| Фото | Назва | Виробник | Інформація |
Доступність |
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QEE122 | ONSEMI |
 Category: IR LEDsDescription: IR transmitter; transparent; 9mW; 50°; λp max: 880nm; THT; 100mA Mounting: THT Dimensions: 4.44x2.54x5.08mm Shape: rectangular Optical power: 9mW Operating voltage: 1.7V Type of diode: IR transmitter LED lens: transparent LED current: 100mA Viewing angle: 50° LED version: angular Wavelength of peak sensitivity: 880nm кількість в упаковці: 1 шт |
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QEE123 | ONSEMI |
Category: IR LEDs Description: IR transmitter; transparent; 9mW; 50°; λp max: 880nm; THT; 100mA Mounting: THT Dimensions: 4.44x2.54x5.08mm Shape: rectangular Optical power: 9mW Operating voltage: 1.7V Type of diode: IR transmitter LED lens: transparent LED current: 100mA Viewing angle: 50° LED version: angular Wavelength of peak sensitivity: 880nm кількість в упаковці: 1 шт |
на замовлення 184 шт: термін постачання 14-21 дні (днів) |
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QRD1114 | ONSEMI |
 Category: PCB Photoelectric SensorsDescription: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB Type of sensor: photoelectric Operation mode: diffuse-reflective Output configuration: NPN Supply voltage: 5V DC Mounting: PCB Body dimensions: 4.39x6.1x4.65mm Operating temperature: -40...85°C кількість в упаковці: 1 шт |
на замовлення 3 шт: термін постачання 14-21 дні (днів) |
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| QSB34CGR | ONSEMI |
Category: Photodiodes Description: PIN photodiode; PLCC2; SMD; 940nm; 400÷1100nm; 120°; flat Type of photoelement: PIN photodiode Case: PLCC2 Mounting: SMD Wavelength of peak sensitivity: 940nm Wavelength: 400...1100nm Viewing angle: 120° Front: flat Dimensions: 3x3mm кількість в упаковці: 1 шт |
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| QSB34GR | ONSEMI |
Category: Photodiodes Description: PIN photodiode; PLCC2; SMD; 940nm; 730÷1100nm; 120°; flat Type of photoelement: PIN photodiode Case: PLCC2 Mounting: SMD Wavelength of peak sensitivity: 940nm Wavelength: 730...1100nm Viewing angle: 120° Front: flat Dimensions: 3x3mm кількість в упаковці: 1 шт |
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| QSB363GR | ONSEMI |
Category: Phototransistors Description: Phototransistor; 1.9mm; λp max: 940nm; 30V; 12°; Variant: axial LED diameter: 1.9mm LED lens: black with IR filter LED version: axial Viewing angle: 12° Type of photoelement: phototransistor Wavelength of peak sensitivity: 940nm Mounting: SMD Collector-emitter voltage: 30V кількість в упаковці: 1 шт |
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QSB363ZR | ONSEMI |
Category: Phototransistors Description: Phototransistor; 2mm; λp max: 940nm; 5V; 24°; Variant: axial Mounting: THT LED version: axial Viewing angle: 24° Type of photoelement: phototransistor Wavelength of peak sensitivity: 940nm Collector-emitter voltage: 5V LED diameter: 2mm LED lens: black with IR filter кількість в упаковці: 1 шт |
на замовлення 709 шт: термін постачання 14-21 дні (днів) |
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| QSD123 | ONSEMI |
QSD123 Phototransistors |
на замовлення 124 шт: термін постачання 14-21 дні (днів) |
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| QSD124 | ONSEMI |
QSD124 Phototransistors |
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QSD2030 | ONSEMI |
Category: Photodiodes Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex Mounting: THT LED diameter: 5mm Wavelength: 400...1100nm LED lens: transparent Viewing angle: 40° Type of photoelement: photodiode Wavelength of peak sensitivity: 880nm Front: convex Operating voltage: 1.3V кількість в упаковці: 1 шт |
на замовлення 228 шт: термін постачання 14-21 дні (днів) |
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QSD2030F | ONSEMI |
Category: Photodiodes Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black Mounting: THT LED diameter: 5mm Wavelength: 700...1100nm LED lens: black Viewing angle: 20° Type of photoelement: photodiode Wavelength of peak sensitivity: 880nm Front: convex Operating voltage: 1.3V кількість в упаковці: 1 шт |
на замовлення 1594 шт: термін постачання 14-21 дні (днів) |
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QSE113 | ONSEMI |
Category: Phototransistors Description: Phototransistor; 5mm; λp max: 880nm; 5V; 50° Mounting: THT Viewing angle: 50° Type of photoelement: phototransistor Collector-emitter voltage: 5V Wavelength of peak sensitivity: 880nm LED diameter: 5mm LED lens: black with IR filter кількість в упаковці: 1 шт |
на замовлення 141 шт: термін постачання 14-21 дні (днів) |
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| QSE113E3R0 | ONSEMI |
QSE113E3R0 Phototransistors |
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RB520S30T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Case: SOD523 Kind of package: reel; tape кількість в упаковці: 25 шт |
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RB521S30T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SOD523 Kind of package: reel; tape кількість в упаковці: 25 шт |
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RB751V40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SOD323; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Case: SOD323 Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 5697 шт: термін постачання 14-21 дні (днів) |
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RFD12N06RLESM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 49W Case: DPAK Gate-source voltage: ±16V On-state resistance: 75mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1484 шт: термін постачання 14-21 дні (днів) |
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RFD14N05LSM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 14A Power dissipation: 48W Case: DPAK Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 198 шт: термін постачання 14-21 дні (днів) |
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RFD14N05LSM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 14A Power dissipation: 48W Case: DPAK Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2263 шт: термін постачання 14-21 дні (днів) |
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RFD14N05SM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 14A Power dissipation: 48W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 8074 шт: термін постачання 14-21 дні (днів) |
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RFD16N05LSM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 16A Power dissipation: 60W Case: DPAK On-state resistance: 56mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2389 шт: термін постачання 14-21 дні (днів) |
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RFD16N05SM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 16A Power dissipation: 72W Case: DPAK Gate-source voltage: ±20V On-state resistance: 47mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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RFD16N06LESM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Power dissipation: 90W Case: DPAK Gate-source voltage: ±8V On-state resistance: 47mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 402 шт: термін постачання 14-21 дні (днів) |
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RFD3055LESM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 38W Case: DPAK Gate-source voltage: ±16V On-state resistance: 0.107Ω Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 641 шт: термін постачання 14-21 дні (днів) |
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RFP12N10L | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 41 шт: термін постачання 14-21 дні (днів) |
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RFP50N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 131W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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RFP70N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 70A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 156nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 132 шт: термін постачання 14-21 дні (днів) |
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RGF1A | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 50V Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Max. forward impulse current: 30A кількість в упаковці: 1 шт |
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RGF1B | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 100V Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Max. forward impulse current: 30A кількість в упаковці: 1 шт |
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RGF1D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 200V Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Max. forward impulse current: 30A кількість в упаковці: 1 шт |
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RGF1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 8.5pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.76W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 3847 шт: термін постачання 14-21 дні (днів) |
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RGF1J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 0.6kV Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 250ns Max. forward impulse current: 30A кількість в упаковці: 1 шт |
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RGF1M | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 8.5pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.76W Kind of package: reel; tape кількість в упаковці: 5 шт |
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RS1A | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Mounting: SMD Capacitance: 10pF Max. forward impulse current: 30A Case: DO214AC; SMA Kind of package: reel; tape Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 50V Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Power dissipation: 1.19W Type of diode: rectifying кількість в упаковці: 1 шт |
на замовлення 7819 шт: термін постачання 14-21 дні (днів) |
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RS1D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.19W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 7012 шт: термін постачання 14-21 дні (днів) |
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RS1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.19W Kind of package: reel; tape кількість в упаковці: 1 шт |
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RS1J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V Mounting: SMD Capacitance: 10pF Max. forward impulse current: 30A Case: DO214AC; SMA Kind of package: reel; tape Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 0.6kV Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 250ns Power dissipation: 1.19W Type of diode: rectifying кількість в упаковці: 1 шт |
на замовлення 794 шт: термін постачання 14-21 дні (днів) |
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RS1K | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.19W Kind of package: reel; tape кількість в упаковці: 1 шт |
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RS1M | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.19W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 5830 шт: термін постачання 14-21 дні (днів) |
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| RSL10-002GEVB | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; prototype board; Comp: RSL10 Type of development kit: evaluation Kit contents: prototype board Components: RSL10 Programmers and development kits features: Bluetooth board Interface: GPIO; I2C; SPI; UART Kind of connector: pin strips; pin strips; Pmod socket; USB micro кількість в упаковці: 1 шт |
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| RSL10-COIN-GEVB | ONSEMI | RSL10-COIN-GEVB Development kits - others |
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| RSL10-SENSE-DB-GEVK | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; Bluetooth board Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10 Programmers and development kits features: Bluetooth board Type of development kit: evaluation кількість в упаковці: 1 шт |
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| RSL10-SENSE-GEVK | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; Bluetooth board Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10 Programmers and development kits features: Bluetooth board Type of development kit: evaluation кількість в упаковці: 1 шт |
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| RSL10-SIP-001GEVB | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; prototype board; Comp: RSL10 Programmers and development kits features: Bluetooth board Type of development kit: evaluation Components: RSL10 Kind of connector: pin strips; pin strips; USB micro Kit contents: prototype board Interface: GPIO; I2C; SPI; UART кількість в упаковці: 1 шт |
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| RSL10-USB001GEVK | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; prototype board; Comp: RSL10 Type of development kit: evaluation Interface: USB Kind of connector: USB A plug Programmers and development kits features: Bluetooth board Components: RSL10 Kit contents: prototype board кількість в упаковці: 1 шт |
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| RURP15100-F085 | ONSEMI |
RURP15100-F085 THT universal diodes |
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S1AFL | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 1A Reverse recovery time: 2µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 4pF Case: SOD123F Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape кількість в упаковці: 1 шт |
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S1B | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 6.6pF Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Power dissipation: 1.4W Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 4810 шт: термін постачання 14-21 дні (днів) |
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S1BFL | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 2µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 4pF Case: SOD123F Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
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S1D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 6.6pF Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Power dissipation: 1.4W Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 3335 шт: термін постачання 14-21 дні (днів) |
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| S1G | ONSEMI |
S1G-FAI SMD universal diodes |
на замовлення 7498 шт: термін постачання 14-21 дні (днів) |
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| S1J | ONSEMI |
S1J-FAI SMD universal diodes |
товар відсутній |
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S1K | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 6.6pF Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Power dissipation: 1.4W Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 3285 шт: термін постачання 14-21 дні (днів) |
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S1M | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 6.6pF Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Power dissipation: 1.4W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 4600 шт: термін постачання 14-21 дні (днів) |
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S1MFL | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A Mounting: SMD Capacitance: 4pF Max. forward impulse current: 30A Case: SOD123F Kind of package: reel; tape Features of semiconductor devices: glass passivated Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 2µs Type of diode: rectifying кількість в упаковці: 10 шт |
товар відсутній |
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S2M | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 2A; SMB; Ifsm: 50A; 2.35W; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 2A Semiconductor structure: single diode Capacitance: 30pF Case: SMB Max. forward impulse current: 50A Power dissipation: 2.35W Kind of package: reel; tape кількість в упаковці: 10 шт |
на замовлення 710 шт: термін постачання 14-21 дні (днів) |
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| S3D | ONSEMI |
S3D-FAI SMD universal diodes |
на замовлення 2937 шт: термін постачання 14-21 дні (днів) |
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S3M | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Capacitance: 60pF Case: SMC Max. forward impulse current: 100A Power dissipation: 2.6W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 94 шт: термін постачання 14-21 дні (днів) |
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SBAS116LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 200mA; 3us; SOT23; Ufmax: 1.25V; Ir: 80nA Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 80nA Power dissipation: 0.225W Kind of package: reel; tape Application: automotive industry кількість в упаковці: 3000 шт |
товар відсутній |
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| SBAS16DXV6T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT563; Ufmax: 1.25V; 500mW Power dissipation: 0.5W Case: SOT563 Mounting: SMD Kind of package: reel; tape Semiconductor structure: double independent Max. off-state voltage: 100V Application: automotive industry Reverse recovery time: 6ns Capacitance: 2pF Max. forward voltage: 1.25V Load current: 0.2A Max. forward impulse current: 0.5A Leakage current: 30µA Type of diode: switching кількість в упаковці: 4000 шт |
товар відсутній |
| QEE122 |
|
Виробник: ONSEMI
Category: IR LEDs
Description: IR transmitter; transparent; 9mW; 50°; λp max: 880nm; THT; 100mA
Mounting: THT
Dimensions: 4.44x2.54x5.08mm
Shape: rectangular
Optical power: 9mW
Operating voltage: 1.7V
Type of diode: IR transmitter
LED lens: transparent
LED current: 100mA
Viewing angle: 50°
LED version: angular
Wavelength of peak sensitivity: 880nm
кількість в упаковці: 1 шт
Category: IR LEDs
Description: IR transmitter; transparent; 9mW; 50°; λp max: 880nm; THT; 100mA
Mounting: THT
Dimensions: 4.44x2.54x5.08mm
Shape: rectangular
Optical power: 9mW
Operating voltage: 1.7V
Type of diode: IR transmitter
LED lens: transparent
LED current: 100mA
Viewing angle: 50°
LED version: angular
Wavelength of peak sensitivity: 880nm
кількість в упаковці: 1 шт
товар відсутній
| QEE123 |
|
Виробник: ONSEMI
Category: IR LEDs
Description: IR transmitter; transparent; 9mW; 50°; λp max: 880nm; THT; 100mA
Mounting: THT
Dimensions: 4.44x2.54x5.08mm
Shape: rectangular
Optical power: 9mW
Operating voltage: 1.7V
Type of diode: IR transmitter
LED lens: transparent
LED current: 100mA
Viewing angle: 50°
LED version: angular
Wavelength of peak sensitivity: 880nm
кількість в упаковці: 1 шт
Category: IR LEDs
Description: IR transmitter; transparent; 9mW; 50°; λp max: 880nm; THT; 100mA
Mounting: THT
Dimensions: 4.44x2.54x5.08mm
Shape: rectangular
Optical power: 9mW
Operating voltage: 1.7V
Type of diode: IR transmitter
LED lens: transparent
LED current: 100mA
Viewing angle: 50°
LED version: angular
Wavelength of peak sensitivity: 880nm
кількість в упаковці: 1 шт
на замовлення 184 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.74 грн |
| 5+ | 55.91 грн |
| 25+ | 40.94 грн |
| 68+ | 38.68 грн |
| 500+ | 37.98 грн |
| QRD1114 | |
|
Виробник: ONSEMI
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
кількість в упаковці: 1 шт
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 170.74 грн |
| 10+ | 127.56 грн |
| 12+ | 90.6 грн |
| 31+ | 86.24 грн |
| 100+ | 82.76 грн |
| QSB34CGR |
|
Виробник: ONSEMI
Category: Photodiodes
Description: PIN photodiode; PLCC2; SMD; 940nm; 400÷1100nm; 120°; flat
Type of photoelement: PIN photodiode
Case: PLCC2
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 400...1100nm
Viewing angle: 120°
Front: flat
Dimensions: 3x3mm
кількість в упаковці: 1 шт
Category: Photodiodes
Description: PIN photodiode; PLCC2; SMD; 940nm; 400÷1100nm; 120°; flat
Type of photoelement: PIN photodiode
Case: PLCC2
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 400...1100nm
Viewing angle: 120°
Front: flat
Dimensions: 3x3mm
кількість в упаковці: 1 шт
товар відсутній
| QSB34GR |
|
Виробник: ONSEMI
Category: Photodiodes
Description: PIN photodiode; PLCC2; SMD; 940nm; 730÷1100nm; 120°; flat
Type of photoelement: PIN photodiode
Case: PLCC2
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 730...1100nm
Viewing angle: 120°
Front: flat
Dimensions: 3x3mm
кількість в упаковці: 1 шт
Category: Photodiodes
Description: PIN photodiode; PLCC2; SMD; 940nm; 730÷1100nm; 120°; flat
Type of photoelement: PIN photodiode
Case: PLCC2
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 730...1100nm
Viewing angle: 120°
Front: flat
Dimensions: 3x3mm
кількість в упаковці: 1 шт
товар відсутній
| QSB363GR |
|
Виробник: ONSEMI
Category: Phototransistors
Description: Phototransistor; 1.9mm; λp max: 940nm; 30V; 12°; Variant: axial
LED diameter: 1.9mm
LED lens: black with IR filter
LED version: axial
Viewing angle: 12°
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 940nm
Mounting: SMD
Collector-emitter voltage: 30V
кількість в упаковці: 1 шт
Category: Phototransistors
Description: Phototransistor; 1.9mm; λp max: 940nm; 30V; 12°; Variant: axial
LED diameter: 1.9mm
LED lens: black with IR filter
LED version: axial
Viewing angle: 12°
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 940nm
Mounting: SMD
Collector-emitter voltage: 30V
кількість в упаковці: 1 шт
товар відсутній
| QSB363ZR |
|
Виробник: ONSEMI
Category: Phototransistors
Description: Phototransistor; 2mm; λp max: 940nm; 5V; 24°; Variant: axial
Mounting: THT
LED version: axial
Viewing angle: 24°
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 940nm
Collector-emitter voltage: 5V
LED diameter: 2mm
LED lens: black with IR filter
кількість в упаковці: 1 шт
Category: Phototransistors
Description: Phototransistor; 2mm; λp max: 940nm; 5V; 24°; Variant: axial
Mounting: THT
LED version: axial
Viewing angle: 24°
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 940nm
Collector-emitter voltage: 5V
LED diameter: 2mm
LED lens: black with IR filter
кількість в упаковці: 1 шт
на замовлення 709 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 43.72 грн |
| 11+ | 25.33 грн |
| 50+ | 20.12 грн |
| 57+ | 17.86 грн |
| 156+ | 16.9 грн |
| 1000+ | 16.46 грн |
| QSD123 |
|
Виробник: ONSEMI
QSD123 Phototransistors
QSD123 Phototransistors
на замовлення 124 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.67 грн |
| 48+ | 21.17 грн |
| 132+ | 20.04 грн |
| QSD2030 |
|
Виробник: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Mounting: THT
LED diameter: 5mm
Wavelength: 400...1100nm
LED lens: transparent
Viewing angle: 40°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Operating voltage: 1.3V
кількість в упаковці: 1 шт
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Mounting: THT
LED diameter: 5mm
Wavelength: 400...1100nm
LED lens: transparent
Viewing angle: 40°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Operating voltage: 1.3V
кількість в упаковці: 1 шт
на замовлення 228 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 98.51 грн |
| 10+ | 27.5 грн |
| 25+ | 21.87 грн |
| 49+ | 20.99 грн |
| 100+ | 19.34 грн |
| 500+ | 19.08 грн |
| QSD2030F |
|
Виробник: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Mounting: THT
LED diameter: 5mm
Wavelength: 700...1100nm
LED lens: black
Viewing angle: 20°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Operating voltage: 1.3V
кількість в упаковці: 1 шт
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Mounting: THT
LED diameter: 5mm
Wavelength: 700...1100nm
LED lens: black
Viewing angle: 20°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Operating voltage: 1.3V
кількість в упаковці: 1 шт
на замовлення 1594 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 75.99 грн |
| 7+ | 42.16 грн |
| 25+ | 27.01 грн |
| 49+ | 20.78 грн |
| 135+ | 19.64 грн |
| QSE113 |
|
Виробник: ONSEMI
Category: Phototransistors
Description: Phototransistor; 5mm; λp max: 880nm; 5V; 50°
Mounting: THT
Viewing angle: 50°
Type of photoelement: phototransistor
Collector-emitter voltage: 5V
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
LED lens: black with IR filter
кількість в упаковці: 1 шт
Category: Phototransistors
Description: Phototransistor; 5mm; λp max: 880nm; 5V; 50°
Mounting: THT
Viewing angle: 50°
Type of photoelement: phototransistor
Collector-emitter voltage: 5V
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
LED lens: black with IR filter
кількість в упаковці: 1 шт
на замовлення 141 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.13 грн |
| 10+ | 57.35 грн |
| 35+ | 29.15 грн |
| 96+ | 27.56 грн |
| RB520S30T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD523
Kind of package: reel; tape
кількість в упаковці: 25 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD523
Kind of package: reel; tape
кількість в упаковці: 25 шт
товар відсутній
| RB521S30T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SOD523
Kind of package: reel; tape
кількість в упаковці: 25 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SOD523
Kind of package: reel; tape
кількість в упаковці: 25 шт
товар відсутній
| RB751V40T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Case: SOD323
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Case: SOD323
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 5697 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 74+ | 3.85 грн |
| 100+ | 3.34 грн |
| 430+ | 2.33 грн |
| 1181+ | 2.21 грн |
| RFD12N06RLESM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1484 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 78.8 грн |
| 10+ | 61.97 грн |
| 22+ | 47.18 грн |
| 60+ | 44.61 грн |
| 250+ | 43.21 грн |
| 500+ | 42.86 грн |
| RFD14N05LSM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 198 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 71.02 грн |
| 22+ | 47.95 грн |
| 61+ | 43.56 грн |
| 750+ | 43.21 грн |
| RFD14N05LSM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2263 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 97.57 грн |
| 6+ | 46.5 грн |
| 25+ | 35.89 грн |
| 33+ | 31.24 грн |
| 90+ | 29.54 грн |
| RFD14N05SM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 8074 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.9 грн |
| 6+ | 51.93 грн |
| 25+ | 40.07 грн |
| 28+ | 37.08 грн |
| 76+ | 35.06 грн |
| 500+ | 33.71 грн |
| RFD16N05LSM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 16A
Power dissipation: 60W
Case: DPAK
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 16A
Power dissipation: 60W
Case: DPAK
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2389 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.95 грн |
| 5+ | 64.95 грн |
| 20+ | 51.92 грн |
| 54+ | 49.09 грн |
| 500+ | 47.04 грн |
| RFD16N05SM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 16A
Power dissipation: 72W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 16A
Power dissipation: 72W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| RFD16N06LESM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±8V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±8V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 402 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.71 грн |
| 5+ | 107.65 грн |
| 11+ | 94.67 грн |
| 25+ | 93.21 грн |
| 30+ | 89.51 грн |
| 100+ | 87.99 грн |
| 500+ | 86.24 грн |
| RFD3055LESM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 641 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 98.51 грн |
| 7+ | 44.69 грн |
| 25+ | 34.58 грн |
| 34+ | 30.4 грн |
| 93+ | 28.66 грн |
| RFP12N10L | |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 41 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 102.26 грн |
| 5+ | 78.7 грн |
| 17+ | 60.11 грн |
| 47+ | 56.62 грн |
| 500+ | 54.01 грн |
| RFP50N06 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 131W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 131W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RFP70N06 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 132 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 186.69 грн |
| 3+ | 162.84 грн |
| 9+ | 125.44 грн |
| 23+ | 118.48 грн |
| 250+ | 115.86 грн |
| RGF1A |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Power dissipation: 1.76W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: SMA
Capacitance: 8.5pF
Max. off-state voltage: 50V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Max. forward impulse current: 30A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Power dissipation: 1.76W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: SMA
Capacitance: 8.5pF
Max. off-state voltage: 50V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Max. forward impulse current: 30A
кількість в упаковці: 1 шт
товар відсутній
| RGF1B |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Power dissipation: 1.76W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: SMA
Capacitance: 8.5pF
Max. off-state voltage: 100V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Max. forward impulse current: 30A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Power dissipation: 1.76W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: SMA
Capacitance: 8.5pF
Max. off-state voltage: 100V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Max. forward impulse current: 30A
кількість в упаковці: 1 шт
товар відсутній
| RGF1D |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Power dissipation: 1.76W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: SMA
Capacitance: 8.5pF
Max. off-state voltage: 200V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Max. forward impulse current: 30A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Power dissipation: 1.76W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: SMA
Capacitance: 8.5pF
Max. off-state voltage: 200V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Max. forward impulse current: 30A
кількість в упаковці: 1 шт
товар відсутній
| RGF1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 3847 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 25.14 грн |
| 25+ | 19.09 грн |
| 73+ | 14.11 грн |
| 199+ | 13.34 грн |
| RGF1J |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Power dissipation: 1.76W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: SMA
Capacitance: 8.5pF
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Max. forward impulse current: 30A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Power dissipation: 1.76W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: SMA
Capacitance: 8.5pF
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Max. forward impulse current: 30A
кількість в упаковці: 1 шт
товар відсутній
| RGF1M |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
| RS1A |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Kind of package: reel; tape
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 50V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Power dissipation: 1.19W
Type of diode: rectifying
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Kind of package: reel; tape
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 50V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Power dissipation: 1.19W
Type of diode: rectifying
кількість в упаковці: 1 шт
на замовлення 7819 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 15.2 грн |
| 50+ | 13.3 грн |
| 103+ | 9.86 грн |
| 283+ | 9.32 грн |
| RS1D |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.19W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.19W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 7012 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.09 грн |
| 13+ | 21.17 грн |
| 25+ | 12.2 грн |
| 100+ | 10.89 грн |
| 112+ | 9.15 грн |
| 308+ | 8.62 грн |
| 7500+ | 8.36 грн |
| RS1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.19W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.19W
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| RS1J |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Kind of package: reel; tape
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Power dissipation: 1.19W
Type of diode: rectifying
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Kind of package: reel; tape
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Power dissipation: 1.19W
Type of diode: rectifying
кількість в упаковці: 1 шт
на замовлення 794 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 40.34 грн |
| 12+ | 24.06 грн |
| 25+ | 16.2 грн |
| 100+ | 9.76 грн |
| 145+ | 7.14 грн |
| 397+ | 6.71 грн |
| RS1K |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.19W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.19W
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| RS1M |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.19W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.19W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 5830 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 27.21 грн |
| 15+ | 18.36 грн |
| 50+ | 10.54 грн |
| 100+ | 8.45 грн |
| 171+ | 5.99 грн |
| 470+ | 5.67 грн |
| RSL10-002GEVB |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Type of development kit: evaluation
Kit contents: prototype board
Components: RSL10
Programmers and development kits features: Bluetooth board
Interface: GPIO; I2C; SPI; UART
Kind of connector: pin strips; pin strips; Pmod socket; USB micro
кількість в упаковці: 1 шт
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Type of development kit: evaluation
Kit contents: prototype board
Components: RSL10
Programmers and development kits features: Bluetooth board
Interface: GPIO; I2C; SPI; UART
Kind of connector: pin strips; pin strips; Pmod socket; USB micro
кількість в упаковці: 1 шт
товар відсутній
| RSL10-SENSE-DB-GEVK |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
кількість в упаковці: 1 шт
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
кількість в упаковці: 1 шт
товар відсутній
| RSL10-SENSE-GEVK |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
кількість в упаковці: 1 шт
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
кількість в упаковці: 1 шт
товар відсутній
| RSL10-SIP-001GEVB |
Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
Components: RSL10
Kind of connector: pin strips; pin strips; USB micro
Kit contents: prototype board
Interface: GPIO; I2C; SPI; UART
кількість в упаковці: 1 шт
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
Components: RSL10
Kind of connector: pin strips; pin strips; USB micro
Kit contents: prototype board
Interface: GPIO; I2C; SPI; UART
кількість в упаковці: 1 шт
товар відсутній
| RSL10-USB001GEVK |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Type of development kit: evaluation
Interface: USB
Kind of connector: USB A plug
Programmers and development kits features: Bluetooth board
Components: RSL10
Kit contents: prototype board
кількість в упаковці: 1 шт
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Type of development kit: evaluation
Interface: USB
Kind of connector: USB A plug
Programmers and development kits features: Bluetooth board
Components: RSL10
Kit contents: prototype board
кількість в упаковці: 1 шт
товар відсутній
| S1AFL |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| S1B |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6.6pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Power dissipation: 1.4W
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6.6pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Power dissipation: 1.4W
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 4810 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.89 грн |
| 35+ | 7.87 грн |
| 100+ | 6.97 грн |
| 180+ | 5.82 грн |
| 485+ | 5.5 грн |
| S1BFL |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| S1D |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6.6pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Power dissipation: 1.4W
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6.6pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Power dissipation: 1.4W
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 3335 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 10.69 грн |
| 50+ | 6.68 грн |
| 195+ | 5.2 грн |
| 535+ | 4.92 грн |
| 7500+ | 4.75 грн |
| S1G |
|
Виробник: ONSEMI
S1G-FAI SMD universal diodes
S1G-FAI SMD universal diodes
на замовлення 7498 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.09 грн |
| 180+ | 5.66 грн |
| 495+ | 5.31 грн |
| S1K |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6.6pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Power dissipation: 1.4W
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6.6pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Power dissipation: 1.4W
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 3285 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 13.51 грн |
| 50+ | 7.15 грн |
| 180+ | 5.73 грн |
| 485+ | 5.41 грн |
| 7500+ | 5.23 грн |
| S1M |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6.6pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Power dissipation: 1.4W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6.6pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Power dissipation: 1.4W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 4600 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 26+ | 11.07 грн |
| 50+ | 6.98 грн |
| 216+ | 4.66 грн |
| 594+ | 4.4 грн |
| S1MFL |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Capacitance: 4pF
Max. forward impulse current: 30A
Case: SOD123F
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 2µs
Type of diode: rectifying
кількість в упаковці: 10 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Capacitance: 4pF
Max. forward impulse current: 30A
Case: SOD123F
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 2µs
Type of diode: rectifying
кількість в упаковці: 10 шт
товар відсутній
| S2M |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; SMB; Ifsm: 50A; 2.35W; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Capacitance: 30pF
Case: SMB
Max. forward impulse current: 50A
Power dissipation: 2.35W
Kind of package: reel; tape
кількість в упаковці: 10 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; SMB; Ifsm: 50A; 2.35W; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Capacitance: 30pF
Case: SMB
Max. forward impulse current: 50A
Power dissipation: 2.35W
Kind of package: reel; tape
кількість в упаковці: 10 шт
на замовлення 710 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.04 грн |
| 50+ | 10.31 грн |
| 130+ | 8.17 грн |
| 340+ | 7.74 грн |
| 3000+ | 7.4 грн |
| S3D |
|
Виробник: ONSEMI
S3D-FAI SMD universal diodes
S3D-FAI SMD universal diodes
на замовлення 2937 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.09 грн |
| 70+ | 14.55 грн |
| 192+ | 13.76 грн |
| S3M |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Case: SMC
Max. forward impulse current: 100A
Power dissipation: 2.6W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Case: SMC
Max. forward impulse current: 100A
Power dissipation: 2.6W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 94 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.06 грн |
| 25+ | 20.72 грн |
| 76+ | 13.17 грн |
| 209+ | 12.45 грн |
| SBAS116LT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 200mA; 3us; SOT23; Ufmax: 1.25V; Ir: 80nA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 3000 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 200mA; 3us; SOT23; Ufmax: 1.25V; Ir: 80nA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 3000 шт
товар відсутній
| SBAS16DXV6T1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT563; Ufmax: 1.25V; 500mW
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double independent
Max. off-state voltage: 100V
Application: automotive industry
Reverse recovery time: 6ns
Capacitance: 2pF
Max. forward voltage: 1.25V
Load current: 0.2A
Max. forward impulse current: 0.5A
Leakage current: 30µA
Type of diode: switching
кількість в упаковці: 4000 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT563; Ufmax: 1.25V; 500mW
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double independent
Max. off-state voltage: 100V
Application: automotive industry
Reverse recovery time: 6ns
Capacitance: 2pF
Max. forward voltage: 1.25V
Load current: 0.2A
Max. forward impulse current: 0.5A
Leakage current: 30µA
Type of diode: switching
кількість в упаковці: 4000 шт
товар відсутній