Технічний опис IS45S16160J-7BLA1 ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54, Mounting: SMD, Case: TFBGA54, Operating temperature: -40...85°C, Kind of package: in-tray; tube, Kind of interface: parallel, Memory: 256Mb DRAM, Supply voltage: 3...3.6V DC, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory organisation: 4Mx16bitx4, Access time: 7ns, Clock frequency: 143MHz, кількість в упаковці: 348 шт.
Інші пропозиції IS45S16160J-7BLA1
| Фото | Назва | Виробник | Інформація |
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| IS45S16160J-7BLA1 | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz кількість в упаковці: 348 шт |
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IS45S16160J-7BLA1 | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PAR 54TFBGA Packaging: Tray Package / Case: 54-TFBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 143 MHz Memory Format: DRAM Supplier Device Package: 54-TFBGA (8x8) Memory Interface: Parallel Access Time: 5.4 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
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IS45S16160J-7BLA1 | Виробник : ISSI |
DRAM Automotive (-40 to +85C), 256M, 3.3V, SDRAM, 16Mx16, 143MHz, 54 ball BGA (8mmx8mm) RoHS |
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| IS45S16160J-7BLA1 | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz |
товар відсутній |