RSQ035P03FRATR ROHM SEMICONDUCTOR


Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис RSQ035P03FRATR ROHM SEMICONDUCTOR

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -3.5A, Pulsed drain current: -14A, Power dissipation: 1.25W, Case: TSMT6, Gate-source voltage: ±20V, On-state resistance: 95mΩ, Mounting: SMD, Gate charge: 9.2nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.

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RSQ035P03FRATR Виробник : ROHM SEMICONDUCTOR Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній