Технічний опис IS45S16800F-6CTLA1 ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II, Kind of package: in-tray; tube, Kind of memory: SDRAM, Memory organisation: 2Mx16bitx4, Access time: 6ns, Clock frequency: 166MHz, Kind of interface: parallel, Memory: 128Mb DRAM, Mounting: SMD, Operating temperature: -40...85°C, Case: TSOP54 II, Supply voltage: 3...3.6V DC, Type of integrated circuit: DRAM memory, кількість в упаковці: 108 шт.
Інші пропозиції IS45S16800F-6CTLA1
| Фото | Назва | Виробник | Інформація |
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| IS45S16800F-6CTLA1 | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 108 шт |
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%20Renders/54-TSOP.jpg "IS45S16800F-6CTLA1") |
IS45S16800F-6CTLA1 | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SDRAM 128M 166MHZ 54TSOP |
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IS45S16800F-6CTLA1 | Виробник : ISSI |
DRAM Automotive (-40 to +85C), 128M, 3.3V, SDRAM, 8Mx16, 166Mhz, Cu 54 pin TSOP II (400 mil) RoHS |
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| IS45S16800F-6CTLA1 | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory |
товар відсутній |