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APT10078SLLG MICROCHIP (MICROSEMI)
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK
Mounting: SMD
Case: D3PAK
Technology: POWER MOS 7®
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 56A
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 780mΩ
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
кількість в упаковці: 1 шт
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Технічний опис APT10078SLLG MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 1000V 14A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 780mOhm @ 7A, 10V, Power Dissipation (Max): 403W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: D3 [S], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 25 V.
Інші пропозиції APT10078SLLG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT10078SLLG | Виробник : MICROSEMI |
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товар відсутній |
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APT10078SLLG | Виробник : Microchip Technology |
![]() Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 780mOhm @ 7A, 10V Power Dissipation (Max): 403W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3 [S] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 25 V |
товар відсутній |
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APT10078SLLG | Виробник : Microchip Technology |
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товар відсутній |
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APT10078SLLG | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK Mounting: SMD Case: D3PAK Technology: POWER MOS 7® Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 56A Drain-source voltage: 1kV Drain current: 14A On-state resistance: 780mΩ Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar |
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