulse current: 300A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Mounting: THT
Case: TO247-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 40A; tube; Ifsm: 300A; TO247-2; 91ns
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.2V
Load current: 40A
Semiconductor structure: single diode
Reverse recovery time: 91ns
Max. forward impulse current: 300A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Mounting: THT
Case: TO247-2
товар відсутній
| BT138X-600.127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| TB100EP |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1A; 2W; TO92
Collector-emitter voltage: 700V
Current gain: 12...34
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO92
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1A; 2W; TO92
Collector-emitter voltage: 700V
Current gain: 12...34
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO92
товар відсутній
| WNSC12650WQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 72A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 72A
Kind of package: tube
товар відсутній
| WNS40100CQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. forward voltage: 0.64V
Max. load current: 40A
Max. forward impulse current: 330A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. forward voltage: 0.64V
Max. load current: 40A
Max. forward impulse current: 330A
Kind of package: tube
на замовлення 182 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 53.26 грн |
| 10+ | 39.19 грн |
| 11+ | 35.59 грн |
| 25+ | 35.37 грн |
| 50+ | 32.74 грн |
| BYC58X-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.4V
Reverse recovery time: 21ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.4V
Reverse recovery time: 21ns
на замовлення 980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.93 грн |
| 17+ | 52.45 грн |
| 46+ | 49.45 грн |
| 500+ | 47.96 грн |
| BYC12MD-650PJ |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 650V; 12A; 13ns; DPAK; Ufmax: 2.3V; Ifsm: 135A
Mounting: SMD
Case: DPAK
Max. off-state voltage: 650V
Kind of package: reel; tape
Max. load current: 24A
Max. forward voltage: 2.3V
Load current: 12A
Semiconductor structure: single diode
Reverse recovery time: 13ns
Max. forward impulse current: 135A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 650V; 12A; 13ns; DPAK; Ufmax: 2.3V; Ifsm: 135A
Mounting: SMD
Case: DPAK
Max. off-state voltage: 650V
Kind of package: reel; tape
Max. load current: 24A
Max. forward voltage: 2.3V
Load current: 12A
Semiconductor structure: single diode
Reverse recovery time: 13ns
Max. forward impulse current: 135A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
товар відсутній
| TYN16X-600RT,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
товар відсутній
| TYN16X-800RT,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
товар відсутній
| BYC30-1200PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD59; TO220AC
Max. forward voltage: 3.3V
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 65ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD59; TO220AC
Max. forward voltage: 3.3V
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 65ns
товар відсутній
| BYC30-600P,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
товар відсутній
| BYC30DW-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: TO247-2
Max. forward voltage: 1.5V
Reverse recovery time: 26ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: TO247-2
Max. forward voltage: 1.5V
Reverse recovery time: 26ns
товар відсутній
| BYC30MX-650PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Max. load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 20ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Max. load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 20ns
товар відсутній
| BYC30W-1200PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO247-2; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 300A
Case: TO247-2
Max. forward voltage: 3.5V
Reverse recovery time: 65ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO247-2; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 300A
Case: TO247-2
Max. forward voltage: 3.5V
Reverse recovery time: 65ns
товар відсутній
| BYC30W-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 300A
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 300A
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
на замовлення 199 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 117.01 грн |
| 10+ | 89.17 грн |
| 15+ | 61.44 грн |
| 40+ | 57.7 грн |
| BYC30WT-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns
Mounting: THT
Features of semiconductor devices: ultrafast switching
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.38V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 70ns
Max. forward impulse current: 270A
Kind of package: tube
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns
Mounting: THT
Features of semiconductor devices: ultrafast switching
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.38V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 70ns
Max. forward impulse current: 270A
Kind of package: tube
Type of diode: rectifying
товар відсутній
| BYC30X-600P,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
на замовлення 858 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 104.9 грн |
| 5+ | 87.67 грн |
| 13+ | 69.69 грн |
| 35+ | 65.94 грн |
| 250+ | 64.44 грн |
| BYC30Y-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
товар відсутній
| BYC60W-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 660A; Ufmax: 2V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 660A
Case: TO247AC Modified
Max. forward voltage: 2V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 660A; Ufmax: 2V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 660A
Case: TO247AC Modified
Max. forward voltage: 2V
Reverse recovery time: 50ns
товар відсутній
| BYQ60W-600PT2Q |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; TO247-2; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 600A
Case: TO247-2
Max. forward voltage: 1.6V
Reverse recovery time: 55ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; TO247-2; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 600A
Case: TO247-2
Max. forward voltage: 1.6V
Reverse recovery time: 55ns
товар відсутній
| BYV60W-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; Ufmax: 1.2V; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 600A
Case: TO247AC Modified
Max. forward voltage: 1.2V
Reverse recovery time: 55ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; Ufmax: 1.2V; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 600A
Case: TO247AC Modified
Max. forward voltage: 1.2V
Reverse recovery time: 55ns
товар відсутній
| BYV60W-600PT2Q |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; TO247-2; 40ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Max. load current: 120A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 600A
Case: TO247-2
Max. forward voltage: 1.4V
Reverse recovery time: 40ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; TO247-2; 40ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Max. load current: 120A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 600A
Case: TO247-2
Max. forward voltage: 1.4V
Reverse recovery time: 40ns
товар відсутній
| BUJ303B,127 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 5A; 100W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 5A
Power dissipation: 100W
Case: TO220AB
Current gain: 23...40
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 5A; 100W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 5A
Power dissipation: 100W
Case: TO220AB
Current gain: 23...40
Mounting: THT
Kind of package: tube
товар відсутній
| WND10M600XQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 350A; Ufmax: 0.85V
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 350A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 0.85V
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 350A; Ufmax: 0.85V
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 350A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 0.85V
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
товар відсутній
| TYN16-800RTQ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
товар відсутній
| NXPSC08650Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.5V
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.5V
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 179.95 грн |
| BYC5D-500,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5A; tube; Ifsm: 44A; SOD59,TO220AC
Mounting: THT
Case: SOD59; TO220AC
Kind of package: tube
Type of diode: rectifying
Max. off-state voltage: 500V
Max. forward voltage: 1.45V
Load current: 5A
Semiconductor structure: single diode
Reverse recovery time: 16ns
Max. forward impulse current: 44A
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5A; tube; Ifsm: 44A; SOD59,TO220AC
Mounting: THT
Case: SOD59; TO220AC
Kind of package: tube
Type of diode: rectifying
Max. off-state voltage: 500V
Max. forward voltage: 1.45V
Load current: 5A
Semiconductor structure: single diode
Reverse recovery time: 16ns
Max. forward impulse current: 44A
на замовлення 859 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 55.68 грн |
| 13+ | 29.82 грн |
| 25+ | 26.38 грн |
| 35+ | 25.03 грн |
| 97+ | 23.68 грн |
| 100+ | 23.53 грн |
| 250+ | 22.78 грн |
| BTA330-800BTQ |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Kind of package: tube
Max. forward impulse current: 270A
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Max. load current: 30A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Case: TO220AB
Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Kind of package: tube
Max. forward impulse current: 270A
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Max. load current: 30A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Case: TO220AB
на замовлення 567 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 78.68 грн |
| 10+ | 69.69 грн |
| 14+ | 65.19 грн |
| 30+ | 62.94 грн |
| 37+ | 62.19 грн |
| 100+ | 59.94 грн |
| WG40N65DFJQ |
Виробник: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 26W
Case: SOT1293; TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 173nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 26W
Case: SOT1293; TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 173nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| WNSC12650T6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 57A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 57A
Kind of package: reel; tape
товар відсутній
| BT152B-1200TJ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 35mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 250A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 35mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 250A
Turn-on time: 2µs
товар відсутній