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APT10045LLLG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Mounting: THT
Case: TO264
Technology: POWER MOS 7®
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Mounting: THT
Case: TO264
Technology: POWER MOS 7®
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
кількість в упаковці: 1 шт
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Технічний опис APT10045LLLG MICROCHIP (MICROSEMI)
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264, Mounting: THT, Case: TO264, Technology: POWER MOS 7®, Gate charge: 154nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 92A, Drain-source voltage: 1kV, Drain current: 23A, On-state resistance: 0.45Ω, Type of transistor: N-MOSFET, Power dissipation: 565W, Polarisation: unipolar, кількість в упаковці: 1 шт.
Інші пропозиції APT10045LLLG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
APT10045LLLG | Виробник : Microchip / Microsemi | Discrete Semiconductor Modules FG, MOSFET,1000V, TO-264, RoHS |
товар відсутній |
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APT10045LLLG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264 Mounting: THT Case: TO264 Technology: POWER MOS 7® Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar |
товар відсутній |