Фото | Назва | Виробник | Інформація |
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IS42S32400F-7TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 143MHz; 7ns; TSOP86 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 143MHz Access time: 7ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC кількість в упаковці: 1 шт |
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IS42S32800J-7TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 8Mx32bit; 143MHz; 7ns; TSOP86 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 8Mx32bit Clock frequency: 143MHz Access time: 7ns Case: TSOP86 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC кількість в упаковці: 1 шт |
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IS42S32800J-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 8Mx32bit; 143MHz; 7ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 8Mx32bit Clock frequency: 143MHz Access time: 7ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3.3V DC кількість в упаковці: 1500 шт |
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IS42S81600F-7TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx8bitx4; 143MHz; 7ns; TSOP54 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx8bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC кількість в упаковці: 1 шт |
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IS43R16160D-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx32bit Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 2.5V DC кількість в упаковці: 1 шт |
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IS43R16160D-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx32bit Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: tube Supply voltage: 2.5V DC кількість в упаковці: 1 шт |
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IS43R16320D-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 32Mx16bit Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: tube Supply voltage: 2.5V DC кількість в упаковці: 1 шт |
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IS43R16800E-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 166MHz; 6ns; TSOP66 II; -40÷85°C; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bit Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: tube Supply voltage: 2.5V DC |
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IS45S16400J-7TLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC кількість в упаковці: 1 шт |
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IS61C1024AL-12JLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 12ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Part status: Obsolete Operating voltage: 5V кількість в упаковці: 1 шт |
на замовлення 69 шт: термін постачання 14-21 дні (днів) |
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IS61C1024AL-12TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 12ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V кількість в упаковці: 1 шт |
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IS61C25616AS-25TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 5V; 25ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Kind of interface: parallel Memory: 4Mb SRAM Operating voltage: 5V Kind of memory: SRAM Access time: 25ns кількість в упаковці: 1 шт |
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IS61C256AL-12JLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel Operating temperature: -40...85°C Kind of interface: parallel Memory: 256kb SRAM Mounting: SMD Case: SOJ28 Operating voltage: 5V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Access time: 12ns кількість в упаковці: 1 шт |
на замовлення 205 шт: термін постачання 14-21 дні (днів) |
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IS61C256AL-12JLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel Operating temperature: -40...85°C Kind of interface: parallel Memory: 256kb SRAM Mounting: SMD Case: SOJ28 Operating voltage: 5V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Access time: 12ns кількість в упаковці: 1000 шт |
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IS61C256AL-12TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32kx8bit; 5V; 12ns; TSOP28; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Access time: 12ns Case: TSOP28 Kind of interface: parallel Memory capacity: 256kb Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V кількість в упаковці: 1 шт |
на замовлення 215 шт: термін постачання 14-21 дні (днів) |
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IS61LV12824-10TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 10ns; TQFP100; parallel Case: TQFP100 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V Kind of interface: parallel Memory: 3Mb SRAM Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx24bit Access time: 10ns кількість в упаковці: 1 шт |
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IS61LV256AL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel Case: TSOP28 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V Kind of interface: parallel Memory: 256kb SRAM Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Access time: 10ns кількість в упаковці: 1 шт |
на замовлення 78 шт: термін постачання 14-21 дні (днів) |
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IS62C10248AL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 4.5÷5.5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 4.5...5.5V кількість в упаковці: 1 шт |
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IS62C1024AL-35QLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 35ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 35ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating voltage: 4.5...5.5V кількість в упаковці: 1 шт |
на замовлення 89 шт: термін постачання 14-21 дні (днів) |
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IS62C256AL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Access time: 45ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V кількість в упаковці: 1 шт |
на замовлення 76 шт: термін постачання 14-21 дні (днів) |
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IS62C256AL-45ULI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Access time: 45ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V кількість в упаковці: 1 шт |
на замовлення 73 шт: термін постачання 14-21 дні (днів) |
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IS62C51216AL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 4.5÷5.5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 4.5...5.5V кількість в упаковці: 1 шт |
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IS62LV256AL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Access time: 45ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V кількість в упаковці: 1 шт |
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IS62LV256AL-45ULI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Access time: 45ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 28 шт: термін постачання 14-21 дні (днів) |
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IS62WV1288BLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 55ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 55ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 57 шт: термін постачання 14-21 дні (днів) |
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IS62WV2568BLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Case: TSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.5...3.6V Access time: 55ns кількість в упаковці: 1 шт |
на замовлення 134 шт: термін постачання 14-21 дні (днів) |
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IS62WV51216BLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx16bit Access time: 55ns Kind of interface: parallel Memory: 8Mb SRAM Mounting: SMD Case: TSOP44 кількість в упаковці: 1 шт |
на замовлення 2949 шт: термін постачання 14-21 дні (днів) |
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IS62WV6416BLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V кількість в упаковці: 1 шт |
на замовлення 133 шт: термін постачання 14-21 дні (днів) |
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IS63WV1024BLL-12TLI | ISSI | IS63WV1024BLL-12TL Parallel SRAM memories - integ. circ. |
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IS61LF102418B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 7.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Access time: 7.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V кількість в упаковці: 72 шт |
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IS61LF102418B-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 7.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Access time: 7.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 3.3V кількість в упаковці: 800 шт |
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IS64LF102436B-7.5TQLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 1Mx36bit Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 3.3V кількість в упаковці: 72 шт |
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IS64LF102436B-7.5TQLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 1Mx36bit Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 3.3V кількість в упаковці: 800 шт |
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IS61LF102436B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 1Mx36bit Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V кількість в упаковці: 72 шт |
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IS64LF12832A-7.5TQLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Operating temperature: -40...125°C Operating voltage: 3.3V Memory: 4Mb SRAM Mounting: SMD Case: QFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel кількість в упаковці: 72 шт |
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IS64LF12832A-7.5TQLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Operating temperature: -40...125°C Operating voltage: 3.3V Memory: 4Mb SRAM Mounting: SMD Case: QFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel кількість в упаковці: 800 шт |
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IS64LF12832EC-7.5TQLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Kind of package: in-tray; tube Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 7.5ns Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...125°C Case: QFP100 Type of integrated circuit: SRAM memory кількість в упаковці: 72 шт |
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IS64LF12836A-7.5B3LA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of interface: parallel Memory: 4.5Mb SRAM кількість в упаковці: 2000 шт |
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IS61LF12836A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of interface: parallel Memory: 4.5Mb SRAM кількість в упаковці: 72 шт |
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IS61LF12836A-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of interface: parallel Memory: 4.5Mb SRAM кількість в упаковці: 800 шт |
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IS61LF12836EC-6.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 6.5ns Kind of interface: parallel Memory: 4.5Mb SRAM кількість в упаковці: 72 шт |
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IS64LF12836EC-7.5B3LA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of interface: parallel Memory: 4.5Mb SRAM кількість в упаковці: 144 шт |
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IS61LF12836EC-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of interface: parallel Memory: 4.5Mb SRAM кількість в упаковці: 800 шт |
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IS64LF204818B-7.5TQLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel Operating temperature: -40...125°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 36Mb SRAM Mounting: SMD Case: TQFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx18bit Access time: 7.5ns кількість в упаковці: 72 шт |
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IS61LF204818B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 36Mb SRAM Mounting: SMD Case: TQFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx18bit Access time: 7.5ns кількість в упаковці: 72 шт |
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IS61LF204836B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 7.5ns; TQFP100; parallel Kind of package: in-tray; tube Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx36bit Access time: 7.5ns Kind of interface: parallel Memory: 72Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: TQFP100 Operating voltage: 3.3V кількість в упаковці: 72 шт |
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IS61LF25618A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100 Operating temperature: -40...85°C Mounting: SMD Operating voltage: 3.3V Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Case: QFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx18bit Access time: 7.5ns кількість в упаковці: 72 шт |
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IS61LF25618A-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100 Operating temperature: -40...85°C Mounting: SMD Operating voltage: 3.3V Kind of package: reel; tape Kind of interface: parallel Memory: 4.5Mb SRAM Case: QFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx18bit Access time: 7.5ns кількість в упаковці: 800 шт |
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IS64LF25636A-7.5B3LA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; PBGA165 Operating temperature: -40...125°C Mounting: SMD Operating voltage: 3.3V Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Case: PBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns кількість в упаковці: 144 шт |
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IS64LF25636A-7.5TQLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...125°C Mounting: SMD Operating voltage: 3.3V Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Case: TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns кількість в упаковці: 72 шт |
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IS64LF25636A-7.5TQLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...125°C Mounting: SMD Operating voltage: 3.3V Kind of package: reel; tape Kind of interface: parallel Memory: 9Mb SRAM Case: TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns кількість в упаковці: 800 шт |
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IS61LF25636A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...85°C Mounting: SMD Operating voltage: 3.3V Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Case: TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns кількість в упаковці: 72 шт |
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IS61LF25636A-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...85°C Mounting: SMD Operating voltage: 3.3V Kind of package: reel; tape Kind of interface: parallel Memory: 9Mb SRAM Case: TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns кількість в упаковці: 800 шт |
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IS61LF25636B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel Operating temperature: -40...85°C Mounting: SMD Operating voltage: 3.3V Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Case: QFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns кількість в упаковці: 72 шт |
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IS61LF25636B-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel Operating temperature: -40...85°C Mounting: SMD Operating voltage: 3.3V Kind of package: reel; tape Kind of interface: parallel Memory: 9Mb SRAM Case: QFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns кількість в упаковці: 800 шт |
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IS61LF51218A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Case: TQFP100 Operating voltage: 3.3V кількість в упаковці: 72 шт |
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IS61LF51218A-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 9Mb SRAM Case: TQFP100 Operating voltage: 3.3V кількість в упаковці: 800 шт |
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IS61LF51218B-7.5TQLI | ISSI | LF51218B7.5TQLI Parallel SRAM memories - integ. circ. |
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IS61LF51218B-7.5TQLI-TR | ISSI | LF51218B7.5TQLITR Parallel SRAM memories - integ. circ. |
товар відсутній |
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IS61LF51236B-6.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 6.5ns кількість в упаковці: 72 шт |
товар відсутній |
IS42S32400F-7TLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 143MHz; 7ns; TSOP86 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 143MHz; 7ns; TSOP86 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
кількість в упаковці: 1 шт
товар відсутній
IS42S32800J-7TL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx32bit; 143MHz; 7ns; TSOP86 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 8Mx32bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx32bit; 143MHz; 7ns; TSOP86 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 8Mx32bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
кількість в упаковці: 1 шт
товар відсутній
IS42S32800J-7TLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx32bit; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 8Mx32bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx32bit; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 8Mx32bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
кількість в упаковці: 1500 шт
товар відсутній
IS42S81600F-7TL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx8bitx4; 143MHz; 7ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx8bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx8bitx4; 143MHz; 7ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx8bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
кількість в упаковці: 1 шт
товар відсутній
IS43R16160D-6TL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 2.5V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 2.5V DC
кількість в упаковці: 1 шт
товар відсутній
IS43R16160D-6TLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 2.5V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 2.5V DC
кількість в упаковці: 1 шт
товар відсутній
IS43R16320D-6TLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 2.5V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 2.5V DC
кількість в упаковці: 1 шт
товар відсутній
IS43R16800E-6TLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 166MHz; 6ns; TSOP66 II; -40÷85°C; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 166MHz; 6ns; TSOP66 II; -40÷85°C; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 2.5V DC
товар відсутній
IS45S16400J-7TLA2 |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
кількість в упаковці: 1 шт
товар відсутній
IS61C1024AL-12JLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Part status: Obsolete
Operating voltage: 5V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Part status: Obsolete
Operating voltage: 5V
кількість в упаковці: 1 шт
на замовлення 69 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 252.48 грн |
5+ | 239.76 грн |
22+ | 227.31 грн |
IS61C1024AL-12TLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
кількість в упаковці: 1 шт
товар відсутній
IS61C25616AS-25TLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 5V; 25ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Access time: 25ns
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 5V; 25ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Access time: 25ns
кількість в упаковці: 1 шт
товар відсутній
IS61C256AL-12JLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256kb SRAM
Mounting: SMD
Case: SOJ28
Operating voltage: 5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 12ns
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256kb SRAM
Mounting: SMD
Case: SOJ28
Operating voltage: 5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 12ns
кількість в упаковці: 1 шт
на замовлення 205 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 235.2 грн |
5+ | 197.18 грн |
25+ | 150.65 грн |
1000+ | 139.06 грн |
IS61C256AL-12JLI-TR |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256kb SRAM
Mounting: SMD
Case: SOJ28
Operating voltage: 5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 12ns
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256kb SRAM
Mounting: SMD
Case: SOJ28
Operating voltage: 5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 12ns
кількість в упаковці: 1000 шт
товар відсутній
IS61C256AL-12TLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32kx8bit; 5V; 12ns; TSOP28; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 12ns
Case: TSOP28
Kind of interface: parallel
Memory capacity: 256kb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32kx8bit; 5V; 12ns; TSOP28; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 12ns
Case: TSOP28
Kind of interface: parallel
Memory capacity: 256kb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
кількість в упаковці: 1 шт
на замовлення 215 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 144.96 грн |
5+ | 135.15 грн |
9+ | 122.13 грн |
23+ | 115.89 грн |
IS61LV12824-10TQLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 10ns; TQFP100; parallel
Case: TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 3Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx24bit
Access time: 10ns
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 10ns; TQFP100; parallel
Case: TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 3Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx24bit
Access time: 10ns
кількість в упаковці: 1 шт
товар відсутній
IS61LV256AL-10TLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel
Case: TSOP28
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 10ns
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel
Case: TSOP28
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 10ns
кількість в упаковці: 1 шт
на замовлення 78 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 127.68 грн |
5+ | 119.42 грн |
10+ | 108.75 грн |
25+ | 102.51 грн |
IS62C10248AL-55TLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 4.5÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 4.5...5.5V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 4.5÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 4.5...5.5V
кількість в упаковці: 1 шт
товар відсутній
IS62C1024AL-35QLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 35ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 35ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating voltage: 4.5...5.5V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 35ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 35ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating voltage: 4.5...5.5V
кількість в упаковці: 1 шт
на замовлення 89 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 383.04 грн |
3+ | 342.51 грн |
5+ | 247.82 грн |
12+ | 234.45 грн |
84+ | 222.86 грн |
IS62C256AL-45TLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
кількість в упаковці: 1 шт
на замовлення 76 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 122.88 грн |
5+ | 113.86 грн |
25+ | 102.51 грн |
IS62C256AL-45ULI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
кількість в упаковці: 1 шт
на замовлення 73 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 127.75 грн |
10+ | 114.99 грн |
25+ | 108.75 грн |
120+ | 105.19 грн |
IS62C51216AL-55TLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 4.5÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 4.5...5.5V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 4.5÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 4.5...5.5V
кількість в упаковці: 1 шт
товар відсутній
IS62LV256AL-45TLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
кількість в упаковці: 1 шт
товар відсутній
IS62LV256AL-45ULI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 185.28 грн |
5+ | 167.55 грн |
9+ | 118.56 грн |
24+ | 112.32 грн |
IS62WV1288BLL-55TLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 55ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 55ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 57 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 250.56 грн |
3+ | 211.06 грн |
8+ | 147.09 грн |
20+ | 139.06 грн |
IS62WV2568BLL-55TLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Access time: 55ns
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Access time: 55ns
кількість в упаковці: 1 шт
на замовлення 134 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 245.76 грн |
5+ | 227.73 грн |
13+ | 207.7 грн |
25+ | 199.68 грн |
IS62WV51216BLL-55TLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb SRAM
Mounting: SMD
Case: TSOP44
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb SRAM
Mounting: SMD
Case: TSOP44
кількість в упаковці: 1 шт
на замовлення 2949 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 666.24 грн |
2+ | 622.08 грн |
5+ | 566.95 грн |
25+ | 566.06 грн |
100+ | 543.77 грн |
IS62WV6416BLL-55TLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
кількість в упаковці: 1 шт
на замовлення 133 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 309.12 грн |
5+ | 235.13 грн |
13+ | 213.94 грн |
IS63WV1024BLL-12TLI |
Виробник: ISSI
IS63WV1024BLL-12TL Parallel SRAM memories - integ. circ.
IS63WV1024BLL-12TL Parallel SRAM memories - integ. circ.
товар відсутній
IS61LF102418B-7.5TQLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Access time: 7.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Access time: 7.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
IS61LF102418B-7.5TQLI-TR |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Access time: 7.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Access time: 7.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
кількість в упаковці: 800 шт
товар відсутній
IS64LF102436B-7.5TQLA3 |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
IS64LF102436B-7.5TQLA3-TR |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 3.3V
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 3.3V
кількість в упаковці: 800 шт
товар відсутній
IS61LF102436B-7.5TQLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
IS64LF12832A-7.5TQLA3 |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...125°C
Operating voltage: 3.3V
Memory: 4Mb SRAM
Mounting: SMD
Case: QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...125°C
Operating voltage: 3.3V
Memory: 4Mb SRAM
Mounting: SMD
Case: QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
кількість в упаковці: 72 шт
товар відсутній
IS64LF12832A-7.5TQLA3-TR |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...125°C
Operating voltage: 3.3V
Memory: 4Mb SRAM
Mounting: SMD
Case: QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...125°C
Operating voltage: 3.3V
Memory: 4Mb SRAM
Mounting: SMD
Case: QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
кількість в упаковці: 800 шт
товар відсутній
IS64LF12832EC-7.5TQLA3 |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: in-tray; tube
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Case: QFP100
Type of integrated circuit: SRAM memory
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: in-tray; tube
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Case: QFP100
Type of integrated circuit: SRAM memory
кількість в упаковці: 72 шт
товар відсутній
IS64LF12836A-7.5B3LA3-TR |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
кількість в упаковці: 2000 шт
товар відсутній
IS61LF12836A-7.5TQLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
кількість в упаковці: 72 шт
товар відсутній
IS61LF12836A-7.5TQLI-TR |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
кількість в упаковці: 800 шт
товар відсутній
IS61LF12836EC-6.5TQLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 6.5ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 6.5ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
кількість в упаковці: 72 шт
товар відсутній
IS64LF12836EC-7.5B3LA3 |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
кількість в упаковці: 144 шт
товар відсутній
IS61LF12836EC-7.5TQLI-TR |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
кількість в упаковці: 800 шт
товар відсутній
IS64LF204818B-7.5TQLA3 |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 36Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx18bit
Access time: 7.5ns
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 36Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx18bit
Access time: 7.5ns
кількість в упаковці: 72 шт
товар відсутній
IS61LF204818B-7.5TQLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 36Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx18bit
Access time: 7.5ns
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 36Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx18bit
Access time: 7.5ns
кількість в упаковці: 72 шт
товар відсутній
IS61LF204836B-7.5TQLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
IS61LF25618A-7.5TQLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Case: QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Case: QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
кількість в упаковці: 72 шт
товар відсутній
IS61LF25618A-7.5TQLI-TR |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Case: QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Case: QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
кількість в упаковці: 800 шт
товар відсутній
IS64LF25636A-7.5B3LA3 |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; PBGA165
Operating temperature: -40...125°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: PBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; PBGA165
Operating temperature: -40...125°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: PBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
кількість в упаковці: 144 шт
товар відсутній
IS64LF25636A-7.5TQLA3 |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...125°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...125°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
кількість в упаковці: 72 шт
товар відсутній
IS64LF25636A-7.5TQLA3-TR |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...125°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...125°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
кількість в упаковці: 800 шт
товар відсутній
IS61LF25636A-7.5TQLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
кількість в упаковці: 72 шт
товар відсутній
IS61LF25636A-7.5TQLI-TR |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
кількість в упаковці: 800 шт
товар відсутній
IS61LF25636B-7.5TQLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
кількість в упаковці: 72 шт
товар відсутній
IS61LF25636B-7.5TQLI-TR |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Case: QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Case: QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
кількість в упаковці: 800 шт
товар відсутній
IS61LF51218A-7.5TQLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
IS61LF51218A-7.5TQLI-TR |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Operating voltage: 3.3V
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Operating voltage: 3.3V
кількість в упаковці: 800 шт
товар відсутній
IS61LF51218B-7.5TQLI |
Виробник: ISSI
LF51218B7.5TQLI Parallel SRAM memories - integ. circ.
LF51218B7.5TQLI Parallel SRAM memories - integ. circ.
товар відсутній
IS61LF51218B-7.5TQLI-TR |
Виробник: ISSI
LF51218B7.5TQLITR Parallel SRAM memories - integ. circ.
LF51218B7.5TQLITR Parallel SRAM memories - integ. circ.
товар відсутній
IS61LF51236B-6.5TQLI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 6.5ns
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 6.5ns
кількість в упаковці: 72 шт
товар відсутній