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CUS10F30,H3F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.8 грн |
6000+ | 3.39 грн |
9000+ | 2.82 грн |
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Технічний опис CUS10F30,H3F Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A USC, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 170pF @ 0V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: USC, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A, Current - Reverse Leakage @ Vr: 50 µA @ 30 V.
Інші пропозиції CUS10F30,H3F за ціною від 2.32 грн до 23.62 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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CUS10F30,H3F | Виробник : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1A USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 170pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
на замовлення 28809 шт: термін постачання 21-31 дні (днів) |
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CUS10F30,H3F | Виробник : Toshiba |
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на замовлення 25926 шт: термін постачання 21-30 дні (днів) |
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CUS10F30,H3F | Виробник : TOSHIBA |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape Max. off-state voltage: 30V Load current: 1A Max. forward impulse current: 5A Case: SOD323 Kind of package: reel; tape Max. forward voltage: 0.43V Mounting: SMD Semiconductor structure: single diode Type of diode: Schottky rectifying кількість в упаковці: 5 шт |
товар відсутній |
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CUS10F30,H3F | Виробник : TOSHIBA |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape Max. off-state voltage: 30V Load current: 1A Max. forward impulse current: 5A Case: SOD323 Kind of package: reel; tape Max. forward voltage: 0.43V Mounting: SMD Semiconductor structure: single diode Type of diode: Schottky rectifying |
товар відсутній |