Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5702) > Сторінка 13 з 96
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||
---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
MBR60020CTR | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товар відсутній |
|||||||
![]() |
MBR60030CT | GeneSiC Semiconductor |
![]() |
товар відсутній |
|||||||
![]() |
MBR60030CTR | GeneSiC Semiconductor |
![]() |
товар відсутній |
|||||||
![]() |
MBR60035CT | GeneSiC Semiconductor |
![]() |
товар відсутній |
|||||||
![]() |
MBR60035CTR | GeneSiC Semiconductor |
![]() |
товар відсутній |
|||||||
![]() |
MBR60045CT | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товар відсутній |
|||||||
![]() |
MBR60045CTR | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товар відсутній |
|||||||
![]() |
MBR60060CT | GeneSiC Semiconductor |
![]() |
товар відсутній |
|||||||
![]() |
MBR60060CTR | GeneSiC Semiconductor |
![]() |
товар відсутній |
|||||||
![]() |
MBR60080CT | GeneSiC Semiconductor |
![]() |
товар відсутній |
|||||||
![]() |
MBR60080CTR | GeneSiC Semiconductor |
![]() |
товар відсутній |
|||||||
MBR60100 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
||||||||
MBR60100R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
||||||||
MBR6020 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
||||||||
MBR6020R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
||||||||
MBR6030 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
||||||||
MBR6030R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
||||||||
MBR6035R | GeneSiC Semiconductor |
![]() |
товар відсутній |
||||||||
MBR6040 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
||||||||
MBR6040R | GeneSiC Semiconductor |
![]() |
товар відсутній |
||||||||
MBR6045R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
||||||||
MBR6060 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
||||||||
MBR6060R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
||||||||
MBR6080 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
||||||||
MBR6080R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
||||||||
MBR75100 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 75A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 75 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
||||||||
MBR75100R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 75A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 75 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
||||||||
MBR7520 | GeneSiC Semiconductor |
![]() |
товар відсутній |
||||||||
MBR7520R | GeneSiC Semiconductor |
![]() |
товар відсутній |
||||||||
MBR7530 | GeneSiC Semiconductor |
![]() |
товар відсутній |
||||||||
MBR7530R | GeneSiC Semiconductor |
![]() |
товар відсутній |
||||||||
MBR7535R | GeneSiC Semiconductor |
![]() |
товар відсутній |
||||||||
MBR7540 | GeneSiC Semiconductor |
![]() |
товар відсутній |
||||||||
MBR7540R | GeneSiC Semiconductor |
![]() |
товар відсутній |
||||||||
MBR7545R | GeneSiC Semiconductor |
![]() |
товар відсутній |
||||||||
MBR7560 | GeneSiC Semiconductor |
![]() |
товар відсутній |
||||||||
MBR7560R | GeneSiC Semiconductor |
![]() |
товар відсутній |
||||||||
MBR7580 | GeneSiC Semiconductor |
![]() |
товар відсутній |
||||||||
MBR7580R | GeneSiC Semiconductor |
![]() |
товар відсутній |
||||||||
MBR80100 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
товар відсутній |
||||||||
MBR80100R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
||||||||
MBR8020 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товар відсутній |
||||||||
MBR8020R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товар відсутній |
||||||||
MBR8030 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
товар відсутній |
||||||||
MBR8030R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
товар відсутній |
||||||||
MBR8035 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 35 V |
товар відсутній |
||||||||
MBR8035R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 35 V |
товар відсутній |
||||||||
MBR8040 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 35 V |
товар відсутній |
||||||||
MBR8040R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 35 V |
товар відсутній |
||||||||
|
MBR8045R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
|
||||||
MBR8060 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
||||||||
MBR8060R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 160°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
товар відсутній |
||||||||
MBR8080 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 80 V |
товар відсутній |
||||||||
MBR8080R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 80 V |
товар відсутній |
||||||||
![]() |
MBRF40035 | GeneSiC Semiconductor | Description: DIODE MODULE 35V 400A TO244AB |
товар відсутній |
|||||||
![]() |
MBRF40035R | GeneSiC Semiconductor | Description: DIODE MODULE 35V 400A TO244AB |
товар відсутній |
|||||||
![]() |
MBRH120100 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 20 V |
товар відсутній |
|||||||
![]() |
MBRH120100R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 20 V |
товар відсутній |
|||||||
![]() |
MBRH12020 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 20 V |
товар відсутній |
|||||||
![]() |
MBRH12020R | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 20 V |
товар відсутній |
MBR60020CTR |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
MBR60030CTR |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 30V 300A 2TOWER
Description: DIODE MODULE 30V 300A 2TOWER
товар відсутній
MBR60035CTR |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 35V 300A 2TOWER
Description: DIODE MODULE 35V 300A 2TOWER
товар відсутній
MBR60045CT |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MODULE 45V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
MBR60045CTR |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MODULE 45V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
MBR60060CTR |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 60V 300A 2TOWER
Description: DIODE MODULE 60V 300A 2TOWER
товар відсутній
MBR60080CTR |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 80V 300A 2TOWER
Description: DIODE MODULE 80V 300A 2TOWER
товар відсутній
MBR60100 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
MBR60100R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY REV 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
MBR6020 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY 20V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
MBR6020R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY REV 20V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
MBR6030 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY 30V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
MBR6030R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY REV 30V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
MBR6040 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY 40V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
MBR6045R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 45V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY REV 45V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
MBR6060 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY 60V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
MBR6060R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 60V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY REV 60V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
MBR6080 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY 80V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
MBR6080R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 80V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY REV 80V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
MBR75100 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 75 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY 100V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 75 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
MBR75100R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 100V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 75 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY REV 100V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 75 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
MBR80100 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE SCHOTTKY 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товар відсутній
MBR80100R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY REV 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
MBR8020 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE SCHOTTKY 20V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
MBR8020R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE SCHOTTKY REV 20V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
MBR8030 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
товар відсутній
MBR8030R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY REV 30V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
товар відсутній
MBR8035 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Description: DIODE SCHOTTKY 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
товар відсутній
MBR8035R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Description: DIODE SCHOTTKY REV 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
товар відсутній
MBR8040 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Description: DIODE SCHOTTKY 40V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
товар відсутній
MBR8040R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Description: DIODE SCHOTTKY REV 40V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
товар відсутній
MBR8045R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 45V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE SCHOTTKY REV 45V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1815.6 грн |
10+ | 1477.32 грн |
25+ | 1381.52 грн |
MBR8060 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY 60V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товар відсутній
MBR8060R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 60V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 160°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY REV 60V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 160°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
товар відсутній
MBR8080 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Description: DIODE SCHOTTKY 80V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
товар відсутній
MBR8080R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 80V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Description: DIODE SCHOTTKY REV 80V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
товар відсутній
MBRF40035R |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A TO244AB
Description: DIODE MODULE 35V 400A TO244AB
товар відсутній
MBRH120100 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
Description: DIODE SCHOTTKY 100V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товар відсутній
MBRH120100R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
Description: DIODE SCHOTTKY 100V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товар відсутній
MBRH12020 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
Description: DIODE SCHOTTKY 20V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товар відсутній
MBRH12020R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
Description: DIODE SCHOTTKY REV 20V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товар відсутній