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BC857BE6433HTMA1 BC857BE6433HTMA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 220000 шт:
термін постачання 21-31 дні (днів)
7818+2.82 грн
Мінімальне замовлення: 7818
TLE4242G TLE4242G Infineon Technologies Infineon-TLE4242G-DS-v01_10-EN.pdf?fileId=5546d46265f064ff01660bd83f556ecc&redirId=115273 description Description: IC LED DRV LIN PWM 500MA TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Automotive
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: PG-TO263-7-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42 V
Part Status: Active
товар відсутній
IPW60R099CP IPW60R099CP Infineon Technologies INFNS16488-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 31A TO247-3-1
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
товар відсутній
IPW60R099CPA IPW60R099CPA Infineon Technologies ONSM-S-A0003585272-1.pdf?t.download=true&u=5oefqw Description: IPW60R099 - 600V-800V N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
товар відсутній
TLS202B1MBV33HTSA1 TLS202B1MBV33HTSA1 Infineon Technologies Infineon-TLS202B1MBV33-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969dad1574220 Description: IC REG LINEAR 3.3V 150MA SCT595
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 63dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLS202B1MBV33HTSA1 TLS202B1MBV33HTSA1 Infineon Technologies Infineon-TLS202B1MBV33-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969dad1574220 Description: IC REG LINEAR 3.3V 150MA SCT595
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 63dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2680 шт:
термін постачання 21-31 дні (днів)
4+76.3 грн
10+ 65.84 грн
25+ 62.43 грн
100+ 48.12 грн
250+ 44.98 грн
500+ 39.75 грн
1000+ 30.87 грн
Мінімальне замовлення: 4
IR3566BMTRPBF IR3566BMTRPBF Infineon Technologies pb-ir3566b.pdf?fileId=5546d462533600a40153568028fe28eb Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Supplier Device Package: 48-QFN (6x6)
товар відсутній
IR3566BMTRPBF IR3566BMTRPBF Infineon Technologies pb-ir3566b.pdf?fileId=5546d462533600a40153568028fe28eb Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Supplier Device Package: 48-QFN (6x6)
на замовлення 1755 шт:
термін постачання 21-31 дні (днів)
1+512.77 грн
10+ 446.45 грн
25+ 425.7 грн
100+ 346.88 грн
250+ 331.29 грн
500+ 302.06 грн
1000+ 258.77 грн
BSC0902NSATMA1 BSC0902NSATMA1 Infineon Technologies BSC0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cc053cffb38b5 Description: MOSFET N-CH 30V 24A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+30.83 грн
Мінімальне замовлення: 5000
BSC0902NSATMA1 BSC0902NSATMA1 Infineon Technologies BSC0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cc053cffb38b5 Description: MOSFET N-CH 30V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 8393 шт:
термін постачання 21-31 дні (днів)
4+78.59 грн
10+ 61.65 грн
100+ 47.96 грн
500+ 38.15 грн
1000+ 31.08 грн
2000+ 29.25 грн
Мінімальне замовлення: 4
BSC0902NSIATMA1 BSC0902NSIATMA1 Infineon Technologies BSC0902NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308ea027703424 Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 26081 шт:
термін постачання 21-31 дні (днів)
6+59.52 грн
10+ 46.44 грн
100+ 36.09 грн
500+ 28.7 грн
1000+ 28.39 грн
Мінімальне замовлення: 6
BSC0901NSATMA1 BSC0901NSATMA1 Infineon Technologies BSC0901NS_Rev+1.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc8040080376 Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 32285 шт:
термін постачання 21-31 дні (днів)
5+62.57 грн
10+ 49.38 грн
100+ 38.38 грн
500+ 30.53 грн
1000+ 30.2 грн
Мінімальне замовлення: 5
BSC091N03MSCG BSC091N03MSCG Infineon Technologies INFNS13697-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
1250+17.18 грн
Мінімальне замовлення: 1250
BSC0908NS BSC0908NS Infineon Technologies INFNS27230-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
на замовлення 41400 шт:
термін постачання 21-31 дні (днів)
979+22.19 грн
Мінімальне замовлення: 979
XC2060N40F80LRABKXUMA1 Infineon Technologies Description: IC MCU 16BIT FLASH
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товар відсутній
XC2060N40F80LAAKXUMA1 XC2060N40F80LAAKXUMA1 Infineon Technologies Product_Cat_3-10-14.pdf Description: IC MCU 16/32B 320KB FLSH 100LQFP
товар відсутній
IPD650P06NMATMA1 IPD650P06NMATMA1 Infineon Technologies Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1 Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+52.29 грн
5000+ 48.46 грн
Мінімальне замовлення: 2500
IPD650P06NMATMA1 IPD650P06NMATMA1 Infineon Technologies Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1 Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
на замовлення 11295 шт:
термін постачання 21-31 дні (днів)
3+115.98 грн
10+ 92.73 грн
100+ 73.83 грн
500+ 58.63 грн
1000+ 49.75 грн
Мінімальне замовлення: 3
BC807-16WE6327 BC807-16WE6327 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
13172+1.42 грн
Мінімальне замовлення: 13172
BC80716E6327 BC80716E6327 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
10377+2.13 грн
Мінімальне замовлення: 10377
IPT059N15N3ATMA1 IPT059N15N3ATMA1 Infineon Technologies IPT059N15N3+G_Rev1.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30433e9d5d11013e9e62778d0185 Description: MOSFET N-CH 150V 155A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 155A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 75 V
на замовлення 1957 шт:
термін постачання 21-31 дні (днів)
1+601.28 грн
10+ 496.71 грн
100+ 413.91 грн
500+ 342.74 грн
1000+ 308.47 грн
CWM60FN Infineon Technologies Description: CWM60FN - RECTIFIER DIODE
товар відсутній
SPA08N80C3 SPA08N80C3 Infineon Technologies INFN-S-A0004583436-1.pdf?t.download=true&u=5oefqw Description: SPA08N80 - 800V COOLMOS N-CHANNE
товар відсутній
SPP08N80C3 SPP08N80C3 Infineon Technologies Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a Description: SPP08N80 - 800V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товар відсутній
IFX30081LDVGRNXUMA1 IFX30081LDVGRNXUMA1 Infineon Technologies Infineon-High-Performance-Industrial-Linear-Voltage-Regulators-PB-v01_00-EN.pdf?fileId=5546d4625607bd13015659ef06a40d5f Description: IC REG LINEAR 50MA TSON-10
товар відсутній
TLE4206-2G TLE4206-2G Infineon Technologies Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40 Description: TLE4206 - SERVO AND STEPPER MOTO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Applications: Automotive
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14-22
Motor Type - AC, DC: Servo DC
Part Status: Active
товар відсутній
IPBE65R075CFD7AATMA1 IPBE65R075CFD7AATMA1 Infineon Technologies Infineon-IPBE65R075CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a7a137c8a Description: MOSFET N-CH 650V 32A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
BFP450 BFP450 Infineon Technologies INFNS30285-1.pdf?t.download=true&u=5oefqw Description: RF SMALL SIGNAL BIPOLAR TRANSIST
Packaging: Bulk
Part Status: Active
на замовлення 118871 шт:
термін постачання 21-31 дні (днів)
1385+15.65 грн
Мінімальне замовлення: 1385
PEB4265-2TV1.1 Infineon Technologies Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
Part Status: Active
на замовлення 769 шт:
термін постачання 21-31 дні (днів)
64+328.78 грн
Мінімальне замовлення: 64
SPU02N60C3 Infineon Technologies Infineon-SPD_U02N60C3-DS-v02_06-EN.pdf?fileId=db3a304412b407950112b42d79214883 Description: SPU02N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO-251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
товар відсутній
IPB026N06NATMA1 IPB026N06NATMA1 Infineon Technologies IPB026N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043372d5cc8013754c7b2a74f7c Description: MOSFET N-CH 60V 25A/100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+78.59 грн
2000+ 71.89 грн
Мінімальне замовлення: 1000
IPB026N06NATMA1 IPB026N06NATMA1 Infineon Technologies IPB026N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043372d5cc8013754c7b2a74f7c Description: MOSFET N-CH 60V 25A/100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
на замовлення 2943 шт:
термін постачання 21-31 дні (днів)
2+165.58 грн
10+ 132.41 грн
100+ 105.4 грн
500+ 83.7 грн
Мінімальне замовлення: 2
IPP060N06N IPP060N06N Infineon Technologies INFNS19758-1.pdf?t.download=true&u=5oefqw Description: IPP060N06 - 12V-300V N-CHANNEL P
товар відсутній
IPT60R035CFD7XTMA1 IPT60R035CFD7XTMA1 Infineon Technologies Infineon-IPT60R035CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a2c2130e6 Description: MOSFET N-CH 600V 67A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 24.9A, 10V
Power Dissipation (Max): 351W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V
товар відсутній
CY8C20636AN-24LTXI CY8C20636AN-24LTXI Infineon Technologies download Description: IC CAPSENCE 8K FLASH 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 19824 шт:
термін постачання 21-31 дні (днів)
153+150.32 грн
Мінімальне замовлення: 153
TLE49762KHTSA1 TLE49762KHTSA1 Infineon Technologies Infineon-TLE4976_2K-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432c59a87e012c5e9c3dc5351c Description: MAGNETIC SWITCH UNIPOLAR SC59
товар відсутній
TLE49762KHTSA1 TLE49762KHTSA1 Infineon Technologies Infineon-TLE4976_2K-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432c59a87e012c5e9c3dc5351c Description: MAGNETIC SWITCH UNIPOLAR SC59
на замовлення 495000 шт:
термін постачання 21-31 дні (днів)
995+23.22 грн
Мінімальне замовлення: 995
TLE4976-2K TLE4976-2K Infineon Technologies Infineon-TLE4976_2K-DS-v01_02-en.pdf?fileId=db3a30432c59a87e012c5e9c3dc5351c Description: TLE4976 - HALL SWITCH
на замовлення 252000 шт:
термін постачання 21-31 дні (днів)
995+23.22 грн
Мінімальне замовлення: 995
IPP60R385CP IPP60R385CP Infineon Technologies INFNS15867-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 9A TO220-3-1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
229+94.61 грн
Мінімальне замовлення: 229
SP001017058 Infineon Technologies Infineon-IPX60R380P6-DS-v02_03-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Description: IPP60R380P6 - 600V N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
267+86.22 грн
Мінімальне замовлення: 267
BAS116E6433 BAS116E6433 Infineon Technologies SIEMD095-236.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 80V 250MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
товар відсутній
BAS116E6327 BAS116E6327 Infineon Technologies INFNS10816-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, 0.25A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
товар відсутній
AUIR3241SBOARDB2BTOBO1 AUIR3241SBOARDB2BTOBO1 Infineon Technologies Infineon-AUIR324_demoboard-UserManual-v02_00-EN.pdf?fileId=5546d46265f064ff016667e5d4133c3f Description: DEMO BOARD B2B AUIR3241S
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AUIR3241S, AUIR3242S
Supplied Contents: Board(s)
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+10707.79 грн
BAW56WE6433 BAW56WE6433 Infineon Technologies INFNS11183-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY GP 80V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
на замовлення 190000 шт:
термін постачання 21-31 дні (днів)
13172+1.42 грн
Мінімальне замовлення: 13172
DEMO2PCS01GTOBO1 Infineon Technologies Description: BOARD DEMO ICE2PCS01G
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: ICE2PCS01G
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
IPD060N03LG IPD060N03LG Infineon Technologies INFNS16443-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
товар відсутній
BGA915N7E6327XTMA1 BGA915N7E6327XTMA1 Infineon Technologies INFNS16698-1.pdf?t.download=true&u=5oefqw Description: IC AMP UMTS 800MHZ/900MHZ TSLP16
Packaging: Bulk
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.7V ~ 3V
Gain: 16.1dB
Current - Supply: 3.4mA
Noise Figure: 1.1dB
P1dB: -6dBm
Supplier Device Package: TSLP-16-1
на замовлення 10158 шт:
термін постачання 21-31 дні (днів)
693+29.99 грн
Мінімальне замовлення: 693
BGB717L7ESDE6327 BGB717L7ESDE6327 Infineon Technologies INFNS27657-1.pdf?t.download=true&u=5oefqw Description: IC AMP FM 76MHZ-108MHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 76MHz ~ 108MHz
RF Type: FM
Voltage - Supply: 1.8V ~ 4V
Gain: 12dB
Current - Supply: 3mA
Noise Figure: 1dB
P1dB: -5.5dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSLP-7-1
на замовлення 132804 шт:
термін постачання 21-31 дні (днів)
670+32.57 грн
Мінімальне замовлення: 670
BGA715L7E6327 Infineon Technologies INFNS13467-1.pdf?t.download=true&u=5oefqw Description: IC AMP UMTS 1.9/2.1GHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 17dB
Current - Supply: 3.6mA
Noise Figure: 1.1dB
P1dB: -8dBm
Test Frequency: 2.1GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
на замовлення 11336 шт:
термін постачання 21-31 дні (днів)
726+31.28 грн
Мінімальне замовлення: 726
S29GL512T11TFV010 S29GL512T11TFV010 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товар відсутній
S29GL512T12TFN010 S29GL512T12TFN010 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 546 шт:
термін постачання 21-31 дні (днів)
1+933.2 грн
10+ 831.7 грн
25+ 820.43 грн
40+ 760.26 грн
91+ 666.26 грн
273+ 637.69 грн
455+ 623.16 грн
SLE 4418 M2.2 Infineon Technologies SLE4418,%20SLE4428.pdf Description: IC EEPROM 1KBYTE M2.2 PKG
товар відсутній
SPW16N50C3 SPW16N50C3 Infineon Technologies Infineon-SPW16N50C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42d2eca4824 Description: SPW16N50 - 500V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
141+152.03 грн
Мінімальне замовлення: 141
SPA16N50C3 SPA16N50C3 Infineon Technologies INFNS14199-1.pdf?t.download=true&u=5oefqw Description: SPA16N50 - 500V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товар відсутній
BGA420H6327 BGA420H6327 Infineon Technologies INFNS11594-1.pdf?t.download=true&u=5oefqw Description: IC RF AMP GPS SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
на замовлення 2248 шт:
термін постачання 21-31 дні (днів)
781+26.43 грн
Мінімальне замовлення: 781
IKW25T120 IKW25T120 Infineon Technologies INFNS27302-1.pdf?t.download=true&u=5oefqw description Description: IKW25T120 - DISCRETE IGBT WITH A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/560ns
Switching Energy: 2mJ (on), 2.2mJ (off)
Test Condition: 600V, 25A, 22Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 190 W
товар відсутній
1IRF3710PBF 1IRF3710PBF Infineon Technologies IRSDS11475-1.pdf?t.download=true&u=5oefqw Description: IRF3710 - 100V HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
товар відсутній
RF3710PBF RF3710PBF Infineon Technologies IRSDS11475-1.pdf?t.download=true&u=5oefqw Description: IRF3710 - N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
товар відсутній
IPD80R280P7ATMA1 IPD80R280P7ATMA1 Infineon Technologies Infineon-IPD80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da39b3dc5a9b Description: MOSFET N-CH 800V 17A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
на замовлення 7449 шт:
термін постачання 21-31 дні (днів)
2+196.87 грн
10+ 159.59 грн
100+ 129.07 грн
500+ 107.67 грн
1000+ 92.2 грн
Мінімальне замовлення: 2
IPD80R4K5P7ATMA1 IPD80R4K5P7ATMA1 Infineon Technologies Infineon-IPD80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da0c589b5949 Description: MOSFET N-CH 800V 1.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V
товар відсутній
BC857BE6433HTMA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC857BE6433HTMA1
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 220000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7818+2.82 грн
Мінімальне замовлення: 7818
TLE4242G description Infineon-TLE4242G-DS-v01_10-EN.pdf?fileId=5546d46265f064ff01660bd83f556ecc&redirId=115273
TLE4242G
Виробник: Infineon Technologies
Description: IC LED DRV LIN PWM 500MA TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Automotive
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: PG-TO263-7-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42 V
Part Status: Active
товар відсутній
IPW60R099CP INFNS16488-1.pdf?t.download=true&u=5oefqw
IPW60R099CP
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO247-3-1
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
товар відсутній
IPW60R099CPA ONSM-S-A0003585272-1.pdf?t.download=true&u=5oefqw
IPW60R099CPA
Виробник: Infineon Technologies
Description: IPW60R099 - 600V-800V N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
товар відсутній
TLS202B1MBV33HTSA1 Infineon-TLS202B1MBV33-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969dad1574220
TLS202B1MBV33HTSA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 150MA SCT595
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 63dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLS202B1MBV33HTSA1 Infineon-TLS202B1MBV33-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969dad1574220
TLS202B1MBV33HTSA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 150MA SCT595
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 63dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2680 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+76.3 грн
10+ 65.84 грн
25+ 62.43 грн
100+ 48.12 грн
250+ 44.98 грн
500+ 39.75 грн
1000+ 30.87 грн
Мінімальне замовлення: 4
IR3566BMTRPBF pb-ir3566b.pdf?fileId=5546d462533600a40153568028fe28eb
IR3566BMTRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Supplier Device Package: 48-QFN (6x6)
товар відсутній
IR3566BMTRPBF pb-ir3566b.pdf?fileId=5546d462533600a40153568028fe28eb
IR3566BMTRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Supplier Device Package: 48-QFN (6x6)
на замовлення 1755 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+512.77 грн
10+ 446.45 грн
25+ 425.7 грн
100+ 346.88 грн
250+ 331.29 грн
500+ 302.06 грн
1000+ 258.77 грн
BSC0902NSATMA1 BSC0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cc053cffb38b5
BSC0902NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 24A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+30.83 грн
Мінімальне замовлення: 5000
BSC0902NSATMA1 BSC0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cc053cffb38b5
BSC0902NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 8393 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+78.59 грн
10+ 61.65 грн
100+ 47.96 грн
500+ 38.15 грн
1000+ 31.08 грн
2000+ 29.25 грн
Мінімальне замовлення: 4
BSC0902NSIATMA1 BSC0902NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308ea027703424
BSC0902NSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 26081 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+59.52 грн
10+ 46.44 грн
100+ 36.09 грн
500+ 28.7 грн
1000+ 28.39 грн
Мінімальне замовлення: 6
BSC0901NSATMA1 BSC0901NS_Rev+1.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc8040080376
BSC0901NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 32285 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+62.57 грн
10+ 49.38 грн
100+ 38.38 грн
500+ 30.53 грн
1000+ 30.2 грн
Мінімальне замовлення: 5
BSC091N03MSCG INFNS13697-1.pdf?t.download=true&u=5oefqw
BSC091N03MSCG
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1250+17.18 грн
Мінімальне замовлення: 1250
BSC0908NS INFNS27230-1.pdf?t.download=true&u=5oefqw
BSC0908NS
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
на замовлення 41400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
979+22.19 грн
Мінімальне замовлення: 979
XC2060N40F80LRABKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT FLASH
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товар відсутній
XC2060N40F80LAAKXUMA1 Product_Cat_3-10-14.pdf
XC2060N40F80LAAKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
товар відсутній
IPD650P06NMATMA1 Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1
IPD650P06NMATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+52.29 грн
5000+ 48.46 грн
Мінімальне замовлення: 2500
IPD650P06NMATMA1 Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1
IPD650P06NMATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
на замовлення 11295 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+115.98 грн
10+ 92.73 грн
100+ 73.83 грн
500+ 58.63 грн
1000+ 49.75 грн
Мінімальне замовлення: 3
BC807-16WE6327 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC807-16WE6327
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13172+1.42 грн
Мінімальне замовлення: 13172
BC80716E6327 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC80716E6327
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10377+2.13 грн
Мінімальне замовлення: 10377
IPT059N15N3ATMA1 IPT059N15N3+G_Rev1.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30433e9d5d11013e9e62778d0185
IPT059N15N3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 155A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 155A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 75 V
на замовлення 1957 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+601.28 грн
10+ 496.71 грн
100+ 413.91 грн
500+ 342.74 грн
1000+ 308.47 грн
CWM60FN
Виробник: Infineon Technologies
Description: CWM60FN - RECTIFIER DIODE
товар відсутній
SPA08N80C3 INFN-S-A0004583436-1.pdf?t.download=true&u=5oefqw
SPA08N80C3
Виробник: Infineon Technologies
Description: SPA08N80 - 800V COOLMOS N-CHANNE
товар відсутній
SPP08N80C3 Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a
SPP08N80C3
Виробник: Infineon Technologies
Description: SPP08N80 - 800V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товар відсутній
IFX30081LDVGRNXUMA1 Infineon-High-Performance-Industrial-Linear-Voltage-Regulators-PB-v01_00-EN.pdf?fileId=5546d4625607bd13015659ef06a40d5f
IFX30081LDVGRNXUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 50MA TSON-10
товар відсутній
TLE4206-2G Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40
TLE4206-2G
Виробник: Infineon Technologies
Description: TLE4206 - SERVO AND STEPPER MOTO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Applications: Automotive
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14-22
Motor Type - AC, DC: Servo DC
Part Status: Active
товар відсутній
IPBE65R075CFD7AATMA1 Infineon-IPBE65R075CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a7a137c8a
IPBE65R075CFD7AATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 32A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
BFP450 INFNS30285-1.pdf?t.download=true&u=5oefqw
BFP450
Виробник: Infineon Technologies
Description: RF SMALL SIGNAL BIPOLAR TRANSIST
Packaging: Bulk
Part Status: Active
на замовлення 118871 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1385+15.65 грн
Мінімальне замовлення: 1385
PEB4265-2TV1.1
Виробник: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
Part Status: Active
на замовлення 769 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
64+328.78 грн
Мінімальне замовлення: 64
SPU02N60C3 Infineon-SPD_U02N60C3-DS-v02_06-EN.pdf?fileId=db3a304412b407950112b42d79214883
Виробник: Infineon Technologies
Description: SPU02N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO-251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
товар відсутній
IPB026N06NATMA1 IPB026N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043372d5cc8013754c7b2a74f7c
IPB026N06NATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 25A/100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+78.59 грн
2000+ 71.89 грн
Мінімальне замовлення: 1000
IPB026N06NATMA1 IPB026N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043372d5cc8013754c7b2a74f7c
IPB026N06NATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 25A/100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
на замовлення 2943 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+165.58 грн
10+ 132.41 грн
100+ 105.4 грн
500+ 83.7 грн
Мінімальне замовлення: 2
IPP060N06N INFNS19758-1.pdf?t.download=true&u=5oefqw
IPP060N06N
Виробник: Infineon Technologies
Description: IPP060N06 - 12V-300V N-CHANNEL P
товар відсутній
IPT60R035CFD7XTMA1 Infineon-IPT60R035CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a2c2130e6
IPT60R035CFD7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 67A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 24.9A, 10V
Power Dissipation (Max): 351W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V
товар відсутній
CY8C20636AN-24LTXI download
CY8C20636AN-24LTXI
Виробник: Infineon Technologies
Description: IC CAPSENCE 8K FLASH 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 19824 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
153+150.32 грн
Мінімальне замовлення: 153
TLE49762KHTSA1 Infineon-TLE4976_2K-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432c59a87e012c5e9c3dc5351c
TLE49762KHTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
товар відсутній
TLE49762KHTSA1 Infineon-TLE4976_2K-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432c59a87e012c5e9c3dc5351c
TLE49762KHTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
на замовлення 495000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
995+23.22 грн
Мінімальне замовлення: 995
TLE4976-2K Infineon-TLE4976_2K-DS-v01_02-en.pdf?fileId=db3a30432c59a87e012c5e9c3dc5351c
TLE4976-2K
Виробник: Infineon Technologies
Description: TLE4976 - HALL SWITCH
на замовлення 252000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
995+23.22 грн
Мінімальне замовлення: 995
IPP60R385CP INFNS15867-1.pdf?t.download=true&u=5oefqw
IPP60R385CP
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO220-3-1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
229+94.61 грн
Мінімальне замовлення: 229
SP001017058 Infineon-IPX60R380P6-DS-v02_03-EN.pdf?fileId=db3a3043416e106e01416e9316410203
Виробник: Infineon Technologies
Description: IPP60R380P6 - 600V N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
267+86.22 грн
Мінімальне замовлення: 267
BAS116E6433 SIEMD095-236.pdf?t.download=true&u=5oefqw
BAS116E6433
Виробник: Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
товар відсутній
BAS116E6327 INFNS10816-1.pdf?t.download=true&u=5oefqw
BAS116E6327
Виробник: Infineon Technologies
Description: RECTIFIER DIODE, 0.25A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
товар відсутній
AUIR3241SBOARDB2BTOBO1 Infineon-AUIR324_demoboard-UserManual-v02_00-EN.pdf?fileId=5546d46265f064ff016667e5d4133c3f
AUIR3241SBOARDB2BTOBO1
Виробник: Infineon Technologies
Description: DEMO BOARD B2B AUIR3241S
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AUIR3241S, AUIR3242S
Supplied Contents: Board(s)
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+10707.79 грн
BAW56WE6433 INFNS11183-1.pdf?t.download=true&u=5oefqw
BAW56WE6433
Виробник: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
на замовлення 190000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13172+1.42 грн
Мінімальне замовлення: 13172
DEMO2PCS01GTOBO1
Виробник: Infineon Technologies
Description: BOARD DEMO ICE2PCS01G
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: ICE2PCS01G
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
IPD060N03LG INFNS16443-1.pdf?t.download=true&u=5oefqw
IPD060N03LG
Виробник: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
товар відсутній
BGA915N7E6327XTMA1 INFNS16698-1.pdf?t.download=true&u=5oefqw
BGA915N7E6327XTMA1
Виробник: Infineon Technologies
Description: IC AMP UMTS 800MHZ/900MHZ TSLP16
Packaging: Bulk
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.7V ~ 3V
Gain: 16.1dB
Current - Supply: 3.4mA
Noise Figure: 1.1dB
P1dB: -6dBm
Supplier Device Package: TSLP-16-1
на замовлення 10158 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
693+29.99 грн
Мінімальне замовлення: 693
BGB717L7ESDE6327 INFNS27657-1.pdf?t.download=true&u=5oefqw
BGB717L7ESDE6327
Виробник: Infineon Technologies
Description: IC AMP FM 76MHZ-108MHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 76MHz ~ 108MHz
RF Type: FM
Voltage - Supply: 1.8V ~ 4V
Gain: 12dB
Current - Supply: 3mA
Noise Figure: 1dB
P1dB: -5.5dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSLP-7-1
на замовлення 132804 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
670+32.57 грн
Мінімальне замовлення: 670
BGA715L7E6327 INFNS13467-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IC AMP UMTS 1.9/2.1GHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 17dB
Current - Supply: 3.6mA
Noise Figure: 1.1dB
P1dB: -8dBm
Test Frequency: 2.1GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
на замовлення 11336 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
726+31.28 грн
Мінімальне замовлення: 726
S29GL512T11TFV010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T11TFV010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товар відсутній
S29GL512T12TFN010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T12TFN010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 546 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+933.2 грн
10+ 831.7 грн
25+ 820.43 грн
40+ 760.26 грн
91+ 666.26 грн
273+ 637.69 грн
455+ 623.16 грн
SLE 4418 M2.2 SLE4418,%20SLE4428.pdf
Виробник: Infineon Technologies
Description: IC EEPROM 1KBYTE M2.2 PKG
товар відсутній
SPW16N50C3 Infineon-SPW16N50C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42d2eca4824
SPW16N50C3
Виробник: Infineon Technologies
Description: SPW16N50 - 500V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
141+152.03 грн
Мінімальне замовлення: 141
SPA16N50C3 INFNS14199-1.pdf?t.download=true&u=5oefqw
SPA16N50C3
Виробник: Infineon Technologies
Description: SPA16N50 - 500V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товар відсутній
BGA420H6327 INFNS11594-1.pdf?t.download=true&u=5oefqw
BGA420H6327
Виробник: Infineon Technologies
Description: IC RF AMP GPS SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
на замовлення 2248 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
781+26.43 грн
Мінімальне замовлення: 781
IKW25T120 description INFNS27302-1.pdf?t.download=true&u=5oefqw
IKW25T120
Виробник: Infineon Technologies
Description: IKW25T120 - DISCRETE IGBT WITH A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/560ns
Switching Energy: 2mJ (on), 2.2mJ (off)
Test Condition: 600V, 25A, 22Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 190 W
товар відсутній
1IRF3710PBF IRSDS11475-1.pdf?t.download=true&u=5oefqw
1IRF3710PBF
Виробник: Infineon Technologies
Description: IRF3710 - 100V HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
товар відсутній
RF3710PBF IRSDS11475-1.pdf?t.download=true&u=5oefqw
RF3710PBF
Виробник: Infineon Technologies
Description: IRF3710 - N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
товар відсутній
IPD80R280P7ATMA1 Infineon-IPD80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da39b3dc5a9b
IPD80R280P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
на замовлення 7449 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+196.87 грн
10+ 159.59 грн
100+ 129.07 грн
500+ 107.67 грн
1000+ 92.2 грн
Мінімальне замовлення: 2
IPD80R4K5P7ATMA1 Infineon-IPD80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da0c589b5949
IPD80R4K5P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V
товар відсутній
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