Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5702) > Сторінка 14 з 96
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MBRH12030 | GeneSiC Semiconductor |
 Description: DIODE SCHOTTKY 30V 120A D-67Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 20 V |
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MBRH12030R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 30V 120A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 20 V |
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MBRH12035 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 120A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 20 V |
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MBRH12035R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 35V 120A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 20 V |
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MBRH12045 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 120A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 20 V |
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MBRH12045R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 45V 120A D-67 Packaging: Bulk Package / Case: D-67 HALF-PAK Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
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MBRH12060 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 60V 120A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 20 V |
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MBRH12060R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 60V 120A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 20 V |
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MBRH12080 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 80V 120A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 20 V |
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MBRH12080R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 80V 120A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 20 V |
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MBRH200100 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 100V 200A D-67 |
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MBRH200100R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 100V 200A D-67 |
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MBRH20020 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 200A D-67 |
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MBRH20020R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 200A D-67 |
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MBRH20030 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 200A D-67 |
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MBRH20030R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 200A D-67 |
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MBRH20035 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 200A D-67 |
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MBRH20035R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 200A D-67 |
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MBRH20040 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 200A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 200A Supplier Device Package: D-67 Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
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MBRH20040R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 40V 200A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 200A Supplier Device Package: D-67 Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
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MBRH20060 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 60V 200A D-67 |
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MBRH20060R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 60V 200A D-67 |
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MBRH20080 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 80V 200A D-67 |
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MBRH20080R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 80V 200A D-67 |
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MBRT120100 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 100V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT120100R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 100V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT12020 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 20V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT12020R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 20V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT12030 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 30V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT12030R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 30V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT12035 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT12035R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT12040 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 40V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT12040R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 40V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT12045 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 45V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT12045R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 45V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT12060 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 60V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT12060R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 60V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT12080 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 80V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT12080R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 80V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT200100R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT20020 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 20V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT20020R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 20V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT20030 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 30V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT20030R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 30V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT20045 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 45V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT20045R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 45V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT20060 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 60V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT20060R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 60V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
на замовлення 89 шт: термін постачання 21-31 дні (днів) |
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MBRT20080 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 80V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT20080R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 80V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT300100 | GeneSiC Semiconductor |
Description: DIODE MODULE 100V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 150 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT300100R | GeneSiC Semiconductor |
Description: DIODE MODULE 100V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 150 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT30020 | GeneSiC Semiconductor |
Description: DIODE MODULE 20V 300A 3TOWER |
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MBRT30020R | GeneSiC Semiconductor |
Description: DIODE MODULE 20V 300A 3TOWER |
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MBRT30030 | GeneSiC Semiconductor |
Description: DIODE MODULE 30V 300A 3TOWER |
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MBRT30030R | GeneSiC Semiconductor |
Description: DIODE MODULE 30V 300A 3TOWER |
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MBRT30060 | GeneSiC Semiconductor |
Description: DIODE MODULE 60V 300A 3TOWER |
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MBRT30060R | GeneSiC Semiconductor |
Description: DIODE MODULE 60V 300A 3TOWER |
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MBRT30080 | GeneSiC Semiconductor |
Description: DIODE MODULE 80V 300A 3TOWER |
товар відсутній |
| MBRH12030 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
Description: DIODE SCHOTTKY 30V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товар відсутній
| MBRH12030R |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
Description: DIODE SCHOTTKY REV 30V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товар відсутній
| MBRH12035 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
Description: DIODE SCHOTTKY 35V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товар відсутній
| MBRH12035R |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 35V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
Description: DIODE SCHOTTKY REV 35V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товар відсутній
| MBRH12045 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
Description: DIODE SCHOTTKY 45V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товар відсутній
| MBRH12045R |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 45V 120A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE SCHOTTKY REV 45V 120A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
товар відсутній
| MBRH12060 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
Description: DIODE SCHOTTKY 60V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товар відсутній
| MBRH12060R |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 60V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
Description: DIODE SCHOTTKY REV 60V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товар відсутній
| MBRH12080 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
Description: DIODE SCHOTTKY 80V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товар відсутній
| MBRH12080R |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 80V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
Description: DIODE SCHOTTKY REV 80V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товар відсутній
| MBRH200100 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 200A D-67
Description: DIODE SCHOTTKY 100V 200A D-67
товар відсутній
| MBRH200100R |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 200A D-67
Description: DIODE SCHOTTKY 100V 200A D-67
товар відсутній
| MBRH20040 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY 40V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
| MBRH20040R |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY REV 40V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
| MBRT120100 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT120100R |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT12020 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT12020R |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT12030 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 30V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT12030R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 30V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT12035 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT12035R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT12040 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 40V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT12040R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 40V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT12045 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 45V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT12045R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 45V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT12060 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 60V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT12060R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 60V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT12080 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 80V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT12080R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 80V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT200100R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOT 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT20020 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT20020R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT20030 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 30V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT20030R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 30V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT20045 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 45V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT20045R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 45V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT20060 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 60V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT20060R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 60V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 89 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7161.29 грн |
| MBRT20080 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 80V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT20080R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 80V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT300100 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MODULE 100V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
| MBRT300100R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MODULE 100V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній