Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5702) > Сторінка 15 з 96
Фото | Назва | Виробник | Інформація |
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MBRT30080R | GeneSiC Semiconductor |
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MBRT40020 | GeneSiC Semiconductor |
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MBRT40020R | GeneSiC Semiconductor |
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MBRT40030 | GeneSiC Semiconductor |
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MBRT40030R | GeneSiC Semiconductor |
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MBRT40040 | GeneSiC Semiconductor |
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MBRT40040R | GeneSiC Semiconductor |
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MBRT40060 | GeneSiC Semiconductor |
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MBRT40060R | GeneSiC Semiconductor |
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MBRT500100 | GeneSiC Semiconductor |
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MBRT500100R | GeneSiC Semiconductor |
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MBRT50020 | GeneSiC Semiconductor |
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MBRT50020R | GeneSiC Semiconductor |
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MBRT50030 | GeneSiC Semiconductor |
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MBRT50030R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT50035 | GeneSiC Semiconductor |
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MBRT50035R | GeneSiC Semiconductor |
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MBRT50040 | GeneSiC Semiconductor |
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MBRT50040R | GeneSiC Semiconductor |
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MBRT50045 | GeneSiC Semiconductor |
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MBRT50045R | GeneSiC Semiconductor |
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MBRT50060 | GeneSiC Semiconductor |
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MBRT50060R | GeneSiC Semiconductor |
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MBRT50080 | GeneSiC Semiconductor |
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MBRT50080R | GeneSiC Semiconductor |
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MBRT600100 | GeneSiC Semiconductor |
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MBRT600100R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT60020 | GeneSiC Semiconductor |
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MBRT60020R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT60030 | GeneSiC Semiconductor |
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MBRT60030R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT60035 | GeneSiC Semiconductor |
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MBRT60035R | GeneSiC Semiconductor |
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MBRT60040 | GeneSiC Semiconductor |
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MBRT60040R | GeneSiC Semiconductor |
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MBRT60045 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT60045R | GeneSiC Semiconductor |
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MBRT60060 | GeneSiC Semiconductor |
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MBRT60060R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT60080 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT60080R | GeneSiC Semiconductor |
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товар відсутній |
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MSRT150100(A) | GeneSiC Semiconductor |
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MSRT150120(A) | GeneSiC Semiconductor |
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MSRT150140(A) | GeneSiC Semiconductor |
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MSRT150160(A) | GeneSiC Semiconductor |
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MSRT15060(A) | GeneSiC Semiconductor | Description: DIODE MODULE 600V 150A 3TOWER |
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MSRT15080(A) | GeneSiC Semiconductor |
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MSRT200100(A) | GeneSiC Semiconductor |
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MSRT200120(A) | GeneSiC Semiconductor |
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товар відсутній |
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MSRT200140(A) | GeneSiC Semiconductor |
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MSRT200160(A) | GeneSiC Semiconductor |
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MSRT20060(A) | GeneSiC Semiconductor |
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MSRT20080(A) | GeneSiC Semiconductor |
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товар відсутній |
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MSRT250100(A) | GeneSiC Semiconductor |
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MSRT250120(A) | GeneSiC Semiconductor |
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MSRT250140(A) | GeneSiC Semiconductor |
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MSRT250160(A) | GeneSiC Semiconductor |
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товар відсутній |
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MSRT25060(A) | GeneSiC Semiconductor | Description: DIODE MODULE 600V 250A 3TOWER |
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MSRT25080(A) | GeneSiC Semiconductor |
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товар відсутній |
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MSRTA300100(A)D | GeneSiC Semiconductor |
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товар відсутній |
MBRT500100 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 500A 3TOWER
Description: DIODE MODULE 100V 500A 3TOWER
товар відсутній
MBRT500100R |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 500A 3TOWER
Description: DIODE MODULE 100V 500A 3TOWER
товар відсутній
MBRT50030R |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 30V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
MBRT600100 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 600A 3TOWER
Description: DIODE MODULE 100V 600A 3TOWER
товар відсутній
MBRT600100R |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MODULE 100V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
MBRT60020R |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 20V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MODULE 20V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
MBRT60030R |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 30V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MODULE 30V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
MBRT60045 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MODULE 45V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
MBRT60060R |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 60V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MODULE 60V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
MBRT60080 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 80V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MODULE 80V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
MSRT150100(A) |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1KV 150A 3TOWER
Description: DIODE MODULE 1KV 150A 3TOWER
товар відсутній
MSRT150120(A) |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1.2KV 150A 3TOWER
Description: DIODE MODULE 1.2KV 150A 3TOWER
товар відсутній
MSRT150140(A) |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1.4KV 150A 3TOWER
Description: DIODE MODULE 1.4KV 150A 3TOWER
товар відсутній
MSRT150160(A) |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1.6KV 150A 3TOWER
Description: DIODE MODULE 1.6KV 150A 3TOWER
товар відсутній
MSRT15060(A) |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 600V 150A 3TOWER
Description: DIODE MODULE 600V 150A 3TOWER
товар відсутній
MSRT15080(A) |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 800V 150A 3TOWER
Description: DIODE MODULE 800V 150A 3TOWER
товар відсутній
MSRT200100(A) |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1KV 200A 3TOWER
Description: DIODE MODULE 1KV 200A 3TOWER
товар відсутній
MSRT200120(A) |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1.2KV 200A 3TOWER
Description: DIODE MODULE 1.2KV 200A 3TOWER
товар відсутній
MSRT200140(A) |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1.4KV 200A 3TOWER
Description: DIODE MODULE 1.4KV 200A 3TOWER
товар відсутній
MSRT200160(A) |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1.6KV 200A 3TOWER
Description: DIODE MODULE 1.6KV 200A 3TOWER
товар відсутній
MSRT20060(A) |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 600V 200A 3TOWER
Description: DIODE MODULE 600V 200A 3TOWER
товар відсутній
MSRT20080(A) |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 800V 200A 3TOWER
Description: DIODE MODULE 800V 200A 3TOWER
товар відсутній
MSRT250100(A) |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1KV 250A 3TOWER
Description: DIODE MODULE 1KV 250A 3TOWER
товар відсутній
MSRT250120(A) |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1.2KV 250A 3TOWER
Description: DIODE MODULE 1.2KV 250A 3TOWER
товар відсутній
MSRT250140(A) |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1.4KV 250A 3TOWER
Description: DIODE MODULE 1.4KV 250A 3TOWER
товар відсутній
MSRT250160(A) |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1.6KV 250A 3TOWER
Description: DIODE MODULE 1.6KV 250A 3TOWER
товар відсутній
MSRT25060(A) |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 600V 250A 3TOWER
Description: DIODE MODULE 600V 250A 3TOWER
товар відсутній
MSRT25080(A) |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 800V 250A 3TOWER
Description: DIODE MODULE 800V 250A 3TOWER
товар відсутній
MSRTA300100(A)D |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1KV 300A 3TOWER
Description: DIODE MODULE 1KV 300A 3TOWER
товар відсутній