Технічний опис IS45S16160J-7TLA1 ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II, Mounting: SMD, Case: TSOP54 II, Operating temperature: -40...85°C, Kind of package: in-tray; tube, Kind of interface: parallel, Memory: 256Mb DRAM, Supply voltage: 3...3.6V DC, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory organisation: 4Mx16bitx4, Access time: 7ns, Clock frequency: 143MHz, кількість в упаковці: 1 шт.
Інші пропозиції IS45S16160J-7TLA1
| Фото | Назва | Виробник | Інформація |
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| IS45S16160J-7TLA1 | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Mounting: SMD Case: TSOP54 II Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz кількість в упаковці: 1 шт |
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%20Renders/54-TSOP.jpg "IS45S16160J-7TLA1") |
IS45S16160J-7TLA1 | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256M PARALLEL 54TSOP |
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IS45S16160J-7TLA1 | Виробник : ISSI |
DRAM Automotive (-40 to +85C), 256M, 3.3V, SDRAM, 16Mx16, 143MHz, 54 pin TSOP II RoHS |
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| IS45S16160J-7TLA1 | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Mounting: SMD Case: TSOP54 II Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz |
товар відсутній |