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NVHL020N090SC1

NVHL020N090SC1 onsemi


nvhl020n090sc1-d.pdf Виробник: onsemi
Description: SICFET N-CH 900V 118A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 503W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
Qualification: AEC-Q101
на замовлення 282 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1762.55 грн
30+ 1548.09 грн
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Технічний опис NVHL020N090SC1 onsemi

Description: SICFET N-CH 900V 118A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 118A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V, Power Dissipation (Max): 503W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 20mA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -10V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V, Qualification: AEC-Q101.

Інші пропозиції NVHL020N090SC1 за ціною від 1772.01 грн до 1896.07 грн

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
NVHL020N090SC1 NVHL020N090SC1 Виробник : onsemi NVHL020N090SC1_D-2319755.pdf SiC MOSFETs 20MOHM 900V
на замовлення 373 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1896.07 грн
25+ 1772.01 грн
NVHL020N090SC1 NVHL020N090SC1 Виробник : ON Semiconductor nvhl020n090sc1-d.pdf Trans MOSFET N-CH SiC 900V 118A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
товар відсутній
NVHL020N090SC1 NVHL020N090SC1 Виробник : ON Semiconductor nvhl020n090sc1-d.pdf Trans MOSFET N-CH SiC 900V 118A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
товар відсутній
NVHL020N090SC1 NVHL020N090SC1 Виробник : ON Semiconductor nvhl020n090sc1-d.pdf Trans MOSFET N-CH SiC 900V 136A Automotive 3-Pin(3+Tab) TO-247 Tube
товар відсутній
NVHL020N090SC1 NVHL020N090SC1 Виробник : ONSEMI NVHL020N090SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
NVHL020N090SC1 NVHL020N090SC1 Виробник : ONSEMI NVHL020N090SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній