| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RN1411(TE85L,F) | TOSHIBA |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 10kΩ Mounting: SMD Case: SC59 Kind of package: reel; tape Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Frequency: 250MHz |
на замовлення 1585 шт: термін постачання 21-30 дні (днів) |
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RN1604(TE85L,F) | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.3W; SM6; R1: 2.2kΩ Mounting: SMD Case: SM6 Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.3W Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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TK72E12N1,S1X(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 72A; 255W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 72A Power dissipation: 255W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhanced |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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SSM3K16FU(TE85L,F) | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.1A; 150mW; SC70 Mounting: SMD Case: SC70 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.1A On-state resistance: 15Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V |
товар відсутній |
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TK9J90E,S1E(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 9A; 250W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 9A Power dissipation: 250W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced |
на замовлення 379 шт: термін постачання 21-30 дні (днів) |
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TK10E60W,S1VX(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 100W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.7A Power dissipation: 100W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| TK12Q60W,S1VQ(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; Idm: 46A; 100W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11.5A Pulsed drain current: 46A Power dissipation: 100W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.34Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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TK31E60W,S1VX(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 230W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30.8A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 73mΩ Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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TK30E06N1,S1X(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 53W; TO220AB Mounting: THT Drain-source voltage: 60V Drain current: 30A On-state resistance: 12.2mΩ Type of transistor: N-MOSFET Power dissipation: 53W Polarisation: unipolar Kind of package: tube Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220AB |
товар відсутній |
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TK32E12N1,S1X(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 32A; 98W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 32A Power dissipation: 98W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 13.8mΩ Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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TK35E08N1,S1X(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 72W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 55A Power dissipation: 72W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced |
на замовлення 112 шт: термін постачання 21-30 дні (днів) |
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| DF5A3.6JE,LM(T | TOSHIBA |
Category: Transil diodes - arrays Description: Diode: TVS array; 3.6V; 0.1W; unidirectional,common anode; SOT553 Type of diode: TVS array Semiconductor structure: common anode; unidirectional Case: SOT553 Mounting: SMD Features of semiconductor devices: ESD protection Kind of package: reel; tape Leakage current: 10µA Peak pulse power dissipation: 0.1W Breakdown voltage: 3.6V Number of channels: 4 |
товар відсутній |
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TK31V60W5,LVQ(S | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 240W; DFN; 8x8mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30.8A Power dissipation: 240W Case: DFN Gate-source voltage: ±30V On-state resistance: 109mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 8x8mm |
товар відсутній |
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| TLP383(GRH-TPL.E(T | TOSHIBA |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SO6L Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 150-300%@5mA Collector-emitter voltage: 80V Case: SO6L Turn-on time: 3µs Turn-off time: 3µs |
товар відсутній |
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| TK18A30D,S5X(M | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 18A; 45W; SC67 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 18A Power dissipation: 45W Case: SC67 Gate-source voltage: ±20V On-state resistance: 139mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| TLP5832(D4-TP.E(O | TOSHIBA |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO8L; 25kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: totem pole Insulation voltage: 5kV Case: SO8L Turn-on time: 15ns Turn-off time: 8ns Slew rate: 25kV/μs |
товар відсутній |
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| TLP5832(D4.E(O | TOSHIBA |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO8L; 25kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: totem pole Insulation voltage: 5kV Case: SO8L Turn-on time: 15ns Turn-off time: 8ns Slew rate: 25kV/μs |
товар відсутній |
| RN1411(TE85L,F) |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Frequency: 250MHz
на замовлення 1585 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 8.49 грн |
| 145+ | 2.51 грн |
| 160+ | 2.21 грн |
| 500+ | 2.07 грн |
| RN1604(TE85L,F) |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.3W; SM6; R1: 2.2kΩ
Mounting: SMD
Case: SM6
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.3W; SM6; R1: 2.2kΩ
Mounting: SMD
Case: SM6
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.77 грн |
| 60+ | 6.2 грн |
| 100+ | 5.49 грн |
| 175+ | 4.79 грн |
| 475+ | 4.51 грн |
| TK72E12N1,S1X(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; 255W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 72A
Power dissipation: 255W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; 255W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 72A
Power dissipation: 255W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.57 грн |
| 9+ | 99.99 грн |
| 23+ | 95.06 грн |
| SSM3K16FU(TE85L,F) |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.1A; 150mW; SC70
Mounting: SMD
Case: SC70
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.1A
On-state resistance: 15Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.1A; 150mW; SC70
Mounting: SMD
Case: SC70
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.1A
On-state resistance: 15Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
товар відсутній
| TK9J90E,S1E(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9A; 250W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9A
Power dissipation: 250W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9A; 250W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9A
Power dissipation: 250W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 379 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 257.08 грн |
| 5+ | 164.78 грн |
| 14+ | 155.62 грн |
| TK10E60W,S1VX(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 100W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Power dissipation: 100W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 100W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Power dissipation: 100W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TK12Q60W,S1VQ(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; Idm: 46A; 100W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 100W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; Idm: 46A; 100W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 100W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TK31E60W,S1VX(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30.8A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30.8A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TK30E06N1,S1X(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 53W; TO220AB
Mounting: THT
Drain-source voltage: 60V
Drain current: 30A
On-state resistance: 12.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 53W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 53W; TO220AB
Mounting: THT
Drain-source voltage: 60V
Drain current: 30A
On-state resistance: 12.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 53W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
товар відсутній
| TK32E12N1,S1X(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 32A; 98W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 32A
Power dissipation: 98W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.8mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 32A; 98W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 32A
Power dissipation: 98W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.8mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TK35E08N1,S1X(S |
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 72W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Power dissipation: 72W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 72W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Power dissipation: 72W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 112 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 65.22 грн |
| 8+ | 49.5 грн |
| 10+ | 43.45 грн |
| 22+ | 38.45 грн |
| 59+ | 36.34 грн |
| DF5A3.6JE,LM(T |
|
Виробник: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.6V; 0.1W; unidirectional,common anode; SOT553
Type of diode: TVS array
Semiconductor structure: common anode; unidirectional
Case: SOT553
Mounting: SMD
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Leakage current: 10µA
Peak pulse power dissipation: 0.1W
Breakdown voltage: 3.6V
Number of channels: 4
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.6V; 0.1W; unidirectional,common anode; SOT553
Type of diode: TVS array
Semiconductor structure: common anode; unidirectional
Case: SOT553
Mounting: SMD
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Leakage current: 10µA
Peak pulse power dissipation: 0.1W
Breakdown voltage: 3.6V
Number of channels: 4
товар відсутній
| TK31V60W5,LVQ(S |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 240W; DFN; 8x8mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30.8A
Power dissipation: 240W
Case: DFN
Gate-source voltage: ±30V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 8x8mm
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 240W; DFN; 8x8mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30.8A
Power dissipation: 240W
Case: DFN
Gate-source voltage: ±30V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 8x8mm
товар відсутній
| TLP383(GRH-TPL.E(T |
|
Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SO6L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 150-300%@5mA
Collector-emitter voltage: 80V
Case: SO6L
Turn-on time: 3µs
Turn-off time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SO6L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 150-300%@5mA
Collector-emitter voltage: 80V
Case: SO6L
Turn-on time: 3µs
Turn-off time: 3µs
товар відсутній
| TK18A30D,S5X(M |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 18A; 45W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 18A
Power dissipation: 45W
Case: SC67
Gate-source voltage: ±20V
On-state resistance: 139mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 18A; 45W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 18A
Power dissipation: 45W
Case: SC67
Gate-source voltage: ±20V
On-state resistance: 139mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TLP5832(D4-TP.E(O |
|
Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO8L; 25kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO8L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 25kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO8L; 25kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO8L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 25kV/μs
товар відсутній
| TLP5832(D4.E(O |
|
Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO8L; 25kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO8L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 25kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO8L; 25kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO8L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 25kV/μs
товар відсутній