Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136447) > Сторінка 50 з 2275

Обрати Сторінку:   [  << Попередня Сторінка ]  1 45 46 47 48 49 50 51 52 53 54 55 227 454 681 908 1135 1362 1589 1816 2043 2270 2275  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
IR2108SPBF IR2108SPBF Infineon Technologies ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
2+205.26 грн
10+ 177.52 грн
95+ 142.69 грн
285+ 125.73 грн
570+ 110.02 грн
1045+ 91.16 грн
Мінімальне замовлення: 2
IR2109SPBF IR2109SPBF Infineon Technologies ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
2+152.61 грн
10+ 132.04 грн
95+ 108.2 грн
Мінімальне замовлення: 2
IR2110SPBF IR2110SPBF Infineon Technologies Infineon-IR2110-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015355c80333167e&redirId=119801 description Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1483 шт:
термін постачання 21-31 дні (днів)
1+315.9 грн
10+ 273.05 грн
45+ 258.12 грн
135+ 209.93 грн
270+ 199.17 грн
540+ 178.71 грн
1035+ 148.25 грн
IR2111SPBF IR2111SPBF Infineon Technologies ir2111.pdf?fileId=5546d462533600a4015355c810e51682 description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 8.3V, 12.6V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 5898 шт:
термін постачання 21-31 дні (днів)
3+135.06 грн
10+ 116.83 грн
95+ 93.89 грн
285+ 82.74 грн
570+ 72.83 грн
Мінімальне замовлення: 3
IR2112SPBF IR2112SPBF Infineon Technologies ir2112.pdf?fileId=5546d462533600a4015355c81cb71685 description Description: IC GATE DRVR HI/LOW SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 2798 шт:
термін постачання 21-31 дні (днів)
2+212.13 грн
10+ 183.25 грн
45+ 173.2 грн
135+ 140.87 грн
270+ 133.64 грн
540+ 127.18 грн
Мінімальне замовлення: 2
IR2113SPBF IR2113SPBF Infineon Technologies Infineon-IR2110-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015355c80333167e&redirId=119801 description Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 7849 шт:
термін постачання 21-31 дні (днів)
2+241.88 грн
10+ 209.34 грн
45+ 197.9 грн
135+ 160.96 грн
270+ 152.71 грн
540+ 145.32 грн
Мінімальне замовлення: 2
IR2117SPBF IR2117SPBF Infineon Technologies ir2117.pdf?fileId=5546d462533600a4015355c84331168d description Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4598 шт:
термін постачання 21-31 дні (днів)
3+108.35 грн
10+ 93.91 грн
95+ 75.43 грн
285+ 66.46 грн
570+ 58.51 грн
Мінімальне замовлення: 3
IR2118SPBF IR2118SPBF Infineon Technologies ir2117.pdf?fileId=5546d462533600a4015355c84331168d description Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 7800 шт:
термін постачання 21-31 дні (днів)
2+154.13 грн
10+ 133.51 грн
95+ 107.29 грн
285+ 94.55 грн
570+ 82.73 грн
1045+ 68.55 грн
2565+ 62.77 грн
5035+ 60.45 грн
Мінімальне замовлення: 2
IR21271SPBF IR21271SPBF Infineon Technologies ir2127.pdf?fileId=5546d462533600a4015355c868861696 Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5265 шт:
термін постачання 21-31 дні (днів)
2+196.1 грн
10+ 170.03 грн
95+ 136.72 грн
285+ 120.47 грн
570+ 105.41 грн
1045+ 87.34 грн
2565+ 79.99 грн
5035+ 77.02 грн
Мінімальне замовлення: 2
IR2127SPBF IR2127SPBF Infineon Technologies ir2127.pdf?fileId=5546d462533600a4015355c868861696 Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 16142 шт:
термін постачання 21-31 дні (днів)
2+196.1 грн
10+ 170.03 грн
95+ 136.72 грн
285+ 120.47 грн
570+ 105.41 грн
1045+ 87.34 грн
2565+ 79.99 грн
5035+ 77.02 грн
Мінімальне замовлення: 2
IR2132SPBF IR2132SPBF Infineon Technologies ir2130.pdf?fileId=5546d462533600a4015355c8757d169a description Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1265 шт:
термін постачання 21-31 дні (днів)
1+416.62 грн
10+ 362.03 грн
25+ 345.23 грн
100+ 281.31 грн
250+ 278.24 грн
IR2135SPBF IR2135SPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IR2153SPBF IR2153SPBF Infineon Technologies IR2153_D_S_PbF_5-21-20.pdf description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 5424 шт:
термін постачання 21-31 дні (днів)
3+113.69 грн
10+ 98.68 грн
95+ 79.28 грн
285+ 69.86 грн
570+ 61.5 грн
Мінімальне замовлення: 3
IR2156SPBF IR2156SPBF Infineon Technologies ir2156.pdf?fileId=5546d462533600a4015355c8eb7116b8 description Description: IC BALLAST CNTRL 44KHZ 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 36kHz ~ 44kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 10.5V ~ 16.5V
Supplier Device Package: 14-SOIC
Dimming: No
Part Status: Discontinued at Digi-Key
Current - Supply: 10 mA
товар відсутній
IR2175SPBF IR2175SPBF Infineon Technologies IRSDS17958-1.pdf?t.download=true&u=5oefqw Description: IC CURRENT SENSE 0.5% 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Current Sense
Voltage - Input: 9.5V ~ 20V
Current - Output: 20mA
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 8-SOIC
на замовлення 1716 шт:
термін постачання 21-31 дні (днів)
2+286.9 грн
10+ 248.06 грн
95+ 203.25 грн
285+ 180.96 грн
570+ 162.37 грн
1045+ 136.94 грн
Мінімальне замовлення: 2
IR21814SPBF IR21814SPBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товар відсутній
IR2181SPBF IR2181SPBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)
2+214.42 грн
10+ 184.94 грн
95+ 151.52 грн
285+ 134.9 грн
570+ 128.38 грн
Мінімальне замовлення: 2
IR21834SPBF IR21834SPBF Infineon Technologies ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1976 шт:
термін постачання 21-31 дні (днів)
1+319.72 грн
10+ 276.87 грн
25+ 261.73 грн
100+ 212.87 грн
250+ 201.95 грн
500+ 181.21 грн
IR2183SPBF IR2183SPBF Infineon Technologies ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 3432 шт:
термін постачання 21-31 дні (днів)
2+283.09 грн
10+ 245.05 грн
95+ 200.77 грн
285+ 178.74 грн
570+ 160.39 грн
1045+ 135.27 грн
2565+ 126.4 грн
Мінімальне замовлення: 2
IR2233JPBF IR2233JPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 314 шт:
термін постачання 21-31 дні (днів)
1+532.6 грн
10+ 463.21 грн
27+ 441.63 грн
108+ 359.87 грн
270+ 355.94 грн
IR2301SPBF IR2301SPBF Infineon Technologies ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 5017 шт:
термін постачання 21-31 дні (днів)
2+184.66 грн
10+ 160.18 грн
95+ 128.76 грн
285+ 113.46 грн
570+ 99.28 грн
1045+ 82.26 грн
2565+ 75.33 грн
Мінімальне замовлення: 2
IR4427SPBF IR4427SPBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 1989 шт:
термін постачання 21-31 дні (днів)
2+179.32 грн
10+ 154.89 грн
95+ 124.5 грн
285+ 109.71 грн
570+ 95.99 грн
1045+ 79.54 грн
Мінімальне замовлення: 2
IRF1010ESTRLPBF IRF1010ESTRLPBF Infineon Technologies Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b Description: MOSFET N-CH 60V 84A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+64.77 грн
1600+ 52.92 грн
Мінімальне замовлення: 800
IRF1010NSTRLPBF IRF1010NSTRLPBF Infineon Technologies Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638 Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+72.31 грн
1600+ 59.08 грн
Мінімальне замовлення: 800
IRF1010NSTRRPBF IRF1010NSTRRPBF Infineon Technologies Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638 Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
товар відсутній
IRF1310NSTRLPBF IRF1310NSTRLPBF Infineon Technologies irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0 Description: MOSFET N-CH 100V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
800+81.25 грн
1600+ 66.38 грн
2400+ 63.06 грн
5600+ 56.96 грн
Мінімальне замовлення: 800
IRF1404STRLPBF IRF1404STRLPBF Infineon Technologies irf1404spbf.pdf?fileId=5546d462533600a4015355daf0f118b2 Description: MOSFET N-CH 40V 162A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+75.55 грн
Мінімальне замовлення: 800
IRF1405STRLPBF IRF1405STRLPBF Infineon Technologies IRF1405%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 131A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
800+104.09 грн
1600+ 85.05 грн
2400+ 80.79 грн
Мінімальне замовлення: 800
IRF2807STRLPBF IRF2807STRLPBF Infineon Technologies irf2807spbf.pdf?fileId=5546d462533600a4015355deafc518f4 Description: MOSFET N-CH 75V 82A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+75.13 грн
1600+ 61.39 грн
Мінімальне замовлення: 800
IRF3205STRRPBF IRF3205STRRPBF Infineon Technologies irf3205spbf.pdf?fileId=5546d462533600a4015355defac9190c Description: MOSFET N-CH 55V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
товар відсутній
IRF3205ZSTRRPBF IRF3205ZSTRRPBF Infineon Technologies irf3205zpbf.pdf?fileId=5546d462533600a4015355df030c190f Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
товар відсутній
IRF3415STRLPBF IRF3415STRLPBF Infineon Technologies irf3415spbf.pdf?fileId=5546d462533600a4015355df28f8191b Description: MOSFET N-CH 150V 43A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+90.71 грн
1600+ 74.12 грн
Мінімальне замовлення: 800
IRF3415STRRPBF IRF3415STRRPBF Infineon Technologies irf3415spbf.pdf?fileId=5546d462533600a4015355df28f8191b Description: MOSFET N-CH 150V 43A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товар відсутній
IRF3704STRLPBF IRF3704STRLPBF Infineon Technologies IRF3704%28S%2CL%29PbF.pdf Description: MOSFET N-CH 20V 77A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V
товар відсутній
IRF3710STRLPBF IRF3710STRLPBF Infineon Technologies irf3710spbf.pdf?fileId=5546d462533600a4015355df9dff1949 Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
800+74.04 грн
1600+ 60.5 грн
2400+ 57.47 грн
5600+ 51.91 грн
Мінімальне замовлення: 800
IRF3710STRRPBF IRF3710STRRPBF Infineon Technologies irf3710spbf.pdf?fileId=5546d462533600a4015355df9dff1949 Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
товар відсутній
IRF3711STRLPBF IRF3711STRLPBF Infineon Technologies irf3711pbf.pdf?fileId=5546d462533600a4015355dfbc571954 Description: MOSFET N-CH 20V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
товар відсутній
IRF3711STRRPBF IRF3711STRRPBF Infineon Technologies irf3711pbf.pdf?fileId=5546d462533600a4015355dfbc571954 Description: MOSFET N-CH 20V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
товар відсутній
IRF3717PBF IRF3717PBF Infineon Technologies IRF3717PbF.pdf description Description: MOSFET N-CH 20V 20A 8SO
товар відсутній
IRF5305STRLPBF IRF5305STRLPBF Infineon Technologies irf5305spbf.pdf?fileId=5546d462533600a4015355e378101995 description Description: MOSFET P-CH 55V 31A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 12800 шт:
термін постачання 21-31 дні (днів)
800+60.57 грн
1600+ 49.49 грн
2400+ 47.01 грн
5600+ 42.46 грн
Мінімальне замовлення: 800
IRF530NSTRLPBF IRF530NSTRLPBF Infineon Technologies irf530nspbf.pdf?fileId=5546d462533600a4015355e38eb4199c description Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
800+48.29 грн
1600+ 37.88 грн
2400+ 35.66 грн
Мінімальне замовлення: 800
IRF530NSTRRPBF IRF530NSTRRPBF Infineon Technologies irf530nspbf.pdf?fileId=5546d462533600a4015355e38eb4199c Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
товар відсутній
IRF540NSTRLPBF IRF540NSTRLPBF Infineon Technologies irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3 Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
на замовлення 9373 шт:
термін постачання 21-31 дні (днів)
800+57.58 грн
1600+ 45.17 грн
2400+ 42.52 грн
5600+ 38 грн
Мінімальне замовлення: 800
IRF540NSTRRPBF IRF540NSTRRPBF Infineon Technologies irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3 description Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
товар відсутній
IRF6215STRRPBF IRF6215STRRPBF Infineon Technologies irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2 Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
товар відсутній
IRF630NSTRLPBF IRF630NSTRLPBF Infineon Technologies irf630npbf.pdf?fileId=5546d462533600a4015355e7ae3819e6 Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
товар відсутній
IRF630NSTRRPBF IRF630NSTRRPBF Infineon Technologies irf630npbf.pdf?fileId=5546d462533600a4015355e7ae3819e6 Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
товар відсутній
IRF640NSTRLPBF IRF640NSTRLPBF Infineon Technologies irf640npbf.pdf?fileId=5546d462533600a4015355e7be9019ee Description: MOSFET N-CH 200V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 33600 шт:
термін постачання 21-31 дні (днів)
800+62.37 грн
1600+ 50.96 грн
2400+ 48.41 грн
5600+ 43.73 грн
Мінімальне замовлення: 800
IRF7101PBF IRF7101PBF Infineon Technologies irf7101pbf.pdf?fileId=5546d462533600a4015355f0e12b1ac2 description Description: MOSFET 2N-CH 20V 3.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товар відсутній
IRF7103PBF IRF7103PBF Infineon Technologies irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6 Description: MOSFET 2N-CH 50V 3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товар відсутній
IRF7104PBF IRF7104PBF Infineon Technologies irf7104pbf.pdf?fileId=5546d462533600a4015355f111081ace description Description: MOSFET 2P-CH 20V 2.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товар відсутній
IRF7105PBF IRF7105PBF Infineon Technologies irf7105pbf.pdf?fileId=5546d462533600a4015355f118ff1ad0 description Description: MOSFET N/P-CH 25V 3.5A/2.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товар відсутній
IRF7205PBF IRF7205PBF Infineon Technologies irf7205pbf.pdf?fileId=5546d462533600a4015355f15e771ae2 description Description: MOSFET P-CH 30V 4.6A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
товар відсутній
IRF7207PBF IRF7207PBF Infineon Technologies IR_PartNumberingSystem.pdf description Description: MOSFET P-CH 20V 5.4A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V
товар відсутній
IRF7233PBF IRF7233PBF Infineon Technologies IRF7233PbF.pdf Description: MOSFET P-CH 12V 9.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
товар відсутній
IRF7241PBF IRF7241PBF Infineon Technologies irf7241pbf.pdf?fileId=5546d462533600a4015355f1a5de1af4 Description: MOSFET P-CH 40V 6.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 6.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
товар відсутній
IRF7301PBF IRF7301PBF Infineon Technologies irf7301pbf.pdf?fileId=5546d462533600a4015355f1b66c1af8 description Description: MOSFET 2N-CH 20V 5.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товар відсутній
IRF7303PBF IRF7303PBF Infineon Technologies irf7303pbf.pdf?fileId=5546d462533600a4015355f1c70a1afc description Description: MOSFET 2N-CH 30V 4.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товар відсутній
IRF7316PBF IRF7316PBF Infineon Technologies irf7316pbf.pdf?fileId=5546d462533600a4015355f5994e1b34 description Description: MOSFET 2P-CH 30V 4.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товар відсутній
IRF7317PBF IRF7317PBF Infineon Technologies irf7317pbf.pdf?fileId=5546d462533600a4015355f5b8de1b3d description Description: MOSFET N/P-CH 20V 6.6A/5.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товар відсутній
IR2108SPBF ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
IR2108SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+205.26 грн
10+ 177.52 грн
95+ 142.69 грн
285+ 125.73 грн
570+ 110.02 грн
1045+ 91.16 грн
Мінімальне замовлення: 2
IR2109SPBF ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679
IR2109SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+152.61 грн
10+ 132.04 грн
95+ 108.2 грн
Мінімальне замовлення: 2
IR2110SPBF description Infineon-IR2110-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015355c80333167e&redirId=119801
IR2110SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1483 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+315.9 грн
10+ 273.05 грн
45+ 258.12 грн
135+ 209.93 грн
270+ 199.17 грн
540+ 178.71 грн
1035+ 148.25 грн
IR2111SPBF description ir2111.pdf?fileId=5546d462533600a4015355c810e51682
IR2111SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 8.3V, 12.6V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 5898 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+135.06 грн
10+ 116.83 грн
95+ 93.89 грн
285+ 82.74 грн
570+ 72.83 грн
Мінімальне замовлення: 3
IR2112SPBF description ir2112.pdf?fileId=5546d462533600a4015355c81cb71685
IR2112SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 2798 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+212.13 грн
10+ 183.25 грн
45+ 173.2 грн
135+ 140.87 грн
270+ 133.64 грн
540+ 127.18 грн
Мінімальне замовлення: 2
IR2113SPBF description Infineon-IR2110-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015355c80333167e&redirId=119801
IR2113SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 7849 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+241.88 грн
10+ 209.34 грн
45+ 197.9 грн
135+ 160.96 грн
270+ 152.71 грн
540+ 145.32 грн
Мінімальне замовлення: 2
IR2117SPBF description ir2117.pdf?fileId=5546d462533600a4015355c84331168d
IR2117SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4598 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+108.35 грн
10+ 93.91 грн
95+ 75.43 грн
285+ 66.46 грн
570+ 58.51 грн
Мінімальне замовлення: 3
IR2118SPBF description ir2117.pdf?fileId=5546d462533600a4015355c84331168d
IR2118SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 7800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+154.13 грн
10+ 133.51 грн
95+ 107.29 грн
285+ 94.55 грн
570+ 82.73 грн
1045+ 68.55 грн
2565+ 62.77 грн
5035+ 60.45 грн
Мінімальне замовлення: 2
IR21271SPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
IR21271SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5265 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+196.1 грн
10+ 170.03 грн
95+ 136.72 грн
285+ 120.47 грн
570+ 105.41 грн
1045+ 87.34 грн
2565+ 79.99 грн
5035+ 77.02 грн
Мінімальне замовлення: 2
IR2127SPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
IR2127SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 16142 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+196.1 грн
10+ 170.03 грн
95+ 136.72 грн
285+ 120.47 грн
570+ 105.41 грн
1045+ 87.34 грн
2565+ 79.99 грн
5035+ 77.02 грн
Мінімальне замовлення: 2
IR2132SPBF description ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
IR2132SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1265 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+416.62 грн
10+ 362.03 грн
25+ 345.23 грн
100+ 281.31 грн
250+ 278.24 грн
IR2135SPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2135SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IR2153SPBF description IR2153_D_S_PbF_5-21-20.pdf
IR2153SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 5424 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+113.69 грн
10+ 98.68 грн
95+ 79.28 грн
285+ 69.86 грн
570+ 61.5 грн
Мінімальне замовлення: 3
IR2156SPBF description ir2156.pdf?fileId=5546d462533600a4015355c8eb7116b8
IR2156SPBF
Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 44KHZ 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 36kHz ~ 44kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 10.5V ~ 16.5V
Supplier Device Package: 14-SOIC
Dimming: No
Part Status: Discontinued at Digi-Key
Current - Supply: 10 mA
товар відсутній
IR2175SPBF IRSDS17958-1.pdf?t.download=true&u=5oefqw
IR2175SPBF
Виробник: Infineon Technologies
Description: IC CURRENT SENSE 0.5% 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Current Sense
Voltage - Input: 9.5V ~ 20V
Current - Output: 20mA
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 8-SOIC
на замовлення 1716 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+286.9 грн
10+ 248.06 грн
95+ 203.25 грн
285+ 180.96 грн
570+ 162.37 грн
1045+ 136.94 грн
Мінімальне замовлення: 2
IR21814SPBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR21814SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товар відсутній
IR2181SPBF description ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR2181SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+214.42 грн
10+ 184.94 грн
95+ 151.52 грн
285+ 134.9 грн
570+ 128.38 грн
Мінімальне замовлення: 2
IR21834SPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR21834SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1976 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+319.72 грн
10+ 276.87 грн
25+ 261.73 грн
100+ 212.87 грн
250+ 201.95 грн
500+ 181.21 грн
IR2183SPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR2183SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 3432 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+283.09 грн
10+ 245.05 грн
95+ 200.77 грн
285+ 178.74 грн
570+ 160.39 грн
1045+ 135.27 грн
2565+ 126.4 грн
Мінімальне замовлення: 2
IR2233JPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2233JPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 314 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+532.6 грн
10+ 463.21 грн
27+ 441.63 грн
108+ 359.87 грн
270+ 355.94 грн
IR2301SPBF ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc
IR2301SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 5017 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+184.66 грн
10+ 160.18 грн
95+ 128.76 грн
285+ 113.46 грн
570+ 99.28 грн
1045+ 82.26 грн
2565+ 75.33 грн
Мінімальне замовлення: 2
IR4427SPBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4427SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 1989 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+179.32 грн
10+ 154.89 грн
95+ 124.5 грн
285+ 109.71 грн
570+ 95.99 грн
1045+ 79.54 грн
Мінімальне замовлення: 2
IRF1010ESTRLPBF Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b
IRF1010ESTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 84A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+64.77 грн
1600+ 52.92 грн
Мінімальне замовлення: 800
IRF1010NSTRLPBF Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638
IRF1010NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+72.31 грн
1600+ 59.08 грн
Мінімальне замовлення: 800
IRF1010NSTRRPBF Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638
IRF1010NSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
товар відсутній
IRF1310NSTRLPBF irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0
IRF1310NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+81.25 грн
1600+ 66.38 грн
2400+ 63.06 грн
5600+ 56.96 грн
Мінімальне замовлення: 800
IRF1404STRLPBF irf1404spbf.pdf?fileId=5546d462533600a4015355daf0f118b2
IRF1404STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 162A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+75.55 грн
Мінімальне замовлення: 800
IRF1405STRLPBF IRF1405%28S%2CL%29PbF.pdf
IRF1405STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 131A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+104.09 грн
1600+ 85.05 грн
2400+ 80.79 грн
Мінімальне замовлення: 800
IRF2807STRLPBF irf2807spbf.pdf?fileId=5546d462533600a4015355deafc518f4
IRF2807STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 82A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+75.13 грн
1600+ 61.39 грн
Мінімальне замовлення: 800
IRF3205STRRPBF irf3205spbf.pdf?fileId=5546d462533600a4015355defac9190c
IRF3205STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
товар відсутній
IRF3205ZSTRRPBF irf3205zpbf.pdf?fileId=5546d462533600a4015355df030c190f
IRF3205ZSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
товар відсутній
IRF3415STRLPBF irf3415spbf.pdf?fileId=5546d462533600a4015355df28f8191b
IRF3415STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 43A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+90.71 грн
1600+ 74.12 грн
Мінімальне замовлення: 800
IRF3415STRRPBF irf3415spbf.pdf?fileId=5546d462533600a4015355df28f8191b
IRF3415STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 43A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товар відсутній
IRF3704STRLPBF IRF3704%28S%2CL%29PbF.pdf
IRF3704STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 77A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V
товар відсутній
IRF3710STRLPBF irf3710spbf.pdf?fileId=5546d462533600a4015355df9dff1949
IRF3710STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+74.04 грн
1600+ 60.5 грн
2400+ 57.47 грн
5600+ 51.91 грн
Мінімальне замовлення: 800
IRF3710STRRPBF irf3710spbf.pdf?fileId=5546d462533600a4015355df9dff1949
IRF3710STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
товар відсутній
IRF3711STRLPBF irf3711pbf.pdf?fileId=5546d462533600a4015355dfbc571954
IRF3711STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
товар відсутній
IRF3711STRRPBF irf3711pbf.pdf?fileId=5546d462533600a4015355dfbc571954
IRF3711STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
товар відсутній
IRF3717PBF description IRF3717PbF.pdf
IRF3717PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 20A 8SO
товар відсутній
IRF5305STRLPBF description irf5305spbf.pdf?fileId=5546d462533600a4015355e378101995
IRF5305STRLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 12800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+60.57 грн
1600+ 49.49 грн
2400+ 47.01 грн
5600+ 42.46 грн
Мінімальне замовлення: 800
IRF530NSTRLPBF description irf530nspbf.pdf?fileId=5546d462533600a4015355e38eb4199c
IRF530NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+48.29 грн
1600+ 37.88 грн
2400+ 35.66 грн
Мінімальне замовлення: 800
IRF530NSTRRPBF irf530nspbf.pdf?fileId=5546d462533600a4015355e38eb4199c
IRF530NSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
товар відсутній
IRF540NSTRLPBF irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3
IRF540NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
на замовлення 9373 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+57.58 грн
1600+ 45.17 грн
2400+ 42.52 грн
5600+ 38 грн
Мінімальне замовлення: 800
IRF540NSTRRPBF description irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3
IRF540NSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
товар відсутній
IRF6215STRRPBF irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2
IRF6215STRRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
товар відсутній
IRF630NSTRLPBF irf630npbf.pdf?fileId=5546d462533600a4015355e7ae3819e6
IRF630NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
товар відсутній
IRF630NSTRRPBF irf630npbf.pdf?fileId=5546d462533600a4015355e7ae3819e6
IRF630NSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
товар відсутній
IRF640NSTRLPBF irf640npbf.pdf?fileId=5546d462533600a4015355e7be9019ee
IRF640NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 33600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+62.37 грн
1600+ 50.96 грн
2400+ 48.41 грн
5600+ 43.73 грн
Мінімальне замовлення: 800
IRF7101PBF description irf7101pbf.pdf?fileId=5546d462533600a4015355f0e12b1ac2
IRF7101PBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 3.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товар відсутній
IRF7103PBF irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6
IRF7103PBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 50V 3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товар відсутній
IRF7104PBF description irf7104pbf.pdf?fileId=5546d462533600a4015355f111081ace
IRF7104PBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 2.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товар відсутній
IRF7105PBF description irf7105pbf.pdf?fileId=5546d462533600a4015355f118ff1ad0
IRF7105PBF
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 25V 3.5A/2.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товар відсутній
IRF7205PBF description irf7205pbf.pdf?fileId=5546d462533600a4015355f15e771ae2
IRF7205PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 4.6A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
товар відсутній
IRF7207PBF description IR_PartNumberingSystem.pdf
IRF7207PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 5.4A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V
товар відсутній
IRF7233PBF IRF7233PbF.pdf
IRF7233PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 12V 9.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
товар відсутній
IRF7241PBF irf7241pbf.pdf?fileId=5546d462533600a4015355f1a5de1af4
IRF7241PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 6.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 6.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
товар відсутній
IRF7301PBF description irf7301pbf.pdf?fileId=5546d462533600a4015355f1b66c1af8
IRF7301PBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 5.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товар відсутній
IRF7303PBF description irf7303pbf.pdf?fileId=5546d462533600a4015355f1c70a1afc
IRF7303PBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 4.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товар відсутній
IRF7316PBF description irf7316pbf.pdf?fileId=5546d462533600a4015355f5994e1b34
IRF7316PBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 4.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товар відсутній
IRF7317PBF description irf7317pbf.pdf?fileId=5546d462533600a4015355f5b8de1b3d
IRF7317PBF
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 6.6A/5.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 45 46 47 48 49 50 51 52 53 54 55 227 454 681 908 1135 1362 1589 1816 2043 2270 2275  [ Наступна Сторінка >> ]