на замовлення 3328 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 704.45 грн |
| 10+ | 595.42 грн |
| 100+ | 430.99 грн |
| 500+ | 380.21 грн |
| 1000+ | 342.11 грн |
| 4000+ | 326.6 грн |
Відгуки про товар
Написати відгук
Технічний опис IPT60R035CFD7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 67A 8HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 67A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 24.9A, 10V, Power Dissipation (Max): 351W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.25mA, Supplier Device Package: PG-HSOF-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V.
Інші пропозиції IPT60R035CFD7XTMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPT60R035CFD7XTMA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 600V 67A 8HSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 24.9A, 10V Power Dissipation (Max): 351W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.25mA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V |
товар відсутній |
|
|
|
IPT60R035CFD7XTMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 67A 8HSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 24.9A, 10V Power Dissipation (Max): 351W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.25mA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V |
товар відсутній |