UMG8NTR ROHM SEMICONDUCTOR
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common emitter
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common emitter
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
на замовлення 705 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
65+ | 6.25 грн |
95+ | 3.97 грн |
250+ | 3.5 грн |
285+ | 3.03 грн |
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Технічний опис UMG8NTR ROHM SEMICONDUCTOR
Description: TRANS 2NPN PREBIAS 0.15W UMT5, Packaging: Tape & Reel (TR), Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: UMT5, Part Status: Active.
Інші пропозиції UMG8NTR за ціною від 3.44 грн до 30.53 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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UMG8NTR | Виробник : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88A; SOT353 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Semiconductor structure: common emitter Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 5 шт |
на замовлення 705 шт: термін постачання 14-21 дні (днів) |
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UMG8NTR | Виробник : Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W UMT5 Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: UMT5 Part Status: Active |
на замовлення 2110 шт: термін постачання 21-31 дні (днів) |
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UMG8NTR | Виробник : ROHM Semiconductor | Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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UMG8NTR | Виробник : Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W UMT5 Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: UMT5 Part Status: Active |
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