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SCS210AJHRTLL Rohm Semiconductor
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
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36+ | 337.01 грн |
38+ | 322.52 грн |
50+ | 310.24 грн |
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Технічний опис SCS210AJHRTLL Rohm Semiconductor
Description: DIODE SIL CARB 650V 10A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 365pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-263AB, Operating Temperature - Junction: 175°C (Max), Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10, Voltage Coupled to Current - Reverse Leakage @ Vr: 600, Current - Reverse Leakage @ Vr: 200 µA @ 600 V, Reverse Recovery Time (trr): 0 ns, Voltage - DC Reverse (Vr) (Max): 650 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SCS210AJHRTLL за ціною від 248.81 грн до 537.1 грн
Фото | Назва | Виробник | Інформація |
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SCS210AJHRTLL | Виробник : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 365pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 200 µA @ 600 V Reverse Recovery Time (trr): 0 ns Voltage - DC Reverse (Vr) (Max): 650 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 951 шт: термін постачання 21-31 дні (днів) |
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SCS210AJHRTLL | Виробник : ROHM Semiconductor |
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на замовлення 904 шт: термін постачання 21-30 дні (днів) |
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SCS210AJHRTLL | Виробник : Rohm Semiconductor |
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на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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SCS210AJHRTLL | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263AB; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO263AB Max. forward voltage: 1.63V Max. load current: 45A Leakage current: 0.2mA Max. forward impulse current: 150A Kind of package: reel; tape Power dissipation: 83W кількість в упаковці: 1 шт |
товар відсутній |
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SCS210AJHRTLL | Виробник : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 365pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 200 µA @ 600 V Reverse Recovery Time (trr): 0 ns Voltage - DC Reverse (Vr) (Max): 650 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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SCS210AJHRTLL | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263AB; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO263AB Max. forward voltage: 1.63V Max. load current: 45A Leakage current: 0.2mA Max. forward impulse current: 150A Kind of package: reel; tape Power dissipation: 83W |
товар відсутній |