RGT50NL65DGTL Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: IGBT TRENCH FIELD 650V 48A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 123.21 грн |
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Технічний опис RGT50NL65DGTL Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 48A LPDS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: LPDS, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/88ns, Test Condition: 400V, 25A, 10Ohm, 15V, Gate Charge: 49 nC, Part Status: Active, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 194 W.
Інші пропозиції RGT50NL65DGTL за ціною від 110.75 грн до 258.41 грн
| Фото | Назва | Виробник | Інформація |
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RGT50NL65DGTL | Виробник : Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 48A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 194 W |
на замовлення 1382 шт: термін постачання 21-31 дні (днів) |
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RGT50NL65DGTL | Виробник : ROHM Semiconductor |
IGBT Transistors RGT50NL65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder. |
на замовлення 1125 шт: термін постачання 21-30 дні (днів) |
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| RGT50NL65DGTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO263 Mounting: SMD Type of transistor: IGBT Power dissipation: 97W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 49nC Case: TO263 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 75A Turn-on time: 65ns Turn-off time: 210ns кількість в упаковці: 1 шт |
товар відсутній |
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| RGT50NL65DGTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO263 Mounting: SMD Type of transistor: IGBT Power dissipation: 97W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 49nC Case: TO263 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 75A Turn-on time: 65ns Turn-off time: 210ns |
товар відсутній |