| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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2SC2713-BL(TE85L,F | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.15W; SC59 Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SC59 Frequency: 100MHz Collector-emitter voltage: 120V Current gain: 350...700 Collector current: 0.1A Type of transistor: NPN |
на замовлення 2370 шт: термін постачання 21-30 дні (днів) |
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2SC2713-GR,LF(T | TOSHIBA |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 120V; 0.1A; 0.15W; SC59 Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SC59 Frequency: 100MHz Collector-emitter voltage: 120V Current gain: 200...400 Collector current: 0.1A Type of transistor: NPN |
на замовлення 12880 шт: термін постачання 21-30 дні (днів) |
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74LCX08FT(AE) | TOSHIBA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 1.65÷3.6VDC; -40÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 1.65...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Delay time: 6.5ns Family: LCX Terminal pitch: 0.65mm |
товар відсутній |
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TLP104(E(T | TOSHIBA |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: gate; 3.75kV; 1Mbps; SO6; 15kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate Insulation voltage: 3.75kV Transfer rate: 1Mbps Case: SO6 Slew rate: 15kV/μs |
на замовлення 75 шт: термін постачання 21-30 дні (днів) |
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| TLP104(TPL.E(T | TOSHIBA |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 3.75kV Case: SO6 Turn-on time: 550ns Turn-off time: 0.4µs Max. off-state voltage: 5V Output voltage: -500mV...30V |
товар відсутній |
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| TLP104(TPR.E(T | TOSHIBA |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 3.75kV Case: SO6 Turn-on time: 550ns Turn-off time: 0.4µs Max. off-state voltage: 5V Output voltage: -500mV...30V |
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| TLP104(V4-TPL.E(T | TOSHIBA |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 3.75kV Case: SO6 Turn-on time: 550ns Turn-off time: 0.4µs Max. off-state voltage: 5V Output voltage: -500mV...30V |
товар відсутній |
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GT40WR21,Q(O | TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN Type of transistor: IGBT Collector-emitter voltage: 1.8kV Collector current: 40A Power dissipation: 375W Case: TO3PN Gate-emitter voltage: ±25V Pulsed collector current: 80A Mounting: THT Kind of package: tube Turn-on time: 950ns Turn-off time: 570ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 86 шт: термін постачання 21-30 дні (днів) |
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TPHR9003NL | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 78W; SOP8A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Power dissipation: 78W Case: SOP8A Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 74nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 351 шт: термін постачання 21-30 дні (днів) |
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CUS520,H3F(T | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape Kind of package: reel; tape Type of diode: Schottky switching Mounting: SMD Case: SOD323 Max. off-state voltage: 30V Max. load current: 0.3A Max. forward voltage: 0.6V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 1A |
на замовлення 1470 шт: термін постачання 21-30 дні (днів) |
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DF5A5.6F(TE85L,F) | TOSHIBA |
Category: Transil diodes - arrays Description: Diode: TVS array; 5.6V; 0.2W; unidirectional,common anode; SOT25 Number of channels: 4 Mounting: SMD Case: SOT25 Kind of package: reel; tape Breakdown voltage: 5.6V Leakage current: 1µA Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.2W Semiconductor structure: common anode; unidirectional |
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| TLP5754H(D4TP4.E(T | TOSHIBA |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: totem pole Insulation voltage: 5kV Case: SO6L Turn-on time: 15ns Turn-off time: 8ns Slew rate: 35kV/μs Number of pins: 6 |
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| TLP5754H(TP.E(T | TOSHIBA |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: totem pole Insulation voltage: 5kV Case: SO6L Turn-on time: 15ns Turn-off time: 8ns Slew rate: 35kV/μs Number of pins: 6 |
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| TLX9185A(TEEGBTF(O | TOSHIBA |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; Uce: 80V; SO6; Uout: 6V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Collector-emitter voltage: 80V Case: SO6 Turn-on time: 5µs Turn-off time: 5µs Output voltage: 6V |
товар відсутній |
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TK34E10N1,S1X(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 103W Case: TO220 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
на замовлення 812 шт: термін постачання 21-30 дні (днів) |
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SSM6K403TU,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Power dissipation: 0.5W Case: UF6 Gate-source voltage: ±10V On-state resistance: 66mΩ Mounting: SMD Gate charge: 16.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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| SSM3K72KCT,L3F(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C Mounting: SMD Case: CST3C Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.4A On-state resistance: 1.75Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Gate charge: 0.39nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |
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SSM3J328R,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±8V On-state resistance: 88.4mΩ Mounting: SMD Gate charge: 12.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
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SSM3J334R,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±20V On-state resistance: 136mΩ Mounting: SMD Gate charge: 5.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 2310 шт: термін постачання 21-30 дні (днів) |
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SSM3K341R,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6A Pulsed drain current: 24A Power dissipation: 2.4W Case: SOT23F Gate-source voltage: ±20V On-state resistance: 69mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 5178 шт: термін постачання 21-30 дні (днів) |
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SSM3K36FS,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM Mounting: SMD Case: SSM Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.5A On-state resistance: 1.52Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Kind of channel: enhanced Pulsed drain current: 1A Gate-source voltage: ±10V |
товар відсутній |
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SSM6J502NU,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6 Mounting: SMD Case: uDFN6 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 60.5mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 24.8nC Kind of channel: enhanced Gate-source voltage: ±8V |
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SSM6J503NU,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6 Mounting: SMD Case: uDFN6 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 89.6mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 12.8nC Kind of channel: enhanced Gate-source voltage: ±8V |
товар відсутній |
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SSM6K504NU,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 18A Power dissipation: 1.25W Case: uDFN6 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 1678 шт: термін постачання 21-30 дні (днів) |
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SSM3K35MFV,L3F(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723 Mounting: SMD Case: SOT723 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.18A On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V |
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SSM3K7002KFU,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.4A Power dissipation: 0.15W Case: SC70 Gate-source voltage: ±20V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 0.39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 38125 шт: термін постачання 21-30 дні (днів) |
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TBC857B,LM(T | TOSHIBA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.32W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.32W Case: SOT23 Current gain: 210...475 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz |
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TDTC114E,LM(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: NPN Power dissipation: 0.32W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
на замовлення 7210 шт: термін постачання 21-30 дні (днів) |
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TDTC114Y,LM(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 10kΩ; R2: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
на замовлення 7910 шт: термін постачання 21-30 дні (днів) |
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TDTC124E,LM(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.32W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
на замовлення 8050 шт: термін постачання 21-30 дні (днів) |
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TDTC144E,LM(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.32W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
на замовлення 10660 шт: термін постачання 21-30 дні (днів) |
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74LCX125FT(AE) | TOSHIBA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: TSSOP14 Manufacturer series: LCX Supply voltage: 1.65...3.6V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Delay time: 7ns Terminal pitch: 0.65mm |
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74LCX126FT(AE) | TOSHIBA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Supply voltage: 1.65...3.6V DC Case: TSSOP14 Operating temperature: -40...125°C Mounting: SMD Kind of package: reel; tape Number of channels: 4 Delay time: 7ns Kind of output: 3-state Terminal pitch: 0.65mm Manufacturer series: LCX |
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TK3P50D,RQ | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 60W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced |
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| TLP3115(TP.M.F) | TOSHIBA |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; Uinsul: 1.5kV; SOP4; Urmax: 40V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Insulation voltage: 1.5kV Case: SOP4 Turn-on time: 500µs Turn-off time: 0.5ms Max. off-state voltage: 40V |
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| TLP3123(TP.F) | TOSHIBA |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; Uinsul: 1.5kV; SOP4; Urmax: 40V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Insulation voltage: 1.5kV Case: SOP4 Turn-on time: 3ms Turn-off time: 0.5ms Max. off-state voltage: 40V |
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TLP3114(F) | TOSHIBA |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; 1.5kV; SOP4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: MOSFET Insulation voltage: 1.5kV Case: SOP4 Turn-on time: 500µs Turn-off time: 0.5ms |
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TLP3123(F) | TOSHIBA |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; 1.5kV; SOP4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: MOSFET Insulation voltage: 1.5kV Case: SOP4 Turn-on time: 1.2ms Turn-off time: 0.2ms |
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CUS10F30,H3F | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape Max. off-state voltage: 30V Load current: 1A Max. forward impulse current: 5A Case: SOD323 Kind of package: reel; tape Max. forward voltage: 0.43V Mounting: SMD Semiconductor structure: single diode Type of diode: Schottky rectifying |
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TTC0002(Q) | TOSHIBA |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 18A; 180W; TO3PL Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 18A Power dissipation: 180W Case: TO3PL Current gain: 80...160 Mounting: THT Frequency: 30MHz |
на замовлення 543 шт: термін постачання 21-30 дні (днів) |
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SSM3K329R,LF(B | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F Kind of package: reel; tape Power dissipation: 1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±12V Mounting: SMD Case: SOT23F Drain-source voltage: 30V Drain current: 3.5A On-state resistance: 289mΩ Type of transistor: N-MOSFET |
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74VHC238FT(BJ) | TOSHIBA |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,decoder; C²MOS; SMD; TSSOP16; VHC; 0.65mm Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder Technology: C²MOS Mounting: SMD Case: TSSOP16 Manufacturer series: VHC Supply voltage: 2...5.5V DC Kind of package: reel; tape Operating temperature: -40...125°C Terminal pitch: 0.65mm Delay time: 5.5ns |
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| TK65G10N1,RQ(S | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 283A Power dissipation: 156W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 81nC Kind of channel: enhanced |
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74VHC27FT(BJ) | TOSHIBA |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 3; IN: 3; C²MOS; SMD; TSSOP14; VHC; 2÷5.5VDC Type of integrated circuit: digital Kind of gate: NOR Number of channels: triple; 3 Number of inputs: 3 Technology: C²MOS Mounting: SMD Case: TSSOP14 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Delay time: 4.1ns Terminal pitch: 0.65mm |
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SSM3K324R,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; SOT23F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±12V On-state resistance: 109mΩ Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SSM3K333R,LF(B | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 3.4nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 6884 шт: термін постачання 21-30 дні (днів) |
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SSM3K37MFV,L3F | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723 Mounting: SMD Drain-source voltage: 20V Drain current: 0.25A On-state resistance: 5.6Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Case: SOT723 |
на замовлення 14225 шт: термін постачання 21-30 дні (днів) |
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TPHR8504PL,L1Q(M | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 150A; 170W; SOP8A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Power dissipation: 170W Case: SOP8A Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced |
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TK20G60W,RVQ(S | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 165W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced |
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TK20P04M1,RQ(S | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 27W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 27W Case: DPAK Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
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TK62J60W,S1VQ(O | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 61.8A Power dissipation: 400W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced |
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TK650A60F,S4X(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 45W; TO220FP Mounting: THT Case: TO220FP Kind of package: tube Power dissipation: 45W Drain-source voltage: 600V Drain current: 11A On-state resistance: 0.54Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A |
на замовлення 1071 шт: термін постачання 21-30 дні (днів) |
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| TK65E10N1,S1X(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 148A; Idm: 296A; 192W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 148A Pulsed drain current: 296A Power dissipation: 192W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhanced |
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TK65S04N1L,LQ(O | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 65A Power dissipation: 107W Case: DPAK Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
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| TK6P60W,RVQ(S | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.2A Pulsed drain current: 24.8A Power dissipation: 60W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: SMD Gate charge: 12nC Kind of channel: enhanced |
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| TK6Q60W,S1VQ(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.2A Pulsed drain current: 24.8A Power dissipation: 60W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
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| TK6R7P06PL,RQ(S2 | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 74A; Idm: 190A; 66W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 74A Pulsed drain current: 190A Power dissipation: 66W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 26nC Kind of channel: enhanced |
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TK16E60W,S1VX(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Power dissipation: 130W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
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TLP267J(E(T | TOSHIBA |
Category: Optotriacs Description: Optotriac; 3.75kV; Uout: 600V; SO6; Ch: 1 Output voltage: 600V Number of channels: 1 Case: SO6 Mounting: SMD Insulation voltage: 3.75kV Trigger current: 3mA Max. off-state voltage: 5V Kind of output: without zero voltage crossing driver Type of optocoupler: optotriac |
на замовлення 8111 шт: термін постачання 21-30 дні (днів) |
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TLP227G(F) | TOSHIBA |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 2.5kV; DIP4; TLP227G Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: MOSFET Insulation voltage: 2.5kV Case: DIP4 Turn-on time: 0.3ms Turn-off time: 0.1ms Manufacturer series: TLP227G |
товар відсутній |
| 2SC2713-BL(TE85L,F |
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.15W; SC59
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC59
Frequency: 100MHz
Collector-emitter voltage: 120V
Current gain: 350...700
Collector current: 0.1A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.15W; SC59
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC59
Frequency: 100MHz
Collector-emitter voltage: 120V
Current gain: 350...700
Collector current: 0.1A
Type of transistor: NPN
на замовлення 2370 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 6.62 грн |
| 70+ | 5.49 грн |
| 210+ | 4.25 грн |
| 560+ | 4.03 грн |
| 2SC2713-GR,LF(T |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.15W; SC59
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC59
Frequency: 100MHz
Collector-emitter voltage: 120V
Current gain: 200...400
Collector current: 0.1A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.15W; SC59
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC59
Frequency: 100MHz
Collector-emitter voltage: 120V
Current gain: 200...400
Collector current: 0.1A
Type of transistor: NPN
на замовлення 12880 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 7.81 грн |
| 80+ | 4.6 грн |
| 230+ | 3.79 грн |
| 630+ | 3.58 грн |
| 3000+ | 3.44 грн |
| 74LCX08FT(AE) |
|
Виробник: TOSHIBA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 1.65÷3.6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Delay time: 6.5ns
Family: LCX
Terminal pitch: 0.65mm
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 1.65÷3.6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Delay time: 6.5ns
Family: LCX
Terminal pitch: 0.65mm
товар відсутній
| TLP104(E(T |
|
Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; 3.75kV; 1Mbps; SO6; 15kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Insulation voltage: 3.75kV
Transfer rate: 1Mbps
Case: SO6
Slew rate: 15kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; 3.75kV; 1Mbps; SO6; 15kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Insulation voltage: 3.75kV
Transfer rate: 1Mbps
Case: SO6
Slew rate: 15kV/μs
на замовлення 75 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 62.23 грн |
| 17+ | 50.52 грн |
| 47+ | 47.59 грн |
| TLP104(TPL.E(T |
|
Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
товар відсутній
| TLP104(TPR.E(T |
|
Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
товар відсутній
| TLP104(V4-TPL.E(T |
|
Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
товар відсутній
| GT40WR21,Q(O |
|
Виробник: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 1.8kV
Collector current: 40A
Power dissipation: 375W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 950ns
Turn-off time: 570ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 1.8kV
Collector current: 40A
Power dissipation: 375W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 950ns
Turn-off time: 570ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 86 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 861 грн |
| 2+ | 601.82 грн |
| 4+ | 568.88 грн |
| TPHR9003NL |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 78W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 78W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 78W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 78W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 351 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 197.12 грн |
| 5+ | 164 грн |
| 7+ | 134.71 грн |
| 18+ | 127.39 грн |
| CUS520,H3F(T |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: SOD323
Max. off-state voltage: 30V
Max. load current: 0.3A
Max. forward voltage: 0.6V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: SOD323
Max. off-state voltage: 30V
Max. load current: 0.3A
Max. forward voltage: 0.6V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
на замовлення 1470 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.2 грн |
| 160+ | 2.34 грн |
| 500+ | 2.1 грн |
| 510+ | 1.68 грн |
| 1395+ | 1.58 грн |
| DF5A5.6F(TE85L,F) |
|
Виробник: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 0.2W; unidirectional,common anode; SOT25
Number of channels: 4
Mounting: SMD
Case: SOT25
Kind of package: reel; tape
Breakdown voltage: 5.6V
Leakage current: 1µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.2W
Semiconductor structure: common anode; unidirectional
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 0.2W; unidirectional,common anode; SOT25
Number of channels: 4
Mounting: SMD
Case: SOT25
Kind of package: reel; tape
Breakdown voltage: 5.6V
Leakage current: 1µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.2W
Semiconductor structure: common anode; unidirectional
товар відсутній
| TLP5754H(D4TP4.E(T |
|
Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 35kV/μs
Number of pins: 6
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 35kV/μs
Number of pins: 6
товар відсутній
| TLP5754H(TP.E(T |
|
Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 35kV/μs
Number of pins: 6
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 35kV/μs
Number of pins: 6
товар відсутній
| TLX9185A(TEEGBTF(O |
|
Виробник: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; Uce: 80V; SO6; Uout: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Collector-emitter voltage: 80V
Case: SO6
Turn-on time: 5µs
Turn-off time: 5µs
Output voltage: 6V
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; Uce: 80V; SO6; Uout: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Collector-emitter voltage: 80V
Case: SO6
Turn-on time: 5µs
Turn-off time: 5µs
Output voltage: 6V
товар відсутній
| TK34E10N1,S1X(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 103W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 103W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 812 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.5 грн |
| 10+ | 54.18 грн |
| 17+ | 52.71 грн |
| 45+ | 49.79 грн |
| 50+ | 49.05 грн |
| SSM6K403TU,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 0.5W
Case: UF6
Gate-source voltage: ±10V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 0.5W
Case: UF6
Gate-source voltage: ±10V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 22.31 грн |
| 27+ | 13.91 грн |
| 81+ | 10.68 грн |
| 221+ | 10.1 грн |
| SSM3K72KCT,L3F(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C
Mounting: SMD
Case: CST3C
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.4A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.39nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C
Mounting: SMD
Case: CST3C
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.4A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.39nC
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| SSM3J328R,LF(T |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 88.4mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 88.4mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SSM3J334R,LF(T |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 5.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 5.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 2310 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.41 грн |
| 50+ | 8.05 грн |
| 100+ | 7.1 грн |
| 130+ | 6.66 грн |
| 355+ | 6.3 грн |
| SSM3K341R,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 5178 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.04 грн |
| 16+ | 23.28 грн |
| 25+ | 20.43 грн |
| 49+ | 17.72 грн |
| 133+ | 16.77 грн |
| SSM3K36FS,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM
Mounting: SMD
Case: SSM
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 1.52Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 1A
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM
Mounting: SMD
Case: SSM
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 1.52Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 1A
Gate-source voltage: ±10V
товар відсутній
| SSM6J502NU,LF(T |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 60.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 24.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 60.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 24.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
товар відсутній
| SSM6J503NU,LF(T |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 89.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 89.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
товар відсутній
| SSM6K504NU,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 18A
Power dissipation: 1.25W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 18A
Power dissipation: 1.25W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 1678 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11.2 грн |
| 45+ | 8.71 грн |
| 100+ | 7.83 грн |
| 115+ | 7.69 грн |
| 310+ | 7.25 грн |
| SSM3K35MFV,L3F(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.18A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.18A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
товар відсутній
| SSM3K7002KFU,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 38125 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.44 грн |
| 100+ | 3.79 грн |
| 250+ | 3.42 грн |
| 310+ | 2.76 грн |
| 855+ | 2.61 грн |
| TBC857B,LM(T |
|
Виробник: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.32W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.32W
Case: SOT23
Current gain: 210...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.32W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.32W
Case: SOT23
Current gain: 210...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
товар відсутній
| TDTC114E,LM(T |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
на замовлення 7210 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 160+ | 2.6 грн |
| 220+ | 1.69 грн |
| 500+ | 1.49 грн |
| 660+ | 1.31 грн |
| 1800+ | 1.24 грн |
| TDTC114Y,LM(T |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 7910 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 155+ | 2.6 грн |
| 220+ | 1.7 грн |
| 500+ | 1.49 грн |
| 655+ | 1.31 грн |
| 1795+ | 1.24 грн |
| TDTC124E,LM(T |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.32W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.32W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 8050 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 160+ | 2.6 грн |
| 220+ | 1.69 грн |
| 500+ | 1.49 грн |
| 670+ | 1.3 грн |
| 1830+ | 1.23 грн |
| TDTC144E,LM(T |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.32W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.32W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 10660 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 160+ | 2.6 грн |
| 220+ | 1.69 грн |
| 500+ | 1.49 грн |
| 660+ | 1.3 грн |
| 1820+ | 1.23 грн |
| 74LCX125FT(AE) |
|
Виробник: TOSHIBA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Delay time: 7ns
Terminal pitch: 0.65mm
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Delay time: 7ns
Terminal pitch: 0.65mm
товар відсутній
| 74LCX126FT(AE) |
|
Виробник: TOSHIBA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...3.6V DC
Case: TSSOP14
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Delay time: 7ns
Kind of output: 3-state
Terminal pitch: 0.65mm
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...3.6V DC
Case: TSSOP14
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Delay time: 7ns
Kind of output: 3-state
Terminal pitch: 0.65mm
Manufacturer series: LCX
товар відсутній
| TK3P50D,RQ |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| TLP3115(TP.M.F) |
|
Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; Uinsul: 1.5kV; SOP4; Urmax: 40V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 500µs
Turn-off time: 0.5ms
Max. off-state voltage: 40V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; Uinsul: 1.5kV; SOP4; Urmax: 40V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 500µs
Turn-off time: 0.5ms
Max. off-state voltage: 40V
товар відсутній
| TLP3123(TP.F) |
|
Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; Uinsul: 1.5kV; SOP4; Urmax: 40V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 3ms
Turn-off time: 0.5ms
Max. off-state voltage: 40V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; Uinsul: 1.5kV; SOP4; Urmax: 40V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 3ms
Turn-off time: 0.5ms
Max. off-state voltage: 40V
товар відсутній
| TLP3114(F) |
|
Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; 1.5kV; SOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 500µs
Turn-off time: 0.5ms
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; 1.5kV; SOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 500µs
Turn-off time: 0.5ms
товар відсутній
| TLP3123(F) |
|
Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; 1.5kV; SOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 1.2ms
Turn-off time: 0.2ms
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; 1.5kV; SOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 1.2ms
Turn-off time: 0.2ms
товар відсутній
| CUS10F30,H3F |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 5A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 0.43V
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 5A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 0.43V
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
товар відсутній
| TTC0002(Q) |
|
Виробник: TOSHIBA
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 18A; 180W; TO3PL
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 18A
Power dissipation: 180W
Case: TO3PL
Current gain: 80...160
Mounting: THT
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 18A; 180W; TO3PL
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 18A
Power dissipation: 180W
Case: TO3PL
Current gain: 80...160
Mounting: THT
Frequency: 30MHz
на замовлення 543 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.77 грн |
| 5+ | 190.36 грн |
| 7+ | 136.18 грн |
| 18+ | 128.86 грн |
| SSM3K329R,LF(B |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F
Kind of package: reel; tape
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT23F
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 289mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F
Kind of package: reel; tape
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT23F
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 289mΩ
Type of transistor: N-MOSFET
товар відсутній
| 74VHC238FT(BJ) |
|
Виробник: TOSHIBA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; C²MOS; SMD; TSSOP16; VHC; 0.65mm
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Technology: C²MOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Terminal pitch: 0.65mm
Delay time: 5.5ns
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; C²MOS; SMD; TSSOP16; VHC; 0.65mm
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Technology: C²MOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Terminal pitch: 0.65mm
Delay time: 5.5ns
товар відсутній
| TK65G10N1,RQ(S |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 283A
Power dissipation: 156W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 283A
Power dissipation: 156W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhanced
товар відсутній
| 74VHC27FT(BJ) |
|
Виробник: TOSHIBA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; C²MOS; SMD; TSSOP14; VHC; 2÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Technology: C²MOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Delay time: 4.1ns
Terminal pitch: 0.65mm
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; C²MOS; SMD; TSSOP14; VHC; 2÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Technology: C²MOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Delay time: 4.1ns
Terminal pitch: 0.65mm
товар відсутній
| SSM3K324R,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SSM3K333R,LF(B |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 6884 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11.04 грн |
| 45+ | 8.57 грн |
| 100+ | 7.61 грн |
| 140+ | 6.24 грн |
| 375+ | 5.9 грн |
| SSM3K37MFV,L3F |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.25A
On-state resistance: 5.6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Case: SOT723
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.25A
On-state resistance: 5.6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Case: SOT723
на замовлення 14225 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.32 грн |
| 95+ | 3.9 грн |
| 105+ | 3.51 грн |
| 320+ | 2.67 грн |
| 880+ | 2.53 грн |
| TPHR8504PL,L1Q(M |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; 170W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 170W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; 170W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 170W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| TK20G60W,RVQ(S |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| TK20P04M1,RQ(S |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 27W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 27W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 27W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 27W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| TK62J60W,S1VQ(O |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Power dissipation: 400W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Power dissipation: 400W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TK650A60F,S4X(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Power dissipation: 45W
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 0.54Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Power dissipation: 45W
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 0.54Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
на замовлення 1071 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.29 грн |
| 4+ | 120.8 грн |
| 10+ | 91.52 грн |
| 26+ | 86.39 грн |
| TK65E10N1,S1X(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 148A; Idm: 296A; 192W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 296A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 148A; Idm: 296A; 192W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 296A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TK65S04N1L,LQ(O |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| TK6P60W,RVQ(S |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 24.8A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 24.8A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhanced
товар відсутній
| TK6Q60W,S1VQ(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 24.8A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 24.8A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TK6R7P06PL,RQ(S2 |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; Idm: 190A; 66W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Pulsed drain current: 190A
Power dissipation: 66W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; Idm: 190A; 66W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Pulsed drain current: 190A
Power dissipation: 66W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
товар відсутній
| TK16E60W,S1VX(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 130W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 130W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TLP267J(E(T |
|
Виробник: TOSHIBA
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 600V; SO6; Ch: 1
Output voltage: 600V
Number of channels: 1
Case: SO6
Mounting: SMD
Insulation voltage: 3.75kV
Trigger current: 3mA
Max. off-state voltage: 5V
Kind of output: without zero voltage crossing driver
Type of optocoupler: optotriac
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 600V; SO6; Ch: 1
Output voltage: 600V
Number of channels: 1
Case: SO6
Mounting: SMD
Insulation voltage: 3.75kV
Trigger current: 3mA
Max. off-state voltage: 5V
Kind of output: without zero voltage crossing driver
Type of optocoupler: optotriac
на замовлення 8111 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.96 грн |
| 10+ | 40.27 грн |
| 24+ | 35.36 грн |
| 66+ | 33.39 грн |
| 250+ | 32.87 грн |
| TLP227G(F) |
|
Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 2.5kV; DIP4; TLP227G
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 2.5kV
Case: DIP4
Turn-on time: 0.3ms
Turn-off time: 0.1ms
Manufacturer series: TLP227G
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 2.5kV; DIP4; TLP227G
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 2.5kV
Case: DIP4
Turn-on time: 0.3ms
Turn-off time: 0.1ms
Manufacturer series: TLP227G
товар відсутній