| Фото | Назва | Виробник | Інформація |
Доступність |
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NVF3055L108T1G | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 206 шт: термін постачання 14-21 дні (днів) |
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| NVH4L040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 162.5A Power dissipation: 446W Case: TO247 Gate-source voltage: ±30V On-state resistance: 33.8mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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NVHL020N090SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 83A Pulsed drain current: 472A Power dissipation: 251W Case: TO247-3 Gate-source voltage: -10...19V On-state resistance: 28mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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NVJD4401NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.14W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.46A Power dissipation: 0.14W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 0.375Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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NVJD5121NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.212A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
на замовлення 210 шт: термін постачання 14-21 дні (днів) |
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NVMFD5877NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 12W; DFN8; 5x6mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 12W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm кількість в упаковці: 3000 шт |
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NVMFD5C462NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 52A; 25W; DFN8; 5x6mm Mounting: SMD Case: DFN8 Kind of package: reel; tape Power dissipation: 25W Dimensions: 5x6mm Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 52A On-state resistance: 4.7mΩ Polarisation: unipolar Kind of channel: enhanced |
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NVMFS5113PLT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -45A Power dissipation: 75W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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NVMFS5A160PLZT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; 100A; 200W; DFN5x6 Mounting: SMD Drain current: 100A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN5x6 On-state resistance: 7.7mΩ Power dissipation: 200W Polarisation: unipolar кількість в упаковці: 1500 шт |
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NVMFS5C430NLAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 53W; DFN5x6 Mounting: SMD Case: DFN5x6 Kind of package: reel; tape Power dissipation: 53W Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.4mΩ Drain current: 140A Drain-source voltage: 40V Gate charge: 32nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 900A кількість в упаковці: 1 шт |
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NVMFS5C604NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Case: DFN5x6 Drain-source voltage: 60V Drain current: 203A On-state resistance: 1.2mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Kind of package: reel; tape кількість в упаковці: 1 шт |
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NVMFS6H800NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 100W; SO8 Mounting: SMD Drain current: 20A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 On-state resistance: 2.1mΩ Power dissipation: 100W Polarisation: unipolar кількість в упаковці: 1 шт |
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| NVMFS6H818NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5 Mounting: SMD Drain current: 87A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN5 On-state resistance: 3.7mΩ Pulsed drain current: 900A Power dissipation: 68W Gate charge: 46nC Polarisation: unipolar кількість в упаковці: 1500 шт |
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NVR4003NT3G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.37A; 0.69W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 0.37A On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 0.69W Kind of package: reel; tape кількість в упаковці: 5 шт |
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NVR4501NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Application: automotive industry Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 10A Gate charge: 6nC Drain-source voltage: 20V Drain current: 2.4A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Power dissipation: 1.25W Kind of package: reel; tape кількість в упаковці: 5 шт |
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NVR5124PLT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.67A; 0.19W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.67A Power dissipation: 0.19W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1583 шт: термін постачання 14-21 дні (днів) |
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NVR5198NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23 Mounting: SMD Application: automotive industry Power dissipation: 0.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 27A Case: SOT23 Drain-source voltage: 60V Drain current: 1.2A On-state resistance: 0.205Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 1860 шт: термін постачання 14-21 дні (днів) |
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| NVTFS5116PLTAG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -10A Power dissipation: 1.6W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1500 шт: термін постачання 14-21 дні (днів) |
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NVTJD4001NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.18A Power dissipation: 0.272W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2940 шт: термін постачання 14-21 дні (днів) |
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NVTR0202PLT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1A; 225mW; SOT23 On-state resistance: 1.1Ω Type of transistor: P-MOSFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.18nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -1A Mounting: SMD Case: SOT23 Drain-source voltage: -20V Drain current: -0.4A кількість в упаковці: 1 шт |
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NVTR4502PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.56A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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NVTR4503NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 1.5A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 0.73W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5 шт |
на замовлення 2975 шт: термін постачання 14-21 дні (днів) |
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| NXH020U90MNF2PTG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W Electrical mounting: Press-in PCB Mechanical mounting: screw Power dissipation: 352W Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -8...18V Topology: NTC thermistor; Vienna Rectifier Pulsed drain current: 447A Case: PIM20 Semiconductor structure: diode/transistor Drain-source voltage: 900V Drain current: 149A On-state resistance: 10mΩ кількість в упаковці: 1 шт |
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| NZQA6V8AXV5T1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: diode arrays; 6.8V; 1.6A; 0.38W; SOT553; Ch: 4; reel,tape; ±5% Type of diode: diode arrays Peak pulse power dissipation: 0.38W Max. off-state voltage: 4.3V Breakdown voltage: 6.8V Max. forward impulse current: 1.6A Tolerance: ±5% Case: SOT553 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 4 кількість в упаковці: 5 шт |
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NZT560A | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 75MHz кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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NZT605 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 110V; 1.5A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 110V Collector current: 1.5A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz кількість в упаковці: 1 шт |
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NZT7053 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223 Polarisation: bipolar Case: SOT223 Kind of package: reel; tape Kind of transistor: Darlington Mounting: SMD Frequency: 200MHz Collector-emitter voltage: 100V Collector current: 1.5A Type of transistor: NPN Power dissipation: 1W кількість в упаковці: 1 шт |
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| ONBB4AMGEVB | ONSEMI |
ONBB4AMGEVB-ONS Unclassified |
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PACDN042Y3R | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; SOT23-3; Features: ESD protection; Ch: 2 Type of diode: TVS array Mounting: SMD Case: SOT23-3 Max. off-state voltage: 5.5V Features of semiconductor devices: ESD protection Number of channels: 2 Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 1114 шт: термін постачання 14-21 дні (днів) |
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| PCA9306AMUTCG | ONSEMI |
Category: Level translators Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Supply voltage: 1...3.6V DC Mounting: SMD Case: UQFN8 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: auto-direction sensing кількість в упаковці: 1 шт |
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PCA9306DTR2G | ONSEMI |
Category: Level translators Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Supply voltage: 1...3.6V DC Mounting: SMD Case: TSSOP8 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Kind of output: open drain кількість в упаковці: 1 шт |
на замовлення 3713 шт: термін постачання 14-21 дні (днів) |
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| PCA9306FMUTAG | ONSEMI |
Category: Level translators Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Supply voltage: 1...3.6V DC Mounting: SMD Case: uDFN8 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Kind of output: open drain кількість в упаковці: 1 шт |
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| PCA9306FMUTCG | ONSEMI |
Category: Level translators Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Supply voltage: 1...3.6V DC Mounting: SMD Case: uDFN8 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Kind of output: open drain кількість в упаковці: 1 шт |
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PCA9306USG | ONSEMI |
Category: Level translators Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Supply voltage: 1...3.6V DC Mounting: SMD Case: US8 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Kind of output: open drain кількість в упаковці: 1 шт |
на замовлення 33 шт: термін постачання 14-21 дні (днів) |
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| PCA9535ECMTTXG | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Interface: I2C; SMBus Kind of package: reel; tape Application: for LED applications Mounting: SMD Frequency: 1MHz Type of integrated circuit: interface Kind of integrated circuit: I/O expander Number of channels: 16 Case: WQFN24 Integrated circuit features: PWM кількість в упаковці: 3000 шт |
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| PCA9535EDWR2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; SO24 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Interface: I2C; SMBus Kind of package: reel; tape Application: for LED applications Mounting: SMD Frequency: 1MHz Type of integrated circuit: interface Kind of integrated circuit: I/O expander Number of channels: 16 Case: SO24 Integrated circuit features: PWM кількість в упаковці: 1000 шт |
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| PIR-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board; Comp: NCS36000 Kit contents: prototype board Interface: GPIO; I2C Kind of connector: Pmod connector Components: NCS36000 development kits accessories features: motion sensor Type of accessories for development kits: expansion board кількість в упаковці: 1 шт |
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PN2222ABU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 1A; 0.625W; TO92 Mounting: THT Case: TO92 Power dissipation: 0.625W Kind of package: bulk Collector-emitter voltage: 40V Collector current: 1A Type of transistor: NPN Polarisation: bipolar кількість в упаковці: 1 шт |
на замовлення 954 шт: термін постачання 14-21 дні (днів) |
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PN2222ATA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 1A; 0.625W; TO92 Mounting: THT Case: TO92 Power dissipation: 0.625W Kind of package: Ammo Pack Collector-emitter voltage: 40V Collector current: 1A Type of transistor: NPN Polarisation: bipolar кількість в упаковці: 1 шт |
на замовлення 890 шт: термін постачання 14-21 дні (днів) |
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PN2222ATF | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 1A; 0.625W; TO92 Mounting: THT Case: TO92 Power dissipation: 0.625W Kind of package: reel; tape Collector-emitter voltage: 40V Collector current: 1A Type of transistor: NPN Polarisation: bipolar кількість в упаковці: 1 шт |
на замовлення 1410 шт: термін постачання 14-21 дні (днів) |
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| POE-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board; Comp: NCP1083 Interface: I2C; I2C - Slave; SPI Kind of connector: pin strips; RJ45 Kit contents: prototype board Components: NCP1083 Type of accessories for development kits: expansion board development kits accessories features: Arduino Shield compatible кількість в упаковці: 1 шт |
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PZT2222AT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 1.5W Case: SOT223 Mounting: SMD Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 630 шт: термін постачання 14-21 дні (днів) |
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PZT2907AT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 1.5W Case: SOT223 Current gain: 50...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz кількість в упаковці: 1 шт |
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PZT2907AT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 1.5W Case: SOT223 Current gain: 50...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz кількість в упаковці: 4000 шт |
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PZT3904T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz кількість в упаковці: 1 шт |
на замовлення 450 шт: термін постачання 14-21 дні (днів) |
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PZTA06 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; SOT223 Mounting: SMD Power dissipation: 1W Polarisation: bipolar Kind of package: reel; tape Case: SOT223 Frequency: 100MHz Collector-emitter voltage: 80V Collector current: 0.5A Type of transistor: NPN кількість в упаковці: 1 шт |
на замовлення 3389 шт: термін постачання 14-21 дні (днів) |
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PZTA28 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 0.8A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz кількість в упаковці: 4000 шт |
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PZTA29 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 0.8A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz кількість в упаковці: 4000 шт |
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PZTA42T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 1.5W Case: SOT223 Mounting: SMD Kind of package: reel; tape кількість в упаковці: 1 шт |
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PZTA56 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 1W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz кількість в упаковці: 4000 шт |
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PZTA64 | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 1W; SOT223 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz кількість в упаковці: 4000 шт |
товар відсутній |
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PZTA92T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 1.5W Case: SOT223 Mounting: SMD Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 1400 шт: термін постачання 14-21 дні (днів) |
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QEB363ZR | ONSEMI |
Category: IR LEDs Description: IR transmitter; 2mm; Gull wing; transparent; 8mW; 24°; THT; 100mA Mounting: THT Operating voltage: 1.6V Viewing angle: 24° LED version: axial; reverse mount Wavelength of peak sensitivity: 940nm Dimensions: 2.5x2.2x3mm Optical power: 8mW Case: Gull wing LED diameter: 2mm Type of diode: IR transmitter LED lens: transparent LED current: 100mA кількість в упаковці: 1 шт |
товар відсутній |
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| QEB373GR | ONSEMI |
Category: IR LEDs Description: IR transmitter; 1.9mm; Gull wing; transparent; 100W; 24°; SMD; 50mA Type of diode: IR transmitter LED diameter: 1.9mm Case: Gull wing LED lens: transparent Optical power: 100W Viewing angle: 24° Wavelength of peak sensitivity: 875nm Mounting: SMD LED current: 50mA Operating voltage: 1.7V кількість в упаковці: 1 шт |
товар відсутній |
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QED123 | ONSEMI |
Category: IR LEDs Description: IR transmitter; 5mm; diffused,orange; 70mW; 16°; λp max: 890nm; THT Type of diode: IR transmitter LED diameter: 5mm LED lens: diffused; orange Optical power: 70mW Viewing angle: 16° Wavelength of peak sensitivity: 890nm Mounting: THT LED current: 100mA Shape: round Operating voltage: 1.7V кількість в упаковці: 1 шт |
на замовлення 4 шт: термін постачання 14-21 дні (днів) |
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| QED123A4R0 | ONSEMI |
Category: IR LEDs Description: IR transmitter; 5mm; diffused,violet; 200W; 16°; λp max: 890nm; THT Mounting: THT LED diameter: 5mm Type of diode: IR transmitter LED lens: diffused; violet LED current: 100mA Viewing angle: 16° Wavelength of peak sensitivity: 890nm Optical power: 200W Operating voltage: 1.7V кількість в упаковці: 1 шт |
товар відсутній |
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QED223 | ONSEMI |
Category: IR LEDs Description: IR transmitter; 5mm; diffused,violet; 25mW; 30°; λp max: 890nm; THT Mounting: THT Operating voltage: 1.7V LED diameter: 5mm Type of diode: IR transmitter LED lens: diffused; violet LED current: 100mA Viewing angle: 30° Wavelength of peak sensitivity: 890nm Optical power: 25mW Shape: round кількість в упаковці: 1 шт |
на замовлення 189 шт: термін постачання 14-21 дні (днів) |
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| QED223A4R0 | ONSEMI |
Category: IR LEDs Description: IR transmitter; 5mm; diffused,violet; 200W; 30°; λp max: 890nm; THT Mounting: THT LED diameter: 5mm Type of diode: IR transmitter LED lens: diffused; violet LED current: 100mA Viewing angle: 30° Wavelength of peak sensitivity: 890nm Optical power: 200W Operating voltage: 1.7V кількість в упаковці: 1 шт |
товар відсутній |
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| QED234 | ONSEMI |
QED234 IR LEDs |
на замовлення 197 шт: термін постачання 14-21 дні (днів) |
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| QEE113 | ONSEMI |
QEE113 IR LEDs |
на замовлення 314 шт: термін постачання 14-21 дні (днів) |
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| NVF3055L108T1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 206 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 72.24 грн |
| 10+ | 54.64 грн |
| 24+ | 43.54 грн |
| 65+ | 41.16 грн |
| 250+ | 39.55 грн |
| NVH4L040N65S3F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 33.8mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 33.8mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| NVHL020N090SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| NVJD4401NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.14W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.46A
Power dissipation: 0.14W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 0.375Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.14W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.46A
Power dissipation: 0.14W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 0.375Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| NVJD5121NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.212A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.212A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 210 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 9.23 грн |
| 100+ | 7.84 грн |
| 140+ | 7.46 грн |
| 380+ | 7.05 грн |
| 3000+ | 6.79 грн |
| NVMFD5877NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 12W; DFN8; 5x6mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 12W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 12W; DFN8; 5x6mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 12W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
кількість в упаковці: 3000 шт
товар відсутній
| NVMFD5C462NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; 25W; DFN8; 5x6mm
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Power dissipation: 25W
Dimensions: 5x6mm
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 52A
On-state resistance: 4.7mΩ
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; 25W; DFN8; 5x6mm
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Power dissipation: 25W
Dimensions: 5x6mm
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 52A
On-state resistance: 4.7mΩ
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
| NVMFS5113PLT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -45A
Power dissipation: 75W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -45A
Power dissipation: 75W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| NVMFS5A160PLZT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 100A; 200W; DFN5x6
Mounting: SMD
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5x6
On-state resistance: 7.7mΩ
Power dissipation: 200W
Polarisation: unipolar
кількість в упаковці: 1500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 100A; 200W; DFN5x6
Mounting: SMD
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5x6
On-state resistance: 7.7mΩ
Power dissipation: 200W
Polarisation: unipolar
кількість в упаковці: 1500 шт
товар відсутній
| NVMFS5C430NLAFT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 53W; DFN5x6
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Power dissipation: 53W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.4mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 900A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 53W; DFN5x6
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Power dissipation: 53W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.4mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 900A
кількість в упаковці: 1 шт
товар відсутній
| NVMFS5C604NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DFN5x6
Drain-source voltage: 60V
Drain current: 203A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DFN5x6
Drain-source voltage: 60V
Drain current: 203A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| NVMFS6H800NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 100W; SO8
Mounting: SMD
Drain current: 20A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 2.1mΩ
Power dissipation: 100W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 100W; SO8
Mounting: SMD
Drain current: 20A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 2.1mΩ
Power dissipation: 100W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| NVMFS6H818NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5
Mounting: SMD
Drain current: 87A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5
On-state resistance: 3.7mΩ
Pulsed drain current: 900A
Power dissipation: 68W
Gate charge: 46nC
Polarisation: unipolar
кількість в упаковці: 1500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5
Mounting: SMD
Drain current: 87A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5
On-state resistance: 3.7mΩ
Pulsed drain current: 900A
Power dissipation: 68W
Gate charge: 46nC
Polarisation: unipolar
кількість в упаковці: 1500 шт
товар відсутній
| NVR4003NT3G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.37A; 0.69W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 0.37A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.37A; 0.69W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 0.37A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
| NVR4501NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Application: automotive industry
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Gate charge: 6nC
Drain-source voltage: 20V
Drain current: 2.4A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Application: automotive industry
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Gate charge: 6nC
Drain-source voltage: 20V
Drain current: 2.4A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
| NVR5124PLT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.67A; 0.19W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.67A
Power dissipation: 0.19W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.67A; 0.19W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.67A
Power dissipation: 0.19W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1583 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 29.74 грн |
| 25+ | 21.17 грн |
| 66+ | 15.58 грн |
| 181+ | 14.73 грн |
| NVR5198NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Mounting: SMD
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.205Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Mounting: SMD
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.205Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 1860 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 37.53 грн |
| 13+ | 21.62 грн |
| 25+ | 17.86 грн |
| 85+ | 12.11 грн |
| 233+ | 11.41 грн |
| 1000+ | 11.24 грн |
| 3000+ | 10.98 грн |
| NVTFS5116PLTAG |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10A
Power dissipation: 1.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10A
Power dissipation: 1.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 57.9 грн |
| 25+ | 40.94 грн |
| 69+ | 38.33 грн |
| NVTJD4001NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.18A
Power dissipation: 0.272W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.18A
Power dissipation: 0.272W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2940 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 26.27 грн |
| 13+ | 21.98 грн |
| 15+ | 18.47 грн |
| 25+ | 11.67 грн |
| 100+ | 10.54 грн |
| 115+ | 8.97 грн |
| 315+ | 8.45 грн |
| NVTR0202PLT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1A; 225mW; SOT23
On-state resistance: 1.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -0.4A
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1A; 225mW; SOT23
On-state resistance: 1.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -0.4A
кількість в упаковці: 1 шт
товар відсутній
| NVTR4502PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| NVTR4503NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 1.5A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.73W
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 1.5A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.73W
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
на замовлення 2975 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 13.7 грн |
| 35+ | 8.87 грн |
| 100+ | 7.58 грн |
| 155+ | 6.58 грн |
| 425+ | 6.22 грн |
| NXH020U90MNF2PTG |
|
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Power dissipation: 352W
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -8...18V
Topology: NTC thermistor; Vienna Rectifier
Pulsed drain current: 447A
Case: PIM20
Semiconductor structure: diode/transistor
Drain-source voltage: 900V
Drain current: 149A
On-state resistance: 10mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Power dissipation: 352W
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -8...18V
Topology: NTC thermistor; Vienna Rectifier
Pulsed drain current: 447A
Case: PIM20
Semiconductor structure: diode/transistor
Drain-source voltage: 900V
Drain current: 149A
On-state resistance: 10mΩ
кількість в упаковці: 1 шт
товар відсутній
| NZQA6V8AXV5T1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6.8V; 1.6A; 0.38W; SOT553; Ch: 4; reel,tape; ±5%
Type of diode: diode arrays
Peak pulse power dissipation: 0.38W
Max. off-state voltage: 4.3V
Breakdown voltage: 6.8V
Max. forward impulse current: 1.6A
Tolerance: ±5%
Case: SOT553
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 4
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6.8V; 1.6A; 0.38W; SOT553; Ch: 4; reel,tape; ±5%
Type of diode: diode arrays
Peak pulse power dissipation: 0.38W
Max. off-state voltage: 4.3V
Breakdown voltage: 6.8V
Max. forward impulse current: 1.6A
Tolerance: ±5%
Case: SOT553
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 4
кількість в упаковці: 5 шт
товар відсутній
| NZT560A |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 93.82 грн |
| 25+ | 28.13 грн |
| 46+ | 22.31 грн |
| 125+ | 21.09 грн |
| 4000+ | 20.3 грн |
| NZT605 |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 110V; 1.5A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 110V
Collector current: 1.5A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
кількість в упаковці: 1 шт
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 110V; 1.5A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 110V
Collector current: 1.5A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
кількість в упаковці: 1 шт
товар відсутній
| NZT7053 |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Polarisation: bipolar
Case: SOT223
Kind of package: reel; tape
Kind of transistor: Darlington
Mounting: SMD
Frequency: 200MHz
Collector-emitter voltage: 100V
Collector current: 1.5A
Type of transistor: NPN
Power dissipation: 1W
кількість в упаковці: 1 шт
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Polarisation: bipolar
Case: SOT223
Kind of package: reel; tape
Kind of transistor: Darlington
Mounting: SMD
Frequency: 200MHz
Collector-emitter voltage: 100V
Collector current: 1.5A
Type of transistor: NPN
Power dissipation: 1W
кількість в упаковці: 1 шт
товар відсутній
| PACDN042Y3R |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; SOT23-3; Features: ESD protection; Ch: 2
Type of diode: TVS array
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Number of channels: 2
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; SOT23-3; Features: ESD protection; Ch: 2
Type of diode: TVS array
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Number of channels: 2
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 1114 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.45 грн |
| 30+ | 9.41 грн |
| 100+ | 8.1 грн |
| 155+ | 6.7 грн |
| 425+ | 6.33 грн |
| PCA9306AMUTCG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: UQFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: auto-direction sensing
кількість в упаковці: 1 шт
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: UQFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: auto-direction sensing
кількість в упаковці: 1 шт
товар відсутній
| PCA9306DTR2G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
кількість в упаковці: 1 шт
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
кількість в упаковці: 1 шт
на замовлення 3713 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.58 грн |
| 5+ | 63.14 грн |
| 22+ | 46.54 грн |
| 61+ | 44 грн |
| 500+ | 42.34 грн |
| PCA9306FMUTAG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
кількість в упаковці: 1 шт
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
кількість в упаковці: 1 шт
товар відсутній
| PCA9306FMUTCG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
кількість в упаковці: 1 шт
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
кількість в упаковці: 1 шт
товар відсутній
| PCA9306USG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: US8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
кількість в упаковці: 1 шт
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: US8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
кількість в упаковці: 1 шт
на замовлення 33 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.86 грн |
| 23+ | 46.47 грн |
| 63+ | 42.31 грн |
| 3000+ | 40.68 грн |
| PCA9535ECMTTXG |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Interface: I2C; SMBus
Kind of package: reel; tape
Application: for LED applications
Mounting: SMD
Frequency: 1MHz
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Number of channels: 16
Case: WQFN24
Integrated circuit features: PWM
кількість в упаковці: 3000 шт
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Interface: I2C; SMBus
Kind of package: reel; tape
Application: for LED applications
Mounting: SMD
Frequency: 1MHz
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Number of channels: 16
Case: WQFN24
Integrated circuit features: PWM
кількість в упаковці: 3000 шт
товар відсутній
| PCA9535EDWR2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; SO24
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Interface: I2C; SMBus
Kind of package: reel; tape
Application: for LED applications
Mounting: SMD
Frequency: 1MHz
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Number of channels: 16
Case: SO24
Integrated circuit features: PWM
кількість в упаковці: 1000 шт
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; SO24
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Interface: I2C; SMBus
Kind of package: reel; tape
Application: for LED applications
Mounting: SMD
Frequency: 1MHz
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Number of channels: 16
Case: SO24
Integrated circuit features: PWM
кількість в упаковці: 1000 шт
товар відсутній
| PIR-GEVB |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCS36000
Kit contents: prototype board
Interface: GPIO; I2C
Kind of connector: Pmod connector
Components: NCS36000
development kits accessories features: motion sensor
Type of accessories for development kits: expansion board
кількість в упаковці: 1 шт
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCS36000
Kit contents: prototype board
Interface: GPIO; I2C
Kind of connector: Pmod connector
Components: NCS36000
development kits accessories features: motion sensor
Type of accessories for development kits: expansion board
кількість в упаковці: 1 шт
товар відсутній
| PN2222ABU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 0.625W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.625W
Kind of package: bulk
Collector-emitter voltage: 40V
Collector current: 1A
Type of transistor: NPN
Polarisation: bipolar
кількість в упаковці: 1 шт
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 0.625W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.625W
Kind of package: bulk
Collector-emitter voltage: 40V
Collector current: 1A
Type of transistor: NPN
Polarisation: bipolar
кількість в упаковці: 1 шт
на замовлення 954 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.96 грн |
| 14+ | 19.54 грн |
| 100+ | 8.48 грн |
| 213+ | 4.81 грн |
| 585+ | 4.55 грн |
| 5000+ | 4.44 грн |
| PN2222ATA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 0.625W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.625W
Kind of package: Ammo Pack
Collector-emitter voltage: 40V
Collector current: 1A
Type of transistor: NPN
Polarisation: bipolar
кількість в упаковці: 1 шт
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 0.625W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.625W
Kind of package: Ammo Pack
Collector-emitter voltage: 40V
Collector current: 1A
Type of transistor: NPN
Polarisation: bipolar
кількість в упаковці: 1 шт
на замовлення 890 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 19.7 грн |
| 20+ | 13.66 грн |
| 50+ | 8.69 грн |
| 100+ | 7.28 грн |
| 238+ | 4.31 грн |
| 653+ | 4.08 грн |
| 4000+ | 3.95 грн |
| PN2222ATF |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 0.625W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.625W
Kind of package: reel; tape
Collector-emitter voltage: 40V
Collector current: 1A
Type of transistor: NPN
Polarisation: bipolar
кількість в упаковці: 1 шт
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 0.625W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.625W
Kind of package: reel; tape
Collector-emitter voltage: 40V
Collector current: 1A
Type of transistor: NPN
Polarisation: bipolar
кількість в упаковці: 1 шт
на замовлення 1410 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 27.21 грн |
| 17+ | 16.65 грн |
| 50+ | 10.63 грн |
| 100+ | 8.95 грн |
| 231+ | 4.43 грн |
| 635+ | 4.19 грн |
| 6000+ | 4.03 грн |
| POE-GEVB |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCP1083
Interface: I2C; I2C - Slave; SPI
Kind of connector: pin strips; RJ45
Kit contents: prototype board
Components: NCP1083
Type of accessories for development kits: expansion board
development kits accessories features: Arduino Shield compatible
кількість в упаковці: 1 шт
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCP1083
Interface: I2C; I2C - Slave; SPI
Kind of connector: pin strips; RJ45
Kit contents: prototype board
Components: NCP1083
Type of accessories for development kits: expansion board
development kits accessories features: Arduino Shield compatible
кількість в упаковці: 1 шт
товар відсутній
| PZT2222AT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 630 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 16.89 грн |
| 50+ | 12.85 грн |
| 100+ | 11.06 грн |
| 136+ | 7.58 грн |
| 373+ | 7.14 грн |
| PZT2907AT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
кількість в упаковці: 1 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
кількість в упаковці: 1 шт
товар відсутній
| PZT2907AT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
кількість в упаковці: 4000 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
кількість в упаковці: 4000 шт
товар відсутній
| PZT3904T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
кількість в упаковці: 1 шт
на замовлення 450 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 32.84 грн |
| 11+ | 25.24 грн |
| 25+ | 13.33 грн |
| 99+ | 10.19 грн |
| 272+ | 9.58 грн |
| PZTA06 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; SOT223
Mounting: SMD
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT223
Frequency: 100MHz
Collector-emitter voltage: 80V
Collector current: 0.5A
Type of transistor: NPN
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; SOT223
Mounting: SMD
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT223
Frequency: 100MHz
Collector-emitter voltage: 80V
Collector current: 0.5A
Type of transistor: NPN
кількість в упаковці: 1 шт
на замовлення 3389 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 37.53 грн |
| 25+ | 32.84 грн |
| 39+ | 26.07 грн |
| 107+ | 24.65 грн |
| 4000+ | 23.7 грн |
| PZTA28 |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
кількість в упаковці: 4000 шт
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
кількість в упаковці: 4000 шт
товар відсутній
| PZTA29 |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
кількість в упаковці: 4000 шт
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
кількість в упаковці: 4000 шт
товар відсутній
| PZTA42T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| PZTA56 |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 1W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
кількість в упаковці: 4000 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 1W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
кількість в упаковці: 4000 шт
товар відсутній
| PZTA64 |
|
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 1W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
кількість в упаковці: 4000 шт
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 1W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
кількість в упаковці: 4000 шт
товар відсутній
| PZTA92T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 1400 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 19.7 грн |
| 25+ | 14.29 грн |
| 95+ | 10.98 грн |
| 255+ | 10.37 грн |
| 1000+ | 10.11 грн |
| QEB363ZR |
|
Виробник: ONSEMI
Category: IR LEDs
Description: IR transmitter; 2mm; Gull wing; transparent; 8mW; 24°; THT; 100mA
Mounting: THT
Operating voltage: 1.6V
Viewing angle: 24°
LED version: axial; reverse mount
Wavelength of peak sensitivity: 940nm
Dimensions: 2.5x2.2x3mm
Optical power: 8mW
Case: Gull wing
LED diameter: 2mm
Type of diode: IR transmitter
LED lens: transparent
LED current: 100mA
кількість в упаковці: 1 шт
Category: IR LEDs
Description: IR transmitter; 2mm; Gull wing; transparent; 8mW; 24°; THT; 100mA
Mounting: THT
Operating voltage: 1.6V
Viewing angle: 24°
LED version: axial; reverse mount
Wavelength of peak sensitivity: 940nm
Dimensions: 2.5x2.2x3mm
Optical power: 8mW
Case: Gull wing
LED diameter: 2mm
Type of diode: IR transmitter
LED lens: transparent
LED current: 100mA
кількість в упаковці: 1 шт
товар відсутній
| QEB373GR |
|
Виробник: ONSEMI
Category: IR LEDs
Description: IR transmitter; 1.9mm; Gull wing; transparent; 100W; 24°; SMD; 50mA
Type of diode: IR transmitter
LED diameter: 1.9mm
Case: Gull wing
LED lens: transparent
Optical power: 100W
Viewing angle: 24°
Wavelength of peak sensitivity: 875nm
Mounting: SMD
LED current: 50mA
Operating voltage: 1.7V
кількість в упаковці: 1 шт
Category: IR LEDs
Description: IR transmitter; 1.9mm; Gull wing; transparent; 100W; 24°; SMD; 50mA
Type of diode: IR transmitter
LED diameter: 1.9mm
Case: Gull wing
LED lens: transparent
Optical power: 100W
Viewing angle: 24°
Wavelength of peak sensitivity: 875nm
Mounting: SMD
LED current: 50mA
Operating voltage: 1.7V
кількість в упаковці: 1 шт
товар відсутній
| QED123 |
|
Виробник: ONSEMI
Category: IR LEDs
Description: IR transmitter; 5mm; diffused,orange; 70mW; 16°; λp max: 890nm; THT
Type of diode: IR transmitter
LED diameter: 5mm
LED lens: diffused; orange
Optical power: 70mW
Viewing angle: 16°
Wavelength of peak sensitivity: 890nm
Mounting: THT
LED current: 100mA
Shape: round
Operating voltage: 1.7V
кількість в упаковці: 1 шт
Category: IR LEDs
Description: IR transmitter; 5mm; diffused,orange; 70mW; 16°; λp max: 890nm; THT
Type of diode: IR transmitter
LED diameter: 5mm
LED lens: diffused; orange
Optical power: 70mW
Viewing angle: 16°
Wavelength of peak sensitivity: 890nm
Mounting: THT
LED current: 100mA
Shape: round
Operating voltage: 1.7V
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 75.05 грн |
| 5+ | 54.28 грн |
| 25+ | 23.43 грн |
| 58+ | 17.51 грн |
| 158+ | 16.55 грн |
| 500+ | 16.46 грн |
| QED123A4R0 |
|
Виробник: ONSEMI
Category: IR LEDs
Description: IR transmitter; 5mm; diffused,violet; 200W; 16°; λp max: 890nm; THT
Mounting: THT
LED diameter: 5mm
Type of diode: IR transmitter
LED lens: diffused; violet
LED current: 100mA
Viewing angle: 16°
Wavelength of peak sensitivity: 890nm
Optical power: 200W
Operating voltage: 1.7V
кількість в упаковці: 1 шт
Category: IR LEDs
Description: IR transmitter; 5mm; diffused,violet; 200W; 16°; λp max: 890nm; THT
Mounting: THT
LED diameter: 5mm
Type of diode: IR transmitter
LED lens: diffused; violet
LED current: 100mA
Viewing angle: 16°
Wavelength of peak sensitivity: 890nm
Optical power: 200W
Operating voltage: 1.7V
кількість в упаковці: 1 шт
товар відсутній
| QED223 |
|
Виробник: ONSEMI
Category: IR LEDs
Description: IR transmitter; 5mm; diffused,violet; 25mW; 30°; λp max: 890nm; THT
Mounting: THT
Operating voltage: 1.7V
LED diameter: 5mm
Type of diode: IR transmitter
LED lens: diffused; violet
LED current: 100mA
Viewing angle: 30°
Wavelength of peak sensitivity: 890nm
Optical power: 25mW
Shape: round
кількість в упаковці: 1 шт
Category: IR LEDs
Description: IR transmitter; 5mm; diffused,violet; 25mW; 30°; λp max: 890nm; THT
Mounting: THT
Operating voltage: 1.7V
LED diameter: 5mm
Type of diode: IR transmitter
LED lens: diffused; violet
LED current: 100mA
Viewing angle: 30°
Wavelength of peak sensitivity: 890nm
Optical power: 25mW
Shape: round
кількість в упаковці: 1 шт
на замовлення 189 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.9 грн |
| 5+ | 56.63 грн |
| 25+ | 42.16 грн |
| 29+ | 34.85 грн |
| 80+ | 33.02 грн |
| 500+ | 32.93 грн |
| QED223A4R0 |
|
Виробник: ONSEMI
Category: IR LEDs
Description: IR transmitter; 5mm; diffused,violet; 200W; 30°; λp max: 890nm; THT
Mounting: THT
LED diameter: 5mm
Type of diode: IR transmitter
LED lens: diffused; violet
LED current: 100mA
Viewing angle: 30°
Wavelength of peak sensitivity: 890nm
Optical power: 200W
Operating voltage: 1.7V
кількість в упаковці: 1 шт
Category: IR LEDs
Description: IR transmitter; 5mm; diffused,violet; 200W; 30°; λp max: 890nm; THT
Mounting: THT
LED diameter: 5mm
Type of diode: IR transmitter
LED lens: diffused; violet
LED current: 100mA
Viewing angle: 30°
Wavelength of peak sensitivity: 890nm
Optical power: 200W
Operating voltage: 1.7V
кількість в упаковці: 1 шт
товар відсутній