| Фото | Назва | Виробник | Інформація |
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NTZD3154NT1G | ONSEMI |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 0.54A; 0.25W; SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.54A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±7V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3373 шт: термін постачання 14-21 дні (днів) |
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NTZD3155CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 400/500mΩ Mounting: SMD Gate charge: 1.5/1.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 5676 шт: термін постачання 14-21 дні (днів) |
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NTZD3155CT2G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 3469 шт: термін постачання 14-21 дні (днів) |
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NTZD5110NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.225A Power dissipation: 0.28W Case: SOT563F Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
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| NTZS3151PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.76A; 0.21W; SOT563F Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.76A Power dissipation: 0.21W Case: SOT563F Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
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NUD3124LT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 0.2A; Ch: 1; N-Channel; SMD; SOT23 Output current: 0.2A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Kind of package: reel; tape Kind of integrated circuit: low-side Mounting: SMD Case: SOT23 On-state resistance: 0.8Ω кількість в упаковці: 1 шт |
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NUD3160DMT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 0.2A; Ch: 2; N-Channel; SMD; SC74 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 0.2A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: SC74 On-state resistance: 1.8Ω Kind of package: reel; tape кількість в упаковці: 1 шт |
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NUD3160LT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 0.2A; Ch: 2; N-Channel; SMD; SOT23 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 0.2A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: SOT23 On-state resistance: 1.8Ω Kind of package: reel; tape кількість в упаковці: 1 шт |
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NUD4001DR2G | ONSEMI |
 Category: LED driversDescription: IC: driver; LED controller; SO8; 500mA; 28V; Ch: 1; PWM Mounting: SMD Case: SO8 Operating temperature: -40...125°C Integrated circuit features: PWM Kind of integrated circuit: LED controller Output voltage: 28V Output current: 0.5A Type of integrated circuit: driver Number of channels: 1 кількість в упаковці: 1 шт |
на замовлення 566 шт: термін постачання 14-21 дні (днів) |
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NUD4700SNT1G | ONSEMI |
Category: LED drivers Description: IC: driver; current shunt; POWERMITE; 1V; 1.56W; 1.3A Type of integrated circuit: driver Case: POWERMITE Mounting: SMD Operating temperature: -40...150°C Power dissipation: 1.56W Kind of integrated circuit: current shunt Operating current: 1.3A Operating voltage: 1V кількість в упаковці: 3000 шт |
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NUF2042XV6T1G | ONSEMI |
Category: Filters - integrated circuits Description: Filter: digital; line terminator; lowpass,EMI; SOT563; Ch: 2 Type of filter: digital Kind of filter: EMI; lowpass Mounting: SMD Case: SOT563 Number of channels: 2 Application: USB port ESD protection Kind of integrated circuit: line terminator кількість в упаковці: 1 шт |
на замовлення 108 шт: термін постачання 14-21 дні (днів) |
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| NUF4401MNT1G | ONSEMI |
Category: Filters - integrated circuits Description: Filter: digital; EMI; DFN8; Ch: 4 Type of filter: digital Kind of filter: EMI Mounting: SMD Case: DFN8 Number of channels: 4 кількість в упаковці: 1 шт |
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| NUP1105LT1G | ONSEMI |
NUP1105LT1G Transil diodes - arrays |
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NUP1301ML3T1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; double series; SOT23; Features: ESD protection Type of diode: TVS array Semiconductor structure: double series Mounting: SMD Case: SOT23 Max. off-state voltage: 70V Features of semiconductor devices: ESD protection Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 113 шт: термін постачання 14-21 дні (днів) |
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NUP2105LT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 26.2...32V Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Kind of package: reel; tape Application: CAN кількість в упаковці: 1 шт |
на замовлення 4819 шт: термін постачання 14-21 дні (днів) |
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NUP2201MR6T1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2 Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 25A Peak pulse power dissipation: 0.5kW Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Features of semiconductor devices: ESD protection Leakage current: 5µA Number of channels: 2 Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1223 шт: термін постачання 14-21 дні (днів) |
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NUP2301MW6T1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: diode arrays; SC88; Features: ESD protection; Ch: 2 Case: SC88 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 70V Features of semiconductor devices: ESD protection Number of channels: 2 Type of diode: diode arrays кількість в упаковці: 1 шт |
на замовлення 2818 шт: термін постачання 14-21 дні (днів) |
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NUP4114HMR6T1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6.5V; 12A; TSOP6; Features: ESD protection; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.5V Max. forward impulse current: 12A Mounting: SMD Case: TSOP6 Max. off-state voltage: 5.5V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape кількість в упаковці: 1 шт |
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NUP4114UCLW1T2G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.5V Max. forward impulse current: 12A Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 991 шт: термін постачання 14-21 дні (днів) |
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NUP4114UCW1T2G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.5V Max. forward impulse current: 12A Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1777 шт: термін постачання 14-21 дні (днів) |
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NUP4301MR6T1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: diode arrays; SC74; Features: ESD protection; Ch: 4 Type of diode: diode arrays Mounting: SMD Case: SC74 Max. off-state voltage: 70V Features of semiconductor devices: ESD protection Number of channels: 4 Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 2975 шт: термін постачання 14-21 дні (днів) |
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| NV24C04DTVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 3000 шт |
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| NV24C04MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 3000 шт |
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| NV24C08DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 1 шт |
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| NV24C08MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 3000 шт |
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| NV24C128MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128bEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 128b EEPROM Interface: I2C Memory organisation: 16kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 0.4ns Kind of package: reel; tape Operating voltage: 2.5...5.5V кількість в упаковці: 3000 шт |
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| NV24C16DTVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 1 шт |
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| NV24C16DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 3000 шт |
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| NV24C16MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 3000 шт |
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| NV24C16SNVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: TSOP5 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 3000 шт |
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| NV24C16UVLT2G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 3000 шт |
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| NV24C256MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V кількість в упаковці: 3000 шт |
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| NV24C32DTVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 3000 шт |
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| NV24C32DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 3000 шт |
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| NV24C32MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 3000 шт |
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| NV24C32UVLT2G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 3000 шт |
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| NV24C512MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: I2C Memory organisation: 64kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 0.4ns Kind of package: reel; tape Operating voltage: 2.5...5.5V кількість в упаковці: 3000 шт |
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| NV24C64DTVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 3000 шт |
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| NV24C64DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 1 шт |
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| NV24C64MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 3000 шт |
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| NV24C64UVLT2G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 1.7...5.5V кількість в упаковці: 3000 шт |
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| NV24M01MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1Mb EEPROM Interface: I2C Memory organisation: 128kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 2.5...5.5V кількість в упаковці: 3000 шт |
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| NV25010DWHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 2.5÷5.5V; 10MHz; SOIC8 Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory: 1kb EEPROM Case: SOIC8 Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Operating voltage: 2.5...5.5V Kind of interface: serial Memory organisation: 128x8bit Access time: 40ns Clock frequency: 10MHz кількість в упаковці: 3000 шт |
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| NV25080DTVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 20MHz; TSSOP8 Mounting: SMD Interface: SPI Memory: 8kb EEPROM Operating voltage: 1.7...5.5V Clock frequency: 20MHz Kind of memory: EEPROM Operating temperature: -40...125°C Kind of package: reel; tape Case: TSSOP8 Kind of interface: serial Type of integrated circuit: EEPROM memory Memory organisation: 1kx8bit Access time: 75ns кількість в упаковці: 3000 шт |
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| NV25080DWHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 10MHz; SOIC8 Mounting: SMD Interface: SPI Memory: 8kb EEPROM Operating voltage: 2.5...5.5V Clock frequency: 10MHz Kind of memory: EEPROM Operating temperature: -40...150°C Kind of package: reel; tape Case: SOIC8 Kind of interface: serial Type of integrated circuit: EEPROM memory Memory organisation: 1kx8bit Access time: 40ns кількість в упаковці: 3000 шт |
товар відсутній |
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| NV25160DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 2.5÷5.5V; 10MHz Mounting: SMD Operating temperature: -40...150°C Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 2kx8bit Access time: 40ns Clock frequency: 10MHz Kind of package: reel; tape Kind of interface: serial Memory: 16kb EEPROM Case: TSSOP8 Operating voltage: 2.5...5.5V кількість в упаковці: 3000 шт |
товар відсутній |
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| NV25256DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V кількість в упаковці: 3000 шт |
товар відсутній |
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| NV25256DWHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V кількість в упаковці: 3000 шт |
товар відсутній |
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| NV25256MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape Operating voltage: 1.8...5.5V кількість в упаковці: 3000 шт |
товар відсутній |
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| NV25320DTHFT3G | ONSEMI |
NV25320DTHFT3G Serial EEPROM memories - integ. circ. |
товар відсутній |
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| NV25320DWHFT3G | ONSEMI |
NV25320DWHFT3G Serial EEPROM memories - integ. circ. |
товар відсутній |
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| NV25512MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Case: uDFN8 Mounting: SMD Interface: SPI Operating temperature: -40...125°C Kind of package: reel; tape Memory organisation: 64kx8bit Access time: 45ns Clock frequency: 10MHz Kind of interface: serial Memory: 512kb EEPROM Operating voltage: 1.8...5.5V Kind of memory: EEPROM кількість в упаковці: 3000 шт |
товар відсутній |
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| NV25640DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz Operating temperature: -40...150°C Access time: 40ns Clock frequency: 10MHz Memory organisation: 8kx8bit Kind of memory: EEPROM Interface: SPI Kind of package: reel; tape Type of integrated circuit: EEPROM memory Operating voltage: 2.5...5.5V Case: TSSOP8 Mounting: SMD Kind of interface: serial Memory: 64kb EEPROM кількість в упаковці: 3000 шт |
товар відсутній |
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| NV25640DWHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; SOIC8 Operating temperature: -40...150°C Access time: 40ns Clock frequency: 10MHz Memory organisation: 8kx8bit Kind of memory: EEPROM Interface: SPI Kind of package: reel; tape Type of integrated circuit: EEPROM memory Operating voltage: 2.5...5.5V Case: SOIC8 Mounting: SMD Kind of interface: serial Memory: 64kb EEPROM кількість в упаковці: 3000 шт |
товар відсутній |
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| NV25M01DTUTG | ONSEMI |
NV25M01DTUTG Serial EEPROM memories - integ. circ. |
товар відсутній |
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 |
NVD5C688NLT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 77A; 9W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape On-state resistance: 27.4mΩ Type of transistor: N-MOSFET Power dissipation: 9W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 77A Drain-source voltage: 60V Drain current: 12A кількість в упаковці: 1 шт |
на замовлення 1961 шт: термін постачання 14-21 дні (днів) |
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NVF2955T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223 Mounting: SMD Drain-source voltage: -60V Drain current: -2.6A On-state resistance: 154mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14.3nC Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT223 кількість в упаковці: 1 шт |
на замовлення 943 шт: термін постачання 14-21 дні (днів) |
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NVF3055L108T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 206 шт: термін постачання 14-21 дні (днів) |
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| NVH4L040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 162.5A Power dissipation: 446W Case: TO247 Gate-source voltage: ±30V On-state resistance: 33.8mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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NVHL020N090SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 83A Pulsed drain current: 472A Power dissipation: 251W Case: TO247-3 Gate-source voltage: -10...19V On-state resistance: 28mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
| NTZD3154NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.54A; 0.25W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.54A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±7V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.54A; 0.25W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.54A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±7V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3373 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 33.77 грн |
| 13+ | 22.34 грн |
| 50+ | 14.03 грн |
| 100+ | 11.67 грн |
| 128+ | 8.02 грн |
| 351+ | 7.58 грн |
| 1000+ | 7.32 грн |
| NTZD3155CT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 5676 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 29.08 грн |
| 17+ | 16.65 грн |
| 100+ | 11.15 грн |
| 115+ | 8.89 грн |
| 316+ | 8.45 грн |
| 1000+ | 8.1 грн |
| NTZD3155CT2G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 3469 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 28.14 грн |
| 13+ | 21.44 грн |
| 25+ | 15.07 грн |
| 100+ | 8.1 грн |
| 130+ | 7.84 грн |
| 250+ | 7.49 грн |
| 500+ | 7.14 грн |
| NTZD5110NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.225A
Power dissipation: 0.28W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.225A
Power dissipation: 0.28W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
| NTZS3151PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.76A; 0.21W; SOT563F
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 0.21W
Case: SOT563F
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.76A; 0.21W; SOT563F
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 0.21W
Case: SOT563F
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
| NUD3124LT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.2A; Ch: 1; N-Channel; SMD; SOT23
Output current: 0.2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: low-side
Mounting: SMD
Case: SOT23
On-state resistance: 0.8Ω
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.2A; Ch: 1; N-Channel; SMD; SOT23
Output current: 0.2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: low-side
Mounting: SMD
Case: SOT23
On-state resistance: 0.8Ω
кількість в упаковці: 1 шт
товар відсутній
| NUD3160DMT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.2A; Ch: 2; N-Channel; SMD; SC74
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SC74
On-state resistance: 1.8Ω
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.2A; Ch: 2; N-Channel; SMD; SC74
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SC74
On-state resistance: 1.8Ω
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| NUD3160LT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.2A; Ch: 2; N-Channel; SMD; SOT23
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SOT23
On-state resistance: 1.8Ω
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.2A; Ch: 2; N-Channel; SMD; SOT23
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SOT23
On-state resistance: 1.8Ω
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| NUD4001DR2G | |
|
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED controller; SO8; 500mA; 28V; Ch: 1; PWM
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: PWM
Kind of integrated circuit: LED controller
Output voltage: 28V
Output current: 0.5A
Type of integrated circuit: driver
Number of channels: 1
кількість в упаковці: 1 шт
Category: LED drivers
Description: IC: driver; LED controller; SO8; 500mA; 28V; Ch: 1; PWM
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: PWM
Kind of integrated circuit: LED controller
Output voltage: 28V
Output current: 0.5A
Type of integrated circuit: driver
Number of channels: 1
кількість в упаковці: 1 шт
на замовлення 566 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 78.8 грн |
| 5+ | 62.6 грн |
| 25+ | 42.69 грн |
| 67+ | 40.07 грн |
| NUD4700SNT1G |
|
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; current shunt; POWERMITE; 1V; 1.56W; 1.3A
Type of integrated circuit: driver
Case: POWERMITE
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 1.56W
Kind of integrated circuit: current shunt
Operating current: 1.3A
Operating voltage: 1V
кількість в упаковці: 3000 шт
Category: LED drivers
Description: IC: driver; current shunt; POWERMITE; 1V; 1.56W; 1.3A
Type of integrated circuit: driver
Case: POWERMITE
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 1.56W
Kind of integrated circuit: current shunt
Operating current: 1.3A
Operating voltage: 1V
кількість в упаковці: 3000 шт
товар відсутній
| NUF2042XV6T1G |
|
Виробник: ONSEMI
Category: Filters - integrated circuits
Description: Filter: digital; line terminator; lowpass,EMI; SOT563; Ch: 2
Type of filter: digital
Kind of filter: EMI; lowpass
Mounting: SMD
Case: SOT563
Number of channels: 2
Application: USB port ESD protection
Kind of integrated circuit: line terminator
кількість в упаковці: 1 шт
Category: Filters - integrated circuits
Description: Filter: digital; line terminator; lowpass,EMI; SOT563; Ch: 2
Type of filter: digital
Kind of filter: EMI; lowpass
Mounting: SMD
Case: SOT563
Number of channels: 2
Application: USB port ESD protection
Kind of integrated circuit: line terminator
кількість в упаковці: 1 шт
на замовлення 108 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.02 грн |
| 25+ | 25.96 грн |
| 48+ | 21.25 грн |
| 132+ | 20.09 грн |
| 500+ | 19.86 грн |
| 2000+ | 19.34 грн |
| NUF4401MNT1G |
|
Виробник: ONSEMI
Category: Filters - integrated circuits
Description: Filter: digital; EMI; DFN8; Ch: 4
Type of filter: digital
Kind of filter: EMI
Mounting: SMD
Case: DFN8
Number of channels: 4
кількість в упаковці: 1 шт
Category: Filters - integrated circuits
Description: Filter: digital; EMI; DFN8; Ch: 4
Type of filter: digital
Kind of filter: EMI
Mounting: SMD
Case: DFN8
Number of channels: 4
кількість в упаковці: 1 шт
товар відсутній
| NUP1301ML3T1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; double series; SOT23; Features: ESD protection
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; double series; SOT23; Features: ESD protection
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 113 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.95 грн |
| 35+ | 8.41 грн |
| 100+ | 7.23 грн |
| 155+ | 6.8 грн |
| 415+ | 6.43 грн |
| 3000+ | 6.19 грн |
| NUP2105LT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Application: CAN
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Application: CAN
кількість в упаковці: 1 шт
на замовлення 4819 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 16.51 грн |
| 25+ | 12.67 грн |
| 100+ | 10.45 грн |
| 116+ | 8.71 грн |
| 319+ | 8.28 грн |
| 3000+ | 8.1 грн |
| NUP2201MR6T1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 25A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Features of semiconductor devices: ESD protection
Leakage current: 5µA
Number of channels: 2
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 25A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Features of semiconductor devices: ESD protection
Leakage current: 5µA
Number of channels: 2
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1223 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 37.53 грн |
| 25+ | 28.59 грн |
| 52+ | 19.99 грн |
| 141+ | 18.9 грн |
| 3000+ | 18.21 грн |
| NUP2301MW6T1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: diode arrays; SC88; Features: ESD protection; Ch: 2
Case: SC88
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 70V
Features of semiconductor devices: ESD protection
Number of channels: 2
Type of diode: diode arrays
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: diode arrays; SC88; Features: ESD protection; Ch: 2
Case: SC88
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 70V
Features of semiconductor devices: ESD protection
Number of channels: 2
Type of diode: diode arrays
кількість в упаковці: 1 шт
на замовлення 2818 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 24.67 грн |
| 25+ | 20.63 грн |
| 62+ | 16.45 грн |
| 171+ | 15.55 грн |
| 3000+ | 14.98 грн |
| NUP4114HMR6T1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; TSOP6; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; TSOP6; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| NUP4114UCLW1T2G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 991 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 22.8 грн |
| 25+ | 13.57 грн |
| 100+ | 11.76 грн |
| 108+ | 9.41 грн |
| 295+ | 8.9 грн |
| NUP4114UCW1T2G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1777 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 57.23 грн |
| 12+ | 24.06 грн |
| 25+ | 13.94 грн |
| 100+ | 12.46 грн |
| 106+ | 9.58 грн |
| 289+ | 9.06 грн |
| NUP4301MR6T1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: diode arrays; SC74; Features: ESD protection; Ch: 4
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Max. off-state voltage: 70V
Features of semiconductor devices: ESD protection
Number of channels: 4
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: diode arrays; SC74; Features: ESD protection; Ch: 4
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Max. off-state voltage: 70V
Features of semiconductor devices: ESD protection
Number of channels: 4
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 2975 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.26 грн |
| 30+ | 9.23 грн |
| 100+ | 7.84 грн |
| 150+ | 6.86 грн |
| 410+ | 6.48 грн |
| NV24C04DTVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24C04MUW3VLTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24C08DWVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 1 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 1 шт
товар відсутній
| NV24C08MUW3VLTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24C128MUW3VTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128bEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128b EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128bEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128b EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24C16DTVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 1 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 1 шт
товар відсутній
| NV24C16DWVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24C16MUW3VLTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24C16SNVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24C16UVLT2G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24C256MUW3VTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24C32DTVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24C32DWVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24C32MUW3VLTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24C32UVLT2G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24C512MUW3VTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24C64DTVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24C64DWVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 1 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 1 шт
товар відсутній
| NV24C64MUW3VLTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24C64UVLT2G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV24M01MUW3VTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: I2C
Memory organisation: 128kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: I2C
Memory organisation: 128kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV25010DWHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 2.5÷5.5V; 10MHz; SOIC8
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory: 1kb EEPROM
Case: SOIC8
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Kind of interface: serial
Memory organisation: 128x8bit
Access time: 40ns
Clock frequency: 10MHz
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 2.5÷5.5V; 10MHz; SOIC8
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory: 1kb EEPROM
Case: SOIC8
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Kind of interface: serial
Memory organisation: 128x8bit
Access time: 40ns
Clock frequency: 10MHz
кількість в упаковці: 3000 шт
товар відсутній
| NV25080DTVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 20MHz; TSSOP8
Mounting: SMD
Interface: SPI
Memory: 8kb EEPROM
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Kind of memory: EEPROM
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: TSSOP8
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Memory organisation: 1kx8bit
Access time: 75ns
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 20MHz; TSSOP8
Mounting: SMD
Interface: SPI
Memory: 8kb EEPROM
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Kind of memory: EEPROM
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: TSSOP8
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Memory organisation: 1kx8bit
Access time: 75ns
кількість в упаковці: 3000 шт
товар відсутній
| NV25080DWHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Mounting: SMD
Interface: SPI
Memory: 8kb EEPROM
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Kind of memory: EEPROM
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SOIC8
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Memory organisation: 1kx8bit
Access time: 40ns
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Mounting: SMD
Interface: SPI
Memory: 8kb EEPROM
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Kind of memory: EEPROM
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SOIC8
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Memory organisation: 1kx8bit
Access time: 40ns
кількість в упаковці: 3000 шт
товар відсутній
| NV25160DTHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...150°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 2kx8bit
Access time: 40ns
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 16kb EEPROM
Case: TSSOP8
Operating voltage: 2.5...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...150°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 2kx8bit
Access time: 40ns
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 16kb EEPROM
Case: TSSOP8
Operating voltage: 2.5...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV25256DTHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV25256DWHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV25256MUW3VTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
кількість в упаковці: 3000 шт
товар відсутній
| NV25512MUW3VTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Case: uDFN8
Mounting: SMD
Interface: SPI
Operating temperature: -40...125°C
Kind of package: reel; tape
Memory organisation: 64kx8bit
Access time: 45ns
Clock frequency: 10MHz
Kind of interface: serial
Memory: 512kb EEPROM
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Case: uDFN8
Mounting: SMD
Interface: SPI
Operating temperature: -40...125°C
Kind of package: reel; tape
Memory organisation: 64kx8bit
Access time: 45ns
Clock frequency: 10MHz
Kind of interface: serial
Memory: 512kb EEPROM
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
кількість в упаковці: 3000 шт
товар відсутній
| NV25640DTHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...150°C
Access time: 40ns
Clock frequency: 10MHz
Memory organisation: 8kx8bit
Kind of memory: EEPROM
Interface: SPI
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Operating voltage: 2.5...5.5V
Case: TSSOP8
Mounting: SMD
Kind of interface: serial
Memory: 64kb EEPROM
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...150°C
Access time: 40ns
Clock frequency: 10MHz
Memory organisation: 8kx8bit
Kind of memory: EEPROM
Interface: SPI
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Operating voltage: 2.5...5.5V
Case: TSSOP8
Mounting: SMD
Kind of interface: serial
Memory: 64kb EEPROM
кількість в упаковці: 3000 шт
товар відсутній
| NV25640DWHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Operating temperature: -40...150°C
Access time: 40ns
Clock frequency: 10MHz
Memory organisation: 8kx8bit
Kind of memory: EEPROM
Interface: SPI
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Operating voltage: 2.5...5.5V
Case: SOIC8
Mounting: SMD
Kind of interface: serial
Memory: 64kb EEPROM
кількість в упаковці: 3000 шт
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Operating temperature: -40...150°C
Access time: 40ns
Clock frequency: 10MHz
Memory organisation: 8kx8bit
Kind of memory: EEPROM
Interface: SPI
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Operating voltage: 2.5...5.5V
Case: SOIC8
Mounting: SMD
Kind of interface: serial
Memory: 64kb EEPROM
кількість в упаковці: 3000 шт
товар відсутній
| NVD5C688NLT4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 77A; 9W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
On-state resistance: 27.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 9W
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 77A
Drain-source voltage: 60V
Drain current: 12A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 77A; 9W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
On-state resistance: 27.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 9W
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 77A
Drain-source voltage: 60V
Drain current: 12A
кількість в упаковці: 1 шт
на замовлення 1961 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 174.5 грн |
| 5+ | 108.56 грн |
| 13+ | 77.53 грн |
| 36+ | 73.18 грн |
| NVF2955T1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Mounting: SMD
Drain-source voltage: -60V
Drain current: -2.6A
On-state resistance: 154mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Mounting: SMD
Drain-source voltage: -60V
Drain current: -2.6A
On-state resistance: 154mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
кількість в упаковці: 1 шт
на замовлення 943 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.22 грн |
| 5+ | 86.85 грн |
| 18+ | 59.24 грн |
| 48+ | 55.75 грн |
| NVF3055L108T1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 206 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 72.24 грн |
| 10+ | 54.64 грн |
| 24+ | 43.54 грн |
| 65+ | 41.16 грн |
| 250+ | 39.55 грн |
| NVH4L040N65S3F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 33.8mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 33.8mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| NVHL020N090SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній