RS3E180ATTB1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
Description: MOSFET P-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 77.4 грн |
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Технічний опис RS3E180ATTB1 Rohm Semiconductor
Description: ROHM - RS3E180ATTB1 - Leistungs-MOSFET, p-Kanal, 30 V, 18 A, 0.0041 ohm, SOP, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30, Dauer-Drainstrom Id: 18, hazardous: false, Qualifikation: -, MSL: -, usEccn: EAR99, Verlustleistung Pd: 2, Gate-Source-Schwellenspannung, max.: 2.5, euEccn: NLR, Verlustleistung: 2, Bauform - Transistor: SOP, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 8, Produktpalette: -, Wandlerpolarität: p-Kanal, Kanaltyp: p-Kanal, Betriebswiderstand, Rds(on): 0.0041, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.0041, SVHC: Lead (10-Jun-2022).
Інші пропозиції RS3E180ATTB1 за ціною від 75.12 грн до 242.78 грн
Фото | Назва | Виробник | Інформація |
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RS3E180ATTB1 | Виробник : ROHM Semiconductor | MOSFETs RS3E180AT is a power MOSFET for switching applications. |
на замовлення 3063 шт: термін постачання 21-30 дні (днів) |
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RS3E180ATTB1 | Виробник : Rohm Semiconductor |
Description: MOSFET P-CH 30V 18A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 5mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V |
на замовлення 4244 шт: термін постачання 21-31 дні (днів) |
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RS3E180ATTB1 | Виробник : ROHM |
Description: ROHM - RS3E180ATTB1 - Leistungs-MOSFET, p-Kanal, 30 V, 18 A, 0.0041 ohm, SOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 18 hazardous: false Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 2 Gate-Source-Schwellenspannung, max.: 2.5 euEccn: NLR Verlustleistung: 2 Bauform - Transistor: SOP Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.0041 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.0041 SVHC: Lead (10-Jun-2022) |
товар відсутній |
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RS3E180ATTB1 | Виробник : ROHM |
Description: ROHM - RS3E180ATTB1 - Leistungs-MOSFET, p-Kanal, 30 V, 18 A, 0.0041 ohm, SOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 18 hazardous: false Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 2 Gate-Source-Schwellenspannung, max.: 2.5 euEccn: NLR Verlustleistung: 2 Bauform - Transistor: SOP Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.0041 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.0041 SVHC: Lead (10-Jun-2022) |
товар відсутній |
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RS3E180ATTB1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -72A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -18A Pulsed drain current: -72A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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RS3E180ATTB1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -72A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -18A Pulsed drain current: -72A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |