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IRLR2905PBF IRLR2905PBF Infineon Technologies irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679 Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
IRLR2905TRLPBF IRLR2905TRLPBF Infineon Technologies irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679 Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
IRLR3103PBF IRLR3103PBF Infineon Technologies irlr3103pbf.pdf?fileId=5546d462533600a40153566ce4382684 description Description: MOSFET N-CH 30V 55A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товар відсутній
IRLR3103TRLPBF IRLR3103TRLPBF Infineon Technologies irlr3103pbf.pdf?fileId=5546d462533600a40153566ce4382684 Description: MOSFET N-CH 30V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товар відсутній
IRLR3103TRRPBF IRLR3103TRRPBF Infineon Technologies irlr3103pbf.pdf?fileId=5546d462533600a40153566ce4382684 Description: MOSFET N-CH 30V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товар відсутній
IRLR3303PBF IRLR3303PBF Infineon Technologies IRLR,U3303PbF.pdf Description: MOSFET N-CH 30V 35A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 21A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
товар відсутній
IRLR3303TRLPBF IRLR3303TRLPBF Infineon Technologies IRLR,U3303PbF.pdf Description: MOSFET N-CH 30V 35A DPAK
товар відсутній
IRLR3410PBF IRLR3410PBF Infineon Technologies irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695 description Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товар відсутній
IRLR3410TRLPBF IRLR3410TRLPBF Infineon Technologies irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695 Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+28.35 грн
Мінімальне замовлення: 3000
IRLR3714PBF IRLR3714PBF Infineon Technologies IRL%28R%2CU%293714PbF.pdf Description: MOSFET N-CH 20V 36A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
товар відсутній
IRLR3714TRLPBF IRLR3714TRLPBF Infineon Technologies IRL(R,U)3714PbF.pdf Description: MOSFET N-CH 20V 36A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
товар відсутній
IRLR3715TRLPBF IRLR3715TRLPBF Infineon Technologies irlr3715pbf.pdf Description: MOSFET N-CH 20V 54A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
товар відсутній
IRLR3715ZPBF IRLR3715ZPBF Infineon Technologies irlr3715zpbf.pdf?fileId=5546d462533600a40153566d596626ad description Description: MOSFET N-CH 20V 49A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
товар відсутній
IRLR3715ZTRLPBF IRLR3715ZTRLPBF Infineon Technologies irlr3715zpbf.pdf?fileId=5546d462533600a40153566d596626ad Description: MOSFET N-CH 20V 49A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
товар відсутній
IRLR7821PBF IRLR7821PBF Infineon Technologies IRLR7821PbF%2CIRLU7821PbF.pdf Description: MOSFET N-CH 30V 65A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
товар відсутній
IRLR7833TRRPBF IRLR7833TRRPBF Infineon Technologies irlr7833pbf.pdf?fileId=5546d462533600a40153566dd6b626d3 Description: MOSFET N-CH 30V 140A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V
товар відсутній
IRLR7843PBF IRLR7843PBF Infineon Technologies irlr7843pbf.pdf?fileId=5546d462533600a40153566de53526d8 description Description: MOSFET N-CH 30V 161A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
товар відсутній
IRLR8103VPBF IRLR8103VPBF Infineon Technologies irlr8103vpbf.pdf?fileId=5546d462533600a40153566df59526dd Description: MOSFET N-CH 30V 91A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
товар відсутній
IRLR8103VTRRPBF IRLR8103VTRRPBF Infineon Technologies irlr8103vpbf.pdf?fileId=5546d462533600a40153566df59526dd Description: MOSFET N-CH 30V 91A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
товар відсутній
IRLR8113PBF IRLR8113PBF Infineon Technologies IRLR8113PbF%2C%20IRLU8113PbF.pdf Description: MOSFET N-CH 30V 94A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 15 V
товар відсутній
IRLR8503PBF IRLR8503PBF Infineon Technologies irlr8503pbf.pdf Description: MOSFET N-CH 30V 44A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
товар відсутній
IRLR8503TRRPBF IRLR8503TRRPBF Infineon Technologies irlr8503pbf.pdf Description: MOSFET N-CH 30V 44A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
товар відсутній
IRLZ24NSTRLPBF IRLZ24NSTRLPBF Infineon Technologies irlz24nspbf.pdf Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
товар відсутній
IRLZ44NSTRLPBF IRLZ44NSTRLPBF Infineon Technologies irlz44nspbf.pdf?fileId=5546d462533600a40153567221272727 Description: MOSFET N-CH 55V 47A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товар відсутній
IRLZ44NSTRRPBF IRLZ44NSTRRPBF Infineon Technologies irlz44nspbf.pdf?fileId=5546d462533600a40153567221272727 Description: MOSFET N-CH 55V 47A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товар відсутній
IRU3037CSPBF IRU3037CSPBF Infineon Technologies IRU3037%28A%20%2CPbF%29.pdf description Description: IC REG CTRLR BUCK/BOOST 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck, Boost
Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Soft Start
Output Phases: 1
Duty Cycle (Max): 90%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
товар відсутній
IRU3137CSTRPBF IRU3137CSTRPBF Infineon Technologies iru3137.pdf Description: IC REG CTRLR BUCK 8SOIC
товар відсутній
SI4410DYPBF SI4410DYPBF Infineon Technologies si4410dypbf.pdf?fileId=5546d462533600a4015356846a03297f Description: MOSFET N-CH 30V 10A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
товар відсутній
SI4420DYPBF SI4420DYPBF Infineon Technologies si4420dypbf.pdf?fileId=5546d462533600a401535684734c2981 Description: MOSFET N-CH 30V 12.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
товар відсутній
SI4435DYPBF SI4435DYPBF Infineon Technologies si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983 Description: MOSFET P-CH 30V 8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
товар відсутній
IRF6648TR1 IRF6648TR1 Infineon Technologies IRF6601_SCHEM-v2.jpg Description: MOSFET N-CH 60V 86A DIRECTFET MN
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 25 V
товар відсутній
IR3094MTRPBF IR3094MTRPBF Infineon Technologies IR3094PBF.pdf Description: IC REG CTRLR BUCK 48MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 8V ~ 16V
Supplier Device Package: 48-MLPQ (7x7)
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control, Power Good, Soft Start
Output Phases: 3
Duty Cycle (Max): 100%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 3
товар відсутній
IR3094MPBF Infineon Technologies IR3094PBF.pdf Description: IC REG CTRLR BUCK 48MLPQ
Packaging: Bag
Package / Case: 48-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 8V ~ 16V
Supplier Device Package: 48-MLPQ (7x7)
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control, Power Good, Soft Start
Output Phases: 3
Duty Cycle (Max): 100%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 3
товар відсутній
IRFB3077PBF IRFB3077PBF Infineon Technologies irfb3077pbf.pdf?fileId=5546d462533600a4015356153f0d1def description Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
на замовлення 1451 шт:
термін постачання 21-31 дні (днів)
1+312.08 грн
50+ 238.32 грн
100+ 204.28 грн
500+ 170.41 грн
1000+ 145.91 грн
ADM6996LX-AA-T-1 ADM6996LX-AA-T-1 Infineon Technologies ADM6996L.pdf Description: IC SW TX/FX CTRLR/PHY/MEM 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: Parallel
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 2.8V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
товар відсутній
BCR401RE6327HTSA1 BCR401RE6327HTSA1 Infineon Technologies Infineon-BCR401R-DS-v01_01-EN.pdf?fileId=5546d46262b31d2e0162f27265483c8b Description: IC CURRENT SOURCE SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 18V
Current - Output: 60mA
Supplier Device Package: PG-SOT-143R-3D
Part Status: Not For New Designs
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
3000+10.21 грн
6000+ 9.2 грн
15000+ 8.57 грн
30000+ 7.62 грн
Мінімальне замовлення: 3000
BCR402RE6327HTSA1 BCR402RE6327HTSA1 Infineon Technologies bcr402r.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407bc2b0a0189 Description: IC LED DRVR LIN 60MA SOT143R-4
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT-143R-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+10.21 грн
6000+ 9.2 грн
Мінімальне замовлення: 3000
BCR402UE6327HTSA1 BCR402UE6327HTSA1 Infineon Technologies Infineon-BCR402-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524e8f40619 Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
3000+11.01 грн
6000+ 9.91 грн
15000+ 9.23 грн
30000+ 8.21 грн
Мінімальне замовлення: 3000
BCR405UE6327HTSA1 BCR405UE6327HTSA1 Infineon Technologies BCR405U.pdf Description: IC LED DRIVER LINEAR 50MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 50mA
Internal Switch(s): No
Supplier Device Package: PG-SC74-6
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+10.5 грн
6000+ 9.5 грн
Мінімальне замовлення: 3000
BFP640FE6327 BFP640FE6327 Infineon Technologies BFP640F.pdf Description: RF TRANS NPN 4.5V 40GHZ 4TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 23dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
товар відсутній
BGA612E6327HTSA1 BGA612E6327HTSA1 Infineon Technologies BGA612.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418eaa5b1639 Description: IC AMP MMIC 80MA 2.8V SOT343
товар відсутній
BGA614E6327HTSA1 BGA614E6327HTSA1 Infineon Technologies bga614.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418ffd35163a Description: IC AMP CELLULAR 2.4GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.4GHz
RF Type: Cellular, GSM, PCS, CDMA, UMTS
Voltage - Supply: 3V
Gain: 17.5dB
Current - Supply: 80mA
Noise Figure: 2.1dB
P1dB: 12dBm
Test Frequency: 2GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
товар відсутній
BGA616E6327HTSA1 BGA616E6327HTSA1 Infineon Technologies BGA616_Rev2011.pdf Description: IC AMP CELL 0HZ-2.7GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.7GHz
RF Type: Cellular, GSM, PCS, CDMA, UMTS
Voltage - Supply: 4.5V
Gain: 17.5dB
Current - Supply: 80mA
Noise Figure: 2.5dB
P1dB: 18dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Obsolete
товар відсутній
BSC022N03SG BSC022N03SG Infineon Technologies BSC022N03S.pdf Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товар відсутній
BSC032N03SG BSC032N03SG Infineon Technologies BSC032N03S_G.pdf Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 15 V
товар відсутній
BSC079N03SG BSC079N03SG Infineon Technologies BSC079N03S_G.pdf Description: MOSFET N-CH 30V 14.6A/40A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 40A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
товар відсутній
IFX1117GSV IFX1117GSV Infineon Technologies IFX1117.pdf Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
товар відсутній
IPB100N06S3L-03 IPB100N06S3L-03 Infineon Technologies IPB%28I%2CP%29100N06S3L-03.pdf Description: MOSFET N-CH 55V 100A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 230µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26240 pF @ 25 V
товар відсутній
IPDH4N03LAG IPDH4N03LAG Infineon Technologies IP%28D%2CS%29H4N03LA_G.pdf Description: MOSFET N-CH 25V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
товар відсутній
IPD5N03LAG IPD5N03LAG Infineon Technologies IPD,IPSH5N03LAG_Rev1.0.pdf Description: MOSFET N-CH 25V 50A TO252-3-11
товар відсутній
IPDH6N03LAG IPDH6N03LAG Infineon Technologies IPDH6N03LAG_Rev1.4.pdf Description: MOSFET N-CH 25V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 15 V
товар відсутній
IPP60R099CPXKSA1 IPP60R099CPXKSA1 Infineon Technologies IPP60R099CP_rev2.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e3e6b4987 Description: MOSFET N-CH 650V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
на замовлення 1038 шт:
термін постачання 21-31 дні (днів)
1+574.57 грн
50+ 442.03 грн
100+ 395.49 грн
500+ 327.49 грн
1000+ 294.74 грн
TLE4906LHALA1 TLE4906LHALA1 Infineon Technologies Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642 Description: MAGNETIC SWITCH UNIPOLAR SSO-3-2
Packaging: Tape & Box (TB)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
2000+45.42 грн
4000+ 42.41 грн
6000+ 39.76 грн
Мінімальне замовлення: 2000
TLE4990HAXA1 TLE4990HAXA1 Infineon Technologies TLE4990(-E6782)_V2.4.pdf Description: IC HALL EFFECT UNI/BIPOL PGSSO41
товар відсутній
BCR401RE6327HTSA1 BCR401RE6327HTSA1 Infineon Technologies Infineon-BCR401R-DS-v01_01-EN.pdf?fileId=5546d46262b31d2e0162f27265483c8b Description: IC CURRENT SOURCE SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 18V
Current - Output: 60mA
Supplier Device Package: PG-SOT-143R-3D
Part Status: Not For New Designs
на замовлення 39970 шт:
термін постачання 21-31 дні (днів)
11+29 грн
13+ 23.81 грн
25+ 22.19 грн
100+ 16.67 грн
250+ 15.48 грн
500+ 13.1 грн
1000+ 9.96 грн
Мінімальне замовлення: 11
BCR402RE6327HTSA1 BCR402RE6327HTSA1 Infineon Technologies bcr402r.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407bc2b0a0189 Description: IC LED DRVR LIN 60MA SOT143R-4
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT-143R-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7576 шт:
термін постачання 21-31 дні (днів)
11+29 грн
13+ 23.81 грн
25+ 22.19 грн
100+ 16.67 грн
250+ 15.48 грн
500+ 13.1 грн
1000+ 9.96 грн
Мінімальне замовлення: 11
BCR402UE6327HTSA1 BCR402UE6327HTSA1 Infineon Technologies Infineon-BCR402-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524e8f40619 Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 60743 шт:
термін постачання 21-31 дні (днів)
10+31.28 грн
12+ 25.64 грн
25+ 23.92 грн
100+ 17.96 грн
250+ 16.68 грн
500+ 14.12 грн
1000+ 10.73 грн
Мінімальне замовлення: 10
BCR405UE6327HTSA1 BCR405UE6327HTSA1 Infineon Technologies BCR405U.pdf Description: IC LED DRIVER LINEAR 50MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 50mA
Internal Switch(s): No
Supplier Device Package: PG-SC74-6
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10291 шт:
термін постачання 21-31 дні (днів)
9+37.39 грн
11+ 28.8 грн
25+ 26.36 грн
100+ 18.4 грн
250+ 16.68 грн
500+ 13.8 грн
1000+ 10.18 грн
Мінімальне замовлення: 9
BFP640FE6327 BFP640FE6327 Infineon Technologies BFP640F.pdf Description: RF TRANS NPN 4.5V 40GHZ 4TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 23dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
товар відсутній
BGA612E6327HTSA1 BGA612E6327HTSA1 Infineon Technologies BGA612.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418eaa5b1639 Description: IC AMP MMIC 80MA 2.8V SOT343
товар відсутній
IRLR2905PBF irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679
IRLR2905PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
IRLR2905TRLPBF irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679
IRLR2905TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
IRLR3103PBF description irlr3103pbf.pdf?fileId=5546d462533600a40153566ce4382684
IRLR3103PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 55A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товар відсутній
IRLR3103TRLPBF irlr3103pbf.pdf?fileId=5546d462533600a40153566ce4382684
IRLR3103TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товар відсутній
IRLR3103TRRPBF irlr3103pbf.pdf?fileId=5546d462533600a40153566ce4382684
IRLR3103TRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товар відсутній
IRLR3303PBF IRLR,U3303PbF.pdf
IRLR3303PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 35A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 21A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
товар відсутній
IRLR3303TRLPBF IRLR,U3303PbF.pdf
IRLR3303TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 35A DPAK
товар відсутній
IRLR3410PBF description irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695
IRLR3410PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товар відсутній
IRLR3410TRLPBF irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695
IRLR3410TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+28.35 грн
Мінімальне замовлення: 3000
IRLR3714PBF IRL%28R%2CU%293714PbF.pdf
IRLR3714PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
товар відсутній
IRLR3714TRLPBF IRL(R,U)3714PbF.pdf
IRLR3714TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
товар відсутній
IRLR3715TRLPBF irlr3715pbf.pdf
IRLR3715TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 54A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
товар відсутній
IRLR3715ZPBF description irlr3715zpbf.pdf?fileId=5546d462533600a40153566d596626ad
IRLR3715ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 49A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
товар відсутній
IRLR3715ZTRLPBF irlr3715zpbf.pdf?fileId=5546d462533600a40153566d596626ad
IRLR3715ZTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 49A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
товар відсутній
IRLR7821PBF IRLR7821PbF%2CIRLU7821PbF.pdf
IRLR7821PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 65A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
товар відсутній
IRLR7833TRRPBF irlr7833pbf.pdf?fileId=5546d462533600a40153566dd6b626d3
IRLR7833TRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 140A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V
товар відсутній
IRLR7843PBF description irlr7843pbf.pdf?fileId=5546d462533600a40153566de53526d8
IRLR7843PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 161A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
товар відсутній
IRLR8103VPBF irlr8103vpbf.pdf?fileId=5546d462533600a40153566df59526dd
IRLR8103VPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 91A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
товар відсутній
IRLR8103VTRRPBF irlr8103vpbf.pdf?fileId=5546d462533600a40153566df59526dd
IRLR8103VTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 91A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
товар відсутній
IRLR8113PBF IRLR8113PbF%2C%20IRLU8113PbF.pdf
IRLR8113PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 94A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 15 V
товар відсутній
IRLR8503PBF irlr8503pbf.pdf
IRLR8503PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 44A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
товар відсутній
IRLR8503TRRPBF irlr8503pbf.pdf
IRLR8503TRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 44A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
товар відсутній
IRLZ24NSTRLPBF irlz24nspbf.pdf
IRLZ24NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
товар відсутній
IRLZ44NSTRLPBF irlz44nspbf.pdf?fileId=5546d462533600a40153567221272727
IRLZ44NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 47A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товар відсутній
IRLZ44NSTRRPBF irlz44nspbf.pdf?fileId=5546d462533600a40153567221272727
IRLZ44NSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 47A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товар відсутній
IRU3037CSPBF description IRU3037%28A%20%2CPbF%29.pdf
IRU3037CSPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK/BOOST 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck, Boost
Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Soft Start
Output Phases: 1
Duty Cycle (Max): 90%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
товар відсутній
IRU3137CSTRPBF iru3137.pdf
IRU3137CSTRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 8SOIC
товар відсутній
SI4410DYPBF si4410dypbf.pdf?fileId=5546d462533600a4015356846a03297f
SI4410DYPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 10A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
товар відсутній
SI4420DYPBF si4420dypbf.pdf?fileId=5546d462533600a401535684734c2981
SI4420DYPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
товар відсутній
SI4435DYPBF si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983
SI4435DYPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
товар відсутній
IRF6648TR1 IRF6601_SCHEM-v2.jpg
IRF6648TR1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 86A DIRECTFET MN
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 25 V
товар відсутній
IR3094MTRPBF IR3094PBF.pdf
IR3094MTRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 48MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 8V ~ 16V
Supplier Device Package: 48-MLPQ (7x7)
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control, Power Good, Soft Start
Output Phases: 3
Duty Cycle (Max): 100%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 3
товар відсутній
IR3094MPBF IR3094PBF.pdf
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 48MLPQ
Packaging: Bag
Package / Case: 48-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 8V ~ 16V
Supplier Device Package: 48-MLPQ (7x7)
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control, Power Good, Soft Start
Output Phases: 3
Duty Cycle (Max): 100%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 3
товар відсутній
IRFB3077PBF description irfb3077pbf.pdf?fileId=5546d462533600a4015356153f0d1def
IRFB3077PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
на замовлення 1451 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+312.08 грн
50+ 238.32 грн
100+ 204.28 грн
500+ 170.41 грн
1000+ 145.91 грн
ADM6996LX-AA-T-1 ADM6996L.pdf
ADM6996LX-AA-T-1
Виробник: Infineon Technologies
Description: IC SW TX/FX CTRLR/PHY/MEM 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: Parallel
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 2.8V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
товар відсутній
BCR401RE6327HTSA1 Infineon-BCR401R-DS-v01_01-EN.pdf?fileId=5546d46262b31d2e0162f27265483c8b
BCR401RE6327HTSA1
Виробник: Infineon Technologies
Description: IC CURRENT SOURCE SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 18V
Current - Output: 60mA
Supplier Device Package: PG-SOT-143R-3D
Part Status: Not For New Designs
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+10.21 грн
6000+ 9.2 грн
15000+ 8.57 грн
30000+ 7.62 грн
Мінімальне замовлення: 3000
BCR402RE6327HTSA1 bcr402r.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407bc2b0a0189
BCR402RE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR LIN 60MA SOT143R-4
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT-143R-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+10.21 грн
6000+ 9.2 грн
Мінімальне замовлення: 3000
BCR402UE6327HTSA1 Infineon-BCR402-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524e8f40619
BCR402UE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+11.01 грн
6000+ 9.91 грн
15000+ 9.23 грн
30000+ 8.21 грн
Мінімальне замовлення: 3000
BCR405UE6327HTSA1 BCR405U.pdf
BCR405UE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRIVER LINEAR 50MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 50mA
Internal Switch(s): No
Supplier Device Package: PG-SC74-6
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+10.5 грн
6000+ 9.5 грн
Мінімальне замовлення: 3000
BFP640FE6327 BFP640F.pdf
BFP640FE6327
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.5V 40GHZ 4TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 23dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
товар відсутній
BGA612E6327HTSA1 BGA612.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418eaa5b1639
BGA612E6327HTSA1
Виробник: Infineon Technologies
Description: IC AMP MMIC 80MA 2.8V SOT343
товар відсутній
BGA614E6327HTSA1 bga614.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418ffd35163a
BGA614E6327HTSA1
Виробник: Infineon Technologies
Description: IC AMP CELLULAR 2.4GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.4GHz
RF Type: Cellular, GSM, PCS, CDMA, UMTS
Voltage - Supply: 3V
Gain: 17.5dB
Current - Supply: 80mA
Noise Figure: 2.1dB
P1dB: 12dBm
Test Frequency: 2GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
товар відсутній
BGA616E6327HTSA1 BGA616_Rev2011.pdf
BGA616E6327HTSA1
Виробник: Infineon Technologies
Description: IC AMP CELL 0HZ-2.7GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.7GHz
RF Type: Cellular, GSM, PCS, CDMA, UMTS
Voltage - Supply: 4.5V
Gain: 17.5dB
Current - Supply: 80mA
Noise Figure: 2.5dB
P1dB: 18dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Obsolete
товар відсутній
BSC022N03SG BSC022N03S.pdf
BSC022N03SG
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товар відсутній
BSC032N03SG BSC032N03S_G.pdf
BSC032N03SG
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 15 V
товар відсутній
BSC079N03SG BSC079N03S_G.pdf
BSC079N03SG
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14.6A/40A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 40A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
товар відсутній
IFX1117GSV IFX1117.pdf
IFX1117GSV
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
товар відсутній
IPB100N06S3L-03 IPB%28I%2CP%29100N06S3L-03.pdf
IPB100N06S3L-03
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 230µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26240 pF @ 25 V
товар відсутній
IPDH4N03LAG IP%28D%2CS%29H4N03LA_G.pdf
IPDH4N03LAG
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
товар відсутній
IPD5N03LAG IPD,IPSH5N03LAG_Rev1.0.pdf
IPD5N03LAG
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO252-3-11
товар відсутній
IPDH6N03LAG IPDH6N03LAG_Rev1.4.pdf
IPDH6N03LAG
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 15 V
товар відсутній
IPP60R099CPXKSA1 IPP60R099CP_rev2.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e3e6b4987
IPP60R099CPXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
на замовлення 1038 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+574.57 грн
50+ 442.03 грн
100+ 395.49 грн
500+ 327.49 грн
1000+ 294.74 грн
TLE4906LHALA1 Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642
TLE4906LHALA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SSO-3-2
Packaging: Tape & Box (TB)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+45.42 грн
4000+ 42.41 грн
6000+ 39.76 грн
Мінімальне замовлення: 2000
TLE4990HAXA1 TLE4990(-E6782)_V2.4.pdf
TLE4990HAXA1
Виробник: Infineon Technologies
Description: IC HALL EFFECT UNI/BIPOL PGSSO41
товар відсутній
BCR401RE6327HTSA1 Infineon-BCR401R-DS-v01_01-EN.pdf?fileId=5546d46262b31d2e0162f27265483c8b
BCR401RE6327HTSA1
Виробник: Infineon Technologies
Description: IC CURRENT SOURCE SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 18V
Current - Output: 60mA
Supplier Device Package: PG-SOT-143R-3D
Part Status: Not For New Designs
на замовлення 39970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+29 грн
13+ 23.81 грн
25+ 22.19 грн
100+ 16.67 грн
250+ 15.48 грн
500+ 13.1 грн
1000+ 9.96 грн
Мінімальне замовлення: 11
BCR402RE6327HTSA1 bcr402r.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407bc2b0a0189
BCR402RE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR LIN 60MA SOT143R-4
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT-143R-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7576 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+29 грн
13+ 23.81 грн
25+ 22.19 грн
100+ 16.67 грн
250+ 15.48 грн
500+ 13.1 грн
1000+ 9.96 грн
Мінімальне замовлення: 11
BCR402UE6327HTSA1 Infineon-BCR402-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524e8f40619
BCR402UE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 60743 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.28 грн
12+ 25.64 грн
25+ 23.92 грн
100+ 17.96 грн
250+ 16.68 грн
500+ 14.12 грн
1000+ 10.73 грн
Мінімальне замовлення: 10
BCR405UE6327HTSA1 BCR405U.pdf
BCR405UE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRIVER LINEAR 50MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 50mA
Internal Switch(s): No
Supplier Device Package: PG-SC74-6
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10291 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+37.39 грн
11+ 28.8 грн
25+ 26.36 грн
100+ 18.4 грн
250+ 16.68 грн
500+ 13.8 грн
1000+ 10.18 грн
Мінімальне замовлення: 9
BFP640FE6327 BFP640F.pdf
BFP640FE6327
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.5V 40GHZ 4TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 23dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
товар відсутній
BGA612E6327HTSA1 BGA612.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418eaa5b1639
BGA612E6327HTSA1
Виробник: Infineon Technologies
Description: IC AMP MMIC 80MA 2.8V SOT343
товар відсутній
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