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IPD80R4K5P7ATMA1 IPD80R4K5P7ATMA1 Infineon Technologies Infineon-IPD80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da0c589b5949 Description: MOSFET N-CH 800V 1.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V
товар відсутній
SPB07N60C3 SPB07N60C3 Infineon Technologies Infineon-SPB07N60C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42df065491f Description: SPB07N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
товар відсутній
SPU07N60C3BKMA1 SPU07N60C3BKMA1 Infineon Technologies Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4 Description: MOSFET N-CH 650V 7.3A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
на замовлення 787 шт:
термін постачання 21-31 дні (днів)
329+65.01 грн
Мінімальне замовлення: 329
CY7C057V-12BBC CY7C057V-12BBC Infineon Technologies CY7C056V,057V.pdf Description: IC SRAM 1.152MBIT PAR 172FBGA
на замовлення 2169 шт:
термін постачання 21-31 дні (днів)
4+5864.18 грн
Мінімальне замовлення: 4
BUZ30AH3045A Infineon Technologies INFNS15132-1.pdf?t.download=true&u=5oefqw Description: BUZ30 - 12V-300V N-CHANNEL POWER
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
товар відсутній
BSM150GT120DN2BOSA1 Infineon Technologies Description: IGBT MODULE 1200V
Packaging: Tray
Part Status: Last Time Buy
товар відсутній
FP35R12KT4B11BOSA1 FP35R12KT4B11BOSA1 Infineon Technologies Infineon-FP35R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431689f4420116c457e537082f Description: IGBT MOD 1200V 35A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
5+5684.67 грн
Мінімальне замовлення: 5
ESD204B102ELSE6327XTSA1 ESD204B102ELSE6327XTSA1 Infineon Technologies ESD204-B1-02.pdf Description: TVS DIODE 14VWM 28VC TSSLP-2-3
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
4157+4.93 грн
Мінімальне замовлення: 4157
IKW20N65ET7XKSA1 IKW20N65ET7XKSA1 Infineon Technologies Infineon-IKW20N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bea06e57ef Description: IGBT TRENCH FS 650V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/210ns
Switching Energy: 360µJ (on), 360µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1432 шт:
термін постачання 21-31 дні (днів)
2+248.75 грн
30+ 190.11 грн
120+ 162.96 грн
510+ 135.94 грн
1020+ 116.4 грн
Мінімальне замовлення: 2
IKW50N65ET7XKSA1 IKW50N65ET7XKSA1 Infineon Technologies Infineon-IKW50N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bed62757f8 Description: IGBT TRENCH FS 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/350ns
Switching Energy: 1.2mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 9Ohm, 15V
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 273 W
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BAV70WE6327 BAV70WE6327 Infineon Technologies INFNS11270-1.pdf?t.download=true&u=5oefqw Description: HIGH SPEED SWITCHING DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
товар відсутній
BAV70WH6433 BAV70WH6433 Infineon Technologies INFNS11270-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY GP 80V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
на замовлення 926466 шт:
термін постачання 21-31 дні (днів)
6632+3.49 грн
Мінімальне замовлення: 6632
BAV 70W H6327 BAV 70W H6327 Infineon Technologies INFNS11270-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY GP 80V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)
6632+3.48 грн
Мінімальне замовлення: 6632
BSZ900N15NS3GATMA1 BSZ900N15NS3GATMA1 Infineon Technologies BSZ900N15NS3+Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a304326623792012669f7decc224c Description: MOSFET N-CH 150V 13A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V
на замовлення 11831 шт:
термін постачання 21-31 дні (днів)
4+95.38 грн
10+ 75.09 грн
100+ 58.39 грн
500+ 46.45 грн
1000+ 37.84 грн
2000+ 35.62 грн
Мінімальне замовлення: 4
BCR133E6393 BCR133E6393 Infineon Technologies Infineon-TLV4961-3M-DS-v01_00-EN.pdf?fileId=5546d46253f650570154529f327d6fdf Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
BCR133TE6327 BCR133TE6327 Infineon Technologies INFNS11633-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
ICE2A165IN ICE2A165IN Infineon Technologies Infineon-ICE2XXX-DS-v02_10-en.pdf?fileId=db3a304412b407950112b418cbe626ac Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 31 W
товар відсутній
TLE4267GM TLE4267GM Infineon Technologies Infineon-TLE4267-DS-v02_51-EN.pdf?fileId=5546d46259d9a4bf0159f967db593e49 Description: IC REG LIN FIXED POS LDO REG 5V
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
товар відсутній
BAT15-099E6327 BAT15-099E6327 Infineon Technologies INFNS15420-1.pdf?t.download=true&u=5oefqw Description: BAT15 - RF MIXER AND DETECTOR SC
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Resistance @ If, F: 5.5Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT143-4
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
товар відсутній
BCW60FFE6327 BCW60FFE6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: BCW60 - LOW NOISE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
товар відсутній
BF1005SE6327HTSA1 BF1005SE6327HTSA1 Infineon Technologies BF1005S_Series.pdf Description: RF MOSFET 5V SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 22dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT-143-3D
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
на замовлення 179900 шт:
термін постачання 21-31 дні (днів)
4157+4.93 грн
Мінімальне замовлення: 4157
BF1005SE6327 BF1005SE6327 Infineon Technologies INFNS10758-1.pdf?t.download=true&u=5oefqw Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 800µA
Frequency: 1GHz
Configuration: N-Channel
Gain: 22dB
Technology: MOSFET
Noise Figure: 1.6dB
Supplier Device Package: SOT143 (SC-61)
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
4157+5.34 грн
Мінімальне замовлення: 4157
BF1005E6327HTSA1 BF1005E6327HTSA1 Infineon Technologies BF1005.pdf Description: RF MOSFET 5V SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 19dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT-143-3D
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
на замовлення 498616 шт:
термін постачання 21-31 дні (днів)
2968+7.05 грн
Мінімальне замовлення: 2968
CG7297AM Infineon Technologies Description: IC MCU CAPSENSE 32QFN
товар відсутній
IPP06CN10LG IPP06CN10LG Infineon Technologies INFNS17009-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 180µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 50 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
208+102.14 грн
Мінімальне замовлення: 208
IPP05CN10L G IPP05CN10L G Infineon Technologies IPP05CN10L.pdf Description: MOSFET N-CH 100V 100A TO220-3
товар відсутній
FF450R07ME4BOSA1 FF450R07ME4BOSA1 Infineon Technologies Infineon-FF450R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e227bfd1087 Description: GBT MODULE 650V 450A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27.5 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+8755.16 грн
F4-50R07W2H3_B51 Infineon Technologies F4-50R07W2H3_B51_Rev2.0_10-29-14.pdf Description: IGBT MODULE VCES 650V 50A
товар відсутній
DF450R17N2E4PB11BPSA1 Infineon Technologies Description: IGBT MODULE LOW POWER ECONO
товар відсутній
FF450R06ME3BOSA1 Infineon Technologies Infineon-FF450R06ME3-DS-v03_02-en_de.pdf?fileId=db3a304318a6cd680118e516f837131a Description: IGBT MOD 600V 550A 1250W
товар відсутній
FF450R17ME4B11BOSA1 FF450R17ME4B11BOSA1 Infineon Technologies Infineon-FF450R17ME4_B11-DS-v03_01-en_de.pdf?fileId=db3a30432fbc32ee012fc06716403a90 Description: IGBT MOD 1700V 600A 2500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
товар відсутній
FF450R17ME4PBOSA1 FF450R17ME4PBOSA1 Infineon Technologies Infineon-FF450R17ME4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b3e41ca75068e Description: IGBT MOD 1700V 900A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
товар відсутній
FF450R17IE4BOSA2 Infineon Technologies Infineon-FF450R17IE4-DS-v03_01-en_de.pdf?fileId=db3a30431ff98815012023af4c1b5a9f Description: IGBT MOD 1700V 620A 2800W
товар відсутній
FF450R33T3E3P2BPSA1 Infineon Technologies Description: IGBT MOD 3300V 450A AGXHP100-3
товар відсутній
FF450R33T3E3P3BPMA1 Infineon Technologies Description: IGBT MOD 3300V 450A AGXHP100-3
товар відсутній
FF450R33T3E3P4BPMA1 Infineon Technologies Description: IGBT MOD 3300V 450A AGXHP100-3
товар відсутній
FF450R33T3E3P6BPMA1 Infineon Technologies Description: IGBT MOD 3300V 450A AGXHP100-3
товар відсутній
FF450R33T3E3B5P2BPSA1 Infineon Technologies Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
товар відсутній
FF450R33T3E3B5P3BPSA1 Infineon Technologies Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
товар відсутній
FF450R33T3E3B5P4BPMA1 Infineon Technologies Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
товар відсутній
FF450R33T3E3B5P6BPMA1 Infineon Technologies Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
товар відсутній
F450R12KS4B11BOSA1 F450R12KS4B11BOSA1 Infineon Technologies Infineon-F4_50R12KS4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043345a30bc01346aa2466e1366 Description: IGBT MOD 1200V 70A 355W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
4+6684.83 грн
Мінімальне замовлення: 4
TLS805B1LDVXUMA1 TLS805B1LDVXUMA1 Infineon Technologies Infineon-TLS805B1-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc1015969ed6e11424b Description: IC REG LIN POS ADJ 50MA TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Max): 41.7V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 50mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 11 µA
Qualification: AEC-Q100
товар відсутній
TLS805B1LDV50XUMA1 TLS805B1LDV50XUMA1 Infineon Technologies Infineon-TLS805B1LD%20V50-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969ed62f84247 Description: IC REG LINEAR 5V 50MA TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.35V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3+108.35 грн
Мінімальне замовлення: 3
TLS805B1LDVBOARDTOBO1 Infineon Technologies Infineon-Z8F55443029_TLS805x1LD-TLS810x1LD-Demoboard-UserManual-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a46f9d9c8037f Description: TLS805B1LDV BOARD
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+4092.97 грн
TLS805B1LDV33XUMA1 TLS805B1LDV33XUMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: IC REG LIN 3.3V 50MA TSON-10-2
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10-2
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.35V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 µA
товар відсутній
SPD18P06PG SPD18P06PG Infineon Technologies Infineon-SPD18P06P-DS-v03_04-en.pdf?fileId=db3a30431ed1d7b2011f404c85eb4ee3 Description: SPD18P06 - 20V-250V P-CHANNEL PO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
товар відсутній
IPI320N203G IPI320N203G Infineon Technologies Infineon-IPP_B_I_320N20N3G-DS-v02_03-en.pdf?fileId=db3a3043243b5f170124967064ba184a Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
161+135.34 грн
Мінімальне замовлення: 161
BTS426L1E3062ABUMA1 BTS426L1E3062ABUMA1 Infineon Technologies BTS426L1.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
на замовлення 2180 шт:
термін постачання 21-31 дні (днів)
1+361.68 грн
10+ 312.36 грн
25+ 295.29 грн
100+ 240.17 грн
250+ 227.85 грн
500+ 204.45 грн
IPB45N06S409ATMA2 IPB45N06S409ATMA2 Infineon Technologies IPx45N06S4-09.pdf Description: MOSFET N-CH 60V 45A TO263-3
товар відсутній
IPP45N06S409AKSA2 IPP45N06S409AKSA2 Infineon Technologies IPx45N06S4-09.pdf Description: MOSFET N-CH 60V 45A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
392+54.79 грн
Мінімальне замовлення: 392
TLD5190QVXUMA1 TLD5190QVXUMA1 Infineon Technologies Infineon-TLD5190QV-DS-v01_10-EN.pdf?fileId=5546d462625a528f0162af122f3300b8 Description: IC LED DRIVER CTRLR PWM 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-VQFN-48-31
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+115.89 грн
Мінімальне замовлення: 2500
TLD5190QVXUMA1 TLD5190QVXUMA1 Infineon Technologies Infineon-TLD5190QV-DS-v01_10-EN.pdf?fileId=5546d462625a528f0162af122f3300b8 Description: IC LED DRIVER CTRLR PWM 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-VQFN-48-31
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
на замовлення 4827 шт:
термін постачання 21-31 дні (днів)
2+230.44 грн
10+ 199.71 грн
25+ 188.81 грн
100+ 153.56 грн
250+ 145.68 грн
500+ 130.72 грн
1000+ 108.44 грн
Мінімальне замовлення: 2
IPL60R104C7AUMA1 IPL60R104C7AUMA1 Infineon Technologies Infineon-IPL60R104C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b46442265987 Description: MOSFET N-CH 600V 20A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 9.7A, 10V
Power Dissipation (Max): 122W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+178.17 грн
Мінімальне замовлення: 3000
IPL60R104C7AUMA1 IPL60R104C7AUMA1 Infineon Technologies Infineon-IPL60R104C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b46442265987 Description: MOSFET N-CH 600V 20A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 9.7A, 10V
Power Dissipation (Max): 122W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
на замовлення 8897 шт:
термін постачання 21-31 дні (днів)
1+365.5 грн
10+ 295.9 грн
100+ 239.41 грн
500+ 199.71 грн
1000+ 171 грн
IRS2106STRPBF IRS2106STRPBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+39.95 грн
Мінімальне замовлення: 2500
IRS2106STRPBF IRS2106STRPBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4232 шт:
термін постачання 21-31 дні (днів)
4+94.62 грн
10+ 81.05 грн
25+ 76.95 грн
100+ 59.32 грн
250+ 55.45 грн
500+ 49 грн
1000+ 38.05 грн
Мінімальне замовлення: 4
SIDC42D120H6X1SA3 Infineon Technologies SIDC42D120H6.pdf Description: DIODE GP 1.2KV 75A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
SIDC42D170E6X1SA2 Infineon Technologies SIDC42D170E6_L4241M.pdf?folderId=db3a304412b407950112b439a4c16e69&fileId=db3a304412b407950112b439a54e6e6a Description: DIODE GP 1.7KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
товар відсутній
SIDC46D170HX1SA2 Infineon Technologies SIDC46D170H_L4471A.pdf?folderId=db3a304412b407950112b43868fa6ad3&fileId=db3a304412b407950112b43869826ad4 Description: DIODE GP 1.7KV 75A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
товар відсутній
IPD80R4K5P7ATMA1 Infineon-IPD80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da0c589b5949
IPD80R4K5P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V
товар відсутній
SPB07N60C3 Infineon-SPB07N60C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42df065491f
SPB07N60C3
Виробник: Infineon Technologies
Description: SPB07N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
товар відсутній
SPU07N60C3BKMA1 Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4
SPU07N60C3BKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
на замовлення 787 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
329+65.01 грн
Мінімальне замовлення: 329
CY7C057V-12BBC CY7C056V,057V.pdf
CY7C057V-12BBC
Виробник: Infineon Technologies
Description: IC SRAM 1.152MBIT PAR 172FBGA
на замовлення 2169 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+5864.18 грн
Мінімальне замовлення: 4
BUZ30AH3045A INFNS15132-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: BUZ30 - 12V-300V N-CHANNEL POWER
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
товар відсутній
BSM150GT120DN2BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V
Packaging: Tray
Part Status: Last Time Buy
товар відсутній
FP35R12KT4B11BOSA1 Infineon-FP35R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431689f4420116c457e537082f
FP35R12KT4B11BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 35A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+5684.67 грн
Мінімальне замовлення: 5
ESD204B102ELSE6327XTSA1 ESD204-B1-02.pdf
ESD204B102ELSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 28VC TSSLP-2-3
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4157+4.93 грн
Мінімальне замовлення: 4157
IKW20N65ET7XKSA1 Infineon-IKW20N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bea06e57ef
IKW20N65ET7XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/210ns
Switching Energy: 360µJ (on), 360µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1432 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+248.75 грн
30+ 190.11 грн
120+ 162.96 грн
510+ 135.94 грн
1020+ 116.4 грн
Мінімальне замовлення: 2
IKW50N65ET7XKSA1 Infineon-IKW50N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bed62757f8
IKW50N65ET7XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/350ns
Switching Energy: 1.2mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 9Ohm, 15V
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 273 W
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BAV70WE6327 INFNS11270-1.pdf?t.download=true&u=5oefqw
BAV70WE6327
Виробник: Infineon Technologies
Description: HIGH SPEED SWITCHING DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
товар відсутній
BAV70WH6433 INFNS11270-1.pdf?t.download=true&u=5oefqw
BAV70WH6433
Виробник: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
на замовлення 926466 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6632+3.49 грн
Мінімальне замовлення: 6632
BAV 70W H6327 INFNS11270-1.pdf?t.download=true&u=5oefqw
BAV 70W H6327
Виробник: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6632+3.48 грн
Мінімальне замовлення: 6632
BSZ900N15NS3GATMA1 BSZ900N15NS3+Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a304326623792012669f7decc224c
BSZ900N15NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 13A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V
на замовлення 11831 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+95.38 грн
10+ 75.09 грн
100+ 58.39 грн
500+ 46.45 грн
1000+ 37.84 грн
2000+ 35.62 грн
Мінімальне замовлення: 4
BCR133E6393 Infineon-TLV4961-3M-DS-v01_00-EN.pdf?fileId=5546d46253f650570154529f327d6fdf
BCR133E6393
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
BCR133TE6327 INFNS11633-1.pdf?t.download=true&u=5oefqw
BCR133TE6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
ICE2A165IN Infineon-ICE2XXX-DS-v02_10-en.pdf?fileId=db3a304412b407950112b418cbe626ac
ICE2A165IN
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 31 W
товар відсутній
TLE4267GM Infineon-TLE4267-DS-v02_51-EN.pdf?fileId=5546d46259d9a4bf0159f967db593e49
TLE4267GM
Виробник: Infineon Technologies
Description: IC REG LIN FIXED POS LDO REG 5V
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
товар відсутній
BAT15-099E6327 INFNS15420-1.pdf?t.download=true&u=5oefqw
BAT15-099E6327
Виробник: Infineon Technologies
Description: BAT15 - RF MIXER AND DETECTOR SC
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Resistance @ If, F: 5.5Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT143-4
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
товар відсутній
BCW60FFE6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCW60FFE6327
Виробник: Infineon Technologies
Description: BCW60 - LOW NOISE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
товар відсутній
BF1005SE6327HTSA1 BF1005S_Series.pdf
BF1005SE6327HTSA1
Виробник: Infineon Technologies
Description: RF MOSFET 5V SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 22dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT-143-3D
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
на замовлення 179900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4157+4.93 грн
Мінімальне замовлення: 4157
BF1005SE6327 INFNS10758-1.pdf?t.download=true&u=5oefqw
BF1005SE6327
Виробник: Infineon Technologies
Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 800µA
Frequency: 1GHz
Configuration: N-Channel
Gain: 22dB
Technology: MOSFET
Noise Figure: 1.6dB
Supplier Device Package: SOT143 (SC-61)
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4157+5.34 грн
Мінімальне замовлення: 4157
BF1005E6327HTSA1 BF1005.pdf
BF1005E6327HTSA1
Виробник: Infineon Technologies
Description: RF MOSFET 5V SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 19dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT-143-3D
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
на замовлення 498616 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2968+7.05 грн
Мінімальне замовлення: 2968
CG7297AM
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE 32QFN
товар відсутній
IPP06CN10LG INFNS17009-1.pdf?t.download=true&u=5oefqw
IPP06CN10LG
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 180µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 50 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
208+102.14 грн
Мінімальне замовлення: 208
IPP05CN10L G IPP05CN10L.pdf
IPP05CN10L G
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
товар відсутній
FF450R07ME4BOSA1 Infineon-FF450R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e227bfd1087
FF450R07ME4BOSA1
Виробник: Infineon Technologies
Description: GBT MODULE 650V 450A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27.5 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+8755.16 грн
F4-50R07W2H3_B51 F4-50R07W2H3_B51_Rev2.0_10-29-14.pdf
Виробник: Infineon Technologies
Description: IGBT MODULE VCES 650V 50A
товар відсутній
DF450R17N2E4PB11BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
товар відсутній
FF450R06ME3BOSA1 Infineon-FF450R06ME3-DS-v03_02-en_de.pdf?fileId=db3a304318a6cd680118e516f837131a
Виробник: Infineon Technologies
Description: IGBT MOD 600V 550A 1250W
товар відсутній
FF450R17ME4B11BOSA1 Infineon-FF450R17ME4_B11-DS-v03_01-en_de.pdf?fileId=db3a30432fbc32ee012fc06716403a90
FF450R17ME4B11BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 600A 2500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
товар відсутній
FF450R17ME4PBOSA1 Infineon-FF450R17ME4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b3e41ca75068e
FF450R17ME4PBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 900A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
товар відсутній
FF450R17IE4BOSA2 Infineon-FF450R17IE4-DS-v03_01-en_de.pdf?fileId=db3a30431ff98815012023af4c1b5a9f
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 620A 2800W
товар відсутній
FF450R33T3E3P2BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 3300V 450A AGXHP100-3
товар відсутній
FF450R33T3E3P3BPMA1
Виробник: Infineon Technologies
Description: IGBT MOD 3300V 450A AGXHP100-3
товар відсутній
FF450R33T3E3P4BPMA1
Виробник: Infineon Technologies
Description: IGBT MOD 3300V 450A AGXHP100-3
товар відсутній
FF450R33T3E3P6BPMA1
Виробник: Infineon Technologies
Description: IGBT MOD 3300V 450A AGXHP100-3
товар відсутній
FF450R33T3E3B5P2BPSA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
Виробник: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
товар відсутній
FF450R33T3E3B5P3BPSA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
Виробник: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
товар відсутній
FF450R33T3E3B5P4BPMA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
Виробник: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
товар відсутній
FF450R33T3E3B5P6BPMA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
Виробник: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
товар відсутній
F450R12KS4B11BOSA1 Infineon-F4_50R12KS4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043345a30bc01346aa2466e1366
F450R12KS4B11BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 70A 355W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+6684.83 грн
Мінімальне замовлення: 4
TLS805B1LDVXUMA1 Infineon-TLS805B1-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc1015969ed6e11424b
TLS805B1LDVXUMA1
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 50MA TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Max): 41.7V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 50mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 11 µA
Qualification: AEC-Q100
товар відсутній
TLS805B1LDV50XUMA1 Infineon-TLS805B1LD%20V50-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969ed62f84247
TLS805B1LDV50XUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 50MA TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.35V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+108.35 грн
Мінімальне замовлення: 3
TLS805B1LDVBOARDTOBO1 Infineon-Z8F55443029_TLS805x1LD-TLS810x1LD-Demoboard-UserManual-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a46f9d9c8037f
Виробник: Infineon Technologies
Description: TLS805B1LDV BOARD
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+4092.97 грн
TLS805B1LDV33XUMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
TLS805B1LDV33XUMA1
Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 50MA TSON-10-2
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10-2
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.35V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 µA
товар відсутній
SPD18P06PG Infineon-SPD18P06P-DS-v03_04-en.pdf?fileId=db3a30431ed1d7b2011f404c85eb4ee3
SPD18P06PG
Виробник: Infineon Technologies
Description: SPD18P06 - 20V-250V P-CHANNEL PO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
товар відсутній
IPI320N203G Infineon-IPP_B_I_320N20N3G-DS-v02_03-en.pdf?fileId=db3a3043243b5f170124967064ba184a
IPI320N203G
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
161+135.34 грн
Мінімальне замовлення: 161
BTS426L1E3062ABUMA1 BTS426L1.pdf
BTS426L1E3062ABUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
на замовлення 2180 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+361.68 грн
10+ 312.36 грн
25+ 295.29 грн
100+ 240.17 грн
250+ 227.85 грн
500+ 204.45 грн
IPB45N06S409ATMA2 IPx45N06S4-09.pdf
IPB45N06S409ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO263-3
товар відсутній
IPP45N06S409AKSA2 IPx45N06S4-09.pdf
IPP45N06S409AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
392+54.79 грн
Мінімальне замовлення: 392
TLD5190QVXUMA1 Infineon-TLD5190QV-DS-v01_10-EN.pdf?fileId=5546d462625a528f0162af122f3300b8
TLD5190QVXUMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-VQFN-48-31
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+115.89 грн
Мінімальне замовлення: 2500
TLD5190QVXUMA1 Infineon-TLD5190QV-DS-v01_10-EN.pdf?fileId=5546d462625a528f0162af122f3300b8
TLD5190QVXUMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-VQFN-48-31
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
на замовлення 4827 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+230.44 грн
10+ 199.71 грн
25+ 188.81 грн
100+ 153.56 грн
250+ 145.68 грн
500+ 130.72 грн
1000+ 108.44 грн
Мінімальне замовлення: 2
IPL60R104C7AUMA1 Infineon-IPL60R104C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b46442265987
IPL60R104C7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 9.7A, 10V
Power Dissipation (Max): 122W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+178.17 грн
Мінімальне замовлення: 3000
IPL60R104C7AUMA1 Infineon-IPL60R104C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b46442265987
IPL60R104C7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 9.7A, 10V
Power Dissipation (Max): 122W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
на замовлення 8897 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+365.5 грн
10+ 295.9 грн
100+ 239.41 грн
500+ 199.71 грн
1000+ 171 грн
IRS2106STRPBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS2106STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+39.95 грн
Мінімальне замовлення: 2500
IRS2106STRPBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS2106STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4232 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+94.62 грн
10+ 81.05 грн
25+ 76.95 грн
100+ 59.32 грн
250+ 55.45 грн
500+ 49 грн
1000+ 38.05 грн
Мінімальне замовлення: 4
SIDC42D120H6X1SA3 SIDC42D120H6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 75A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
SIDC42D170E6X1SA2 SIDC42D170E6_L4241M.pdf?folderId=db3a304412b407950112b439a4c16e69&fileId=db3a304412b407950112b439a54e6e6a
Виробник: Infineon Technologies
Description: DIODE GP 1.7KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
товар відсутній
SIDC46D170HX1SA2 SIDC46D170H_L4471A.pdf?folderId=db3a304412b407950112b43868fa6ad3&fileId=db3a304412b407950112b43869826ad4
Виробник: Infineon Technologies
Description: DIODE GP 1.7KV 75A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
товар відсутній
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