Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5730) > Сторінка 11 з 96
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| KBPM206G | GeneSiC Semiconductor |
 Description: DIODE BRIDGE 600V 2A KBPM |
товару немає в наявності |
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| KBPM208G | GeneSiC Semiconductor |
Description: DIODE BRIDGE 800V 2A KBPM |
товару немає в наявності |
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| KBPM210G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM |
товару немає в наявності |
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| KBPM3005G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 3A KBPM Packaging: Bulk Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Part Status: Obsolete Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
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| KBPM301G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 3A KBPM Packaging: Bulk Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Part Status: Obsolete Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
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| KBPM302G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 3A KBPM Packaging: Bulk Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Part Status: Obsolete Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
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| KBPM304G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 3A KBPM Packaging: Bulk Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Part Status: Obsolete Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
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| KBPM306G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 3A KBPM Packaging: Bulk Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
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| KBPM308G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 3A KBPM Packaging: Bulk Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
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| KBPM310G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 3A KBPM Packaging: Bulk Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Part Status: Obsolete Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
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| KBU10005 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 10A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
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| KBU1001 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 10A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
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| KBU1002 | GeneSiC Semiconductor |
 Description: BRIDGE RECT 1PHASE 200V 10A KBUPackaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
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| KBU1004 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 10A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
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| KBU1006 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 10A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 3987 шт: термін постачання 21-31 дні (днів) |
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| KBU1008 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 10A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
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KBU6A | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 6A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
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KBU6B | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 6A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 2166 шт: термін постачання 21-31 дні (днів) |
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KBU6D | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 6A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 5951 шт: термін постачання 21-31 дні (днів) |
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KBU6G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 6A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
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KBU6J | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 6A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 5968 шт: термін постачання 21-31 дні (днів) |
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KBU6K | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 6A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
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KBU6M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 6A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 4482 шт: термін постачання 21-31 дні (днів) |
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KBU8A | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 8A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Obsolete Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
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KBU8B | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 8A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 3094 шт: термін постачання 21-31 дні (днів) |
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KBU8D | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 8A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
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KBU8G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 8A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 4690 шт: термін постачання 21-31 дні (днів) |
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KBU8J | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 8A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 5048 шт: термін постачання 21-31 дні (днів) |
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KBU8K | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 8A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 5616 шт: термін постачання 21-31 дні (днів) |
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KBU8M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 8A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 5023 шт: термін постачання 21-31 дні (днів) |
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| M3P100A-100 | GeneSiC Semiconductor |
Description: DIODE STD REC 1000V 100A 3PH |
товару немає в наявності |
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| M3P100A-120 | GeneSiC Semiconductor |
Description: DIODE STD REC 1200V 100A 3PH |
товару немає в наявності |
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| M3P100A-140 | GeneSiC Semiconductor |
Description: DIODE STD REC 1400V 100A 3PH |
товару немає в наявності |
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| M3P100A-160 | GeneSiC Semiconductor |
Description: DIODE STD REC 1600V 100A 3PH |
товару немає в наявності |
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| M3P100A-60 | GeneSiC Semiconductor |
Description: DIODE STD REC 600V 100A 3PH |
товару немає в наявності |
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| M3P100A-80 | GeneSiC Semiconductor |
Description: DIODE STD REC 800V 100A 3PH |
товару немає в наявності |
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M3P75A-100 | GeneSiC Semiconductor |
Description: DIODE STD REC 1000V 75A 3PH |
товару немає в наявності |
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M3P75A-120 | GeneSiC Semiconductor |
Description: DIODE STD REC 1200V 75A 3PH |
товару немає в наявності |
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M3P75A-140 | GeneSiC Semiconductor |
Description: DIODE STD REC 1400V 75A 3PH |
товару немає в наявності |
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M3P75A-160 | GeneSiC Semiconductor |
Description: DIODE STD REC 1600V 75A 3PH |
товару немає в наявності |
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M3P75A-60 | GeneSiC Semiconductor |
Description: DIODE STD REC 600V 75A 3PH |
товару немає в наявності |
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M3P75A-80 | GeneSiC Semiconductor |
Description: DIODE STD REC 800V 75A 3PH |
товару немає в наявності |
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MBR120100CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 60 Voltage Coupled to Current - Reverse Leakage @ Vr: 20 Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
товару немає в наявності |
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MBR120100CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
товару немає в наявності |
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| MBR12035CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
товару немає в наявності |
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| MBR12080CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 80V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
товару немає в наявності |
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| MBR12080CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 80V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 60 Voltage Coupled to Current - Reverse Leakage @ Vr: 20 Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
товару немає в наявності |
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| MBR200100CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
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| MBR200100CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
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| MBR20020CT | GeneSiC Semiconductor |
Description: DIODE MODULE 20V 200A 2TOWER |
товару немає в наявності |
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| MBR20020CTR | GeneSiC Semiconductor |
Description: DIODE MODULE 20V 200A 2TOWER |
товару немає в наявності |
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| MBR20035CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
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| MBR20035CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
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| MBR20040CT | GeneSiC Semiconductor |
Description: DIODE MODULE 40V 200A 2TOWER |
товару немає в наявності |
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| MBR20040CTR | GeneSiC Semiconductor |
Description: DIODE MODULE 40V 200A 2TOWER |
товару немає в наявності |
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| MBR20045CT | GeneSiC Semiconductor |
Description: DIODE MODULE 45V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
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| MBR20045CTR | GeneSiC Semiconductor |
Description: DIODE MODULE 45V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
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| MBR20060CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 60V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
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| MBR20060CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 60V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
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| MBR20080CT | GeneSiC Semiconductor |
Description: DIODE MODULE 80V 200A 2TOWER |
товару немає в наявності |
| KBPM206G |
|
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 2A KBPM
Description: DIODE BRIDGE 600V 2A KBPM
товару немає в наявності
| KBPM208G |
|
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 800V 2A KBPM
Description: DIODE BRIDGE 800V 2A KBPM
товару немає в наявності
| KBPM210G |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
товару немає в наявності
| KBPM3005G |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
| KBPM301G |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 100V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
| KBPM302G |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 200V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
| KBPM304G |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 400V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
| KBPM306G |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 600V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
| KBPM308G |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 800V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
| KBPM310G |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 1KV 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
| KBU10005 |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
| KBU1001 |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
| KBU1002 | |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
| KBU1004 |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
| KBU1006 |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 3987 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.05 грн |
| 10+ | 96.03 грн |
| 25+ | 85.96 грн |
| 100+ | 68.16 грн |
| 250+ | 60.99 грн |
| 500+ | 56.04 грн |
| 1000+ | 50.68 грн |
| 2500+ | 45.39 грн |
| KBU1008 |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
| KBU6A |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
| KBU6B |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 100V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 2166 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.53 грн |
| 10+ | 86.35 грн |
| 25+ | 76.74 грн |
| 100+ | 60.19 грн |
| 250+ | 53.51 грн |
| 500+ | 48.93 грн |
| 1000+ | 43.99 грн |
| KBU6D |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 5951 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.53 грн |
| 10+ | 86.35 грн |
| 25+ | 76.74 грн |
| 100+ | 60.19 грн |
| 250+ | 53.51 грн |
| 500+ | 48.93 грн |
| 1000+ | 43.99 грн |
| 2500+ | 39.06 грн |
| KBU6G |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 400V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
| KBU6J |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 600V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 5968 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.53 грн |
| 10+ | 86.35 грн |
| 25+ | 76.74 грн |
| 100+ | 60.19 грн |
| 250+ | 53.51 грн |
| 500+ | 48.93 грн |
| 1000+ | 43.99 грн |
| 2500+ | 39.06 грн |
| KBU6K |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
| KBU6M |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 4482 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.53 грн |
| 10+ | 86.35 грн |
| 25+ | 76.74 грн |
| 100+ | 60.19 грн |
| 250+ | 53.51 грн |
| 500+ | 48.93 грн |
| 1000+ | 43.99 грн |
| 2500+ | 39.06 грн |
| KBU8A |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
| KBU8B |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 3094 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.14 грн |
| 10+ | 90.27 грн |
| 25+ | 80.35 грн |
| 100+ | 63.32 грн |
| 250+ | 56.4 грн |
| 500+ | 51.72 грн |
| 1000+ | 46.58 грн |
| 2500+ | 41.5 грн |
| KBU8D |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
| KBU8G |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 4690 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.14 грн |
| 10+ | 90.27 грн |
| 25+ | 80.35 грн |
| 100+ | 63.32 грн |
| 250+ | 56.4 грн |
| 500+ | 51.72 грн |
| 1000+ | 46.58 грн |
| 2500+ | 41.5 грн |
| KBU8J |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 5048 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.14 грн |
| 10+ | 90.27 грн |
| 25+ | 80.35 грн |
| 100+ | 63.32 грн |
| 250+ | 56.4 грн |
| 500+ | 51.72 грн |
| 1000+ | 46.58 грн |
| 2500+ | 41.5 грн |
| KBU8K |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 5616 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.14 грн |
| 10+ | 90.27 грн |
| 25+ | 80.35 грн |
| 100+ | 63.32 грн |
| 250+ | 56.4 грн |
| 500+ | 51.72 грн |
| 1000+ | 46.58 грн |
| 2500+ | 41.5 грн |
| KBU8M |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 5023 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.44 грн |
| 10+ | 91.82 грн |
| 25+ | 81.76 грн |
| 100+ | 64.44 грн |
| 250+ | 57.4 грн |
| 500+ | 52.64 грн |
| 1000+ | 47.41 грн |
| 2500+ | 42.24 грн |
| M3P100A-100 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 1000V 100A 3PH
Description: DIODE STD REC 1000V 100A 3PH
товару немає в наявності
| M3P100A-120 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 1200V 100A 3PH
Description: DIODE STD REC 1200V 100A 3PH
товару немає в наявності
| M3P100A-140 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 1400V 100A 3PH
Description: DIODE STD REC 1400V 100A 3PH
товару немає в наявності
| M3P100A-160 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 1600V 100A 3PH
Description: DIODE STD REC 1600V 100A 3PH
товару немає в наявності
| M3P100A-60 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 600V 100A 3PH
Description: DIODE STD REC 600V 100A 3PH
товару немає в наявності
| M3P100A-80 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 800V 100A 3PH
Description: DIODE STD REC 800V 100A 3PH
товару немає в наявності
| M3P75A-100 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 1000V 75A 3PH
Description: DIODE STD REC 1000V 75A 3PH
товару немає в наявності
| M3P75A-120 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 1200V 75A 3PH
Description: DIODE STD REC 1200V 75A 3PH
товару немає в наявності
| M3P75A-140 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 1400V 75A 3PH
Description: DIODE STD REC 1400V 75A 3PH
товару немає в наявності
| M3P75A-160 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 1600V 75A 3PH
Description: DIODE STD REC 1600V 75A 3PH
товару немає в наявності
| M3P75A-60 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 600V 75A 3PH
Description: DIODE STD REC 600V 75A 3PH
товару немає в наявності
| M3P75A-80 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 800V 75A 3PH
Description: DIODE STD REC 800V 75A 3PH
товару немає в наявності
| MBR120100CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 60
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOT 100V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 60
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
| MBR120100CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOT 100V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
| MBR12035CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
| MBR12080CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOTT 80V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
| MBR12080CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 60
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOTT 80V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 60
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
| MBR200100CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
| MBR200100CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
| MBR20020CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 20V 200A 2TOWER
Description: DIODE MODULE 20V 200A 2TOWER
товару немає в наявності
| MBR20020CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 20V 200A 2TOWER
Description: DIODE MODULE 20V 200A 2TOWER
товару немає в наявності
| MBR20035CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
| MBR20035CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
| MBR20040CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 40V 200A 2TOWER
Description: DIODE MODULE 40V 200A 2TOWER
товару немає в наявності
| MBR20040CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 40V 200A 2TOWER
Description: DIODE MODULE 40V 200A 2TOWER
товару немає в наявності
| MBR20045CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MODULE 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
| MBR20045CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MODULE 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
| MBR20060CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
| MBR20060CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
| MBR20080CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 80V 200A 2TOWER
Description: DIODE MODULE 80V 200A 2TOWER
товару немає в наявності