Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136451) > Сторінка 384 з 2275
Фото | Назва | Виробник | Інформація |
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BSC430N25NSFDATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Supplier Device Package: PG-TSON-8-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V |
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SFH756 | Infineon Technologies |
![]() Packaging: Bulk Wavelength: 660nm Voltage - Forward (Vf) (Typ): 2.1V Spectral Bandwidth: 25nm Capacitance: 30 pF Voltage - DC Reverse (Vr) (Max): 3 V Current - DC Forward (If) (Max): 50 mA |
на замовлення 12444 шт: термін постачання 21-31 дні (днів) |
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CY7C1460SV25-250BZC | Infineon Technologies | Description: IC SRAM 36MBIT PARALLEL 165FBGA |
на замовлення 675 шт: термін постачання 21-31 дні (днів) |
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TLE4906L | Infineon Technologies |
![]() Features: Temperature Compensated Packaging: Bulk Package / Case: 3-SSIP, SSO-3-02 Output Type: Open Collector Polarization: South Pole Mounting Type: Through Hole Function: Unipolar Switch Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 2.7V ~ 18V Technology: Hall Effect Sensing Range: 13.5mT Trip, 5mT Release Current - Output (Max): 20mA Current - Supply (Max): 6mA Supplier Device Package: PG-SSO-3-2 Test Condition: 25°C Part Status: Active |
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IAUZ40N06S5N050ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 29µA Supplier Device Package: PG-TSDSON-8-33 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUZ40N06S5N050ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 29µA Supplier Device Package: PG-TSDSON-8-33 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V |
на замовлення 9659 шт: термін постачання 21-31 дні (днів) |
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IPP040N06N3G | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
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IGW15T120 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Supplier Device Package: PG-TO247-3-21 Td (on/off) @ 25°C: 50ns/520ns Switching Energy: 1.3mJ (on), 1.4mJ (off) Test Condition: 600V, 15A, 56Ohm, 15V Gate Charge: 85 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 110 W |
на замовлення 7690 шт: термін постачання 21-31 дні (днів) |
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BTS442E2 | Infineon Technologies |
![]() ![]() Packaging: Bulk Features: Auto Restart, Status Flag Package / Case: TO-220-5 Formed Leads Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: Logic Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 15mOhm Input Type: Non-Inverting Voltage - Load: 4.5V ~ 42V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 21A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-5-11 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active |
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IKW75N60TXK | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
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IKW75N60H3 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 190 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/265ns Switching Energy: 3mJ (on), 1.7mJ (off) Test Condition: 400V, 75A, 5.2Ohm, 15V Gate Charge: 470 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 225 A Power - Max: 428 W |
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IKW75N60TA | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 121 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/330ns Switching Energy: 2mJ (on), 2.5mJ (off) Test Condition: 400V, 75A, 5Ohm, 15V Gate Charge: 470 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 225 A Power - Max: 428 W |
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XMC4104Q48K128AB | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 128KB (128K x 8) RAM Size: 20K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 9x12b SAR; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V Connectivity: I²C, LINbus, SPI, UART/USART Peripherals: DMA, I²S, LED, POR, PWM, WDT Supplier Device Package: 48-VQFN (7x7) Part Status: Active Number of I/O: 30 |
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XMC4100Q48K128BAXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 128KB (128K x 8) RAM Size: 20K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 9x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USB Peripherals: DMA, I²S, LED, POR, PWM, WDT Supplier Device Package: PG-VQFN-48-53 Part Status: Active Number of I/O: 21 DigiKey Programmable: Not Verified |
на замовлення 2100 шт: термін постачання 21-31 дні (днів) |
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XMC4108F64K64ABXQMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 64KB (64K x 8) RAM Size: 20K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 10x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB Peripherals: DMA, I2S, LED, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-19 Number of I/O: 35 DigiKey Programmable: Not Verified |
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IGW50N60H3 | Infineon Technologies |
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IKW50N60H3 | Infineon Technologies |
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KITXMCDPEXP01TOBO1 | Infineon Technologies |
![]() Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M0, Cortex®-M4F Board Type: Evaluation Platform Utilized IC / Part: XMC1300, XMC4200 Platform: XMC Digital Power Explorer Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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DEMO850W12VDC230VACTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Mounting Type: Fixed Type: MCU Contents: Board(s) Core Processor: ARM® Cortex®-M0 Board Type: Single Board Computers (SBC) Utilized IC / Part: XMC1300 Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IPD036N04LGATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V |
на замовлення 41162 шт: термін постачання 21-31 дні (днів) |
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BSZ028N04LSATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 63W (Tc) Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V |
на замовлення 16082 шт: термін постачання 21-31 дні (днів) |
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IKW50N65F5 | Infineon Technologies |
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IPW60R031CFD7 | Infineon Technologies |
Description: 600V COOLMOS N-CHANNEL POWER MOS Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.63mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V |
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PTMA210452FL V1 R250 | Infineon Technologies |
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BFP540ESDH6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21.5dB Power - Max: 250mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Supplier Device Package: PG-SOT343-3D Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BFP540ESDH6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21.5dB Power - Max: 250mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Supplier Device Package: PG-SOT343-3D Part Status: Active |
на замовлення 3687 шт: термін постачання 21-31 дні (днів) |
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BFP540FESDH6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 20dB Power - Max: 250mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Supplier Device Package: 4-TSFP Part Status: Active |
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BFP540FESDH6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 20dB Power - Max: 250mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Supplier Device Package: 4-TSFP Part Status: Active |
на замовлення 2445 шт: термін постачання 21-31 дні (днів) |
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TLE4983CHTNE6815HAMA1 | Infineon Technologies |
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на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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IGW30N60TP | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/179ns Switching Energy: 710µJ (on), 420µJ (off) Test Condition: 400V, 30A, 10.5Ohm, 15V Gate Charge: 130 nC Part Status: Active Current - Collector (Ic) (Max): 53 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 200 W |
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IGW30N60T | Infineon Technologies |
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TLF42772ELXUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-SSOP-14-EP Voltage - Output (Max): 12V Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Active PSRR: 65dB (100Hz) Voltage Dropout (Max): 0.5V @ 200mA Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit Current - Supply (Max): 11 mA Grade: Automotive Qualification: AEC-Q100 |
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TLF42772ELXUMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-SSOP-14-EP Voltage - Output (Max): 12V Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Active PSRR: 65dB (100Hz) Voltage Dropout (Max): 0.5V @ 200mA Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit Current - Supply (Max): 11 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4986 шт: термін постачання 21-31 дні (днів) |
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TLF4277ELXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Applications: Power Supply Monitor, Overvoltage Protection Supplier Device Package: PG-SSOP-14-EP DigiKey Programmable: Not Verified |
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IPD30N06S3L-20 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 17A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
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IAUZ30N06S5L140ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tj) Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TSDSON-8-32 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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IAUZ30N06S5L140ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tj) Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TSDSON-8-32 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V |
на замовлення 24394 шт: термін постачання 21-31 дні (днів) |
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IRG4PC20UPBF | Infineon Technologies |
![]() Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 21ns/86ns Switching Energy: 100µJ (on), 120µJ (off) Test Condition: 480V, 6.5A, 50Ohm, 15V Gate Charge: 27 nC Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 52 A Power - Max: 60 W |
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1EDI2002ASXUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 36-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Current - Output High, Low: 1A, 1A Voltage - Isolation: 3750Vrms Supplier Device Package: PG-DSO-36-63 Rise / Fall Time (Typ): 30ns, 60ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 13V ~ 18V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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SAK-C167CR-LM-ES-HA | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 144-BQFP Mounting Type: Surface Mount Speed: 25MHz RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 16x10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-144-8 Part Status: Active Number of I/O: 111 DigiKey Programmable: Not Verified |
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SAK-C167CRLMHAKXQLA1 | Infineon Technologies |
Description: LEGACY 16-BIT MCU Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
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SAK-C167CSL40MCAKXQLA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 144-BQFP Mounting Type: Surface Mount Speed: 40MHz RAM Size: 11K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 24x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-144-6 Part Status: Active Number of I/O: 111 DigiKey Programmable: Not Verified |
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SAK-C167CSL40MC | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 144-BQFP Mounting Type: Surface Mount Speed: 40MHz RAM Size: 11K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 24x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-144-6 Part Status: Active Number of I/O: 111 DigiKey Programmable: Not Verified |
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SAK-C164CM-4EF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 32KB (32K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: OTP Core Processor: C166 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-TQFP-64-4 Part Status: Active Number of I/O: 50 |
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SAKC164CI8E25MDB | Infineon Technologies |
![]() Packaging: Tray Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: OTP Core Processor: C166 Data Converters: A/D 8x10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Part Status: Active Number of I/O: 59 DigiKey Programmable: Not Verified |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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SAK-C164CI-8E25MDB | Infineon Technologies |
![]() Packaging: Tray Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: OTP Core Processor: C166 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 59 DigiKey Programmable: Not Verified |
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C164CI8EMCBKXQMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: OTP Core Processor: C166 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 59 DigiKey Programmable: Not Verified |
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IGW20N60H3 | Infineon Technologies |
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IKP20N60TA | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 41 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: PG-TO220-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/199ns Switching Energy: 310µJ (on), 460µJ (off) Test Condition: 400V, 20A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 156 W |
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IKW20N60TA | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 41 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/199ns Switching Energy: 310µJ (on), 460µJ (off) Test Condition: 400V, 20A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 166 W |
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ICE2QR0665G | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -25°C ~ 150°C (TJ) Duty Cycle: 50% Frequency - Switching: 52kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V Supplier Device Package: PG-DSO-12 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO Voltage - Start Up: 18 V Control Features: Soft Start Part Status: Active Power (Watts): 79 W |
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ICE2QR0665Z | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -25°C ~ 150°C (TJ) Duty Cycle: 50% Frequency - Switching: 52kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V Supplier Device Package: PG-DIP-7 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO Voltage - Start Up: 18 V Control Features: Soft Start Part Status: Active Power (Watts): 79 W |
товар відсутній |
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IRG4IBC30SPBF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Supplier Device Package: TO-220AB Full-Pak Td (on/off) @ 25°C: 22ns/540ns Switching Energy: 260µJ (on), 3.45mJ (off) Test Condition: 480V, 18A, 23Ohm, 15V Gate Charge: 50 nC Part Status: Obsolete Current - Collector (Ic) (Max): 23.5 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 47 A Power - Max: 45 W |
на замовлення 9651 шт: термін постачання 21-31 дні (днів) |
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IRG4IBC30WPBF-INF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Supplier Device Package: TO220 Full Pack Td (on/off) @ 25°C: 25ns/99ns Switching Energy: 130µJ (on), 130µJ (off) Test Condition: 480V, 12A, 23Ohm, 15V Gate Charge: 51 nC Part Status: Active Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 92 A Power - Max: 45 W |
на замовлення 844 шт: термін постачання 21-31 дні (днів) |
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IRG4IBC30KDPBF-INF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Supplier Device Package: TO220 Full Pack Td (on/off) @ 25°C: 60ns/160ns Switching Energy: 600µJ (on), 580µJ (off) Test Condition: 480V, 16A, 23Ohm, 15V Gate Charge: 100 nC Part Status: Active Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 34 A Power - Max: 45 W |
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IM240S6Z1BALMA1 | Infineon Technologies | Description: MODULE IGBT 600V 3A 23PWRSMD |
на замовлення 236 шт: термін постачання 21-31 дні (днів) |
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TLE4270-2D | Infineon Technologies |
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BAS16WE6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: PG-SOT323-3-1 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 26848 шт: термін постачання 21-31 дні (днів) |
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BAS16WH6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOT-323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 69000 шт: термін постачання 21-31 дні (днів) |
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EVALAUDIOI2SCOMTOBO1 | Infineon Technologies |
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на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BSC430N25NSFDATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 250V TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Description: MOSFET N-CH 250V TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
товар відсутній
SFH756 |
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Виробник: Infineon Technologies
Description: DIODE TRANSMITTER FIBER OPTIC
Packaging: Bulk
Wavelength: 660nm
Voltage - Forward (Vf) (Typ): 2.1V
Spectral Bandwidth: 25nm
Capacitance: 30 pF
Voltage - DC Reverse (Vr) (Max): 3 V
Current - DC Forward (If) (Max): 50 mA
Description: DIODE TRANSMITTER FIBER OPTIC
Packaging: Bulk
Wavelength: 660nm
Voltage - Forward (Vf) (Typ): 2.1V
Spectral Bandwidth: 25nm
Capacitance: 30 pF
Voltage - DC Reverse (Vr) (Max): 3 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 12444 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
96+ | 240.36 грн |
CY7C1460SV25-250BZC |
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Description: IC SRAM 36MBIT PARALLEL 165FBGA
на замовлення 675 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 3692.24 грн |
TLE4906L |
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Виробник: Infineon Technologies
Description: TLE4906 - HALL SWITCH
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
Description: TLE4906 - HALL SWITCH
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
товар відсутній
IAUZ40N06S5N050ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 37.06 грн |
IAUZ40N06S5N050ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
на замовлення 9659 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 93.85 грн |
10+ | 74.14 грн |
100+ | 57.65 грн |
500+ | 45.86 грн |
1000+ | 37.36 грн |
2000+ | 35.17 грн |
IPP040N06N3G |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
товар відсутній
IGW15T120 |
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Виробник: Infineon Technologies
Description: IGW15T120 - DISCRETE IGBT WITHOU
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-21
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 1.3mJ (on), 1.4mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
Description: IGW15T120 - DISCRETE IGBT WITHOU
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-21
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 1.3mJ (on), 1.4mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
на замовлення 7690 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
136+ | 154.44 грн |
BTS442E2 | ![]() |
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Виробник: Infineon Technologies
Description: BTS442 - PROFET - SMART HIGH SID
Packaging: Bulk
Features: Auto Restart, Status Flag
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-5-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Description: BTS442 - PROFET - SMART HIGH SID
Packaging: Bulk
Features: Auto Restart, Status Flag
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-5-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
товар відсутній
IKW75N60TXK |
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Виробник: Infineon Technologies
Description: IKW75N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Part Status: Active
Description: IKW75N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Part Status: Active
товар відсутній
IKW75N60H3 |
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Виробник: Infineon Technologies
Description: IKW75N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 190 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/265ns
Switching Energy: 3mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 5.2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
Description: IKW75N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 190 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/265ns
Switching Energy: 3mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 5.2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
товар відсутній
IKW75N60TA |
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Виробник: Infineon Technologies
Description: IKW75N60 - AUTOMOTIVE IGBT DISCR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 2mJ (on), 2.5mJ (off)
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
Description: IKW75N60 - AUTOMOTIVE IGBT DISCR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 2mJ (on), 2.5mJ (off)
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
товар відсутній
XMC4104Q48K128AB |
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Виробник: Infineon Technologies
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: 48-VQFN (7x7)
Part Status: Active
Number of I/O: 30
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: 48-VQFN (7x7)
Part Status: Active
Number of I/O: 30
товар відсутній
XMC4100Q48K128BAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-53
Part Status: Active
Number of I/O: 21
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-53
Part Status: Active
Number of I/O: 21
DigiKey Programmable: Not Verified
на замовлення 2100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 612.72 грн |
10+ | 533.31 грн |
25+ | 508.5 грн |
100+ | 414.36 грн |
250+ | 395.74 грн |
500+ | 360.82 грн |
1000+ | 309.11 грн |
XMC4108F64K64ABXQMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Number of I/O: 35
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Number of I/O: 35
DigiKey Programmable: Not Verified
товар відсутній
IGW50N60H3 |
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Виробник: Infineon Technologies
Description: IGW50N60 - DISCRETE IGBT WITHOUT
Description: IGW50N60 - DISCRETE IGBT WITHOUT
товар відсутній
IKW50N60H3 |
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Виробник: Infineon Technologies
Description: IKW50N60 - DISCRETE IGBT WITH AN
Description: IKW50N60 - DISCRETE IGBT WITH AN
товар відсутній
KITXMCDPEXP01TOBO1 |
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Виробник: Infineon Technologies
Description: XMC DIGITAL POWER EXPLORER KIT
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0, Cortex®-M4F
Board Type: Evaluation Platform
Utilized IC / Part: XMC1300, XMC4200
Platform: XMC Digital Power Explorer
Part Status: Active
Description: XMC DIGITAL POWER EXPLORER KIT
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0, Cortex®-M4F
Board Type: Evaluation Platform
Utilized IC / Part: XMC1300, XMC4200
Platform: XMC Digital Power Explorer
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 9222.91 грн |
DEMO850W12VDC230VACTOBO1 |
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Виробник: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
Mounting Type: Fixed
Type: MCU
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Board Type: Single Board Computers (SBC)
Utilized IC / Part: XMC1300
Part Status: Active
Description: DEV KIT
Packaging: Bulk
Mounting Type: Fixed
Type: MCU
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Board Type: Single Board Computers (SBC)
Utilized IC / Part: XMC1300
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 21507.14 грн |
IPD036N04LGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V
Description: MOSFET N-CH 40V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V
на замовлення 41162 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 70.96 грн |
10+ | 55.62 грн |
100+ | 43.3 грн |
500+ | 34.44 грн |
1000+ | 34.07 грн |
BSZ028N04LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 21A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Description: MOSFET N-CH 40V 21A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
на замовлення 16082 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 86.22 грн |
10+ | 67.75 грн |
100+ | 52.68 грн |
500+ | 41.91 грн |
1000+ | 34.14 грн |
2000+ | 32.14 грн |
IKW50N65F5 |
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Виробник: Infineon Technologies
Description: IGBT 650V 80A 305W PG-TO247-3
Description: IGBT 650V 80A 305W PG-TO247-3
товар відсутній
IPW60R031CFD7 |
Виробник: Infineon Technologies
Description: 600V COOLMOS N-CHANNEL POWER MOS
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
Description: 600V COOLMOS N-CHANNEL POWER MOS
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
товар відсутній
PTMA210452FL V1 R250 |
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Виробник: Infineon Technologies
Description: IC AMP W-CDMA 1.9-2.2GHZ H34265
Description: IC AMP W-CDMA 1.9-2.2GHZ H34265
товар відсутній
BFP540ESDH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Description: RF TRANS NPN 5V 30GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 15.6 грн |
BFP540ESDH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Description: RF TRANS NPN 5V 30GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 3687 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 40.44 грн |
10+ | 34.17 грн |
25+ | 32.12 грн |
100+ | 24.6 грн |
250+ | 22.85 грн |
500+ | 19.45 грн |
1000+ | 15.3 грн |
BFP540FESDH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ 4TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Description: RF TRANS NPN 5V 30GHZ 4TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
товар відсутній
BFP540FESDH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ 4TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Description: RF TRANS NPN 5V 30GHZ 4TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
на замовлення 2445 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 45.78 грн |
10+ | 37.69 грн |
25+ | 35.18 грн |
100+ | 26.42 грн |
250+ | 24.53 грн |
500+ | 20.76 грн |
1000+ | 15.78 грн |
TLE4983CHTNE6815HAMA1 |
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на замовлення 13500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
95+ | 222.07 грн |
IGW30N60TP |
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Виробник: Infineon Technologies
Description: IGW30N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
Description: IGW30N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
товар відсутній
IGW30N60T |
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Виробник: Infineon Technologies
Description: IGW30N60 - DISCRETE IGBT WITHOUT
Description: IGW30N60 - DISCRETE IGBT WITHOUT
товар відсутній
TLF42772ELXUMA2 |
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Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 300MA SSOP-14
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 11 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 300MA SSOP-14
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 11 mA
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLF42772ELXUMA2 |
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Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 300MA SSOP-14
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 11 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 300MA SSOP-14
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 11 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4986 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 191.52 грн |
10+ | 165.55 грн |
25+ | 156.16 грн |
100+ | 124.86 грн |
250+ | 117.24 грн |
500+ | 102.58 грн |
1000+ | 83.61 грн |
TLF4277ELXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SPLY MONITR/OVRVLT 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Applications: Power Supply Monitor, Overvoltage Protection
Supplier Device Package: PG-SSOP-14-EP
DigiKey Programmable: Not Verified
Description: IC PWR SPLY MONITR/OVRVLT 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Applications: Power Supply Monitor, Overvoltage Protection
Supplier Device Package: PG-SSOP-14-EP
DigiKey Programmable: Not Verified
товар відсутній
IPD30N06S3L-20 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 17A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 17A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
товар відсутній
IAUZ30N06S5L140ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 23.44 грн |
10000+ | 21.53 грн |
IAUZ30N06S5L140ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
на замовлення 24394 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 59.52 грн |
10+ | 46.88 грн |
100+ | 36.47 грн |
500+ | 29 грн |
1000+ | 23.63 грн |
2000+ | 22.24 грн |
IRG4PC20UPBF |
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Виробник: Infineon Technologies
Description: IGBT 600V 13A 60W TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 21ns/86ns
Switching Energy: 100µJ (on), 120µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
Description: IGBT 600V 13A 60W TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 21ns/86ns
Switching Energy: 100µJ (on), 120µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
товар відсутній
1EDI2002ASXUMA2 |
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Виробник: Infineon Technologies
Description: DGT ISO 3.75KV 1CH GT DVR DSO36
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 3750Vrms
Supplier Device Package: PG-DSO-36-63
Rise / Fall Time (Typ): 30ns, 60ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
Grade: Automotive
Qualification: AEC-Q100
Description: DGT ISO 3.75KV 1CH GT DVR DSO36
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 3750Vrms
Supplier Device Package: PG-DSO-36-63
Rise / Fall Time (Typ): 30ns, 60ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 430.59 грн |
SAK-C167CR-LM-ES-HA |
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Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 16x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Part Status: Active
Number of I/O: 111
DigiKey Programmable: Not Verified
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 16x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Part Status: Active
Number of I/O: 111
DigiKey Programmable: Not Verified
товар відсутній
SAK-C167CRLMHAKXQLA1 |
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
SAK-C167CSL40MCAKXQLA1 |
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Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-6
Part Status: Active
Number of I/O: 111
DigiKey Programmable: Not Verified
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-6
Part Status: Active
Number of I/O: 111
DigiKey Programmable: Not Verified
товар відсутній
SAK-C167CSL40MC |
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Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-6
Part Status: Active
Number of I/O: 111
DigiKey Programmable: Not Verified
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-6
Part Status: Active
Number of I/O: 111
DigiKey Programmable: Not Verified
товар відсутній
SAK-C164CM-4EF |
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Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-TQFP-64-4
Part Status: Active
Number of I/O: 50
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-TQFP-64-4
Part Status: Active
Number of I/O: 50
товар відсутній
SAKC164CI8E25MDB |
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Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Tray
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: LEGACY 16-BIT MCU
Packaging: Tray
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
на замовлення 42 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 1554.59 грн |
SAK-C164CI-8E25MDB |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tray
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tray
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
товар відсутній
C164CI8EMCBKXQMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tray
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tray
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
товар відсутній
IGW20N60H3 |
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Виробник: Infineon Technologies
Description: IGW20N60 - DISCRETE IGBT WITHOUT
Description: IGW20N60 - DISCRETE IGBT WITHOUT
товар відсутній
IKP20N60TA |
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Виробник: Infineon Technologies
Description: IKP20N60 - AUTOMOTIVE IGBT DISCR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
Description: IKP20N60 - AUTOMOTIVE IGBT DISCR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
товар відсутній
IKW20N60TA |
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Виробник: Infineon Technologies
Description: IKW20N60 - AUTOMOTIVE IGBT DISCR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 166 W
Description: IKW20N60 - AUTOMOTIVE IGBT DISCR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 166 W
товар відсутній
ICE2QR0665G |
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Виробник: Infineon Technologies
Description: ICE2QR0665 - QUASI RESONANT COOL
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 79 W
Description: ICE2QR0665 - QUASI RESONANT COOL
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 79 W
товар відсутній
ICE2QR0665Z |
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Виробник: Infineon Technologies
Description: ICE2QR0665 - QUASI RESONANT COOL
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 79 W
Description: ICE2QR0665 - QUASI RESONANT COOL
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 79 W
товар відсутній
IRG4IBC30SPBF |
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Виробник: Infineon Technologies
Description: IGBT 600V 23.5A 45W TO220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 23.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 47 A
Power - Max: 45 W
Description: IGBT 600V 23.5A 45W TO220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 23.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 47 A
Power - Max: 45 W
на замовлення 9651 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
210+ | 101.46 грн |
IRG4IBC30WPBF-INF |
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Виробник: Infineon Technologies
Description: COPACK IGBT W/ULTRAFAST SOFT REC
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO220 Full Pack
Td (on/off) @ 25°C: 25ns/99ns
Switching Energy: 130µJ (on), 130µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 45 W
Description: COPACK IGBT W/ULTRAFAST SOFT REC
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO220 Full Pack
Td (on/off) @ 25°C: 25ns/99ns
Switching Energy: 130µJ (on), 130µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 45 W
на замовлення 844 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
177+ | 129.72 грн |
IRG4IBC30KDPBF-INF |
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Виробник: Infineon Technologies
Description: COPACK IGBT W/ULTRAFAST SOFT REC
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO220 Full Pack
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 45 W
Description: COPACK IGBT W/ULTRAFAST SOFT REC
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO220 Full Pack
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 45 W
товар відсутній
IM240S6Z1BALMA1 |
Виробник: Infineon Technologies
Description: MODULE IGBT 600V 3A 23PWRSMD
Description: MODULE IGBT 600V 3A 23PWRSMD
на замовлення 236 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 705.05 грн |
10+ | 613.25 грн |
25+ | 584.68 грн |
100+ | 476.43 грн |
BAS16WE6327 |
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Виробник: Infineon Technologies
Description: DIODE GP 80V 250MA SOT323-3-1
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT323-3-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE GP 80V 250MA SOT323-3-1
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT323-3-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 26848 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13172+ | 1.42 грн |
BAS16WH6327 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE GEN PURP 80V 250MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7397+ | 2.78 грн |
EVALAUDIOI2SCOMTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL AUDIO MA12040P
Description: EVAL AUDIO MA12040P
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2854.55 грн |